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Logical gates embedding in Artificial Spin Ice

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arxiv 1810.09190 v4 pith:7UQVJAEH submitted 2018-10-22 cond-mat.dis-nn cond-mat.stat-mechcs.ET

classification cond-mat.dis-nncond-mat.stat-mechcs.ET
keywords gatesintegrationinteractingmagneticartificialcollectivecontroldesign
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The realization and study of arrays of interacting magnetic nanoislands, such as artificial spin ices, have reached mature levels of control that allow design and demonstration of exotic, collective behaviors not seen in natural materials. Advances in the direct manipulation of their local, binary moments also suggest a use as nanopatterned, interacting memory media, for computation {\it within} a magnetic memory. Recent experimental work has demonstrated the possibility of building logic gates from clusters of interacting magnetic domains, and yet the possibility of large scale integration of such gates can prove problematic even at the theoretical level. Here we introduce theoretically complete sets of logical gates, in principle realizable in an experiment, and we study the feasibility of their integration into tree-like circuits. By evaluating the fidelity control parameter between their collective behavior and their expected logic functionality we determine conditions for integration. Also, we test our numerical results against the presence of disorder in the couplings, showing that the design gate structure is robust to small coupling perturbations, and thus possibly to small imperfections in the fabrication of the islands.

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Cited by 2 Pith papers

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score. Full citation record

  1. Heisenberg pseudo-exchange and emergent anisotropies in field-driven pinwheel artificial spin ice

    cond-mat.mes-hall 2019-08 conditional novelty 7.0 of 10

    In field-driven pinwheel artificial spin ice, island end-states produce a field-induced Heisenberg-like pseudo-exchange coupling that sets the reversal path and explains emergent anisotropies, with strength tunable by...

  2. Artificial Spin Ice Phase-Change Memory Resistors

    cond-mat.mes-hall 2019-08 conditional novelty 6.0 of 10

    A graph-theoretic derivation plus simulations show that anisotropic magnetoresistance in artificial spin ice yields a state-dependent conductance and pinched I-V hysteresis, making the wires behave as memristors.

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