Anomalous Hall Crystals in Rhombohedral Multilayer Graphene I: Interaction-Driven Chern Bands and Fractional Quantum Hall States at Zero Magnetic Field

Recent experiments on rhombohedral pentalayer graphene flakes with a substrate induced moir\'e potential have identified both Chern insulators and fractional Quantum Hall states in the absence of an applied magnetic field. Surprisingly, these states are observed in strong displacement fields where the effects of the moir\'e lattice are weak, and seem to be readily accessed without fine-tuning. To address these experimental puzzles we study an interacting model of electrons in this geometry, first within the self-consistent Hartree-Fock (SCHF) approximation. We find an isolated Chern band with Chern number $|C|=1$, that moreover is relatively flat and shows good quantum geometry. Exact diagonalization and density matrix renormalization group methods at fractional filling establish the presence of fractional quantum anomalous Hall (FQAH) states. The $|C|=1$ band in SCHF is remarkably robust to varying microscopic parameters, and is also found in the $N_L=4$ and $N_L=6$ layer systems. Remarkably, it appears stable even to switching off the moir\'e potential, pointing to spontaneous breaking of translation symmetry. We term this topological crystalline state the ``anomalous Hall crystal" (AHC), and argue that it constitutes a general mechanism for creating stable Chern bands in rhombohedral graphene. Our work elucidates the physics behind the recent rhombohedral pentalayer graphene observations, predicts the appearance of the same phase in other systems, and opens the door to studying the interplay between electronic topology and spontaneous translation symmetry breaking.