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Development of CMOS Pixel Sensors fully adapted to the ILD Vertex Detector Requirements

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arxiv 1203.3750 v1 pith:VTX33ADP submitted 2012-03-16 physics.ins-det hep-ex

Development of CMOS Pixel Sensors fully adapted to the ILD Vertex Detector Requirements

classification physics.ins-det hep-ex
keywords cmossensorsdetectordevelopmentpixelrequirementsvertexachievement
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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CMOS Pixel Sensors are making steady progress towards the specifications of the ILD vertex detector. Recent developments are summarised, which show that these devices are close to comply with all major requirements, in particular the read-out speed needed to cope with the beam related background. This achievement is grounded on the double- sided ladder concept, which allows combining signals generated by a single particle in two different sensors, one devoted to spatial resolution and the other to time stamp, both assembled on the same mechanical support. The status of the development is overviewed as well as the plans to finalise it using an advanced CMOS process.

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