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Temperature coefficient of Silicon based carrier selective solar cells

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Nithin Chatterji, Aldrin Antony, Pradeep R. Nair

Applied Physics · Submitted 31 Aug 2018

abstract compiled · 2026-09-23 · no language-model review

The authors' main claim Interestingly, contrary to the trends related to efficiency, our results indicate that the temperature coefficient of CS solar cells is more critically affected by the interface quality of the minority carrier extraction layer than the majority carrier extraction layer.

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arXiv ID1808.10656 (version 1)
Pith IDR63HIMB4, Pith's permanent record of this paper and its review
CitationAldrin Antony, Nithin Chatterji, Pradeep R. Nair. "Temperature coefficient of Silicon based carrier selective solar cells." arXiv:1808.10656 (2018). https://pith.science/paper/R63HIMB4
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The compiled record

The paper's own sentences, arranged. Each label is drawn from a closed vocabulary; the number beside it is the probability the classifier gave that label. Numbers in the tables are the authors', checked by code. No sentence in this record was written by a model.

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Compiled by classifier-1.13.0 via TypeSafe API, question bank abstract-p1-20260923, 2026-09-23: 1 request, 4,884 input tokens.

What the abstract itself states, as probabilities: claims first 0.06 · states limitation 0.24 · human participants 0.01 · controlled comparison 0.11 · randomized assignment 0.01 · states quantitative result 0.05 · compares with prior results 0.47 · mentions code or data availability 0.02.

The abstract, sentence by sentence

arXiv listing abstract v1. Results and the main claim are underlined; .

Carrier Selective (CS) Silicon solar cells are increasingly explored as a low cost alternative to PN junction Silicon solar cells. While the recent trends on power conversion efficiency are encouraging, the temperature coefficient and hence the power output under elevated temperatures are not well explored for such solar cells. Here, we address this issue through detailed numerical simulations to explore the influence of interface and material parameters on the temperature coefficient. Our results indicate that irrespective of the interface quality, the temperature coefficient of CS solar cells improves with an increase in band discontinuities. Interestingly, contrary to the trends related to efficiency, our results indicate that the temperature coefficient of CS solar cells is more critically affected by the interface quality of the minority carrier extraction layer than the majority carrier extraction layer. These insights have important implications towards the choice of optimal material and processing conditions for Si based CS solar cells.

background contribution method result interpretation main claim

What the classifier reports for each sentence. The number is the probability it gave the label.
#sentencerolethe authors' own workstates the main conclusionstrength
s0 Carrier Selective (CS) Silicon solar cells are increasingly explored as a low cost alternative to PN junction Silicon solar cells. background 1.00 0.04 0.02 asserted 0.97
s1 While the recent trends on power conversion efficiency are encouraging, the temperature coefficient and hence the power output under elevated temperatures are not well explored for such solar cells. gap 1.00 0.04 0.02 asserted 0.98
s2 Here, we address this issue through detailed numerical simulations to explore the influence of interface and material parameters on the temperature coefficient. contribution 0.58 0.87 0.03 asserted 0.72
s3 Our results indicate that irrespective of the interface quality, the temperature coefficient of CS solar cells improves with an increase in band discontinuities. result 1.00 0.94 0.31 hedged possibility 0.58
s4 Interestingly, contrary to the trends related to efficiency, our results indicate that the temperature coefficient of CS solar cells is more critically affected by the interface quality of the minority carrier extraction layer than the majority carrier extraction layer. result 1.00 0.96 0.43 asserted 0.68
s5 These insights have important implications towards the choice of optimal material and processing conditions for Si based CS solar cells. interpretation 1.00 0.30 0.08 asserted 0.83

What kind of paper the classifier reports this is: simulation study 1.00 · evidence from simulation or computation 1.00.

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  • references and citing sentences
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  • T body sentences
  • C citations
  • R cross-paper relations

Every quoted sentence on this record is the authors'. Every label is from Pith's closed vocabulary, with the probability shown beside it. Every number in the measurements table is the authors', checked by code. Record as JSON

The paper
Original abstract

Carrier Selective (CS) Silicon solar cells are increasingly explored as a low cost alternative to PN junction Silicon solar cells. While the recent trends on power conversion efficiency are encouraging, the temperature coefficient and hence the power output under elevated temperatures are not well explored for such solar cells. Here, we address this issue through detailed numerical simulations to explore the influence of interface and material parameters on the temperature coefficient. Our results indicate that irrespective of the interface quality, the temperature coefficient of CS solar cells improves with an increase in band discontinuities. Interestingly, contrary to the trends related to efficiency, our results indicate that the temperature coefficient of CS solar cells is more critically affected by the interface quality of the minority carrier extraction layer than the majority carrier extraction layer. These insights have important implications towards the choice of optimal material and processing conditions for Si based CS solar cells.

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