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Carrier loss mechanisms in textured crystalline Si-based solar cells
Applied Physics · Submitted 21 Jul 2017
abstract compiled · 2026-09-23 · no language-model review
The authors' main claim By applying this technique, the optical and physical limiting factors of the state-of-the-art solar cells with ~20% efficiencies have been revealed.
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The abstract, sentence by sentence
A quite general device analysis method that allows the direct evaluation of optical and recombination losses in crystalline silicon (c-Si)-based solar cells has been developed. By applying this technique, the optical and physical limiting factors of the state-of-the-art solar cells with ~20% efficiencies have been revealed. In the established method, the carrier loss mechanisms are characterized from the external quantum efficiency (EQE) analysis with very low computational cost. In particular, the EQE analyses of textured c-Si solar cells are implemented by employing the experimental reflectance spectra obtained directly from the actual devices while using flat optical models without any fitting parameters. We find that the developed method provides almost perfect fitting to EQE spectra reported for various textured c-Si solar cells, including c-Si heterojunction solar cells, a dopant-free c-Si solar cell with a MoOx layer, and an n-type passivated emitter with rear locally diffused (PERL) solar cell. The modeling of the recombination loss further allows the extraction of the minority carrier diffusion length and surface recombination velocity from the EQE analysis. Based on the EQE analysis results, the carrier loss mechanisms in different types of c-Si solar cells are discussed.
background contribution method result interpretation main claim
| # | sentence | role | the authors' own work | states the main conclusion | strength |
|---|---|---|---|---|---|
| s0 | A quite general device analysis method that allows the direct evaluation of optical and recombination losses in crystalline silicon (c-Si)-based solar cells has been developed. | contribution 0.98 | 0.92 | 0.18 | asserted 1.00 |
| s1 | By applying this technique, the optical and physical limiting factors of the state-of-the-art solar cells with ~20% efficiencies have been revealed. | result 0.91 | 0.88 | 0.31 | asserted 1.00 |
| s2 | In the established method, the carrier loss mechanisms are characterized from the external quantum efficiency (EQE) analysis with very low computational cost. | method 0.97 | 0.73 | 0.12 | asserted 1.00 |
| s3 | In particular, the EQE analyses of textured c-Si solar cells are implemented by employing the experimental reflectance spectra obtained directly from the actual devices while using flat optical models without any fitting parameters. | method 1.00 | 0.86 | 0.08 | asserted 1.00 |
| s4 | We find that the developed method provides almost perfect fitting to EQE spectra reported for various textured c-Si solar cells, including c-Si heterojunction solar cells, a dopant-free c-Si solar cell with a MoOx layer, and an n-type passivated emitter with rear locally diffused (PERL) solar cell. | result 1.00 | 0.94 | 0.30 | asserted 1.00 |
| s5 | The modeling of the recombination loss further allows the extraction of the minority carrier diffusion length and surface recombination velocity from the EQE analysis. | method 0.52 | 0.78 | 0.13 | asserted 0.96 |
| s6 | Based on the EQE analysis results, the carrier loss mechanisms in different types of c-Si solar cells are discussed. | interpretation 0.83 | 0.76 | 0.17 | asserted 0.75 |
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Original abstract
A quite general device analysis method that allows the direct evaluation of optical and recombination losses in crystalline silicon (c-Si)-based solar cells has been developed. By applying this technique, the optical and physical limiting factors of the state-of-the-art solar cells with ~20% efficiencies have been revealed. In the established method, the carrier loss mechanisms are characterized from the external quantum efficiency (EQE) analysis with very low computational cost. In particular, the EQE analyses of textured c-Si solar cells are implemented by employing the experimental reflectance spectra obtained directly from the actual devices while using flat optical models without any fitting parameters. We find that the developed method provides almost perfect fitting to EQE spectra reported for various textured c-Si solar cells, including c-Si heterojunction solar cells, a dopant-free c-Si solar cell with a MoOx layer, and an n-type passivated emitter with rear locally diffused (PERL) solar cell. The modeling of the recombination loss further allows the extraction of the minority carrier diffusion length and surface recombination velocity from the EQE analysis. Based on the EQE analysis results, the carrier loss mechanisms in different types of c-Si solar cells are discussed.
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