pith. sign in

arxiv: 2407.02196 · v1 · submitted 2024-07-02 · ❄️ cond-mat.mes-hall · physics.optics

Low-Threshold Surface-Emitting Whispering-Gallery Mode Microlasers

Andrey Babichev , Ivan Makhov , Natalia Kryzhanovskaya , Sergey Troshkov , Yuriy Zadiranov , Yulia Salii , Marina Kulagina , Mikhail Bobrov
show 6 more authors
Alexey Vasilev Sergey Blokhin Nikolay Maleev Leonid Karachinsky Innokenty Novikov Anton Egorov
This is my paper

Pith reviewed 2026-05-23 23:08 UTC · model grok-4.3

classification ❄️ cond-mat.mes-hall physics.optics
keywords whispering gallery modesmicropillarssurface-emitting lasersGaAsdistributed Bragg reflectorslow thresholdsingle-mode lasingcomb-like spectrum
0
0 comments X

The pith

Micropillars achieve low-threshold whispering-gallery mode lasing with axial surface emission.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper establishes that micropillars incorporating low-absorbing Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors and smooth sidewalls can support lasing on whispering-gallery modes when excitation and collection occur along the pillar axis. This axial geometry produces simultaneous multi-mode lasing with a comb-like spectrum across 930-970 nm for pillar diameters from 3 to 7 micrometers. Raising temperature to 130 K converts the output to single-mode operation in 5-micrometer pillars, yielding a cold-cavity quality factor near 8000 and an estimated threshold of 240 microwatts. A sympathetic reader would care because the approach removes the requirement for side collection, which could simplify integration of such lasers into planar photonic systems.

Core claim

The authors establish that high-quality micropillars can achieve lasing on whispering-gallery modes through axial excitation and collection, enabled by low-absorbing Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors and smooth sidewalls. This configuration yields simultaneous multi-mode lasing with a comb-like structure between 930 and 970 nm for pillar diameters of 3 to 7 micrometers. At elevated temperatures of 130 K, 5-micrometer pillars exhibit single-mode lasing with a cold-cavity quality factor near 8000 and an estimated threshold excitation power of 240 microwatts.

What carries the argument

Micropillar resonators with low-absorbing AlGaAs distributed Bragg reflectors and smooth sidewalls that permit axial excitation and collection of whispering-gallery modes.

If this is right

  • Simultaneous multi-mode lasing with comb-like spectra occurs across 930-970 nm for 3-7 micrometer pillar diameters.
  • Single-mode lasing emerges at temperatures up to 130 K in 5 micrometer pillars.
  • Cold-cavity quality factors reach about 8000 with estimated excitation thresholds of 240 microwatts.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • Axial collection may simplify fabrication of dense arrays by eliminating side-emission optics.
  • The shift from multi-mode to single-mode behavior with temperature offers a route to thermally controlled spectral output.
  • Varying DBR layer compositions could test whether residual absorption currently limits operation above 130 K.

Load-bearing premise

Low-absorbing DBRs together with smooth pillar sidewalls keep scattering and absorption losses low enough for axial whispering-gallery mode lasing to occur.

What would settle it

Absence of comb-like lasing spectra in the 930-970 nm range or thresholds well above 240 microwatts under axial excitation in 3-7 micrometer pillars would falsify the claim.

Figures

Figures reproduced from arXiv: 2407.02196 by Alexey Vasilev, Andrey Babichev, Anton Egorov, Innokenty Novikov, Ivan Makhov, Leonid Karachinsky, Marina Kulagina, Mikhail Bobrov, Natalia Kryzhanovskaya, Nikolay Maleev, Sergey Blokhin, Sergey Troshkov, Yulia Salii, Yuriy Zadiranov.

Figure 1
Figure 1. Figure 1: Optical field intensity versus distance from the substrate. The inset demonstrates the scanning electron microscope image of micropillar. emission in the pillar axis direction. Due to the high mirror loss for the axial modes and the smooth sidewalls obtained with the optimized dry etching process, the low-threshold (as low as 180 μW optical excitation power) WGMs lasing in the 930–970 nm spectral range was… view at source ↗
Figure 2
Figure 2. Figure 2: PL spectra (semi logarithmic scale) measured at 77 K temperature. Left part demonstrates results for 2 μm (top panel), 3 μm (middle panel) and 4 μm (bottom panel). Right part demonstrates results for 5 μm (top panel), 6 μm (middle panel) and 7 μm (bottom panel). The spectra are measured at excitation power 4.3 μW, 43 μW, 0.43 mW, 2.1 mW, 4.5 mW and 11.6 mW, respectively for 7 μm pillar. The excitation powe… view at source ↗
Figure 3
Figure 3. Figure 3: Free spectral range versus inverse pillar diameter. The inset demonstrates enlarged spectrum for 7 μm pillar measured at 11.6 mW excitation power [PITH_FULL_IMAGE:figures/full_fig_p003_3.png] view at source ↗
Figure 4
Figure 4. Figure 4: The input-output measurement measured at 77 K for 2 μm pillar (top panel, left Y axis) and 5 μm pillar (bottom panel, left Y axis). The spectral linewidth (the Gaussian fit) values are presented on right Y axis. measured at 77 K. As a result, the evaluated threshold excitation power is about 180 μW for 2 μm pillar that coincides to empty Q￾factor of about 5000. By the same approach one can estimate the thr… view at source ↗
Figure 5
Figure 5. Figure 5: PL spectra (semi logarithmic scale) for 5 μm pillar measured at 130 K temperature (top panel). The spectra are measured at excitation power 0.22 mW, 0.33 mW, 0.42 mW, 0.61 mW, 1.1 mW and 2.8 mW, respectively. Arrow demonstrates the lasing line (close to 953 nm); The input￾output curve (953 nm line) measured at 130 K for 5 μm pillar (bottom panel, left Y axis). The spectral linewidth (the Gaussian fit) valu… view at source ↗
Figure 6
Figure 6. Figure 6: Mode energy shift as a function of excitation power for 2 μm and 5 μm pillars. demonstrated at cryogenic temperatures (at 4 K–14 K [14, 15, 16, 21, 24]. Moreover, surface-emitting WGMs lasing was realized just through the structure sidewalls resulted in the threshold excitation power about 100 mW [15]. Herein, the surface￾emitting lasing with excitation through top mirror was realized with 240 μW threshold… view at source ↗
read the original abstract

We report on microlasers based on high-quality micropillars with lasing on whispering-gallery modes. Usage of low-absorbing Al$\scriptsize 0.2$Ga$\scriptsize 0.8$As\Al$\scriptsize 0.9$Ga$\scriptsize 0.1$As distributed Bragg reflectors as well as the smooth pillar sidewalls allows us to realize whispering-gallery modes lasing by excitation and collection of emission in the pillar axis direction. As a result, simultaneous whispering gallery modes lasing (comb-like structure) in the wavelength range of 930-970 nm is observed for 3-7 $\mu$m pillar diameters. Increase the temperature up to 130 K results single-mode lasing for 5 $\mu$m pillars with about 8000 cold cavity quality-factor and 240 $\mu$W estimated threshold excitation power.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

3 major / 2 minor

Summary. The manuscript reports experimental realization of surface-emitting microlasers based on 3-7 μm diameter micropillars incorporating low-absorption Al0.2Ga0.8As/Al0.9Ga0.1As DBRs and smooth sidewalls. Axial excitation and collection enable simultaneous multi-mode whispering-gallery-mode (WGM) lasing with a comb-like spectrum in the 930-970 nm range; at 130 K, 5 μm pillars exhibit single-mode operation with cold-cavity Q ≈ 8000 and estimated threshold excitation power of 240 μW.

Significance. If substantiated, the result would demonstrate that standard low-absorption DBRs plus smooth sidewalls suffice for low-loss axial access to WGMs, offering a route to surface-emitting WGM microlasers without requiring specialized high-reflectivity designs. The concrete numbers (Q, threshold, temperature range) provide falsifiable benchmarks, but the work contains no machine-checked elements or parameter-free predictions.

major comments (3)
  1. [Sample structure and DBR design (Methods/Results)] The manuscript contains no transfer-matrix calculations, angle-dependent reflectivity spectra, or stopband simulations for the Al0.2Ga0.8As/Al0.9Ga0.1As DBRs at the oblique incidence angles (θ ≈ arcsin(n_eff/n)) required by WGMs in 3-7 μm pillars. This directly undermines the central claim that the DBRs plus smooth sidewalls enable low-loss axial WGM excitation/collection in the 930-970 nm window.
  2. [Lasing characteristics and threshold estimation (Results)] The abstract states an estimated threshold of 240 μW and Q ≈ 8000 for the 5 μm pillar at 130 K, yet the results section provides neither the raw input-output curves, the fitting procedure used to extract the threshold, nor error analysis or linewidth data supporting the Q value. These omissions are load-bearing for the “low-threshold” performance claim.
  3. [Spectral characterization (Results)] No raw spectra, mode-spacing analysis, or polarization data are shown to confirm that the observed 930-970 nm comb corresponds to azimuthal WGMs rather than other cavity modes; without this, the identification of “whispering-gallery mode lasing” rests on assertion alone.
minor comments (2)
  1. [Abstract and figure captions] Figure captions and text use inconsistent notation for the DBR layers (plain subscripts vs. scriptsize); standardize throughout.
  2. [Temperature-dependent measurements (Results)] The temperature dependence is reported only up to 130 K; clarify whether higher temperatures were attempted and why single-mode operation ceases above this value.

Simulated Author's Rebuttal

3 responses · 0 unresolved

We thank the referee for their careful reading and constructive comments, which help clarify the presentation of our experimental results on surface-emitting WGM microlasers. We address each major comment below.

read point-by-point responses

  1. Referee: [Sample structure and DBR design (Methods/Results)] The manuscript contains no transfer-matrix calculations, angle-dependent reflectivity spectra, or stopband simulations for the Al0.2Ga0.8As/Al0.9Ga0.1As DBRs at the oblique incidence angles (θ ≈ arcsin(n_eff/n)) required by WGMs in 3-7 μm pillars. This directly undermines the central claim that the DBRs plus smooth sidewalls enable low-loss axial WGM excitation/collection in the 930-970 nm window.

    Authors: We agree that the manuscript would benefit from explicit verification of DBR performance at the relevant oblique angles. In the revised manuscript we will include transfer-matrix calculations and angle-dependent reflectivity spectra for θ ≈ arcsin(n_eff/n) corresponding to the 3–7 μm pillar diameters, confirming that the stopband remains effective across 930–970 nm. revision: yes

  2. Referee: [Lasing characteristics and threshold estimation (Results)] The abstract states an estimated threshold of 240 μW and Q ≈ 8000 for the 5 μm pillar at 130 K, yet the results section provides neither the raw input-output curves, the fitting procedure used to extract the threshold, nor error analysis or linewidth data supporting the Q value. These omissions are load-bearing for the “low-threshold” performance claim.

    Authors: The raw input-output data and linewidth measurements exist in our experimental records. We will add the curves, describe the linear-fit procedure used to extract the 240 μW threshold, include error bars, and show the linewidth narrowing that supports the cold-cavity Q ≈ 8000 value. revision: yes

  3. Referee: [Spectral characterization (Results)] No raw spectra, mode-spacing analysis, or polarization data are shown to confirm that the observed 930-970 nm comb corresponds to azimuthal WGMs rather than other cavity modes; without this, the identification of “whispering-gallery mode lasing” rests on assertion alone.

    Authors: We will include representative raw spectra, perform azimuthal mode-spacing analysis (Δλ ≈ λ² / (2π n_eff R)) to match the observed comb for the given diameters, and add polarization-resolved data where recorded to confirm the expected TE character of the WGMs. revision: yes

Circularity Check

0 steps flagged

Purely experimental report; no derivations or fitted predictions present

full rationale

The manuscript is an experimental report of observed lasing spectra, quality factors, and thresholds in fabricated micropillars. No equations, models, parameter fits, or predictions are claimed. Central claims rest on direct optical measurements rather than any construction that reduces to inputs by definition or self-citation. No load-bearing steps match the enumerated circularity patterns.

Axiom & Free-Parameter Ledger

0 free parameters · 0 axioms · 0 invented entities

This is an experimental device demonstration paper; no free parameters, mathematical axioms, or new postulated entities are introduced.

pith-pipeline@v0.9.0 · 5743 in / 1181 out tokens · 21571 ms · 2026-05-23T23:08:02.894373+00:00 · methodology

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.

Reference graph

Works this paper leans on

31 extracted references · 31 canonical work pages

  1. [1]

    Whispering-gallery mode microdisk lasers,

    S. L. McCall, A. F. J. Levi, R. E. Slusher, S. J. Pearton, and R. A. Logan, “Whispering-gallery mode microdisk lasers,” Appl. Phys. Lett. , vol. 60, no. 3, pp. 289–291, Jan. 1992, doi: 10.1063/1.106688

    work page doi:10.1063/1.106688 1992

  2. [2]

    Ultrasmall and ultralow threshold GaInAsP-InP microdisk injection lasers: design, fabrication, lasing characteristics, and spontaneous emission factor,

    M. Fujita, A. Sakai, and T. Baba, “Ultrasmall and ultralow threshold GaInAsP-InP microdisk injection lasers: design, fabrication, lasing characteristics, and spontaneous emission factor,” IEEE J. Sel. Top. Quantum Electron. , vol. 5, no. 3, pp. 673 –681, May -Jun. 1999, doi: 10.1109/2944.788434

    work page doi:10.1109/2944.788434 1999

  3. [3]

    Continuous room -temperature operation of optically pumped InGaAs/InGaAsP microdisk lasers,

    S. M. K. Thiyagarajan, A. F. J. Levi, C. K. Lin, I. Kim, P. D. Dapkus, and S. J. Pearton, “Continuous room -temperature operation of optically pumped InGaAs/InGaAsP microdisk lasers,” Electron. Lett., vol. 34, no. 24, pp. 2333–2334, Nov. 1998, doi: 10.1049/el:19981639

    work page doi:10.1049/el:19981639 1998

  4. [4]

    High-Q wet-etched GaAs microdisks containing InAs quantum boxes,

    B. Gayral, J. M. Gérard, A. Lema ı̂tre, C. Dupuis, L. Manin, and J. L. Pelouard, “High-Q wet-etched GaAs microdisks containing InAs quantum boxes,” Appl. Phys. Lett., vol. 75, no. 13, pp. 1908 –1910, Sep. 1999, doi: 10.1063/1.124894

    work page doi:10.1063/1.124894 1908

  5. [5]

    Optical loss in microdisk lasers with dense quantum dot arrays,

    A. E. Zhukov et al., “Optical loss in microdisk lasers with dense quantum dot arrays,” IEEE J. Quantum Electron. , vol. 59, no. 1, pp. 1 –8, Feb. 2023, doi: 10.1109/jqe.2022.3229300

    work page doi:10.1109/jqe.2022.3229300 2023

  6. [6]

    Directional single -mode emission from ingaas/gaas quantum-dot half-disk microlasers,

    F. I. Zubov et al., “Directional single -mode emission from ingaas/gaas quantum-dot half-disk microlasers,” IEEE Photonics Technol. Lett. , vol. 34, no. 24, pp. 1349–1352, Dec. 2022, doi: 10.1109/lpt.2022.3216738

    work page doi:10.1109/lpt.2022.3216738 2022

  7. [7]

    Single -mode ultraviolet whispering gallery mode lasing from a floating GaN microdisk,

    G. Zhu et al., “Single -mode ultraviolet whispering gallery mode lasing from a floating GaN microdisk,” Opt. Lett., vol. 43, no. 4, pp. 647 –650, Feb. 2018, doi: 10.1364/ol.43.000647

    work page doi:10.1364/ol.43.000647 2018

  8. [8]

    Lasing characteristics of InAs quantum-dot microdisk from 3K to room temperature,

    T. Ide, T. Baba, J. Tatebayashi, S. Iwamoto, T. Nakaoka, and Y. Arakawa, “Lasing characteristics of InAs quantum-dot microdisk from 3K to room temperature,” Appl. Phys. Lett. , vol. 85, no. 8, pp. 1326 –1328, Aug. 2004, doi: 10.1063/1.1787157

    work page doi:10.1063/1.1787157 2004

  9. [9]

    Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes,

    M. Munsch et al., “Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes,” Appl. Phys. Lett., vol. 100, no. 3, Art. No. 031111, Jan. 2012, doi: 10.1063/1.3678031

    work page doi:10.1063/1.3678031 2012

  10. [10]

    Silicon integrated terahertz quantum cascade ring laser frequency comb,

    M. Jaidl et al., “Silicon integrated terahertz quantum cascade ring laser frequency comb,” Appl. Phys. Lett., vol. 120, no. 9, Art. No. 091106, Feb. 2022, doi: 10.1063/5.0078749

    work page doi:10.1063/5.0078749 2022

  11. [11]

    Gupta, Neereja Sundaresan, Thomas Alexander, Christopher J

    M. Piccardo et al., “Frequency combs induced by phase turbulence,” Nature, vol. 582, no. 7812, pp. 360 –364, Jun. 2020, doi: 10.1038/s41586- 020-2386-6

    work page doi:10.1038/s41586- 2020

  12. [12]

    Single -mode lasing in ring -cavity surface -emitting lasers,

    A. Babichev et al., “Single -mode lasing in ring -cavity surface -emitting lasers,” J. Opt. Technol. , vol. 90, no. 8, pp. 422 –427, Aug. 2023, doi: 10.1364/jot.90.000422

    work page doi:10.1364/jot.90.000422 2023

  13. [13]

    Quantum dot micropillar lasers,

    C. Gies and S. Reitzenstein, “Quantum dot micropillar lasers,” Semicond. Sci. Technol. , vol. 34, no. 7, Art. No. 073001, Jun. 2019, doi: 10.1088/1361-6641/ab1551

    work page doi:10.1088/1361-6641/ab1551 2019

  14. [14]

    Whispering gallery resonances in semiconductor micropillars,

    V. N. Astratov et al., “Whispering gallery resonances in semiconductor micropillars,” Appl. Phys. Lett. , vol. 91, no. 7, Art. No. 071115, Aug. 2007, doi: 10.1063/1.2771373

    work page doi:10.1063/1.2771373 2007

  15. [15]

    High Q whispering gallery modes in GaAs/AlAs pillar microcavities,

    Y.-R. Nowicki -Bringuier et al., “High Q whispering gallery modes in GaAs/AlAs pillar microcavities,” Opt. Express , vol. 15, no. 25, pp. 17291–17304, Nov. 2007, doi: 10.1364/oe.15.017291

    work page doi:10.1364/oe.15.017291 2007

  16. [16]

    Whispering gallery mode lasing in high quality GaAs/AlAs pillar microcavities,

    P. Jaffrennou et al., “Whispering gallery mode lasing in high quality GaAs/AlAs pillar microcavities,” Appl. Phys. Lett. , vol. 96, no. 7, Art. No. 071103, Feb. 2010, doi: 10.1063/1.3315869

    work page doi:10.1063/1.3315869 2010

  17. [17]

    Fabrication of dense diameter -tuned quantum dot micropillar arrays for applications in photonic information processing,

    T. Heuser, J. Große, A. Kaganskiy, D. Brunner, and S. Reitzenstein, “Fabrication of dense diameter -tuned quantum dot micropillar arrays for applications in photonic information processing,” APL Photonics, vol. 3, no. 11, Art. No. 116103, Sep. 2018, doi: 10.1063/1.5050669

    work page doi:10.1063/1.5050669 2018

  18. [18]

    Low -threshold lasing of optically pumped micropillar lasers with Al 0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors,

    C.-W. Shih et al., “Low -threshold lasing of optically pumped micropillar lasers with Al 0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors,” Appl. Phys. Lett. , vol. 122, no. 15, Art. No. 151111, Apr. 2023, doi: 10.1063/5.0143236

    work page doi:10.1063/5.0143236 2023

  19. [19]

    Development of highly homogenous quantum dot micropillar arrays for optical reservoir computing,

    T. Heuser, J. Grose, S. Holzinger, M. M. Sommer, and S. Reitzenstein, “Development of highly homogenous quantum dot micropillar arrays for optical reservoir computing,” IEEE J. Sel. Top. Quantum Electron. , vol. 26, no. 1, pp. 1–9, Jan. 2020, doi: 10.1109/jstqe.2019.2925968

    work page doi:10.1109/jstqe.2019.2925968 2020

  20. [20]

    Optical pumping of quantum dot micropillar lasers,

    L. Andreoli et al., “Optical pumping of quantum dot micropillar lasers,” Opt. Express , vol. 29, no. 6, pp. 9084 –9097, Mar. 2021, doi: 10.1364/oe.417063

    work page doi:10.1364/oe.417063 2021

  21. [21]

    Splitting and lasing of whispering gallery modes in quantum dot micropillars,

    B. D. Jones et al., “Splitting and lasing of whispering gallery modes in quantum dot micropillars,” Opt. Express , vol. 18, no. 21, pp. 22578 – 22592, Oct. 2010, doi: 10.1364/oe.18.022578

    work page doi:10.1364/oe.18.022578 2010

  22. [22]

    Splitting and lasing of whispering gallery modes in quantum dot micropillars,

    B. D. Jones et al., “Splitting and lasing of whispering gallery modes in quantum dot micropillars,” in Proc. CLEO:2011 - Laser Applications to Photonic Applications, Baltimore, MD, USA, 2011, Art. No. QWH7, doi: 10.1364/qels.2011.qwh7

    work page doi:10.1364/qels.2011.qwh7 2011

  23. [23]

    Observation of whispering gallery resonances in circular and elliptical semiconductor pillar microcavities,

    V. N. Astratov et al., “Observation of whispering gallery resonances in circular and elliptical semiconductor pillar microcavities,” PIERS Online, vol. 3, no. 3, pp. 311–314, 2007, doi: 10.2529/piers061007124736

    work page doi:10.2529/piers061007124736 2007

  24. [24]

    Whispering gallery mode lasing in electrically driven quantum dot micropillars,

    F. Albert et al., “Whispering gallery mode lasing in electrically driven quantum dot micropillars,” Appl. Phys. Lett ., vol. 97, no. 10, Art. No. 101108, Sep. 2010, doi: 10.1063/1.3488807

    work page doi:10.1063/1.3488807 2010

  25. [25]

    Spin‐ lasing in bimodal quantum dot micropillar cavities,

    N. Heermeier et al., “Spin‐ lasing in bimodal quantum dot micropillar cavities,” Laser Photonics Rev. , vol. 16, no. 4, Art. No. 2100585, Feb. 2022, doi: 10.1002/lpor.202100585

    work page doi:10.1002/lpor.202100585 2022

  26. [26]

    Coherence properties of high -β elliptical semiconductor micropillar lasers,

    S. Ates, S. M. Ulrich, P. Michler, S. Reitzenstein, A. Löffler, and A. Forchel, “Coherence properties of high -β elliptical semiconductor micropillar lasers,” Appl. Phys. Lett ., vol. 90, no. 16, Art. No. 161111, Apr. 2007, doi: 10.1063/1.2724908

    work page doi:10.1063/1.2724908 2007

  27. [27]

    High Q modes in elliptical microcavity pillars,

    D. M. Whittaker et al., “High Q modes in elliptical microcavity pillars,” Appl. Phys. Lett ., vol. 90, no. 16, Art. No. 161105, Apr. 2007, doi: 10.1063/1.2722683

    work page doi:10.1063/1.2722683 2007

  28. [28]

    Analysis of semiconductor microcavity lasers using rate equations,

    G. Bjork and Y. Yamamoto, “Analysis of semiconductor microcavity lasers using rate equations,” IEEE J. Quantum Electron. , vol. 27, no. 11, pp. 2386–2396, Nov. 1991, doi: 10.1109/3.100877

    work page doi:10.1109/3.100877 1991

  29. [29]

    High-β lasing in photonic-defect semiconductor-dielectric hybrid microresonators with embedded InGaAs quantum dots,

    K. Gaur et al., “High-β lasing in photonic-defect semiconductor-dielectric hybrid microresonators with embedded InGaAs quantum dots,” Appl. Phys. Lett ., vol. 124, no. 4, Art. No. 041104, Jan. 2024, doi: 10.1063/5.0177393

    work page doi:10.1063/5.0177393 2024

  30. [30]

    Quantum fluctuations and lineshape anomaly in a high ‐β silver‐coated InP‐based metallic nanolaser ,

    A. Koulas‐Simos et al., “Quantum fluctuations and lineshape anomaly in a high ‐β silver‐coated InP‐based metallic nanolaser ,” Laser Photonics Rev., vol. 16, no. 9, Art. No. 2200086, Jul. 2022, doi: 10.1002/lpor.202200086

    work page doi:10.1002/lpor.202200086 2022

  31. [31]

    (2023, Apr

    AIP Publishing. (2023, Apr. 10), Supplementary material: Low-threshold lasing of optically pumped micropillar lasers with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors [Online]. Available: https://pubs.aip.org/apl/article- supplement/2882214/zip/151111_1_5.0143236.suppl_material/ (accessed on 27 May 2024). 7 Andrey Babichev received the Ph.D. deg...

    work page arXiv 2023