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Single laser pulse induced magnetization switching in in-plane magnetized GdCo alloys

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arxiv 2308.10516 v1 pith:GQMKXFXQ submitted 2023-08-21 cond-mat.mes-hall

classification cond-mat.mes-hall
keywords magnetizedswitchingmagnetizationpulsesingleao-hisconcentrationfilms
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The discovery of all-optical ultra-fast deterministic magnetization switching has opened up new possibilities for manipulating magnetization in devices using femtosecond laser pulses. Previous studies on single pulse all-optical helicity-independent switching (AO-HIS) have mainly focused on perpendicularly magnetized thin films. This work presents a comprehensive study on AO-HIS for in-plane magnetized GdxCo100-x thin films. Deterministic single femtosecond laser pulse toggle magnetization switching is demonstrated in a wider concentration range (x=10% to 25%) compared to the perpendicularly magnetized counterparts with GdCo thicknesses up to 30 nm. The switching time strongly depends on the GdxCo100-x concentration, with lower Gd concentration exhibiting shorter switching times (less than 500 fs). Our findings in this geometry provide insights into the underlying mechanisms governing single pulse AO-HIS, which challenge existing theoretical predictions. Moreover, in-plane magnetized GdxCo100-x thin films offer extended potential for opto-spintronic applications compared to their perpendicular magnetized counterparts.

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