Fully electrically read-write device out of a ferromagnetic semiconductor

C. Gould; K. Brunner; K. Pappert; L. Ebel; L.W. Molenkamp; P. D\"urrenfeld; S. Mark

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Fully electrically read-write device out of a ferromagnetic semiconductor

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arxiv 1012.4252 v1 pith:URKEGTMI submitted 2010-12-20 cond-mat.mes-hall

S. Mark , P. Dürrenfeld , K. Pappert , L. Ebel , K. Brunner , C. Gould , L.W. Molenkamp This is my paper · ORCID

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keywords deviceelectricallyferromagneticread-writesemiconductorstateachievedanisotropic

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We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching and read-out of the state is done by the means of the tunneling anisotropic magneto resistance (TAMR) effect. This one bit demonstrator device can be used to design a electrically programmable memory and logic device.

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