Pith. sign in

REVIEW 3 major objections 4 minor 140 references

Etude des proprietes optoelectroniques de nanocristaux colloidaux a faible bande interdite : application a la detection infrarouge

T0 review · 3 major / 4 minor · reviewed 2026-08-14 · deepseek-v4-flash

Challenge this review Re-run · record.json Download PDF Read on arXiv ↗ Review JSON

Pith's one-line read HgSe nanocrystals become metallic as their size increases, and a HgTe diode detects 2.5 µm infrared light at 20 mA/W with 3×10^9 Jones detectivity.

desk verdict A solid thesis compilation of HgTe/HgSe nanocrystal work, but the semiconductor-metal transition claim rests on fitted k.p parameters and film-level transport that does not independently prove per-particle metallicity. read the letter →

arxiv 1908.08849 v1 pith:BTYHDVGV submitted 2019-08-23 physics.app-ph cond-mat.soft

Bertille Martinez This is my paper · ORCID
classification physics.app-phcond-mat.soft
keywords colloidalnanocrystalsHgSeTeelectronicstructureself-dopingsemiconductor-metaltransitioninfraredphotodetectorliganddoping
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

The thesis aims to replace expensive epitaxial infrared detectors with solution-grown mercury chalcogenide nanocrystals, and it establishes that the electronic properties of HgSe and HgTe nanocrystals can be mapped and controlled rather than taken as fixed. By combining photoemission, infrared absorption, and a three-band k.p model, the author reconstructs absolute energy levels and the Fermi level for different sizes and surface chemistries. The central result is that HgSe nanocrystals are self-doped, with the electron count rising from about 2 to about 18 per nanocrystal as the diameter grows from 4.5 to 17 nm, driving a semiconductor-to-metal transition confirmed by infrared absorption and low-temperature transport. The same band-engineering data are then used to build a HgTe-based photodiode that detects 2.5 µm light with a photoresponse of 20 mA/W and a detectivity of 3×$10^{9}$ Jones.

What carries the argument

The load-bearing tool is the reconstructed absolute electronic structure of the nanocrystals, built from three complementary measurements plus one model. X-ray photoemission gives the Fermi level and work function; infrared absorption gives the 1Se–1Pe intraband and 1Sh–1Se interband transitions; and a three-band k.p model, with fitted parameters $E_{\Gamma6-\Gamma8} = -0.2$ eV and $E_p = 10.3$ eV for HgSe, places the 1De level. Because the conduction levels in these inverted-gap materials are approximately $\hbar^2\pi^2/(2m_e^* R^2)$ above the band edge, the level on which the Fermi energy sits directly counts electrons per nanocrystal (2, 8, and 18 for 1Se, 1Pe, and 1De). The same machinery yields a phase diagram of doping versus confinement and guides the diode design by providing band energies for contact selection.

What would settle it

Electrochemically titrate the electron count per HgSe nanocrystal as a function of diameter and compare with the predicted occupations of 2, 8, and 18 electrons; if the counts do not step at the claimed sizes, the k.p-derived phase diagram and the size-driven semiconductor-metal transition are unsupported.

Watch

Extended reading notes

Core claim

On the paper's own terms, the central discovery is a size- and surface-dependent electronic phase diagram for HgSe and HgTe nanocrystals. The author reconstructs the full electronic structure from photoemission (Fermi level, work function, valence-band edge), FTIR (interband and intraband transitions), and a three-band k.p calculation of the higher conduction levels. For HgSe, the Fermi level lies above the 1Se level for 4.5 nm particles, above 1Pe for 5.8 nm particles, and above 1De for 17 nm particles, corresponding to roughly 2, 8, and 18 electrons per nanocrystal. This is a semiconductor-to-metal transition driven by decreasing confinement rather than by added dopants, corroborated by the intraband peak becoming a temperature-insensitive plasmon and by the low-temperature hopping exponent switching from Mott ($T^{-1}$/4) to Efros-Shklovskii ($T^{-1}$/2). Surface ligands act as a second control knob: dipolar ligands such as S2− lower the Fermi level and switch interband transitions back on, and electron-accepting polyoxometalate ligands reduce the HgSe doping to 0.03 electron per nanocrystal. The device payoff is a HgTe photodiode in the extended short-wave infrared: a 100-pixel array images a laser profile, and single pixels give 20 mA/W response and 3×$10^{9}$ Jones detectivity at 2.5 µm. The author notes that even the most doped HgSe films remain semiconducting in their resistance-temperature behavior because interparticle transport is still hopping, so the metallicity is per-particle.

Load-bearing premise

The quantitative doping levels and the semiconductor-metal transition rest on the fitted three-band k.p parameters for HgSe ($E_{\Gamma6-\Gamma8} = -0.2$ eV and $E_p = 10.3$ eV) being size-independent, and on reading per-particle metallicity from film-level hopping exponents.

Editorial extensions

If this is right

  • HgSe nanocrystals of controlled size offer tunable mid- to far-infrared plasmonic resonances with carrier densities near 10^18 cm^-3, lower than in doped oxide nanocrystals, so the same material can serve as an intraband absorber or a plasmonic element.
  • Surface-chemistry doping gives a post-synthesis route to p-type or ambipolar mercury-chalcogenide films, useful for reducing dark current and for building junctions without introducing impurity atoms.
  • The measured absolute band energies and work functions for HgTe allow rational electrode and barrier selection, which the author uses to reach a photoresponse of 20 mA/W and a detectivity of 3×10^9 Jones at 2.5 µm.
  • The ink-based phase-transfer ligand exchange produces thicker absorbing layers (around 500 nm) than layer-by-layer film exchange, simplifying fabrication of vertical photodiodes.
  • A 100-pixel HgTe nanocrystal array can reconstruct an infrared laser intensity profile, a proof-of-concept step toward nanocrystal-based infrared cameras.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • The same size-driven Fermi-level rise may occur in other zero-gap or inverted-gap nanocrystals; a testable extension is to map doping versus diameter in HgS and Ag2Se using the same photoemission-plus-infrared reconstruction.
  • The electron counts 2, 8, and 18 correspond to shell filling, so Coulomb-blockade or electrochemical charging experiments could test whether the transition steps through discrete shell occupations, refining the phase diagram beyond the continuum k.p model.
  • Oxidative polyoxometalate ligands could be generalized to produce stable p-type films from other self-doped nanocrystals; a concrete test is to combine them with a strongly dipolar n-type ligand on the same batch to form a ligand-defined p-n junction.
  • The transient-photocurrent Urbach measurement is faster than optical sub-gap absorption and, if it transfers to other materials, gives a practical passivation-quality metric for nanocrystal films.
Share X Bluesky LinkedIn Reddit HN

Signed reviews

No signed human review yet.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

3 major / 4 minor

Summary. This PhD thesis, written in French, studies the optoelectronic properties of colloidal HgSe and HgTe nanocrystals for infrared detection. The central claims are that the Fermi level and doping level of HgSe nanocrystals can be controlled by quantum confinement and by surface ligand chemistry, that HgSe undergoes a size-driven semiconductor-to-metal transition with the electron count increasing from about 2 to 18 electrons per nanocrystal as the diameter grows from 4.5 to 17 nm, and that a HgTe-based photodiode assembled from nanocrystal inks detects 2.5 µm light with a photoresponse of 20 mA/W and a detectivity of 3x10^9 Jones. The manuscript reconstructs the electronic structure using X-ray photoemission, infrared absorption, field-effect transport, and a three-band k.p model, and it also presents an original transient-photocurrent method for measuring the Urbach energy, a redox-doping study using polyoxometalate ligands, and a 100-pixel HgTe imager prototype.

Significance. If the electronic-structure reconstruction is valid, the thesis provides a coherent and useful picture of how confinement and surface chemistry tune doping in narrow-gap colloidal nanocrystals. The main experimental strengths are direct photoemission measurements of absolute level positions and work functions, systematic size- and ligand-dependent spectroscopy, a transient-photocurrent method for trap distributions, XPS evidence for electron transfer to polyoxometalate ligands, and a demonstrated SWIR photodiode with a multipixel array. These are concrete, falsifiable results that go beyond a purely phenomenological study. The weak point is that the quantitative doping counts and the semiconductor-to-metal transition rest on a k.p model fitted to the same class of intraband transitions that the model is then used to interpret; this is a parameterized consistency argument rather than an independent determination. The device-oriented chapters and the ligand-doping control are largely independent of that fragility and appear sound.

major comments (3)
  1. [Ch. 2, §II.2.b.ii (Eq. 2.12)] The electron counts per nanocrystal, and hence the claimed semiconductor-to-metal transition, are quantitatively set by the position of the 1De level calculated from the three-band k.p model. The parameters EΓ6-Γ8 = -0.2 eV and Ep = 10.3 eV are obtained by fitting intraband transition energies from the literature and from the author's own measurements. Using these fitted levels to interpret the same type of intraband data, and to infer 2, 8, or 18 electrons per nanocrystal, is a fit-to-data consistency check, not an independent prediction. The manuscript gives no uncertainty bars on the fitted parameters, no test of their size independence, and no alternative determination of the doping level. I therefore regard the quantitative 18-electron count and the precise location of the semiconductor-to-metal boundary as not fully supported, even though the qualitative trend of increasing n-type doping with decreasing confinement is plausible from the direct photoemission data.
  2. [Ch. 2, §II.3.b (Fig. 46)] The transport measurements are presented as validating the semiconductor-to-metal transition, but the T^-1/4 (Mott) versus T^-1/2 (Efros-Shklovskii) analysis distinguishes two hopping regimes and does not by itself establish that the individual particles are metallic. The manuscript explicitly states that the film resistance still decreases with increasing temperature in both cases, i.e., the film remains semiconducting, so the metal-insulator transition is claimed at the per-particle level while the measured quantity is a film-level property. This evidence is therefore weaker than the text suggests and cannot independently compensate for the uncertainty in the k.p-based doping levels. The authors should either soften the transport-based confirmation, provide an explicit model showing how per-particle metallicity maps onto the observed exponent, or add independent per-particle evidence such as gate-dependent spectroscopy or single-nanocrystal measurements.
  3. [Ch. 2, §II.3.a (Eq. 2.13)] The infrared plasmon check is an order-of-magnitude consistency test, not an independent cross-check. The carrier density obtained from the plasmon frequency (6.3x10^18 cm^-3) is compared with the value inferred from the k.p-based level occupancy (4.5x10^18 cm^-3), but both estimates use the same effective mass and the same electronic-structure model. The agreement to within a factor of about 1.4 confirms that the measured intraband feature is compatible with a collective plasmon, but it does not add independent support for the 18-electron count. This should be stated more cautiously in the conclusions of Chapter 2.
minor comments (4)
  1. [Notations et abréviations (p. 5)] The heading contains a typo: 'Abréviatons' should be 'Abréviations'.
  2. [Ch. 4, heading and opening paragraph of Section I] The phrase 'dans le but de construire une caméra et donc, et donc d'être capable de reconstruire une image' contains a duplicated 'et donc'; one occurrence should be removed.
  3. [Ch. 2, Fig. 41 and Fig. 42] The figure captions do not state the k.p model parameters used to place the 1De level, nor the assumed degeneracies (2, 6, 10 electrons) underlying the doping counts. Adding this information in the captions would make the derivation easier to audit.
  4. [Ch. 3, Eq. (3.2)] The thermal-activation expression n = 2 exp(-(E1Se - EF)/kBT) is introduced without derivation; the prefactor of 2 deserves a brief explanation (spin degeneracy or level degeneracy) so that the resulting 0.03-electron estimate is reproducible.

Circularity Check

1 steps flagged · score 4.0 of 10

HgSe metallicity and electron count are partly model-forced: the 1De level is computed from the same k.p parameters fitted to intraband data; transport exponents do not independently establish per-particle metallicity.

  1. fitted input called prediction [Chapter 2, Section II.2.b.ii (Equation 2.12), used in Section II.2.b.iii and the Figure 42 phase diagram]
    "Les seuls paramètres de cette équation sont EΓ6-Γ8 et Ep, que l'on peut déterminer par simulation. En ajoutant les résultats de la littérature à nos données pour les valeurs des transitions intrabandes dans HgSe à différentes tailles(49, 51), j'obtiens que EΓ6-Γ8 vaut -0,2 eV et Ep vaut 10,3 eV pour HgSe. ... Les valeurs des transitions 1De – 1Pe sont ensuite obtenues en utilisant les valeurs de k correspondant à ces niveaux ... soit 4,49/R pour 1Pe et 5,76/R pour 1De."

    The 1De level is the quantity that, when crossed by the measured Fermi level, yields the 18-electron/metallic state for the 17 nm HgSe nanocrystals (Figure 42). But 1De is not measured: it is computed from Eq. (2.12) using EΓ6-Γ8 = -0.2 eV and Ep = 10.3 eV, two parameters just fitted to intraband transition data of the same HgSe nanocrystal family, including the author's own data. The electron-count ladder (2, 8, 18 e-) and the size at which the semiconductor-metal crossover occurs are therefore in-sample outputs of that calibration, not independent predictions. The photoemission Fermi level and optical transitions are measured independently, so the circularity is partial, but the quantitative metallicity claim is not self-contained.

full rationale

The thesis rests on several independent experimental measurements: XPS gives absolute Fermi-level and work-function positions; FTIR gives interband and intraband transitions; FET and electrochemistry give carrier-type; and the E-SWIR diode photoresponse is directly measured. None of those results reduce by definition to the claimed outputs. The main circularity-adjacent step is the HgSe electron-count/metallicity ladder. The 1De energy that separates the 8-electron and 18-electron regimes is not measured but computed from the two-parameter k.p dispersion of Eq. (2.12), and those two parameters were calibrated on intraband transition energies from the same HgSe nanocrystal system. Consequently the 18-electron count and the size-driven semiconductor-metal crossover are partly model-forced outputs rather than out-of-sample predictions. The infrared plasmon cross-check is only order-of-magnitude and uses the same effective-mass input. In addition, the transport validation is weaker than claimed: the manuscript itself admits the film resistance still has a semiconducting temperature dependence, so the Mott versus Efros-Shklovskii exponents distinguish hopping regimes, not per-particle metallic versus semiconducting behavior. This is a correctness caveat rather than a circular step. Self-citations appear frequently but are used as data sources and prior measurements, not as load-bearing authority to forbid alternatives. Overall, the central direct experimental claims are self-contained, but the quantitative semiconductor-metal transition in HgSe is partially constructed from the fitted k.p parameters, giving a score of 4.

Assumptions & free parameters 4 free parameters · 4 assumptions · 0 invented entities

The central claims rely on several fitted parameters and domain assumptions, but the main experimental trends do not reduce to these assumptions alone.

free parameters (4)
  • EΓ6-Γ8 (mercury selenide k.p gap) = -0.2 eV
    Fitted in Chapter 2 II.2.b.ii using literature and own intraband data; used to compute 1De level and electron counts.
  • Ep (Kane energy) = 10.3 eV
    Same fitting, used in the three-band k.p model for HgSe conduction band.
  • Urbach power-law exponent b = -0.27 (for EDT ligand)
    Fitted to transient photocurrent decay (Chapter 2 III.3.a); Eu = kBT/(b+1) gives 34 meV.
  • Hooge constant alpha = not numerically specified
    Appears in noise spectral density formula (Eq. 1.13) as an adjustable parameter from literature.
assumptions (4)
  • domain assumption Effective mass and k.p approximations describe the conduction band of HgSe nanocrystals across the investigated size range.
    Used to compute 1De level and reconstruct electronic structure (Chapter 2, II.2.b.ii).
  • domain assumption Mott (T^-1/4) and Efros-Shklovskii (T^-1/2) variable-range hopping regimes can be used to infer the metallic or semiconducting character of individual nanoparticles from film transport.
    Underpins the semiconductor-metal transition claim (Chapter 2, II.3.b).
  • domain assumption The transient photocurrent power-law decay reflects an exponential Urbach tail of trap states, and Eu = kBT/(b+1) holds.
    Used to measure trap density distribution for different ligands (Chapter 2, III.3.a).
  • ad hoc to paper HgSe nanocrystal self-doping arises from a redox reaction with ambient water/oxygen because the 1Se level lies below the O2/H2O potential.
    Proposed mechanism for the observed n-type doping (Chapter 3, section I.3).

how reviews work

0 comments
Cite this review

Pith. "Pith review of Etude des proprietes optoelectroniques de nanocristaux colloidaux a faible bande interdite : application a la detection infrarouge." pith.science (2026). https://pith.science/paper/BTYHDVGV

@misc{pith2026190808849,
  author       = {Pith},
  title        = {Pith review of: Etude des proprietes optoelectroniques de nanocristaux colloidaux a faible bande interdite : application a la detection infrarouge},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/BTYHDVGV}},
  note         = {Machine review of arXiv:1908.08849}
}
read the original abstract

Colloidal semiconductor nanocrystals are nanomaterials synthesized in solution. Below a certain size, these nanocrystals acquire quantum confinement properties: their optoelectronic properties depend on the nanoparticle size. In the visible range, colloidal nanocrystals are quite mature. The next objective in this field is to get infrared colloidal nanocrystals. Mercury selenide (HgSe) and mercury telluride (HgTe) are potential candidates. The goal of this PhD work is to strengthen our knowledge on optical, optoelectronic and transport properties of these nanocrystals, in order to design an infrared detector. To do so, we studied the electronic structure of HgSe and HgTe for different sizes and surface chemistries. We can then determine the energies of the electronic levels and the Fermi energy, quantify doping level. We show that the nanocrystal size has an influence on doping level, which gets more and more n-type as the nanocrystal size gets larger. We even observe a semiconductor-metal transition in HgSe nanocrystals as the size is increased. The doping control with surface chemistry is then investigated. By using dipolar effects or oxidizing ligands, we show a doping control over several orders of magnitude. Thanks to these studies, we are able to propose a HgTe based device for detection at 2,5 um, which structure allows to convert effectively the absorbed photons into an electrical current and to get a high signal over noise ratio. We get a photoresponse of 20 mA/W and a detectivity of 3.10^9 Jones.

Figures

Figures reproduced from arXiv: 1908.08849 by the authors.

Figure 45
Figure 45. Transport dans des films de nanoparticules (Variable Range Hopping) - schéma. ............ 67 [PITH_FULL_IMAGE:figures/full_fig_p144_45.png] view at source ↗
Figure 93
Figure 93. Schéma de principe de la photolithographie en utilisant une résine négative.................... 130 [PITH_FULL_IMAGE:figures/full_fig_p145_93.png] view at source ↗

Discussion (0). Continue with ORCID to comment.

Reference graph

Works this paper leans on

140 extracted references · 80 canonical work pages

  1. [1]

    The Bakerian Lecture

    Faraday Michael, X. The Bakerian Lecture. —Experimental relations of gold (and other metals) to light. Philos. Trans. R. Soc. Lond. 147, 145–181 (1857)

  2. [2]

    Mie, Beiträge zur Optik trüber Medien, speziell kolloidaler Metallösungen

    G. Mie, Beiträge zur Optik trüber Medien, speziell kolloidaler Metallösungen. Ann. Phys. 330, 377–445 (1908)

    1908

  3. [3]

    Delerue, D

    C. Delerue, D. Vanmaekelbergh, Electronic band structure of zinc blende CdSe and rock salt PbSe semiconductors with silicene-type honeycomb geometry. 2D Mater. 2, 34008 (2015)

    2015

  4. [4]

    Benchamekh, N

    R. Benchamekh, N. A. Gippius, J. Even, M. O. Nestoklon, J. -M. Jancu, S. Ithurria, B. Dubertret, A. L. Efros, P. Voisin, Tight -binding calculations of image -charge effects in colloidal nanoscale platelets of CdSe. Phys. Rev. B. 89, 35307 (2014)

    2014

  5. [5]

    Kittel, Théorie quantique du solide (Dunod, 1967)

    C. Kittel, Théorie quantique du solide (Dunod, 1967)

    1967

  6. [6]

    Hill, Energy-gap variations in semiconductor alloys

    R. Hill, Energy-gap variations in semiconductor alloys. J. Phys. C Solid State Phys. 7, 521–526 (1974)

    1974

  7. [7]

    Sadao, GaAs And Related Materials (World Scientific, 1994)

    A. Sadao, GaAs And Related Materials (World Scientific, 1994)

    1994

  8. [8]

    Y. P. Varshni, Temperature dependence of the energy gap in semiconductors. Physica. 34, 149–154 (1967)

    1967

Show all 140 references
  1. [9]

    V. I. Klimov, Semiconductor and Metal Nanocrystals: Synthesis and Electronic and Optical Properties (CRC Press, 2003)

    2003

  2. [10]

    Rinnerbauer, K

    V. Rinnerbauer, K. Hingerl, M. Kovalenko, W. Heiss, Effect of quantum confinement on higher transitions in HgTe nanocrystals. Appl. Phys. Lett. 89, 193114 (2006)

    2006

  3. [11]

    Goubet, A

    N. Goubet, A. Jagtap, C. Livache, B. Martinez, H. Portalès, X. Z. Xu, R. P. S. M. Lobo, B. Dubertret, E. Lhuillier, Terahertz HgTe Nanocrystals: Beyond Confinement. J. Am. Chem. Soc. 140, 5033–5036 (2018)

    2018

  4. [12]

    J. M. Pietryga, Y. -S. Park, J. Lim, A. F. Fid ler, W. K. Bae, S. Brovelli, V. I. Klimov, Spectroscopic and Device Aspects of Nanocrystal Quantum Dots. Chem. Rev. 116, 10513 – 10622 (2016)

    2016

  5. [13]

    C. B. Murray, D. J. Norris, M. G. Bawendi, Synthesis and characterization of nearly monodisperse CdE (E = sulf ur, selenium, tellurium) semiconductor nanocrystallites. J. Am. Chem. Soc. 115, 8706–8715 (1993)

    1993

  6. [14]

    Jasieniak, L

    J. Jasieniak, L. Smith, J. van Embden, P. Mulvaney, M. Califano, Re -examination of the Size - Dependent Absorption Properties of CdSe Quantum Dots. J. Phys. Chem. C. 113, 19468–19474 (2009)

    2009

  7. [15]

    M. A. Hines, P. Guyot-Sionnest, Synthesis and Characterization of Strongly Luminescing ZnS- Capped CdSe Nanocrystals. J. Phys. Chem. 100, 468–471 (1996)

    1996

  8. [16]

    Tamang, C

    S. Tamang, C. Lincheneau, Y. Hermans, S. Jeong, P. Reiss, Chemistry of InP Nanocrystal Syntheses. Chem. Mater. 28, 2491–2506 (2016)

    2016

  9. [17]

    J. L. Stein, E. A. Mader, B. M. Cossairt, Luminescent InP Quantum Dots with Tunable Emission by Post-Synthetic Modification with Lewis Acids. J. Phys. Chem. Lett. 7, 1315–1320 (2016)

    2016

  10. [18]

    Nedelcu, L

    G. Nedelcu, L. Protesescu, S. Yakunin, M. I. Bodnarchuk, M. J. Grotevent, M. V. Kovalenko, Fast Anion-Exchange in Highly Luminescent Nanocrystals of Cesium Lead Halide Perovskites (CsPbX3, X = Cl, Br, I). Nano Lett. 15, 5635–5640 (2015)

    2015

  11. [19]

    B. G. Streetman, S. K. Banerjee, Solid State Electronic Devices (2014), Pearson

    2014

  12. [20]

    M. A. Hines, G. D. Scholes, Colloidal PbS Nanocrystals with Size -Tunable Near -Infrared Emission: Observation of Post-Synthesis Self-Narrowing of the Particle Size Distribution. Adv. Mater. 15, 1844–1849 (2003)

    2003

  13. [21]

    Y. Pan, Y. R. Li, Y. Zhao, D. L. Akins, Synthesis and Characterization of Quantum Dots: A Case Study Using PbS. J. Chem. Educ. 92, 1860–1865 (2015)

    2015

  14. [22]

    Martinez, C

    B. Martinez, C. Livache, L. D. Notemgnou Mouafo, N. Gou bet, S. Keuleyan, H. Cruguel, S. Ithurria, H. Aubin, A. Ouerghi, B. Doudin, E. Lacaze, B. Dubertret, M. G. Silly, R. P. S. M. Bibliographie 150 Lobo, J.-F. Dayen, E. Lhuillier, HgSe Self-Doped Nanocrystals as a Platform t...

    2017

  15. [23]

    Allan, C

    G. Allan, C. Delerue, Tight-binding calculations of the optical properties of HgTe nanocrystals. Phys. Rev. B. 86, 165437 (2012)

    2012

  16. [24]

    Jagtap, B

    A. Jagtap, B. Martinez, N. Goubet, A. Chu, C. Livache, C. Gréboval, J. Ramade, D. Amelot, P. Trousset, A. Triboulin, S. Ithurria, M. G. Silly, B. Dubertret, E. Lhuillier, Design of a Unipolar Barrier for a Nanocrystal -Based Short -Wave Infrared Photodiode. ACS Photonics . 5, ...

    2018

  17. [25]

    McWorhter, 1/f noise nd related surface effects in Germanium (1955)

    A. McWorhter, 1/f noise nd related surface effects in Germanium (1955)

    1955

  18. [26]

    F. N. Hooge, A. M. H. Hoppenbrouwers, 1/ ⨍ noise in continuous thin gold films. Physica. 45, 386–392 (1969)

    1969

  19. [27]

    Y. Lai, H. Li, D. K. Kim, B. T. Diroll, C. B. Murray, C. R. Kagan, Low -Frequency (1/f) Noise in Nanocrystal Field-Effect Transistors. ACS Nano. 8, 9664–9672 (2014)

    2014

  20. [28]

    J. F. Stephany, Origin of 1/f noise. J. Appl. Phys. 46, 665–667 (1975)

    1975

  21. [29]

    Jiang, X

    M. Jiang, X. Cao, S. Bao, H. Zhou, P. Jin, Regulation of the phase transition temperature of VO2 thin films deposited by reactive magnetron sputtering without doping. Thin Solid Films . 562, 314–318 (2014)

    2014

  22. [30]

    Rogalski, Infrared detectors: an overview

    A. Rogalski, Infrared detectors: an overview. Infrared Phys. Technol. 43, 187–210 (2002)

    2002

  23. [31]

    D. W. Palmer, www.semiconductors.co.uk (2003), (available at www.semiconductors.co.uk)

    2003

  24. [32]

    A. Nag, M. V. Kovalenko, J.-S. Lee, W. Liu, B. Spokoyny, D. V. Talapin, Metal-free Inorganic Ligands for Colloidal Nanocrystals: S2 –, HS–, Se2–, HSe–, Te2–, HTe–, TeS32–, OH–, and NH2– as Surface Ligands. J. Am. Chem. Soc. 133, 10612–10620 (2011)

    2011

  25. [33]

    Keuleyan, E

    S. Keuleyan, E. Lhuillier, V. Brajuskovic, P. Guyot -Sionnest, Mid -infrared HgTe colloidal quantum dot photodetectors. Nat. Photonics. 5, 489–493 (2011)

    2011

  26. [34]

    G. M. Dalpian, J. R. Chelikowsky, Self-Purification in Semiconductor Nanocrystals. Phys. Rev. Lett. 96, 226802 (2006)

    2006

  27. [35]

    Amelia, C

    M. Amelia, C. Lincheneau, S. Silvi, A. Credi, Electrochemical properties of CdSe and CdTe quantum dots. Chem. Soc. Rev. 41, 5728–5743 (2012)

    2012

  28. [36]

    N. P. Osipovich, S. K. Poznyak, V. Lesnyak, N. Gaponik, Cyclic voltammetry as a sensitive method for in situ probing of chemical transformations in quantum dots. Phys. Chem. Chem. Phys. 18, 10355–10361 (2016)

    2016

  29. [37]

    S. K. Poznyak, N. P. Osipovich, A. Shavel, D. V. Talapin, M. Gao, A. Eychmüller, N. Gaponik, Size -Dependent Electrochemical Behavior of Thiol -Capped CdTe Nanocrystals in Aqueous Solution. J. Phys. Chem. B. 109, 1094–1100 (2005)

    2005

  30. [38]

    M. Chen, P. Guyot -Sionnest, Reversible Electrochemistry of Mercury Chalcogenide Colloidal Quantum Dot Films. ACS Nano. 11, 4165–4173 (2017)

    2017

  31. [39]

    C. Wang, M. Shim, P. Guyot -Sionnest, Electrochromic Nanocrystal Quantum Dots. Science. 291, 2390–2392 (2001)

    2001

  32. [40]

    Robertson, Hig h dielectric constant gate oxides for metal oxide Si transistors

    J. Robertson, Hig h dielectric constant gate oxides for metal oxide Si transistors. Rep. Prog. Phys. 69, 327–396 (2005)

    2005

  33. [41]

    Lhuillier, S

    E. Lhuillier, S. Ithurria, A. Descamps -Mandine, T. Douillard, R. Castaing, X. Z. Xu, P. -L. Taberna, P. Simon, H. Aubin, B. Dubertret, Investigating the n - and p -Type Electrolytic Charging of Colloidal Nanoplatelets. J. Phys. Chem. C. 119, 21795–21799 (2015)

    2015

  34. [42]

    Martinez, C

    B. Martinez, C. Livache, N. Goubet, A. Jagtap, H. Cruguel, A. Ouerghi, E. Lacaze, M. G. Silly, E. Lhuillier, Probing Charge Carrier Dynamics to Unveil the Role of Surface Ligands in HgTe Narrow Band Gap Nanocrystals. J. Phys. Chem. C. 122, 859–865 (2018)

    2018

  35. [43]

    Henck, D

    H. Henck, D. Pierucci, J. Chaste, C. H. Naylor, J. Avila, A. Balan, M. G. Silly, M. C. Asensio, F. Sirotti, A. T. C. Johnson, E. Lhuill ier, A. Ouerghi, Electrolytic phototransistor based on graphene-MoS2 van der Waals p -n heterojunction with tunable photoresponse. Appl. Phys...

    2016

  36. [44]

    Lhuillier, A

    E. Lhuillier, A. Robin, S. Ithurria, H. Aubin, B. Dubertret, Electrolyte -Gated Coll oidal Nanoplatelets-Based Phototransistor and Its Use for Bicolor Detection. Nano Lett. 14, 2715– 2719 (2014). Bibliographie 151

    2014

  37. [45]

    Lhuillier, M

    E. Lhuillier, M. Scarafagio, P. Hease, B. Nadal, H. Aubin, X. Z. Xu, N. Lequeux, G. Patriarche, S. Ithurria, B. Dubertret, Infrared Photodete ction Based on Colloidal Quantum -Dot Films with High Mobility and Optical Absorption up to THz. Nano Lett. 16, 1282–1286 (2016)

    2016

  38. [46]

    A. C. Thompson, D. T. Attwood, E. M. Gullikson, M. R. Howells, J. B. Kortright, A. L. Robinson, J. H. Underwood, K. J. Kim , J. Kirz, I. Lindau, P. Pianetta, H. Winick, G. P. Williams, J. H. Scofields, X-Ray Data Booklet (2009)

    2009

  39. [47]

    Keuleyan, E

    S. Keuleyan, E. Lhuillier, P. Guyot -Sionnest, Synthesis of Colloidal HgTe Quantum Dots for Narrow Mid-IR Emission and Detection. J. Am. Chem. Soc. 133, 16422–16424 (2011)

    2011

  40. [48]

    Robin, C

    A. Robin, C. Livache, S. Ithurria, E. Lacaze, B. Dubertret, E. Lhuillier, Surface Control of Doping in Self-Doped Nanocrystals. ACS Appl. Mater. Interfaces. 8, 27122–27128 (2016)

    2016

  41. [49]

    Jeong, B

    J. Jeong, B. Yoon, Y. -W. Kwon, D. Choi, K. S. Jeong, Singly and Doubly Occupied Higher Quantum States in Nanocrystals. Nano Lett. 17, 1187–1193 (2017)

    2017

  42. [50]

    Lhuillier, S

    E. Lhuillier, S. Keuleyan, P. Guyot -Sionnest, Optical properties of HgTe colloidal quantum dots. Nanotechnology. 23, 175705 (2012)

    2012

  43. [51]

    Z. Deng, K. S. Jeong, P. Guyot -Sionnest, Colloidal Quantum Dots Intraband Photodetectors. ACS Nano. 8 (11), 11707–11714 (2014)

    2014

  44. [52]

    N. F. Mott, Metal-Insulator Transition. Rev. Mod. Phys. 40, 677–683 (1968)

    1968

  45. [53]

    H. Fu, K. V. Reich, B. I. Shklovskii, Hopp ing conductivity and insulator -metal transition in films of touching semiconductor nanocrystals. Phys. Rev. B. 93, 125430 (2016)

    2016

  46. [54]

    T. Chen, K. V. Reich, N. J. Kramer, H. Fu, U. R. Kortshagen, B. I. Shklovskii, Metal -insulator transition in films of doped semiconductor nanocrystals. Nat. Mater. 15, 299–303 (2016)

    2016

  47. [55]

    J. Qu, C. Livache, B. Martinez, C. Greboval, A. Chu, E. Merrigio, J. Ramade, H. Cruguel, X. Xu, A. Proust, F. Volatron, G. Cabailh, N. Goubet, E. Lhuillier, Transport in ITO Nanocrystals with Short- to Long-Wave Infrared Absorption for Heavy Metal -Free Infrared Photodetection...

    2019

  48. [56]

    M. K. H. Taha, O. Boisron, B. Canut, P. Melinon, J. Penuelas, M. Gendry, B. Masenelli, Control of the compensating def ects in Al -doped and Ga -doped ZnO nanocrystals for MIR plasmonics. RSC Adv. 7, 28677–28683 (2017)

    2017

  49. [57]

    Einfeldt, F

    S. Einfeldt, F. Goschenhofer, C. R. Becker, G. Landwehr, Optical properties of HgSe. Phys. Rev. B. 51, 4915–4925 (1995)

    1995

  50. [58]

    A. M. Schimpf, N. Thakkar, C. E. Gunthardt, D. J. Masiello, D. R. Gamelin, Charge -Tunable Quantum Plasmons in Colloidal Semiconductor Nanocrystals. ACS Nano . 8, 1065 –1072 (2014)

    2014

  51. [59]

    G. Shen, P. Guyot -Sionnest, HgS and HgS/CdS Colloidal Quantum Dots with Infrared Intraband Transitions and Emergence of a Surface Plasmon. J. Phys. Chem. C . 120, 11744– 11753 (2016)

    2016

  52. [60]

    T. B. Tran, I. S. Beloborodov, X. M. Lin, T. P. Bigioni, V. M. Vinokur, H. M. Jaeger, Multiple Cotunneling in Large Quantum Dot Arrays. Phys. Rev. Lett. 95, 76806 (2005)

    2005

  53. [61]

    Moreira, Q

    H. Moreira, Q. Yu, B. Nadal, B. Bresson, M. Rosticher, N. Lequeux, A. Zimmers, H. Aubin, Electron Cotunneling Transport in Gold Nanocrystal Arrays. Phys. Rev. Lett. 107, 176803 (2011)

    2011

  54. [62]

    Guyot-Sionnest, Electrical Transport in Colloidal Quan tum Dot Films

    P. Guyot-Sionnest, Electrical Transport in Colloidal Quan tum Dot Films. J. Phys. Chem. Lett. 3, 1169–1175 (2012)

    2012

  55. [63]

    C.-H. M. Chuang, A. Maurano, R. E. Brandt, G. W. Hwang, J. Jean, T. Buonassisi, V. Bulović, M. G. Bawendi, Open-Circuit Voltage Deficit, Radiative Sub-Bandgap States, and Prospects in Quantum Dot Solar Cells. Nano Lett. 15, 3286–3294 (2015)

    2015

  56. [64]

    Guyot-Sionnest, E

    P. Guyot-Sionnest, E. Lhuillier, H. Liu, A mirage study of CdSe colloidal quantum dot films, Urbach tail, and surface states. J. Chem. Phys. 137, 154704 (2012)

    2012

  57. [65]

    C. Main, D. Nesheva, Transient Photocurrent Techniques as a Means of Characterising Amorphous Semiconductors. J. Optoelectron. Adv. Mater. 3, 655–664 (2001)

    2001

  58. [66]

    Orenstein, M

    J. Orenstein, M. A. Kastner, V. Vaninov, Transient photoconductivity and photo -induced optical absorption in amorphous semiconductors. Philos. Mag. Part B. 46, 23–62 (1982)

    1982

  59. [67]

    Orenstein, M

    J. Orenstein, M. Kastner, Photocurrent Transient Spectroscopy: Measurement of the Density of Localized States in -As2Se3. Phys. Rev. Lett. 46, 1421–1424 (1981). Bibliographie 152

    1981

  60. [68]

    J. Tang, K. W. Kemp, S. Hoogland, K. S. Jeong, H. Liu, L. Levina, M. Furukawa, X. Wang, R. Debnath, D. Cha, K. W. Chou, A. Fischer, A. Amassian, J. B. Asbury, E. H. Sargent, Colloidal- quantum-dot photovoltaics using atomic-ligand passivation. Nat. Mater. 10, 765–771 (2011)

    2011

  61. [69]

    A. T. Fafarman, W. Koh, B. T. Diroll, D. K. Kim, D.-K. Ko, S. J. Oh, X. Ye, V. Doan-Nguyen, M. R. Crump, D. C. Reifsnyder, C. B. Murray, C. R. Kagan, Thiocyanate -Capped Nanocrystal Colloids: Vibrational Reporter of Surface Chemistry and Solution-Based Route to Enhanced Coupli...

    2011

  62. [70]

    Lhuillier, S

    E. Lhuillier, S. Keuleyan, P. Zolotavin, P. Guyot -Sionnest, Mid -Infrared HgTe/As2S3 Field Effect Transistors and Photodetectors. Adv. Mater. 25, 137–141 (2013)

    2013

  63. [71]

    Dufour, E

    M. Dufour, E. Izquierdo, C. Livache, B. Martinez, M. G. Silly, T. Pons, E. Lhuillier, C. Delerue, S. Ithurria, Doping as a Strategy to Tune Color of 2D Colloidal Nanoplatelets. ACS Appl. Mater. Interfaces. 11, 10128–10134 (2019)

    2019

  64. [72]

    S. C. Erwin, L. Zu, M. I. Haftel, A. L. Efros, T. A. Kennedy, D. J. Norris, Doping semiconductor nanocrystals. Nature. 436, 91–94 (2005)

    2005

  65. [73]

    A. Sahu, M. S. Kang, A. Kompch, C. Notthoff, A. W. Wills, D. Deng, M. Winterer, C. D. Frisbie, D. J. Norris, E lectronic Impurity Doping in CdSe Nanocrystals. Nano Lett. 12, 2587– 2594 (2012)

    2012

  66. [74]

    D. J. Norris, A. L. Efros, S. C. Erwin, Doped Nanocrystals. Science. 319, 1776–1779 (2008)

    2008

  67. [75]

    M. K. Hamza, J. -M. Bluet, K. Masenelli -Varlot, B. Canut, O. Boisron, P. M elinon, B. Masenelli, Tunable mid IR plasmon in GZO nanocrystals. Nanoscale. 7, 12030–12037 (2015)

    2015

  68. [76]

    J. Qu, N. Goubet, C. Livache, B. Martinez, D. Amelot, C. Gréboval, A. Chu, J. Ramade, H. Cruguel, S. Ithurria, M. G. Silly, E. Lhuillier, Intraband Mid -Infrared Transitions in Ag2Se Nanocrystals: Potential and Limitations for Hg -Free Low-Cost Photodetection. J. Phys. Chem. C...

    2018

  69. [77]

    A. H. Nethercot, Prediction of Fermi Energies and Photoelectric Thresholds Based on Electronegativity Concepts. Phys. Rev. Lett. 33, 1088–1091 (1974)

    1974

  70. [78]

    Livache, E

    C. Livache, E. Izquierdo, B. Martinez, M. Dufour, D. Pierucci, S. Keuleyan, H. Cruguel, L. Becerra, J. L. Fave, H. Aubin, A. Ouerghi, E. Lacaze, M. G. Silly, B. Dubertret, S. Ithurria, E. Lhuillier, Charge Dynamics and Optolectronic Properties in HgTe Colloidal Quantum Wells. ...

    2017

  71. [79]

    Guyot -Sionnest, M

    P. Guyot -Sionnest, M. A. Hines, Intraband transitions in semiconductor nanocrystals. Appl. Phys. Lett. 72, 686–688 (1998)

    1998

  72. [80]

    P. R. Brown, D. Kim, R. R. Lunt, N. Zhao, M. G. Bawendi, J. C. Grossman, V. Bulović, Energy Level Modification in Lead Sulfide Quantum Dot Thin Films through Ligand Exchange. ACS Nano. 8, 5863–5872 (2014)

    2014

  73. [81]

    D. M. Kroupa, M. Vörös, N. P. Brawand, B. W. McNichols, E. M. Miller, J. Gu, A. J. Nozik, A. Sellinger, G. Galli, M. C. Beard, Tuning colloidal quantum dot band edge positions through solution-phase surface chemistry modification. Nat. Commun. 8, 15257 (2017)

    2017

  74. [82]

    C.-H. M. Chuang, P. R. Brown, V. Bu lović, M. G. Bawendi, Improved performance and stability in quantum dot solar cells through band alignment engineering. Nat. Mater. 13, 796– 801 (2014)

    2014

  75. [83]

    K. S. Jeong, Z. Deng, S. Keuleyan, H. Liu, P. Guyot -Sionnest, Air-Stable n-Doped Colloidal HgS Quantum Dots. J. Phys. Chem. Lett. 5, 1139–1143 (2014)

    2014

  76. [84]

    S. Yang, D. Prendergast, J. B. Neaton, Tuning Semiconductor Band Edge Energies for Solar Photocatalysis via Surface Ligand Passivation. Nano Lett. 12, 383–388 (2012)

    2012

  77. [85]

    de Boer, A

    B. de Boer, A. Hadipour, M. M. Mandoc, T. van Woudenbergh, P. W. M. Blom, Tuning of Metal Work Functions with Self-Assembled Monolayers. Adv. Mater. 17, 621–625 (2005)

    2005

  78. [86]

    Z. Deng, P. Guyot -Sionnest, Intraband Luminescence from HgSe/CdS Core/Shell Quantum Dots. ACS Nano. 10, 2121–2127 (2016)

    2016

  79. [87]

    Rocchiccioli-Deltcheff, M

    C. Rocchiccioli-Deltcheff, M. Fournier, R. Franck, R. Thouvenot, Vibrational investigations of polyoxometalates. 2. Evidence for anion -anion interactions in Molybdenum(VI) and Tungsten(VI) compounds related to the Keggin structure. Inorg. Chem. 22, 207–216 (1983)

    1983

  80. [88]

    Souchay, Polyanions and polycations (1963), Gauthier-Villars, Paris

    P. Souchay, Polyanions and polycations (1963), Gauthier-Villars, Paris

    1963

  81. [89]

    Huder, C

    L. Huder, C. Rinfray, D. Rouchon, A. Benayad, M. Baraket, G. Izzet, F. Lipp -Bregolin, G. Lapertot, L. Dubois, A. Proust, L. Jansen, F. Duclairoir, Evidence for Charge Transfer at the Bibliographie 153 Interface between Hybrid Phosphomolybdate and Epitaxial Graphene. Langmuir....

    2016

  82. [90]

    Sadakane, E

    M. Sadakane, E. Steckhan, Electrochemical Properties of Polyoxometalates as Electrocatalysts. Chem. Rev. 98, 219–238 (1998)

    1998

  83. [91]

    Huang, W

    J. Huang, W. Liu, D. S. Dolzhnikov, L. Protesescu, M. V. Kovalenko, B. Koo, S. Chattopadhyay, E. V. Shenchenko, D. V. Talapin, Surface Functionalization of Semiconductor and Oxide Nanocrystals with Small Inorganic Oxoanions (PO43 –, MoO42 –) and Polyoxometalate Ligands. ACS Na...

    2014

  84. [92]

    K. T. Ng, D. M. Hercules, XPS studies of oxides of row transition metals of W. J. Phys. Chem. C. 80, 2095 (1976)

    1976

  85. [93]

    G. E. McGuire, G. K. Schweitzer, T. A. Carlson, Core electron binding energies in some Group IIIA, VB, and VIB compounds. Inorg. Chem. 12, 2450–2453 (1973)

    1973

  86. [94]

    Pedetti, B

    S. Pedetti, B. Nadal, E. Lhuillier, B. Mahler, C. Bouet, B. Abécassis, X. Xu, B. Dubertret, Optimized Synthesis of CdTe Nanoplatelets and Photoresponse of CdTe Nanoplatelets Films. Chem. Mater. 25, 2455–2462 (2013)

    2013

  87. [95]

    M. Shim, P. Guyot -Sionnest, n-type colloidal semiconductor nanocrystals. Nature. 407, 981– 983 (2000)

    2000

  88. [96]

    W. Koh, A. Y. Koposov, J. T. Stewart, B. N. Pal, I. Robel, J. M. Pietryga, V. I. Klimov, Heavily doped n-type PbSe and PbS nanocrystals using ground -state charge transfer from cobaltocene. Sci. Rep. 3, 2004 (2013)

    2013

  89. [97]

    Goubet, C

    N. Goubet, C. Livache, B. Martinez, X. Z. Xu, S. Ithurria, S. Royer, H. Cruguel, G. Patriarche, A. Ouerghi, M. Silly, B. Dubertret, E. Lhuillier, Wave -Function Engineering in HgSe/HgTe Colloidal Heterostructures To Enhance Mid -infrared Photoconductive Properties. Nano Lett. ...

    2018

  90. [98]

    M. E. Cryer, J. E. Halpert, 300 nm Spectral Resolution in the Mid -Infrared with Robust, High Responsivity Flexible Colloidal Quantum Dot Devices at Room Temperature. ACS Photonics. 5, 3009–3015 (2018)

    2018

  91. [99]

    Böberl, M

    M. Böberl, M. V. Kovalenko, S. Gamerith, E. J. W. List, W. He iss, Inkjet-Printed Nanocrystal Photodetectors Operating up to 3 μm Wavelengths. Adv. Mater. 19, 3574–3578 (2007)

    2007

  92. [100]

    J. P. Clifford, K. W. Johnston, L. Levina, E. H. Sargent, Schottky barriers to colloidal quantum dot films. Appl. Phys. Lett. 91, 253117 (2007)

    2007

  93. [101]

    J. M. Luther, M. Law, M. C. Beard, Q. Song, M. O. Reese, R. J. Ellingson, A. J. Nozik, Schottky Solar Cells Based on Colloidal Nanocrystal Films. Nano Lett. 8, 3488–3492 (2008)

    2008

  94. [102]

    Chang, R

    L.-Y. Chang, R. R. Lunt, P. R. Brown, V. Bulović, M. G. Bawendi, Low -Temperature Solution-Processed Solar Cells Based on PbS Colloidal Quantum Dot/CdS Heterojunctions. Nano Lett. 13, 994–999 (2013)

    2013

  95. [103]

    J. Tang, H. Liu, D. Zhitomirsky, S. Hoogland, X. Wang, M. Furukawa, L. Levina, E. H. Sargent, Quantum Junction Solar Cells. Nano Lett. 12, 4889–4894 (2012)

    2012

  96. [104]

    A. G. Pattantyus -Abraham, I. J. Kramer, A. R. Barkhouse, X. Wang, G. Konstantatos, R. Debnath, L. Levina, I. Raabe, M. K. Nazeeruddin, M. Grätzel, E. H. Sargent, Depleted - Heterojunction Colloidal Quantum Dot Solar Cells. ACS Nano. 4, 3374–3380 (2010)

    2010

  97. [105]

    M. Law, M. C. Beard, S. Choi, J. M. Luther, M. C. Hanna, A. J. Nozik, Determining the Internal Quantum Efficiency of PbSe Nanocrystal Solar Cells with the Aid of an Optical Model. Nano Lett. 8, 3904–3910 (2008)

    2008

  98. [106]

    J. Gao, J. M. Luther, O. E. Semonin, R. J. Ellingson, A. J. Nozik, M. C. Beard, Quantum Dot Size Dependent J−V Characteristics in Heterojunction ZnO/PbS Quantum Dot Solar Cells. Nano Lett. 11, 1002–1008 (2011)

    2011

  99. [107]

    K. S. Leschkies, T. J. Beatty, M. S. Kang, D. J. Norris, E. S. Aydil, Solar Cells Based on Junctions between Colloidal PbSe Nanocrystals and Thin ZnO Films. ACS Nano. 3, 3638–3648 (2009)

    2009

  100. [108]

    E. M. Sanehira, A. R. Marshall, J. A. Christians, S. P. Harvey , P. N. Ciesielski, L. M. Wheeler, P. Schulz, L. Y. Lin, M. C. Beard, J. M. Luther, Enhanced mobility CsPbI3 quantum dot arrays for record-efficiency, high-voltage photovoltaic cells. Sci. Adv. 3, 4204 (2017). Bibl...

    2017

  101. [109]

    B. Li, Y. Zhang, L. Fu, T. Yu, S. Zhou, L. Zhang, L. Yin, Surface passivation engineering strategy to fully -inorganic cubic CsPbI 3 perovskites for high -performance solar cells. Nat. Commun. 9, 1076 (2018)

    2018

  102. [110]

    M. A. Green, A. Ho -Baillie, H. J. Snaith, The emergence of perovskite solar cells. Nat. Photonics. 8, 506–514 (2014)

    2014

  103. [111]

    H. Chen, S. Xiang, W. Li, H. Liu, L. Zhu, S. Yang, Inorganic Perovskite Solar Cells: A Rapidly Growing Field. Sol. RRL. 2, 1700188 (2018)

    2018

  104. [112]

    E. H. Sargent, Solar Cells, Photodetectors, and Optical Sources from I nfrared Colloidal Quantum Dots. Adv. Mater. 20, 3958–3964 (2008)

    2008

  105. [113]

    O. E. Semonin, J. M. Luther, S. Choi, H. -Y. Chen, J. Gao, A. J. Nozik, M. C. Beard, Peak External Photocurrent Quantum Efficiency Exceeding 100% via MEG in a Quantum Dot Solar Cell. Science. 334, 1530–1533 (2011)

    2011

  106. [114]

    J. M. Pietryga, R. D. Schaller, D. Werder, M. H. Stewart, V. I. Klimov, J. A. Hollingsworth, Pushing the Band Gap Envelope: Mid-Infrared Emitting Colloidal PbSe Quantum Dots. J. Am. Chem. Soc. 126, 11752–11753 (2004)

    2004

  107. [115]

    Guyot -Sionnest, J

    P. Guyot -Sionnest, J. A. Roberts, Background limited mid -infrared photodetection with photovoltaic HgTe colloidal quantum dots. Appl. Phys. Lett. 107, 253104 (2015)

    2015

  108. [116]

    M. V. Kovalenko, M. Scheele, D. V. Talapin, Colloidal Nanocrystals with Molecul ar Metal Chalcogenide Surface Ligands. Science. 324, 1417–1420 (2009)

    2009

  109. [117]

    Z. Ning, H. Dong, Q. Zhang, O. Voznyy, E. H. Sargent, Solar Cells Based on Inks of n -Type Colloidal Quantum Dots. ACS Nano. 8, 10321–10327 (2014)

    2014

  110. [118]

    A. A. Bessonov, M. Allen, Y. Liu, S. Malik, J. Bottomley, A. Rushton, I. Medina -Salazar, M. Voutilainen, S. Kallioinen, A. Colli, C. Bower, P. Andrew, T. Ryhänen, Compound Quantum Dot–Perovskite Optical Absorbers on Graphene Enhancing Short -Wave Infrared Photodetection. ACS ...

    2017

  111. [119]

    Zhang, G

    Y. Zhang, G. Wu, C. Ding, F. Liu, Y. Yao, Y. Zhou, C. Wu, N. Nakazawa, Q. Huang, T. Toyoda, R. Wang, S. Hayase, Z. Zou, Q. Shen, Lead Selenide Colloidal Quantum Dot Solar Cells Achieving High Open -Circuit Voltage with One -Step De position Strategy. J. Phys. Chem. Lett., 3598...

    2018

  112. [120]

    M. Yuan, M. Liu, E. H. Sargent, Colloidal quantum dot solids for solution -processed solar cells. Nat. Energy. 1, 16016 (2016)

    2016

  113. [121]

    D. M. Balazs, N. Rizkia, H.-H. Fang, D. N. Dirin, J. Momand, B. J. Kooi, M. V. Kovalenko, M. A. Loi, Colloidal Quantum Dot Inks for Single -Step-Fabricated Field-Effect Transistors: The Importance of Postdeposition Ligand Removal. ACS Appl. Mater. Interface s. 10, 5626 –5632 (2018)

    2018

  114. [122]

    J. Kim, O. Ouellette, O. Voznyy, M. Wei, J. Choi, M. -J. Choi, J. W. Jo, S.-W. Baek, J. Fan, M. I. Saidaminov, B. Sun, P. Li, D. -H. Nam, S. Hoogland, Z. -H. Lu, F. P. G. de Arquer, E. H. Sargent, Butylamine-Catalyzed Synthesis of Nanocrystal Inks Enables Efficient Infrared CQ...

    2018

  115. [123]

    Jagtap, N

    A. Jagtap, N. Goubet, C. Livache, A. Chu, B. Martinez, C. Greboval, J. Qu, E. Dandeu, L. Becerra, N. Witkowski, S. Ithurria, F. Mathevet, M. G. Silly, B. Dub ertret, E. Lhuillier, Short Wave Infrared Devices Based on HgTe Nanocrystals with Air Stable Performances. J. Phys. Che...

    2018

  116. [124]

    Zhitomirsky, O

    D. Zhitomirsky, O. Voznyy, L. Levina, S. Hoogland, K. W. Kemp, A. H. Ip, S. M. Thon, E. H. Sargent, Engineering colloidal quantum dot solids within and beyond the mobility -invariant regime. Nat. Commun. 5, 3803 (2014)

    2014

  117. [125]

    Ghosh, L

    S. Ghosh, L. Manna, The Many “Facets” of Halide Ions in the Chemistry of Colloidal Inorganic Nanocrystals. Chem. Rev. 118, 7804–7864 (2018)

    2018

  118. [126]

    M. M. Ackerman, X. Tang, P. Guyot-Sionnest, Fast and Sensitive Colloidal Quantum Dot Mid- Wave Infrared Photodetectors. ACS Nano. 12, 7264–7271 (2018)

    2018

  119. [127]

    Fukuda, A

    T. Fukuda, A. Takahashi, K. Takahira, H. Wang, T. Kubo, H. Segawa, Limiting factor of performance for solution -phase ligand -exchanged PbS quantum dot solar cell. Sol. Energy Mater. Sol. Cells. 195, 220–227 (2019). Bibliographie 155

    2019

  120. [128]

    K. Qiao, Y. Cao, X. Yang, J. Khan, H. Deng, J. Zhang, U. Farooq, S. Yuan, H. Song, Efficient interface and bulk passiva tion of PbS quantum dot infrared photodetectors by PbI 2 incorporation. RSC Adv. 7, 52947–52954 (2017)

    2017

  121. [129]

    X. Tang, X. Tang, K. W. C. Lai, Scalable Fabrication of Infrared Detectors with Multispectral Photoresponse Based on Patterned Colloidal Quantum D ot Films. ACS Photonics . 3, 2396 – 2404 (2016)

    2016

  122. [130]

    X. Tang, M. M. Ackerman, M. Chen, P. Guyot -Sionnest, Dual -band infrared imaging using stacked colloidal quantum dot photodiodes. Nat. Photonics, 1 (2019)

    2019

  123. [131]

    Buurma, R

    C. Buurma, R. E. Pimpinella, A. J. Ciani, J . S. Feldman, C. H. Grein, P. Guyot -Sionnest, MWIR imaging with low cost colloidal quantum dot films. Opt. Sens. Imaging Photon Count. Nanostructured Devices Appl. 2016. 9933, 993303 (2016)

    2016

  124. [132]

    E. J. D. Klem, C. Gregory, D. Temple, J. Lewis, PbS colloid al quantum dot photodiodes for low-cost SWIR sensing. Proc. SPIE. 9451, 945104 (2015)

    2015

  125. [133]

    Rauch, M

    T. Rauch, M. Böberl, S. F. Tedde, J. Fürst, M. V. Kovalenko, G. Hesser, U. Lemmer, W. Heiss, O. Hayden, Near -infrared imaging with quantum -dot-sensitized organic p hotodiodes. Nat. Photonics. 3, 332–336 (2009)

    2009

  126. [134]

    Heves, C

    E. Heves, C. Ozturk, V. Ozguz, Y. Gurbuz, Solution -Based PbS Photodiodes, Integrable on ROIC, for SWIR Detector Applications. IEEE Electron Device Lett. 34, 662–664 (2013)

    2013

  127. [135]

    Georgitzikis, P

    E. Georgitzikis, P. E. Malinowski, L. M. Hagclsieb, V. Pejovic, G. Uytterhoeven, S. Guerrieri, A. Süss, C. Cavaco, K. Chatzinis, J. Maes, Z. Hens, P. Heremans, D. Cheyns, in 2018 IEEE SENSORS (2018), pp. 1–4

    2018

  128. [136]

    X. Tang, M. M. Ackerman, G. Shen, P. Guyo t‐Sionnest, Towards Infrared Electronic Eyes: Flexible Colloidal Quantum Dot Photovoltaic Detectors Enhanced by Resonant Cavity. Small. 15, 1804920 (2019)

    2019

  129. [137]

    X. Tang, M. M. Ackerman, P. Guyot -Sionnest, Thermal Imaging with Plasmon Resonance Enhanced Hg Te Colloidal Quantum Dot Photovoltaic Devices. ACS Nano . 12, 7362 –7370 (2018)

    2018

  130. [138]

    Livache, B

    C. Livache, B. Martinez, N. Goubet, C. Gréboval, J. Qu, A. Chu, S. Royer, S. Ithurria, M. G. Silly, B. Dubertret, E. Lhuillier, A colloidal quantum dot infrared photodetec tor and its use for intraband detection. Nat. Commun. 10, 2125 (2019)

    2019

  131. [139]

    S. B. Hafiz, M. R. Scimeca, P. Zhao, I. J. Paredes, A. Sahu, D.-K. Ko, Silver Selenide Colloidal Quantum Dots for Mid-Wavelength Infrared Photodetection. ACS Appl. Nano Mater. 2, 1631– 1636 (2019)

    2019

  132. [140]

    A. Sahu, A. Khare, D. D. Deng, D. J. Norris, Quantum confinement in silver selenide semiconductor nanocrystals. Chem. Commun. 48, 5458–5460 (2012). Bibliographie 156 Bibliographie 157 ÉTUDE DES PROPRIÉTÉS OPTOÉLECTRONIQUES DE NANOCRISTAUX COLLOÏDAUX À FAIBLE BANDE INTERDITE : ...

    2012

Pith tools

Reviewed August 14, 2026 · model on record in the stance chip above.