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Stress and Alignment Response to Curved Obstacles in Growing Bacterial Monolayers

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arxiv 2401.17222 v1 pith:ZQX3OVPG submitted 2024-01-30 cond-mat.soft

classification cond-mat.soft
keywords alignmentbacterialchannellaminarobstaclesdisruptionsgrowingmonolayers
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Monolayers of growing bacteria, confined within channel geometries, exhibit self-organization into a highly aligned laminar state along the axis of the channel. Although this phenomenon has been observed in experiments and simulations under various boundary conditions, the underlying physical mechanism driving this alignment remains unclear. In this study, we conduct simulations of growing bacteria in 2D channel geometries perturbed by fixed obstacles, either circular or arc-shaped, placed at the channel's center. Our findings reveal that even sizable obstacles cause only short-ranged disruptions to the baseline laminar state. These disruptions arise from a competition between local planar anchoring and bulk laminar alignment. At smaller obstacle sizes, bulk alignment fully dominates, while at larger sizes, planar anchoring induces increasing local disruptions. Furthermore, our analysis indicates that the resulting configurations of the bacterial system display a striking resemblance to the arrangement of hard-rod smectic liquid crystals around circular obstacles. This suggests that modeling hard-rod bacterial monolayers as smectic, rather than nematic, liquid crystals may yield successful outcomes. The insights gained from our study contribute to the expanding body of research on bacterial growth in channels. Our work provides new perspectives on the stability of the laminar state and extends our understanding to encompass more intricate confinement schemes.

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  1. Prediction and control of geometry-induced nematic order in growing multicellular systems

    cond-mat.soft 2025-06 conditional novelty 6.0 of 10

    Orientation patterns in growing rod colonies follow the shear rate of an isotropic expansion flow, and n-sided polygonal boundaries are predicted to produce a total topological defect charge of 1 - n/2.

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