Typed states for the displayed outbound observations.
Source: paper_references, paper_reference_links, observed 2026-08-12T16:30:30.385209Z
Paper Citation Record · LEDGER
Taylor Modeling and Comparative Research Containing Aspect-Ratio Dependent Optimization of Three-Dimensional Hk Superjunction MOSFETs
As of 13 August 2026, this Paper Citation Record lists 14 of 14 outbound references and 0 inbound Pith citation observations for arXiv:2411.13448.
A citation records a reference. It does not transfer a finding from one paper to another.
Coverage vector
One-hop event checks from named stored sources.
Source: scholarly_work_events, retraction_status_cache, observed 2026-08-13T06:32:02.005865+00:00
Pith citing papers itemized under the disclosed page cap.
Source: paper_references, paper_reference_links
A source-named dated measurement, never combined with another source.
Source: cited_works
Reference resolution
14 of 14 outbound references displayed
- verified exact0
- verified fuzzy14
- unresolved0
- parse uncertain0
- malformed identifier0
- metadata mismatch0
External citation measurements
No source-named external measurement is stored.
Outbound references
Observation e36c1097-d566-42cc-beaf-27ea212d6a28 · outbound
This paper cites Optimization of the specific on-resistance of the coolmos/sup tm/,.
Taylor Modeling and Comparative Research Containing Aspect-Ratio Dependent Optimization of Three-Dimensional Hk Superjunction MOSFETs Optimization of the specific on-resistance of the coolmos/sup tm/,
Reference 1
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T16:30:30.736689Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.
Observation 7e137a5f-9758-425b-a5bb-2cf3f6f41453 · outbound
This paper cites Optimization of the porous-silicon-based super- junction power mosfet,.
Taylor Modeling and Comparative Research Containing Aspect-Ratio Dependent Optimization of Three-Dimensional Hk Superjunction MOSFETs Optimization of the porous-silicon-based super- junction power mosfet,
Reference 2
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T16:30:30.715581Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.
Observation ab4429b4-ffbb-4412-9267-0f44ebbf6495 · outbound
This paper cites Optimal on-resistance versus breakdown voltage tradeoff in superjunction power devices: a novel analytical model,.
Taylor Modeling and Comparative Research Containing Aspect-Ratio Dependent Optimization of Three-Dimensional Hk Superjunction MOSFETs Optimal on-resistance versus breakdown voltage tradeoff in superjunction power devices: a novel analytical model,
Reference 3
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T16:30:30.695851Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.
Observation e5da7dc1-68ad-402f-befe-e9d3680299b8 · outbound
This paper cites Theory of a novel voltage-sustaining layer for power devices,.
Taylor Modeling and Comparative Research Containing Aspect-Ratio Dependent Optimization of Three-Dimensional Hk Superjunction MOSFETs Theory of a novel voltage-sustaining layer for power devices,
Reference 4
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T16:30:30.673311Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.
Observation bdd5bf78-5641-4e09-a833-41e4e2da888a · outbound
This paper cites New “silicon limit.
Taylor Modeling and Comparative Research Containing Aspect-Ratio Dependent Optimization of Three-Dimensional Hk Superjunction MOSFETs New “silicon limit
Reference 5
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T16:30:30.653712Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.
Observation 31c36b32-a87e-423a-ba40-4939688c672a · outbound
This paper cites Optimization and comparison of specific on-resistance for superjunction mosfets considering three-dimensional and insulator-pillar concepts,.
Taylor Modeling and Comparative Research Containing Aspect-Ratio Dependent Optimization of Three-Dimensional Hk Superjunction MOSFETs Optimization and comparison of specific on-resistance for superjunction mosfets considering three-dimensional and insulator-pillar concepts,
Reference 6
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T16:30:30.631025Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.
Observation 5a1d521b-52ed-423b-9541-37b1d88f3ee7 · outbound
This paper cites Theory of 3-d superjunction mosfet,.
Taylor Modeling and Comparative Research Containing Aspect-Ratio Dependent Optimization of Three-Dimensional Hk Superjunction MOSFETs Theory of 3-d superjunction mosfet,
Reference 7
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T16:30:30.605586Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.
Observation 40ee8a2f-132b-45c1-8166-7d04d3f3f60a · outbound
This paper cites The minimum specific on-resistance of 3-d superjunction devices,.
Taylor Modeling and Comparative Research Containing Aspect-Ratio Dependent Optimization of Three-Dimensional Hk Superjunction MOSFETs The minimum specific on-resistance of 3-d superjunction devices,
Reference 8
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T16:30:30.578570Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.
Observation 24806665-31a6-4e56-aca0-db34baa94e8c · outbound
This paper cites Vertical power h k-mosfet of hexagonal layout,.
Taylor Modeling and Comparative Research Containing Aspect-Ratio Dependent Optimization of Three-Dimensional Hk Superjunction MOSFETs Vertical power h k-mosfet of hexagonal layout,
Reference 9
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T16:30:30.552795Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.
Observation b4713d83-b107-4354-8683-78822d8b01d9 · outbound
This paper cites Optimization and comparison of drift region specific on-resistance for vertical power hk mosfets and sj mosfets with identical aspect ratio,.
Taylor Modeling and Comparative Research Containing Aspect-Ratio Dependent Optimization of Three-Dimensional Hk Superjunction MOSFETs Optimization and comparison of drift region specific on-resistance for vertical power hk mosfets and sj mosfets with identical aspect ratio,
Reference 10
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T16:30:30.528246Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.
Observation dd933c42-7f48-4fdd-aff8-398c8b45f3d7 · outbound
This paper cites Numerical solutions for electric field lines and breakdown voltages in superjunction-like power devices,.
Taylor Modeling and Comparative Research Containing Aspect-Ratio Dependent Optimization of Three-Dimensional Hk Superjunction MOSFETs Numerical solutions for electric field lines and breakdown voltages in superjunction-like power devices,
Reference 11
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T16:30:30.507928Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.
Observation 6527d5c5-3428-4ff0-a92e-b9aa7df675e2 · outbound
This paper cites Modeling power vertical high- k mos device with interface charges via superposition methodology- breakdown voltage and specific on-resistance,.
Taylor Modeling and Comparative Research Containing Aspect-Ratio Dependent Optimization of Three-Dimensional Hk Superjunction MOSFETs Modeling power vertical high- k mos device with interface charges via superposition methodology- breakdown voltage and specific on-resistance,
Reference 12
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T16:30:30.486325Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.
Observation 55ba8128-a568-4279-8179-d38559a8c33c · outbound
This paper cites A 650 v super-junction mosfet with novel hexag- onal structure for superior static performance and high bv resilience to charge imbalance: A tcad simulation study,.
Taylor Modeling and Comparative Research Containing Aspect-Ratio Dependent Optimization of Three-Dimensional Hk Superjunction MOSFETs A 650 v super-junction mosfet with novel hexag- onal structure for superior static performance and high bv resilience to charge imbalance: A tcad simulation study,
Reference 13
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T16:30:30.467469Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.
Observation 6187d336-ebed-42c2-afad-581cc7761cc5 · outbound
This paper cites Ionization rates for electrons and holes in silicon,.
Taylor Modeling and Comparative Research Containing Aspect-Ratio Dependent Optimization of Three-Dimensional Hk Superjunction MOSFETs Ionization rates for electrons and holes in silicon,
Reference 14
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-12T16:30:30.446056Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.
Pith citing papers
No inbound Pith citation observations are available.