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Experimental observation of ABCB stacked tetralayer graphene

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arxiv 2203.07971 v2 pith:A5VG5FBF submitted 2022-03-15 cond-mat.mes-hall physics.optics

classification cond-mat.mes-hallphysics.optics
keywords abcbgraphenestackingtetralayerdomainsnear-fieldthreeflakes
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In tetralayer graphene, three inequivalent layer stackings should exist, however, only rhombohedral (ABCA) and Bernal (ABAB) stacking have so far been observed. The three stacking sequences differ in their electronic structure, with the elusive third stacking (ABCB) being unique as it is predicted to exhibit an intrinsic bandgap as well as locally flat bands around the K points. Here, we use scattering-type scanning near-field optical microscopy and confocal Raman microscopy to identify and characterize domains of ABCB stacked tetralayer graphene. We differentiate between the three stacking sequences by addressing characteristic interband contributions in the optical conductivity between 0.28 and 0.56 eV with amplitude and phase-resolved near-field nano-spectroscopy. By normalizing adjacent flakes to each other, we achieve good agreement between theory and experiment, allowing for the unambiguous assignment of ABCB domains in tetralayer graphene. These results establish near-field spectroscopy at the interband transitions as a semi-quantitative tool, enabling the recognition of ABCB domains in tetralyer graphene flakes and therefore, providing a basis to study correlation physics of this exciting phase.

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  1. Nanoscale infrared and microwave imaging of stacking faults in multilayer graphene

    cond-mat.mes-hall 2025-04 conditional novelty 6.0 of 10

    AFM-IR and sMIM can distinguish Bernal, rhombohedral, and intermediate stacking orders in multilayer graphene, including under a boron nitride coating.

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