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Adsorption-controlled Growth of Homoepitaxial c-plane Sapphire Films

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arxiv 2407.17194 v1 pith:V7ERD7VY submitted 2024-07-24 cond-mat.mtrl-sci

Lena N. Majer , Tolga Acartürk , Peter A. van Aken , Wolfgang Braun , Luca Camuti , Johan Eckl-Haese , Jochen Mannhart , Takeyoshi Onuma
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Ksenia S. Rabinovich Darrell G. Schlom Sander Smink Ulrich Starke Jacob Steele Patrick Vogt Hongguang Wang Felix V.E. Hensling
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classification cond-mat.mtrl-sci
keywords filmssapphireadsorption-controlledc-planegrowthhomoepitaxialappliedatomically
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Sapphire is a technologically highly relevant material, but it poses many challenges to performing epitaxial thin-film deposition. We have identified and applied the conditions for adsorption-controlled homoepitaxial growth of c-plane sapphire. The films thus grown are atomically smooth, have a controlled termination, and are of outstanding crystallinity. Their chemical purity exceeds that of the substrates. The films exhibit exceptional optical properties such as a single-crystal-like bandgap and a low density of F+ centers.

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