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Vertical Field-Effect Transistor Based on Wavefunction Extension

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arxiv 1008.0668 v4 pith:IFAY5MUD submitted 2010-08-03 cond-mat.mes-hall

Adam Sciambi , Matthew Pelliccione , Michael P. Lilly , Seth R. Bank , Arthur C. Gossard , Loren N. Pfeiffer , Ken W. West , David Goldhaber-Gordon This is my paper · ORCID
classification cond-mat.mes-hall
keywords layercurrentfield-effectincreaseothertransistortunnelvertical
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We demonstrate a mechanism for a dual layer, vertical field-effect transistor, in which nearly-depleting one layer will extend its wavefunction to overlap the other layer and increase tunnel current. We characterize this effect in a specially designed GaAs/AlGaAs device, observing a tunnel current increase of two orders of magnitude at cryogenic temperatures, and we suggest extrapolations of the design to other material systems such as graphene.

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