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Pressure-induced Superconductivity in Sulfur-doped SnSe Single Crystal Using Boron-doped Diamond Electrode-prefabricated Diamond Anvil Cell

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arxiv 1807.08843 v1 pith:YUAUUCCQ submitted 2018-07-23 cond-mat.supr-con

Ryo Matsumoto , Hiroshi Hara , Hiromi Tanaka , Kazuki Nakamura , Noriyuki Kataoka , Sayaka Yamamoto , Aichi Yamashita , Shintaro Adachi
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Tetsuo Irifune Hiroyuki Takeya Yoshihiko Takano
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classification cond-mat.supr-con
keywords diamondanvilcrystalpressuresinglesnsesulfur-dopedboron-doped
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Sulfur-doped SnSe single crystal was successfully synthesized using a melt and slow-cooling method. The chemical composition and valence state of the obtained sample were analyzed by X-ray photoelectron spectroscopy. The pressure range of a diamond anvil cell with boron-doped diamond electrodes was upgraded to 104 GPa using nano-polycrystalline diamond anvil to investigate a pressure effect for the sample. Electrical resistivity measurements of sulfur-doped SnSe single crystal showed the insulator-metal-superconductor transition by applying high pressure up to 75.9 GPa.

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