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Prediction of Extraordinary Magnetoresistance in Janus Monolayer MoTeB2

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arxiv 1808.03378 v1 pith:ABNHCXTS submitted 2018-08-10 cond-mat.mtrl-sci

classification cond-mat.mtrl-sci
keywords moteb2monolayerchargedopingelectronicextraordinaryjanusmagnetoresistance
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Based on first-principles calculations, we studied the geometric configuration, stability and electronic structure of the two-dimensional Janus MoTeB2. The MoTeB2 monolayer is semimetal, and its attractive electronic structure reveals the perfect electron-hole compensation. Moreover, the electron-type and hole-type bands of the MoTeB2 monolayer are easily adjustable by external stain and charge doping, such as the switch of carrier polarity by charge doping, and the metal-semiconductor transition under tensile stain. These properties allow the MoTeB2 monolayer to be a controllable two-dimensional material with extraordinary large magnetoresistance in magnetic field.

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