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Paper Citation Record · LEDGER

Influence of chemical stability on the fabrication of MnGa-based devices

As of 16 August 2026, this Paper Citation Record lists 18 of 18 outbound references and 0 inbound Pith citation observations for arXiv:1908.06536.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
1908.06536 v1

Coverage vector

measured 18 of 18 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-08-14T12:43:32.506307Z

measured 18 of 18 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-16T06:30:59.297886+00:00

measured 0 of 0 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: cited_works

Reference resolution

18 of 18 outbound references displayed

  • verified exact0
  • verified fuzzy16
  • unresolved2
  • parse uncertain0
  • malformed identifier0
  • metadata mismatch0

External citation measurements

No source-named external measurement is stored.

Outbound references

Observation 27e8ed64-6678-411e-853a-79e1a1aa5a63 · outbound

This paper cites Perpendicularly magnetized MnxGa films: a kind of promising material for future spintronic devices, magnetic recording and permanent magnets.

Influence of chemical stability on the fabrication of MnGa-based devices Perpendicularly magnetized MnxGa films: a kind of promising material for future spintronic devices, magnetic recording and permanent magnets

Reference 1

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:43:33.082497Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:43:32.175803Z digest=sha256:2d9ea6b81f4cf813a1a28e969c4c2188859f0f3d0c25b4381a92ead9b493a5ab

Observation 5c598ca1-b8f9-4583-94ef-f678e852d83b · outbound

This paper cites Recent progress in perpendicularly magnetized Mn -based binary alloy films.

Influence of chemical stability on the fabrication of MnGa-based devices Recent progress in perpendicularly magnetized Mn -based binary alloy films

Reference 2

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:43:33.001671Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:43:32.181723Z digest=sha256:11f612374a7cf0913ade9f61f9c571e7ae8251bea7654aee28c4820aadf298c4

Observation 460deb1a-4f08-4e92-bf48-6d7abb63eefa · outbound

This paper cites Electrical Transport of perpendicularly magnetized L10-MnGa and MnAl films.

Influence of chemical stability on the fabrication of MnGa-based devices Electrical Transport of perpendicularly magnetized L10-MnGa and MnAl films

Reference 3

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:43:32.925444Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:43:32.200457Z digest=sha256:ae0e810386637031f398ca57c5a8f442e9242937eae5bba9dd2a399a8aaa374b

Observation 9c57d728-1bef-46e3-8fd5-85be186ff021 · outbound

This paper cites Multifunctional L10- Mn1.5Ga Films with ultrahigh coercivity, giant perpendicular magnetocrystalline anisotropy and large magnetic energy product.

Influence of chemical stability on the fabrication of MnGa-based devices Multifunctional L10- Mn1.5Ga Films with ultrahigh coercivity, giant perpendicular magnetocrystalline anisotropy and large magnetic energy product

Reference 4

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:43:32.909830Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:43:32.216860Z digest=sha256:87aaf08efbd96af541bb56d76ae62e4d62336dd84fee7a9a6cb694f2f39159f8

Observation c00c3aa0-6920-401b-b77a-f14028b6c10b · outbound

This paper cites Tailoring magnetism of multifunctional Mn xGa films with 3 giant perpendicular anisotr opy.

Influence of chemical stability on the fabrication of MnGa-based devices Tailoring magnetism of multifunctional Mn xGa films with 3 giant perpendicular anisotr opy

Reference 5

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:43:32.894284Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:43:32.249272Z digest=sha256:e7d56f0706e3c3c77ad57f2614d5636629884f7c45d304738193d74ca72bafaa

Observation 3348ad33-8633-4b6d-bfd5-4cfc87ddbe1c · outbound

This paper cites Long-Lived Ultrafast Spin Precession in Manganese Alloys Films with a Large Perpendicular Magnetic Anisotropy.

Influence of chemical stability on the fabrication of MnGa-based devices Long-Lived Ultrafast Spin Precession in Manganese Alloys Films with a Large Perpendicular Magnetic Anisotropy

Reference 6

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:43:32.879288Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:43:32.285239Z digest=sha256:2b89038b79758d1dd4a35dc0c10ea2dffc5fc83e84716591fcc2132d8eeb54b3

Observation 56cfcbde-eeb2-4881-9961-c8c545533436 · outbound

This paper cites Ferromagnetic δ-Mn1−xGax thin films with perpendicular anisotropy.

Influence of chemical stability on the fabrication of MnGa-based devices Ferromagnetic δ-Mn1−xGax thin films with perpendicular anisotropy

Reference 7

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:43:32.863344Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:43:32.306462Z digest=sha256:a0e0f636f550f2422425891c3c34f2dffb543b11b97e956cf5d580f4b7443f50

Observation 1c554663-8d9f-4272-a8a3-e949e089a73c · outbound

This paper cites Composition-tuned magneto -optical Kerr effect in L10- MnxGa films with giant perpendicular anisotropy.

Influence of chemical stability on the fabrication of MnGa-based devices Composition-tuned magneto -optical Kerr effect in L10- MnxGa films with giant perpendicular anisotropy

Reference 8

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:43:32.846271Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:43:32.326020Z digest=sha256:d6cbc99bb0dd3894276fdfa07044ae9ff1c10d583e51497c1dfeaf33ac733b79

Observation 63bc6dbe-5fcb-49dd-ac58-91c64c2bf7be · outbound

This paper cites Magnetoresistance effect in L10-MnGa/MgO/CoFeB perpendicular magnetic tunnel junctions with Co interlayer.

Influence of chemical stability on the fabrication of MnGa-based devices Magnetoresistance effect in L10-MnGa/MgO/CoFeB perpendicular magnetic tunnel junctions with Co interlayer

Reference 9

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:43:32.830416Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:43:32.363913Z digest=sha256:2803186874190f0fa1ff7215d094929c36efefadfab830b6d0945a7cd152e845

Observation a7717a51-dfce-4bdf-a243-486e4e053d48 · outbound

This paper cites an unresolved cited work.

Influence of chemical stability on the fabrication of MnGa-based devices Unresolved cited work

Reference 10

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unresolved
raw_fallback, observed 2026-08-14T12:43:32.815280Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:43:32.406998Z digest=sha256:e9f447d1bfd65ac0780c8a5c2a0a0c8fd122839aec3705300ec6cecf853022c3

Observation 081f0ca4-0826-494b-a213-8ada722b9a04 · outbound

This paper cites an unresolved cited work.

Influence of chemical stability on the fabrication of MnGa-based devices Unresolved cited work

Reference 11

Resolution
unresolved
raw_fallback, observed 2026-08-14T12:43:32.798869Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:43:32.427391Z digest=sha256:a61f733d7670e4f4c53c56ec41abdb539ad04cce69fa7b6a6160d6bfd2097a13

Observation f96b64c3-ef86-4bfa-9f01-57e8c0173077 · outbound

This paper cites MnGa- based fully perpendicular magnetic tunnel junctions with ultrathin Co2MnSi interlayers.

Influence of chemical stability on the fabrication of MnGa-based devices MnGa- based fully perpendicular magnetic tunnel junctions with ultrathin Co2MnSi interlayers

Reference 12

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:43:32.730096Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:43:32.457415Z digest=sha256:d2a35cb70c8c86a284c242f0590fb8e1001d4e7935cedaef73c03338886b7dc7

Observation 73fb5ef1-c289-46c4-b5c9-ece52b5dbf16 · outbound

This paper cites L10-MnGa based magnetic tunnel junction for high magnetic field sensor.

Influence of chemical stability on the fabrication of MnGa-based devices L10-MnGa based magnetic tunnel junction for high magnetic field sensor

Reference 13

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:43:32.635157Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:43:32.481813Z digest=sha256:1790f5b431d9cce0a62a9e92eacf4e31b7e6aca62df45515c4f4e5e117637b64

Observation 2a856a49-e8ae-4ee1-833f-3adc117bc39e · outbound

This paper cites Robust emergence of a topological Hall effect in MnGa/heavy metal bilayers.

Influence of chemical stability on the fabrication of MnGa-based devices Robust emergence of a topological Hall effect in MnGa/heavy metal bilayers

Reference 14

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:43:32.614407Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:43:32.486392Z digest=sha256:e42bb5caca51a6dfe200c39c7e3ecbe9a3d8987ab59e015fc6e7c7498b1ab7a2

Observation 3d2bcbb2-bf46-447f-ba69-17622f401619 · outbound

This paper cites Observation of orbital two -channel Kondo effect in a ferromagnetic L10-MnGa film.

Influence of chemical stability on the fabrication of MnGa-based devices Observation of orbital two -channel Kondo effect in a ferromagnetic L10-MnGa film

Reference 15

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:43:32.597417Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:43:32.491044Z digest=sha256:a221d96723744e0465e3efac03dc200980a4c6dd8f1d9140005740ea781d5ba3

Observation e5fb8565-9625-4af9-846a-7dde9a580186 · outbound

This paper cites Anomalous Hall effect in epitaxial L10-Mn1.5Ga films with variable chemical ordering.

Influence of chemical stability on the fabrication of MnGa-based devices Anomalous Hall effect in epitaxial L10-Mn1.5Ga films with variable chemical ordering

Reference 16

Resolution
verified fuzzy
raw_fallback, observed 2026-08-14T12:43:32.581092Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:43:32.496288Z digest=sha256:67b95aebd5637f0def93a216731e6724b1c5b1a012b9c6b985e86f386de6654a

Observation 84167fc4-c755-4518-b488-47247bd6dd91 · outbound

This paper cites Magnetic Tetragonal δ Phase in the Mn –Ga Binary.

Influence of chemical stability on the fabrication of MnGa-based devices Magnetic Tetragonal δ Phase in the Mn –Ga Binary

Reference 17

Resolution
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raw_fallback, observed 2026-08-14T12:43:32.564891Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:43:32.501660Z digest=sha256:bf3007a623d091390eefa0314dcb84cb3dcc24a27b6f59d99841a332ab6c654f

Observation 3e708eb9-6dff-4c21-96e7-60961995b268 · outbound

This paper cites Epitaxial MnGa/(Mn,Ga,As)/MnGa trilayers: Growth and magnetic properties.

Influence of chemical stability on the fabrication of MnGa-based devices Epitaxial MnGa/(Mn,Ga,As)/MnGa trilayers: Growth and magnetic properties

Reference 18

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raw_fallback, observed 2026-08-14T12:43:32.548256Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-16T06:30:59.297886+00:00.

source=pdf_text observed=2026-08-14T12:43:32.506307Z digest=sha256:e1429c05a27f6656a9137e501edc69f7ab4a5fdf28dce222dd7446947611505f

Pith citing papers

No inbound Pith citation observations are available.