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Ionization efficiency for nuclear recoils in silicon from sim 50 eV to 3 MeV
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Ionization efficiency for nuclear recoils in silicon from $\sim 50$ eV to $3$ MeV
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We present a model for the nuclear recoil ionization efficiency in silicon based on an extension of Lindhard's theory where atomic bond disruption is modeled as a function of the initial ion energy, the interatomic potential, and the average ion-vacancy production energy. A better description of the electronic stopping than the one assumed by Lindhard, the effect of electronic straggling, as well as charge screening and Coulomb repulsion effects of ions are also considered. The model describes the available data over nearly four orders of magnitude in nuclear recoil energy.
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