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Highly Mobile Carriers in a Candidate of Quasi-Two-Dimensional Topological Semimetal AuTe$_2$Br

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arxiv 1909.04296 v1 pith:RTOPIZPX submitted 2019-09-10 cond-mat.mtrl-sci cond-mat.other

Zeji Wang , Shuyu Cheng , Tay-Rong Chang , Wenlong Ma , Xitong Xu , Huibin Zhou , Guangqiang Wang , Xin Gui
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Haipeng Zhu Zhen Zhu Hao Zheng Jinfeng Jia Junfeng Wang Weiwei Xie Shuang Jia
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classification cond-mat.mtrl-scicond-mat.other
keywords highlytopologicalaute2brcandidatecarrierscompensatedmobilequasi-two-dimensional
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We report the crystal and electronic structures of a non-centrosymmetric quasi-two-dimensional (2D), candidate of topological semimetal AuTe2Br. The Fermi surface of this layered compound consists of 2D-like, topological trivial electron and non-trivial hole pockets which host a Dirac cone along the kz direction. Our transport measurements on the single crystals show highly anisotropic, compensated low-density electrons and holes, both of which exhibit ultrahigh mobility at a level of 10^5cm^2V^-1s^-1 at low temperature. The highly mobile, compensated carriers lead a non-saturated, parabolic magnetoresistance as large as 3*10^5 in single-crystalline AuTe2Br in a magnetic field up to 58 T.

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