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Vanadium Dioxide: Metal-Insulator Transition, Electrical Switching and Oscillations. A Review of State of the Art and Recent Progress
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Vanadium dioxide is currently considered as one of the most promising metarials for oxide elcteronics. Both planar and sandwich thin-film MOM devices based on VO2 exhibit electrical switching with an S-shaped I-V characteristic, and this switching effect is associated with the metal-insulator transition (MIT). In an electrical circuit containing such a switching device, relaxation oscillations are observed if the load line intersects the I-V curve at a unique point in NDR region. All these effects are potentially prospective for designing various devices of oxide electronics, particularly, elements of dynamical neural networks based on coupled oscillators.
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Phase noise analysis and control of VO$_2$-based relaxation type oscillators
Linewidth broadening in VO2 relaxation oscillators at low frequency comes from thermal jitter in the shallow incubation approach to the IMT, and square-wave 2f injection suppresses it more effectively than sinusoidal locking.
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