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Spin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields

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arxiv 1208.2313 v1 pith:KEE2SRH6 submitted 2012-08-11 cond-mat.mtrl-sci

classification cond-mat.mtrl-sci
keywords recombinationresonancemagneticspinbeenbismuthdependentdifferent
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Low-field (6-110 mT) magnetic resonance of bismuth (Bi) donors in silicon has been observed by monitoring the change in photoconductivity induced by spin dependent recombination. The spectra at various resonance frequencies show signal intensity distributions drastically different from that observed in conventional electron paramagnetic resonance, attributed to different recombination rates for the forty possible combinations of spin states of a pair of a Bi donor and a paramagnetic recombination center. An excellent tunability of Bi excitation energy for the future coupling with superconducting flux qubits at low fields has been demonstrated.

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