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Silicon Layer Intercalation of Centimeter-Scale, Epitaxially-Grown Monolayer Graphene on Ru(0001)

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arxiv 1112.4228 v1 pith:3CMAR2GS submitted 2011-12-19 cond-mat.mtrl-sci

Jinhai Mao , Li Huang , Yi Pan , Min Gao , Junfeng He , Haitao Zhou , Haiming Guo , Yuan Tian
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Qiang Zou Lizhi Zhang Haigang Zhang Yeliang Wang Shixuan Du Xingjiang Zhou A. H. Castro Neto Hong-Jun Gao
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classification cond-mat.mtrl-sci
keywords grapheneintercalationmetalpropertiessilicon-layerspectroscopysubstrateallows
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We develop a strategy for graphene growth on Ru(0001) followed by silicon-layer intercalation that not only weakens the interaction of graphene with the metal substrate but also retains its superlative properties. This G/Si/Ru architecture, produced by silicon-layer intercalation approach (SIA), was characterized by scanning tunneling microscopy/spectroscopy and angle resolved electron photoemission spectroscopy. These experiments show high structural and electronic qualities of this new composite. The SIA allows for an atomic control of the distance between the graphene and the metal substrate that can be used as a top gate. Our results show potential for the next generation of graphene-based materials with tailored properties.

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