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Electric field Control of Exchange Bias by Resistive Switching

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arxiv 1710.01865 v1 pith:C7UN3MS5 submitted 2017-10-05 cond-mat.mtrl-sci

L. J. Wei , Z. Z. Hu , Y. J. Wang , G. X. Du , Y. Yuan , J. Wang , H. Q. Tu , B. You
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S. M. Zhou Y. Hu J. Du
This is my paper · ORCID
classification cond-mat.mtrl-sci
keywords resistiveswitchingbiasdeviceelectricexchangefieldaccess
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We demonstrated an electric field controlled exchange bias (EB) effect accompanied with unipolar resistive switching behavior in the Si/SiO2/Pt/Co/NiO/Pt device. By applying certain voltages, the device displays obvious EB in high-resistance-state while negligible EB in low-resistance-state. Conductive filaments forming and rupture in the NiO layer but near the Co-NiO interface are considered to play dominant roles in determining the combined resistive switching and EB phenomena. This work paves a new way for designing multifunctional and nonvolatile magnetic-electrical random access memory devices.

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