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Colossal magnetoresistance in a nonsymmorphic antiferromagnetic insulator

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arxiv 2007.06556 v2 pith:NZRHZ6G6 submitted 2020-07-13 cond-mat.str-el

classification cond-mat.str-el
keywords antiferromagneticinsulatingstatecalculationsmagneticmagnetoresistancenonsymmorphicphase
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abstract

Here we investigate antiferromagnetic Eu$_{5}$In$_{2}$Sb$_{6}$, a nonsymmorphic Zintl phase. Our electrical transport data show that Eu$_{5}$In$_{2}$Sb$_{6}$ is remarkably insulating and exhibits an exceptionally large negative magnetoresistance, which is consistent with the presence of magnetic polarons. From {\it ab initio} calculations, the paramagnetic state of Eu$_{5}$In$_{2}$Sb$_{6}$ is a topologically nontrivial semimetal within the generalized gradient approximation (GGA), whereas an insulating state with trivial topological indices is obtained using a modified Becke-Johnson potential. Notably, GGA+U calculations suggest that the antiferromagnetic phase of Eu$_{5}$In$_{2}$Sb$_{6}$ may host an axion insulating state. Our results provide important feedback for theories of topological classification and highlight the potential of realizing clean magnetic narrow-gap semiconductors in Zintl materials.

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  1. SPLENDOR: a novel detector platform to search for light dark matter with narrow-gap semiconductors

    physics.ins-det 2025-07 conditional novelty 6.0 of 10

    A dark matter detector platform combining a 60 meV-gap semiconductor (Eu5In2Sb6) with cryogenic HEMT readout and daily modulation analysis is presented, with projected sensitivity to sub-MeV dark matter.

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