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Low current Hall Effect Sensor

Instrumentation and Detectors · Submitted 8 Feb 2018

abstract compiled · 2026-09-23 · no language-model review

The authors' main claim This paper demonstrates, for the first time, the ability of a standard Hall detector to work in the {\mu}A regime between 0 and 0.7 Tesla.

how it is stated · asserted 1.00 read the record →

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arXiv ID1802.02758 (version 1)
Pith IDH2HWECXY, Pith's permanent record of this paper and its review
CitationBagrat Khachatryan, Dima Cheskis, Yossi Sharon. "Low current Hall Effect Sensor." arXiv:1802.02758 (2018). https://pith.science/paper/H2HWECXY
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The paper's own sentences, arranged. Each label is drawn from a closed vocabulary; the number beside it is the probability the classifier gave that label. Numbers in the tables are the authors', checked by code. No sentence in this record was written by a model.

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Compiled by classifier-1.13.0 via TypeSafe API, question bank abstract-p1-20260923, 2026-09-23: 1 request, 6,245 input tokens.

What the abstract itself states, as probabilities: claims first 0.95 · states limitation 0.14 · human participants 0.02 · controlled comparison 0.03 · randomized assignment 0.01 · states quantitative result 0.93 · compares with prior results 0.15 · mentions code or data availability 0.02.

The abstract, sentence by sentence

arXiv listing abstract v1. Results and the main claim are underlined; .

Many modern electronic devices utilize linear Hall sensors to measure current and the magnetic field, as well as to perform switching and latching operations. Smartphones, laptops, and e-readers all work with very low (sub-mA) currents. To perform a switching function in such low-power devices, however, a Hall sensor must be able to work in the {\mu}A regime. This paper demonstrates, for the first time, the ability of a standard Hall detector to work in the {\mu}A regime between 0 and 0.7 Tesla. A second important application of this technology is the measurement of electron transport parameters in thin films, which is essential to elucidating their electronic behavior. The development of new devices using thin films demands very precise measurements of tiny electrical currents, low-intensity magnetic fields, and other small signals. The proposed system delivers a very small but stable electric current without external noise, and can be used to measure small transport parameters with very high precision. We demonstrate the capabilities of this system by measuring the slope of the Hall effect with a four-point probe at current intensities of 100, 10, and 1 {\mu}A.

background contribution method result interpretation main claim

What the classifier reports for each sentence. The number is the probability it gave the label.
#sentencerolethe authors' own workstates the main conclusionstrength
s0 Many modern electronic devices utilize linear Hall sensors to measure current and the magnetic field, as well as to perform switching and latching operations. background 1.00 0.04 0.03 asserted 1.00
s1 Smartphones, laptops, and e-readers all work with very low (sub-mA) currents. background 1.00 0.05 0.02 asserted 1.00
s2 To perform a switching function in such low-power devices, however, a Hall sensor must be able to work in the {\mu}A regime. background 0.64 0.05 0.05 asserted 0.98
s3 This paper demonstrates, for the first time, the ability of a standard Hall detector to work in the {\mu}A regime between 0 and 0.7 Tesla. contribution 0.89 0.95 0.83 asserted 1.00
s4 A second important application of this technology is the measurement of electron transport parameters in thin films, which is essential to elucidating their electronic behavior. background 0.76 0.13 0.05 asserted 0.99
s5 The development of new devices using thin films demands very precise measurements of tiny electrical currents, low-intensity magnetic fields, and other small signals. background 0.98 0.06 0.04 asserted 1.00
s6 The proposed system delivers a very small but stable electric current without external noise, and can be used to measure small transport parameters with very high precision. contribution 0.75 0.65 0.21 asserted 0.97
s7 We demonstrate the capabilities of this system by measuring the slope of the Hall effect with a four-point probe at current intensities of 100, 10, and 1 {\mu}A. method 0.73 0.96 0.13 asserted 1.00

What kind of paper the classifier reports this is: method or tool 0.80 · evidence from observation or experiment 1.00.

What was examined, and what was not

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Every quoted sentence on this record is the authors'. Every label is from Pith's closed vocabulary, with the probability shown beside it. Every number in the measurements table is the authors', checked by code. Record as JSON

The paper
Original abstract

Many modern electronic devices utilize linear Hall sensors to measure current and the magnetic field, as well as to perform switching and latching operations. Smartphones, laptops, and e-readers all work with very low (sub-mA) currents. To perform a switching function in such low-power devices, however, a Hall sensor must be able to work in the {\mu}A regime. This paper demonstrates, for the first time, the ability of a standard Hall detector to work in the {\mu}A regime between 0 and 0.7 Tesla. A second important application of this technology is the measurement of electron transport parameters in thin films, which is essential to elucidating their electronic behavior. The development of new devices using thin films demands very precise measurements of tiny electrical currents, low-intensity magnetic fields, and other small signals. The proposed system delivers a very small but stable electric current without external noise, and can be used to measure small transport parameters with very high precision. We demonstrate the capabilities of this system by measuring the slope of the Hall effect with a four-point probe at current intensities of 100, 10, and 1 {\mu}A.

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