Electronic Transport Properties of Carrier Controlled SnSe Single Crystals

Aichi Yamashita; Chul-Ho Lee; Hiromi Tanaka; Hiroshi Hara; Hiroyuki Takeya; Masashi Tanaka; Osamu Ogiso; Ryo Matsumoto; Yoshihiko Takano

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Electronic Transport Properties of Carrier Controlled SnSe Single Crystals

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arxiv 1710.01863 v1 pith:L5N567CL submitted 2017-10-05 cond-mat.mtrl-sci

Aichi Yamashita , Osamu Ogiso , Ryo Matsumoto , Masashi Tanaka , Hiroshi Hara , Hiromi Tanaka , Hiroyuki Takeya , Chul-Ho Lee

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Yoshihiko Takano

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classification cond-mat.mtrl-sci

keywords snsecrystalssingleelectronicgrainmetallicoxygentransport

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We found that the electronic transport property of SnSe single crystals was sensitive to oxygen content. Semiconducting SnSe single crystals were obtained by using Sn of grain form as a starting material while powder Sn resulted in metallic SnSe. X-ray photoelectron spectroscopy analysis revealed that the surfaces of raw Sn were oxidized, where the volume fraction was relatively low in grain Sn. This demonstrates that contamination of oxygen causes metallic behavior in grown SnSe single crystals.

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