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Gapped Symmetry Preserving Surface-State for the Electron Topological Insulator

Strongly Correlated Electrons · Submitted 13 Jun 2013

abstract compiled · 2026-09-23 · no language-model review

The authors' main claim Here we show that it is possible for the TI surface to be both gapped and symmetry-preserving, at the expense of having surface-topological order.

how it is stated · asserted 0.73 read the record →

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arXiv ID1306.3223 (version 3)
Pith IDQ7N5EF3D, Pith's permanent record of this paper and its review
CitationAndrew C. Potter, Chong Wang, T. Senthil. "Gapped Symmetry Preserving Surface-State for the Electron Topological Insulator." arXiv:1306.3223 (2013). https://pith.science/paper/Q7N5EF3D
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The compiled record

The paper's own sentences, arranged. Each label is drawn from a closed vocabulary; the number beside it is the probability the classifier gave that label. Numbers in the tables are the authors', checked by code. No sentence in this record was written by a model.

Open the compiled record

Compiled by classifier-1.13-20260917 via OpenRouter, question bank abstract-p1-20260923, 2026-09-23: 1 request, 4,351 input tokens, $0.0002 reported.

What the abstract itself states, as probabilities: claims first 0.09 · states limitation 0.34 · human participants 0.02 · controlled comparison 0.08 · randomized assignment 0.01 · states quantitative result 0.03 · compares with prior results 0.88 · mentions code or data availability 0.01.

The abstract, sentence by sentence

arXiv listing abstract v3. Results and the main claim are underlined; .

It is well known that the 3D electronic topological insulator (TI) with charge-conservation and time-reversal symmetry cannot have a trivial insulating surface that preserves symmetry. It is often implicitly assumed that if the TI surface preserves both symmetries then it must be gapless. Here we show that it is possible for the TI surface to be both gapped and symmetry-preserving, at the expense of having surface-topological order. In contrast to analogous bosonic topological insulators, this symmetric surface topological order is intrinsically non-Abelian. We show that the surface-topological order provides a complete non-perturbative definition of the electron TI that transcends a free-particle band-structure picture, and could provide a useful perspective for studying strongly correlated topological Mott insulators.

background contribution method result interpretation main claim

What the classifier reports for each sentence. The number is the probability it gave the label.
#sentencerolethe authors' own workstates the main conclusionstrength
s0 It is well known that the 3D electronic topological insulator (TI) with charge-conservation and time-reversal symmetry cannot have a trivial insulating surface that preserves symmetry. background 1.00 0.03 0.03 asserted 1.00
s1 It is often implicitly assumed that if the TI surface preserves both symmetries then it must be gapless. background 0.92 0.03 0.03 asserted 0.62
s2 Here we show that it is possible for the TI surface to be both gapped and symmetry-preserving, at the expense of having surface-topological order. result 0.80 0.94 0.91 asserted 0.73
s3 In contrast to analogous bosonic topological insulators, this symmetric surface topological order is intrinsically non-Abelian. result 0.97 0.76 0.09 asserted 1.00
s4 We show that the surface-topological order provides a complete non-perturbative definition of the electron TI that transcends a free-particle band-structure picture, and could provide a useful perspective for studying strongly correlated topological Mott insulators. interpretation 0.96 0.90 0.21 asserted 0.65

What kind of paper the classifier reports this is: theoretical result 1.00 · evidence from proof or derivation 0.72.

What was examined, and what was not

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  • arXiv listing abstract v3
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  • full text
  • figures and tables
  • references and citing sentences
  • relations to other papers
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  • P abstract
not run
  • S sections
  • T body sentences
  • C citations
  • R cross-paper relations

Every quoted sentence on this record is the authors'. Every label is from Pith's closed vocabulary, with the probability shown beside it. Every number in the measurements table is the authors', checked by code. Record as JSON

The paper
Original abstract

It is well known that the 3D electronic topological insulator (TI) with charge-conservation and time-reversal symmetry cannot have a trivial insulating surface that preserves symmetry. It is often implicitly assumed that if the TI surface preserves both symmetries then it must be gapless. Here we show that it is possible for the TI surface to be both gapped and symmetry-preserving, at the expense of having surface-topological order. In contrast to analogous bosonic topological insulators, this symmetric surface topological order is intrinsically non-Abelian. We show that the surface-topological order provides a complete non-perturbative definition of the electron TI that transcends a free-particle band-structure picture, and could provide a useful perspective for studying strongly correlated topological Mott insulators.

Human review
References
How the literature uses it

24 arXiv papers cite this in 30 sentences

Each citing sentence is taken from the citing paper's LaTeX source and typed by Pith's classifier. A label appears at probability 0.8 or more (0.95 for support), a contest at 0.7 or more; the quoted words are the citing authors'. How each label was checked · JSON

Papers whose main result relates to this one's

Found among the papers closest to this one by title and main claim. Pith's classifier compared each pair's main results and a second model family confirmed the relation; checked against two further families, shown conflicts agreed 118 times in 120 and shown same results 218 times in 239. The quoted sentence is the other paper's main claim.

States the same result 1 paper

Papers citing it · 25 sentences without a confident label

Compares with it 1 paper
Cites it as background 4 papers

What it cites · 8 sentences without a confident label

Compares with 3 papers
Cites as background 1 paper

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