REVIEW
Temperature dependencies of the energy and time resolution of silicon drift detectors
Not yet reviewed by Pith; the record is open.
This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.
SPECIMEN: schema-true, not a live event
T0 review · schema-true
One-sentence machine reading of the paper's core claim.
pith:XXXXXXXX · record.json · timestamp
Temperature dependencies of the energy and time resolution of silicon drift detectors
read the original abstract
The response of silicon drift detectors (SDDs), which were mounted together with their preamplifiers inside a vacuum chamber, was studied in a temperature range from 100 K to 200 K. In particular, the energy resolution could be stabilized to about 150 eV at 6 keV between 130 K and 200 K, while the time resolution shows a temperature dependence of T^3 in this temperature range. To keep a variation of the X-ray peak positions within 1 eV, it is necessary to operate the preamplifier within a stability of 1 K around 280 K. A detailed investigation of this temperature influences on SDDs and preamplifiers is presented.
discussion (0)
Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.