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Pulsed Electroluminescence in a Dopant-free Gateable Semiconductor

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arxiv 2407.12714 v2 pith:2OZ23V4M submitted 2024-07-17 cond-mat.mes-hall

S. R. Harrigan , F. Sfigakis , L. Tian , N. Sherlekar , B. Cunard , M. C. Tam , H.-S. Kim , Z. Wasilewski
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M. E. Reimer J. Baugh
This is my paper · ORCID
classification cond-mat.mes-hall
keywords electroluminescencepulseddopant-freeeffectemissionsemiconductorstableactive
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We report on a stable form of pulsed electroluminescence in a dopant-free direct bandgap semiconductor heterostructure which we coin the tidal effect. Swapping an inducing gate voltage in an ambipolar field effect transistor allows incoming and outgoing carriers of opposite charge to meet and recombine radiatively. We develop a model to explain the carrier dynamics that underpins the frequency response of the pulsed electroluminescence intensity. Higher mobilities enable larger active emission areas than previous reports, as well as stable emission over long timescales.

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