Highly efficient spin-to-charge current conversion at room temperature in strained HgTe surface states

B. Haas; C. Thomas; J.P. Attan\'e; L. Vila; P. Ballet; P.H. Jouneau; P. No\"el; S. Gambarelli; T. Meunier; Y. Fu

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Highly efficient spin-to-charge current conversion at room temperature in strained HgTe surface states

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arxiv 1708.05470 v1 pith:VMY6K4UP submitted 2017-08-18 cond-mat.mes-hall

P. Noël , C. Thomas , Y. Fu , L. Vila , B. Haas , P.H. Jouneau , S. Gambarelli , T. Meunier

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P. Ballet J.P. Attané

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We report the observation of spin-to-charge current conversion in strained mercury telluride at room temperature, using spin pumping experiments. The conversion rates are found to be very high, with inverse Edelstein lengths up to 2.0 +/- 0.5 nm. The influence of the HgTe layer thickness on the conversion efficiency has been studied, as well as the role of a HgCdTe barrier inserted in-between the HgTe and NiFe layers. These measurements, associated to the temperature dependence of the resistivity, allows to ascribe these high conversion rates to the spin momentum locking property of HgTe surface states.

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