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Optical properties of two-dimensional gallium chalcogenide films

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arxiv 1501.02214 v2 pith:AB4NSHYT submitted 2015-01-09 cond-mat.mes-hall

O. Del Pozo-Zamudio , S. Schwarz , M. Sich , I. A. Akimov , M. Bayer , R. C. Schofield , E. A. Chekhovich , B. J. Robinson
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N. D. Kay O. V. Kolosov A. I. Dmitriev G. V. Lashkarev D. N. Borisenko N. N. Kolesnikov A. I. Tartakovskii
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classification cond-mat.mes-hall
keywords decreasefilmsgalliumthicknessblocksbuildingcarriercell
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abstract

Gallium chalcogenides are promising building blocks for novel van der Waals heterostructures. We report low-temperature micro-photoluminescence (PL) of GaTe and GaSe films with thickness ranging from from 200 nm to a single unit cell. In both materials, PL shows dramatic decrease by 10$^4$-10$^5$ when film thickness is reduced from 200 to 10 nm. Based on evidence from cw and time-resolved PL, we propose a model explaining the PL decrease as a result of non-radiative carrier escape via surface states.

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