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2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p$^+$-WSe$_2$ Source
Applied Physics · Submitted 18 Jul 2018
abstract compiled · 2026-09-23 · no language-model review
The authors' main claim This work suggests that high doped 2D crystal of the charge transfer type is an excellent choice as sources for TFETs.
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The abstract, sentence by sentence
Two-dimensional (2D) materials are highly promising for tunnel field effect transistors (TFETs) with low subthreshold swing and high drive current because the shorter tunnel distance and strong gate controllability can be expected from the van der Waals gap distance and the atomically sharp heterointerface formed independently of lattice matching. However, the common problem for 2D-2D TFETs is the lack of highly doped 2D materials with the high process stability as the sources. In this study, we have found that p+-WSe2 doped by charge transfer from a WOx surface oxide layer can be stabilized by transferring it onto a h-BN substrate. Using this p$^+$-WSe$_2$ as a source, we fabricate all-solid-state 2D-2D heterostructure TFETs with an Al2O3 top gate insulator, i.e., type-II p$^+$-WSe$_2$ /MoS$_2$ and type-III p$^+$-WSe$_2$ /WSe$_2$. The band-to-band tunneling and negative differential resistance trends are clearly demonstrated at low temperatures. This work suggests that high doped 2D crystal of the charge transfer type is an excellent choice as sources for TFETs.
background contribution method result interpretation main claim
| # | sentence | role | the authors' own work | states the main conclusion | strength |
|---|---|---|---|---|---|
| s0 | Two-dimensional (2D) materials are highly promising for tunnel field effect transistors (TFETs) with low subthreshold swing and high drive current because the shorter tunnel distance and strong gate controllability can be expected from the van der Waals gap distance and the atomically sharp heterointerface formed independently of lattice matching. | background 1.00 | 0.06 | 0.04 | hedged possibility 0.70 |
| s1 | However, the common problem for 2D-2D TFETs is the lack of highly doped 2D materials with the high process stability as the sources. | gap 0.54 | 0.06 | 0.03 | asserted 1.00 |
| s2 | In this study, we have found that p+-WSe2 doped by charge transfer from a WOx surface oxide layer can be stabilized by transferring it onto a h-BN substrate. | result 0.50 | 0.95 | 0.19 | asserted 1.00 |
| s3 | Using this p$^+$-WSe$_2$ as a source, we fabricate all-solid-state 2D-2D heterostructure TFETs with an Al2O3 top gate insulator, i.e., type-II p$^+$-WSe$_2$ /MoS$_2$ and type-III p$^+$-WSe$_2$ /WSe$_2$. | method 0.64 | 0.96 | 0.07 | asserted 1.00 |
| s4 | The band-to-band tunneling and negative differential resistance trends are clearly demonstrated at low temperatures. | result 1.00 | 0.90 | 0.06 | asserted 1.00 |
| s5 | This work suggests that high doped 2D crystal of the charge transfer type is an excellent choice as sources for TFETs. | interpretation 0.98 | 0.51 | 0.91 | hedged possibility 0.99 |
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Original abstract
Two-dimensional (2D) materials are highly promising for tunnel field effect transistors (TFETs) with low subthreshold swing and high drive current because the shorter tunnel distance and strong gate controllability can be expected from the van der Waals gap distance and the atomically sharp heterointerface formed independently of lattice matching. However, the common problem for 2D-2D TFETs is the lack of highly doped 2D materials with the high process stability as the sources. In this study, we have found that p+-WSe2 doped by charge transfer from a WOx surface oxide layer can be stabilized by transferring it onto a h-BN substrate. Using this p$^+$-WSe$_2$ as a source, we fabricate all-solid-state 2D-2D heterostructure TFETs with an Al2O3 top gate insulator, i.e., type-II p$^+$-WSe$_2$ /MoS$_2$ and type-III p$^+$-WSe$_2$ /WSe$_2$. The band-to-band tunneling and negative differential resistance trends are clearly demonstrated at low temperatures. This work suggests that high doped 2D crystal of the charge transfer type is an excellent choice as sources for TFETs.
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