Quantum transport signature of strain-induced scalar and pseudo-vector potentials in a crenellated hBN-graphene heterostructure

The sharp Dirac cone of the electronic dispersion confers to graphene a remarkable sensitivity to strain. It is usually encoded in scalar and pseudo-vector potentials, induced by the modification of hopping parameters, which have given rise to new phenomena at the nanoscale such as giant pseudomagnetic fields and valley polarization. Here, we unveil the effect of these potentials on the quantum transport across a succession of strain-induced barriers. We use high-mobility, hBN-encapsulated graphene, transferred over a large (10x10 $\mu$m$^{2}$) crenellated hBN substrate. We show the emergence of a broad resistance ancillary peak at positive energy that arises from Klein tunneling barriers induced by the tensile strain at the trench edges. Our theoretical study, in quantitative agreement with experiment, highlights the balanced contributions of strain-induced scalar and pseudo-vector potentials on ballistic transport. Our results establish crenellated van der Waals heterostructures as a promising platform for strain engineering in view of applications and basic physics.