Pith. sign in

REVIEW

Carbon Irradiated SI-GaAs for Photoconductive THz Detection

Not yet reviewed by Pith; the record is open.

Re-run · record.json Download PDF Read on arXiv ↗

This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.

SPECIMEN: schema-true, not a live event

T0 review · schema-true

One-sentence machine reading of the paper's core claim.

pith:XXXXXXXX · record.json · timestamp

arxiv 1409.5940 v1 pith:IPEFZ6S6 submitted 2014-09-21 cond-mat.mtrl-sci physics.optics

Abhishek Singh , Sanjoy Pal , Harshad Surdi , S. S. Prabhu , Mathimalar S. , Vandana Nanal , R. G. Pillay , G.H. Dohler This is my paper
classification cond-mat.mtrl-sciphysics.optics
keywords si-gaascarboncarrierdetectionirradiationlifetimephotoconductivesub-picosecond
verification ladder T0 review T1 audit T2 compute T3 formal
0 comments
read the original abstract

We report here a photoconductive material for THz generation and detection with sub-picosecond carrier lifetime made by C12 (Carbon) irradiation on commercially available semi-insulating (SI) GaAs. We are able to reduce the carrier lifetime of SI-GaAs down to sub-picosecond by irradiating it with various irradiation dosages of Carbon (C12) ions. With an increase of the irradiation dose from ~1012 /cm2 to ~1015 /cm2 the carrier lifetime of SI-GaAs monotonously decreases to 0.55 picosecond, resulting in strongly improved THz pulse detection compared with normal SI-GaAs.

Discussion (0). Sign in to comment.

Pith tools