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REVIEW 4 major objections 5 minor 34 references

Angular dependence of large negative magnetoresistance in a field-induced Weyl semimetal candidate HoAuSn

T0 review · 4 major / 5 minor · reviewed 2026-08-12 · deepseek-v4-flash

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Pith's one-line read In the antiferromagnetic half-Heusler HoAuSn, a 9 T magnetic field reconstructs the band structure from a trivial semimetal into a Weyl semimetal, creating Weyl points near the Fermi level and raising the carrier concentration, which…

desk verdict New angular-dependent transport data on HoAuSn, but the field-induced Weyl mechanism is asserted, not demonstrated. read the letter →

arxiv 2411.14140 v1 pith:QVINPYQI submitted 2024-11-21 cond-mat.mtrl-sci

Yue Lu , Jie Chen , Feng Zhou , Yong-Chang Lau , Piotr Wisniewski , Dariusz Kaczorowski , Xue-Kui Xi , Wen-Hong Wang This is my paper · ORCID
classification cond-mat.mtrl-sci PACS 75.47.-m71.20.-b71.15.Mb
keywords negativemagnetoresistancehalf-HeuslercompoundsWeylsemimetalfield-inducedbandstructurechangeantiferromagnetismHoAuSnangularfirst-principlescalculations
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

HoAuSn, an antiferromagnetic half-Heusler with a Néel temperature of 1.9 K, exhibits a negative magnetoresistance of up to 99% at 9 T, an effect that survives to 20 K and does not require the magnetic field to be parallel to the current. The paper argues that this large negative magnetoresistance is not an ordinary scattering effect but the transport signature of a magnetic-field-driven band reconstruction. Transport measurements combined with first-principles calculations are used to propose that the field transforms HoAuSn from a trivial semimetal into a Weyl semimetal, with Weyl points appearing near the Fermi level, a larger Fermi surface, and a higher density of states at the Fermi energy. If this picture is right, HoAuSn provides a concrete antiferromagnetic half-Heusler in which a large negative magnetoresistance and a field-induced topological band transition are directly linked.

What carries the argument

The central object is the field-induced Weyl point: in the ferromagnetic band structure calculated with GGA+SOC+U ($U_{\mathrm{eff}}=8$ eV), Weyl points appear in the $\Gamma$–$L$ path near the Fermi level, and Wilson-loop calculations confirm their existence for magnetization along $[111]$, $[110]$, and $[001]$. This object carries the argument because it connects the applied magnetic field to transport: spin polarization from the field splits bands, closes the gap, enlarges the Fermi surface, raises the density of states at the Fermi level, and thereby increases carrier concentration and suppresses spin scattering. The angular-dependence measurements, in which the field is rotated between $[111]$, $[1\bar{1}0]$, and $[11\bar{2}]$ with current fixed along $[1\bar{1}0]$, together with the two-fold and four-fold AMR symmetry fits, are the experimental counterpart that ties the Weyl-point scenario to the observed negative MR.

What would settle it

Measure the Hall coefficient across the metamagnetic transition near 4 T: the field-induced Weyl scenario predicts a sharp increase in carrier concentration, visible as a jump in the Hall signal at the same field where the resistivity begins its two-order-of-magnitude drop; if the carrier density stays flat while the resistivity collapses, the band-reconstruction mechanism would be falsified.

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Extended reading notes

Core claim

The paper's central claim is that in HoAuSn a sufficiently strong magnetic field (on the order of 9 T) reconstructs the electronic band structure, taking the material from a trivial semimetal to a Weyl semimetal and producing a negative magnetoresistance as large as 99%. In the non-magnetic calculation HoAuSn is a trivial semimetal with a small hole pocket near $\Gamma$ and an electron pocket near $X$; in the ferromagnetic calculation, with magnetization along $[111]$ (and also for $[110]$ and $[001]$), Weyl points appear on the $\Gamma$–$L$ path, the Fermi-surface area grows, and the density of states at the Fermi level increases. The paper interprets the enlarged Fermi surface and increased carrier concentration as the reason the resistivity drops sharply under field, and it connects the angular dependence of the magnetoresistance, including the two-fold and four-fold components of the anisotropic magnetoresistance, to the same field-induced band change.

Load-bearing premise

The argument rests on assuming that a 9 T applied field puts HoAuSn into the collinear ferromagnetic state used in the calculation, with moments along $[111]$, $[110]$, or $[001]$, even though the measured zero-field ground state is antiferromagnetic below 1.9 K with a metamagnetic transition near 4 T, and no measurement or calculation shows that 9 T actually produces that ferromagnetic configuration.

Editorial extensions

If this is right

  • HoAuSn becomes a transport-based example of a magnetic-field-driven topological transition in an antiferromagnetic half-Heusler, with the 99% negative magnetoresistance serving as a bulk probe of the Weyl-point formation.
  • Because the negative MR persists to 20 K, well above the 1.9 K Néel temperature, the field-induced band reconstruction is robust against loss of long-range magnetic order, and the effect should also be observable in the paramagnetic regime.
  • The angular dependence of the high-field MR, with two-fold and four-fold components, provides a symmetry-based fingerprint that can be used to identify field-induced Weyl points in other antiferromagnetic half-Heuslers.
  • Since the effect appears for all measured angles between field and current, its origin is distinct from the conventional longitudinal chiral-anomaly negative MR and points to a more general band-structure-driven mechanism.
  • Replacing Ho with other lanthanide rare earths should tune the field scale and temperature window of the negative magnetoresistance, offering a materials-design route to even larger effects.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • A testable extension not performed in the paper is to look for the enlarged Fermi surface directly via quantum oscillations: the ferromagnetic band calculation predicts additional or shifted Shubnikov–de Haas frequencies above the metamagnetic transition, which could be checked by high-field torque or resistivity measurements.
  • The paper assumes a particular collinear ferromagnetic moment direction; an implication left implicit is that the angular dependence of the negative MR could be inverted to infer the actual moment direction at 9 T, effectively using transport as a magnetic-structure probe.
  • If the Weyl points really sit near the Fermi level, HoAuSn should also show other topological signatures, such as an anomalous Hall effect or a chiral-anomaly contribution in longitudinal fields; measuring these would provide independent cross-checks of the scenario.
  • The framework suggests a correlation across antiferromagnetic half-Heuslers between the rare-earth metamagnetic transition field and the onset field of the large negative MR; a systematic series of compounds could test this prediction.
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Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

4 major / 5 minor

Summary. The paper reports single-crystal growth, magnetization, resistivity, and angular-dependent magnetoresistance measurements on the antiferromagnetic half-Heusler HoAuSn. A negative MR of up to 99% at 9 T is observed, robust up to 20 K, and present for multiple field-current geometries. GGA+U+SOC band-structure calculations of a ferromagnetic state with magnetization along [111], [110], and [001] show Weyl points near the Fermi level, which the authors interpret as evidence that the applied field induces a transition from a trivial semimetal to a Weyl semimetal and thereby suppresses spin scattering and produces the large negative MR.

Significance. The transport data are carefully measured, and the observation of a 99% negative MR at 9 T, with clear angular dependence and persistence far above TN, is of empirical interest for antiferromagnetic half-Heuslers. The paper's value lies mainly in the magnetotransport dataset and the identification of HoAuSn as a candidate field-induced Weyl semimetal; the calculated Fermi surfaces and density of states provide qualitative support for band reconstruction. However, the central mechanism is not demonstrated: the assumed zero-field FM state is used as a proxy for the 9 T state, and no transport signature (Hall effect, longitudinal-only negative MR, quantum oscillations) directly links the negative MR to Weyl nodes. If the mechanism were established, the result would be significant for field-induced topological transitions in magnetic half-Heuslers; as it stands, it is a candidate mechanism with suggestive but incomplete evidence.

major comments (4)
  1. [Sec. 3, Fig. 4c; Sec. 2, Fig. 1f] The identification of the 9 T field-induced state with the zero-field collinear FM band structure of Fig. 4c is not justified: HoAuSn is antiferromagnetic below TN=1.9 K, and Fig. 1f shows a metamagnetic transition near 4 T with magnetization only gradually approaching saturation at 9 T. No field-dependent calculation or high-field magnetization comparison (e.g., the calculated FM moment vs. M(9 T)) is provided. If the 9 T state is only partially polarized or canted, the Weyl points in the Γ-L path may not exist near the Fermi level, and the central claim that the magnetic field induces the Weyl point collapses.
  2. [Sec. 2, Sec. 3 Fig. 4 caption] The GGA+U+SOC calculations use a hand-set Ueff = 8 eV for Ho 4f electrons with no sensitivity analysis or validation against the measured magnetic moment, band gap, or photoemission. The presence and energy position of Weyl points in the FM state are sensitive to Ueff and to the treatment of the 4f electrons; without such validation, the calculation cannot establish that Weyl points appear near EF specifically in the high-field state.
  3. [Sec. 3, Figs. 2b-2d; Conclusion] The transport evidence does not demonstrate Weyl nodes: the paper reports 99% negative MR for B||J and about 90% for B⊥J, yet the chiral-anomaly scenario predicts a pronounced longitudinal-transverse distinction, and the observed negative MR in transverse geometry is attributed to an unquantified increase in carrier concentration from the reconstructed band structure. No Hall measurement, carrier-density analysis, or quantitative magnetotransport model is provided, so the data cannot discriminate between the proposed Weyl mechanism and a generic field-driven insulator-to-metal transition in a canted or partially polarized state.
  4. [Sec. 3, Fig. 3] The attribution of the two-fold AMR symmetry to 'chiral anomalies' is speculative: no symmetry analysis or model calculation connects the chiral anomaly to the observed two-fold angular dependence, and the four-fold terms are fitted phenomenologically. At minimum, the angular-dependent data should be compared with expectations for a field-induced Weyl semimetal with the relevant magnetic point group, or the symmetry statement should be withdrawn.
minor comments (5)
  1. [Sec. 3, paragraph on negative-MR materials] Reference numbering errors: the Cd3As2 negative-MR work is cited as [29] but reference [29] is the MnFeGe paper (Tang et al.); the Cd3As2 nanowire paper is reference [30]. Similarly, BaMn2Bi2 is cited as [30] but appears as reference [31], and EuMnSb2 is cited as [31] but is reference [32]. The 'half-heusler alloy TbPbBi[25]' citation should be [26] (and the compound name should read TbPdBi).
  2. [Fig. 1c] Typo: 'extractd' should be 'extracted'.
  3. [Abstract and Sec. 2] The phrase 'magnetics fields' should be 'magnetic fields'.
  4. [Fig. 4 caption and Sec. 3] The calculation for the zero-moment state is referred to both as 'non-magnetic (NM)' (text) and 'paramagnetic' (Fig. 4 caption); please use one term consistently.
  5. [Sec. 3, angular dependence discussion] The current direction for the (001)-plane measurements shown in Fig. S4 is not specified in the main text; please state the crystallographic direction of the current in those measurements.

Circularity Check

0 steps flagged · score 2.0 of 10

No circular derivation chains found: the negative-MR data and DFT band structures are independent, and the main claim reduces to an unvalidated modeling assumption rather than to a fitted or self-referential input.

full rationale

The paper's derivation chain is not circular in the sense of the rubric. The large negative MR is measured transport data; the Weyl-point claim comes from separate GGA+U+SOC band-structure and Wilson-loop calculations. No equation in the paper fits a parameter to the MR curves and then re-predicts them, and the transport data are not used as inputs to the DFT. The weakest load-bearing move, treating the 9 T state as the collinear FM state with M along [111] (Section 3, Fig. 4c), is an unvalidated assumption about the field-polarized magnetic configuration, not a reduction of the conclusion to its own premises: the measured zero-field AFM state and the metamagnetic transition near 4 T do not logically force the DFT input. The hand-set Ueff = 8 eV is likewise a modeling choice, not a fit to the target observable. The only same-group citation, ref [19] (Chen et al. 2020) on chiral-anomaly negative MR in RPtBi, is used as background in a list with external refs [20,23,24] and is not load-bearing for the HoAuSn conclusion, which also rests on the external field-induced-Weyl framework of refs [25,26]. Accordingly the score is 2: a minor, non-load-bearing self-citation, with the central claim having independent experimental and computational content.

Assumptions & free parameters 1 free parameters · 3 assumptions · 0 invented entities

The central claim rests on one hand-set Hubbard parameter, a modeling substitution of the 9 T state by a zero-field FM calculation, and the standard chiral-anomaly transport picture imported from prior half-Heusler literature. There are no newly invented physical entities.

free parameters (1)
  • Ueff for Ho 4f electrons = 8 eV
    DFT uses GGA+U with Ueff=8 eV to approximate the strong 4f interaction. The paper gives no derivation or U-dependence check, and the existence and position of Weyl points can depend on this choice.
assumptions (3)
  • domain assumption PBE-GGA+SOC+U DFT provides a qualitatively correct electronic structure for HoAuSn.
    All topological conclusions, semimetal in the NM state and Weyl points in the FM state, rest on this approximation. See Section 2 and Figure 4.
  • ad hoc to paper The zero-field collinear ferromagnetic state with magnetization along [111], [110], or [001] represents the electronic structure under an applied field of 9 T.
    Invoked in Section 3 to explain the band structure after adding the magnetic field. The measured ground state is AFM with TN=1.9 K and a metamagnetic transition at 4 T, and no field-dependent calculation validates the assumed magnetic configuration.
  • domain assumption The large negative MR is caused by Weyl points acting through the chiral anomaly, despite being present in all field-current orientations.
    The paper invokes chiral anomaly in Section 3 and the conclusion but does not show the usual longitudinal-only signature or a quantitative scaling law; the angular dependence data do not isolate this mechanism.

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Pith. "Pith review of Angular dependence of large negative magnetoresistance in a field-induced Weyl semimetal candidate HoAuSn." pith.science (2026). https://pith.science/paper/QVINPYQI

@misc{pith2026241114140,
  author       = {Pith},
  title        = {Pith review of: Angular dependence of large negative magnetoresistance in a field-induced Weyl semimetal candidate HoAuSn},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/QVINPYQI}},
  note         = {Machine review of arXiv:2411.14140}
}
read the original abstract

The angular dependence of magnetoresistance (MR) in antiferromagnetic half-Heusler HoAuSn single crystals have been systematically studied. Negative MR, as large as 99%, is observed at 9 T, is not restricted to the specific configuration of applied magnetics fields and current, and can persist up to 20 K, much higher than the Neel temperature (TN 1.9 K). Experiments and first-principles calculations suggest that the observed large negative MR is derived from a magnetic field that reconstructs the band structure and induces a Weyl point, which changes the carrier concentration. Taking into consideration that large negative MR has so far been rarely reported, especially in antiferromagnetic materials, it is anticipated that the present work not only offers a guideline for searching materials with large negative MR but also helps to further realize other exotic topological electronic states in a large class of antiferromagnetic half-Heusler compounds.

Figures

Figures reproduced from arXiv: 2411.14140 by the authors.

Figure 1
Figure 1. FIG.1 [PITH_FULL_IMAGE:figures/full_fig_p009_1.png] view at source ↗
Figure 2
Figure 2. FIG.2 [PITH_FULL_IMAGE:figures/full_fig_p009_2.png] view at source ↗
Figure 3
Figure 3. FIG. 3 [PITH_FULL_IMAGE:figures/full_fig_p010_3.png] view at source ↗

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Works this paper leans on

34 extracted references · 34 canonical work pages

  1. [25]

    and Tokura Y ., Colossal negative magnetoresistance in field-induced Weyl semimetal of magnetic half-Heusler compound, Nature Communications, 2023, 14(1): 6339

    Ueda K., Yu T., Hirayama M., Kurokawa R., Nakajima T., Saito H., Kriener M., Hoshino M., Hashizume D., Arima T.-h., Arita R. and Tokura Y ., Colossal negative magnetoresistance in field-induced Weyl semimetal of magnetic half-Heusler compound, Nature Communications, 2023, 14(1): 6339

    work page 2023

  2. [26]

    H., Singleton J., Min L., Palmstrom J

    Zhu Y ., Huang C.-Y ., Wang Y ., Graf D., Lin H., Lee S. H., Singleton J., Min L., Palmstrom J. C., Bansil A., Singh B. and Mao Z., Large anomalous Hall effect and negative magnetoresistance in half -topological semimetals, Communications Physics, 2023, 6(1): 346

    work page 2023

  3. [1]

    N., Broto J

    Baibich M. N., Broto J. M., Fert A., Van Dau F. N., Petroff F., Etienne P., Creuzet G., Friederich A. and Chazelas J., Giant Magnetoresistance of (001)Fe/(001)Cr Magnetic Superlattices, Physical Review Letters, 1988, 61(21): 2472

    work page 1988

  4. [29]

    -X., Wang P.-H., You Y .-R., Wang Y .-D., Xu Z., Hou Z

    Tang J. -X., Wang P.-H., You Y .-R., Wang Y .-D., Xu Z., Hou Z. -P., Zhang H. -G., Xu G. -Z. and Xu F., Abnormal low -field M -type magnetoresistance in hexagonal noncollinear ferromagnetic MnFeGe alloy, Rare Metals, 2022, 41(8): 2680

    work page 2022

  5. [2]

    Fert A., Nobel Lecture: Origin, development, and future of spintronics, Reviews of Modern Physics, 2008, 80(4): 1517

    work page 2008

  6. [3]

    and Van Dau F

    Chappert C., Fert A. and Van Dau F. N., The emergence of spin electronics in data storage, Nature Materials, 2007, 6(11): 813

    work page 2007

  7. [4]

    W., Ma L., Tang M., Qiu X

    Dai Y ., Zhao Y . W., Ma L., Tang M., Qiu X. P., Liu Y ., Yuan Z. and Zhou S. M., Fourfold Anisotropic Magnetoresistance of L10 FePt Due to Relaxation Time Anisotropy, Physical Review Letters, 2022, 128(24) : 247202

    work page 2022

  8. [5]

    P., Kota Y ., Brown-Heft T

    Oogane M., McFadden A. P., Kota Y ., Brown-Heft T. L., Tsunoda M., Ando Y . and Palmstrøm C. J., Fourfold symmetric anisotropic magnetoresistance in half -metallic Co 2MnSi Heusler alloy thin films, Japanese Journal of Applied Physics, 2018, 57(6): 063001

    work page 2018

Show all 34 references
  1. [6]

    and Yu G.-H., Tunable perpendicular anisotropic magnetoresistance in CoO/Co/Pt heterostructures, Rare Metals, 2017, 42(2): 579

    Liu Q.-Q., Yang G., Zhang J.-Y ., Feng G.-N., Feng C., Zhan Q., Li M.- H. and Yu G.-H., Tunable perpendicular anisotropic magnetoresistance in CoO/Co/Pt heterostructures, Rare Metals, 2017, 42(2): 579

    2017

  2. [7]

    and Jiang Y ., Robust interface-induced unusual anomalous Hall effect in Mn 3Sn/Pt 12 bilayers, Rare Metals, 2022, 41(9): 3012

    Liu J.-J., Meng K.-K., Chen J.-K., Wu Y ., Miao J., Xu X.-G. and Jiang Y ., Robust interface-induced unusual anomalous Hall effect in Mn 3Sn/Pt 12 bilayers, Rare Metals, 2022, 41(9): 3012

    2022

  3. [8]

    Vlietstra N., Shan J., Castel V ., van Wees B. J. and Ben Youssef J., Spin- Hall magnetoresistance in platinum on yttrium iron garnet: Dependence on platinum thickness and in -plane/out-of-plane magnetization, Physical Review B, 2013, 87(18): 184421

    2013

  4. [9]

    C., Cai X

    Song T. C., Cai X. H., Tu M. W. Y ., Zhang X. O., Huang B. V ., Wilson N. P., Seyler K. L., Zhu L., Taniguchi T., Watanabe K., McGuire M. A., Cobden D. H., Xiao D., Yao W. and Xu X. D., Giant tunneling magnetoresistance in spin -filter van der Waals heteros tructures, Science,...

    2018

  5. [10]

    Parkin S. S. P., Kaiser C., Panchula A., Rice P. M., Hughes B., Samant M. and Yang S. -H., Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers, Nature Materials, 2004, 3(12): 862

    2004

  6. [11]

    P., Colossal magnetoresistance, Journal of Physics - Condensed Matter, 1997, 9(39): 8171

    Ramirez A. P., Colossal magnetoresistance, Journal of Physics - Condensed Matter, 1997, 9(39): 8171

    1997

  7. [12]

    S., Negative Magnetoresistance in Viscous Flow of Two- Dimensional Electrons, Physical Review Letters, 2016, 117(16): 166601

    Alekseev P. S., Negative Magnetoresistance in Viscous Flow of Two- Dimensional Electrons, Physical Review Letters, 2016, 117(16): 166601

    2016

  8. [13]

    Kondo J., RESISTANCE MINIMUM IN DILUTE MAGNETIC ALLOYS, Progress of Theoretical Physics, 1964, 32(1): 37

    1964

  9. [14]

    L., Khmel'nitzkii D., Larkin A

    Altshuler B. L., Khmel'nitzkii D., Larkin A. I. and Lee P. A., Magnetoresistance and Hall effect in a disordered two -dimensional 13 electron gas, Physical Review B, 1980, 22(11): 5142

    1980

  10. [15]

    E., Park S., Park J., Skourski Y ., Choi E

    Seo J., De C., Ha H., Lee J. E., Park S., Park J., Skourski Y ., Choi E. S., Kim B., Cho G. Y ., Yeom H. W., Cheong S.-W., Kim J. H., Yang B.-J., Kim K. and Kim J. S., Colossal angular magnetoresistance in ferrimagnetic nodal-line semiconductors, Nature, 2021, 599(7886): 576

    2021

  11. [16]

    A., Yao D.- X

    Yin J., Wu C., Li L., Yu J., Sun H., Shen B., Frandsen B. A., Yao D.- X. and Wang M., Large negative magnetoresistance in the antiferromagnetic rare -earth dichalcogenide EuTe 2, Physical Review Materials, 2020, 4(1): 013405

    2020

  12. [17]

    Liu E., Sun Y ., Kumar N., Muechler L., Sun A., Jiao L., Yang S.-Y ., Liu D., Liang A., Xu Q., Kroder J., Süß V ., Borrmann H., Shekhar C., Wang Z., Xi C., Wang W., Schnelle W., Wirth S., Chen Y ., Goennenwein S. T. B. and Felser C., Giant anomalous Hall eff ect in a ferromagn...

    2018

  13. [18]

    and Miao F., Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe2, Nature Communications, 2016, 7(1): 13142

    Wang Y ., Liu E., Liu H., Pan Y ., Zhang L., Zeng J., Fu Y ., Wang M., Xu K., Huang Z., Wang Z., Lu H.-Z., Xing D., Wang B., Wan X. and Miao F., Gate-tunable negative longitudinal magnetoresistance in the predicted type-II Weyl semimetal WTe2, Nature Communications, 2016, 7(1): 13142

    2016

  14. [19]

    Chen J., Li H., Ding B., Liu E., Yao Y ., Wu G. and Wang W., Chiral- anomaly induced large negative magnetoresistance and nontrivial π-Berry phase in half -Heusler compounds RPtBi (R=Tb, Ho, and Er), Applied Physics Letters, 2020, 116(22): 222403. 14

    2020

  15. [20]

    A., Cava R

    Hirschberger M., Kushwaha S., Wang Z., Gibson Q., Liang S., Belvin Carina A., Bernevig B. A., Cava R. J. and Ong N. P., The chiral anomaly and thermopower of Weyl fermions in the half -Heusler GdPtBi, Nature Materials, 2016, 15(11): 1161

    2016

  16. [21]

    C., Kampert E., Skourski Y ., Wosnitza J., Schnelle W., McCollam A., Zeitler U., Kübler J., Yan B., Klauss H

    Shekhar C., Kumar N., Grinenko V ., Singh S., Sarkar R., Luetkens H., Wu S.-C., Zhang Y ., Komarek A. C., Kampert E., Skourski Y ., Wosnitza J., Schnelle W., McCollam A., Zeitler U., Kübler J., Yan B., Klauss H. H., Parkin S. S. P. and Felser C., Anomalous Hall effect in Weyl ...

    2018

  17. [22]

    T., Feng W., Xiao D., Lynn J

    Suzuki T., Chisnell R., Devarakonda A., Liu Y . T., Feng W., Xiao D., Lynn J. W. and Checkelsky J. G., Large anomalous Hall effect in a half - Heusler antiferromagnet, Nature Physics, 2016, 12(12): 1119

    2016

  18. [23]

    Y ., Wu F., Wu Z

    Guo C. Y ., Wu F., Wu Z. Z., Smidman M., Cao C., Bostwick A., Jozwiak C., Rotenberg E., Liu Y ., Steglich F. and Yuan H. Q., Evidence for Weyl fermions in a canonical heavy -fermion semimetal YbPtBi, Nature Communications, 2018, 9(1): 4622

    2018

  19. [24]

    Pavlosiuk O., Kaczorowski D. and Wiśniewski P., Negative longitudinal magnetoresistance as a sign of a possible chiral magnetic anomaly in the half-Heusler antiferromagnet DyPdBi, Physical Review B, 2019, 99(12): 125142. 15

    2019

  20. [27]

    and Furthmuller J., Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set, Physical Review B, 1996, 54(16): 11169

    Kresse G. and Furthmuller J., Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set, Physical Review B, 1996, 54(16): 11169

    1996

  21. [28]

    P., Burke K

    Perdew J. P., Burke K. and Ernzerhof M., Generalized gradient approximation made simple, Physical Review Letters, 1997, 78(7): 3865

    1997

  22. [30]

    and Yu D.-P., Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires, Nature Communications, 2015, 6(1): 10137

    Li C.-Z., Wang L.-X., Liu H., Wang J., Liao Z.-M. and Yu D.-P., Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires, Nature Communications, 2015, 6(1): 10137

    2015

  23. [31]

    Y ., Nagata K

    Ogasawara T., Huynh K.-K., Tahara T., Kida T., Hagiwara M., Arčon 16 D., Kimata M., Matsushita S. Y ., Nagata K. and Tanigaki K., Large negative magnetoresistance in the antiferromagnet BaMn 2Bi2, Physical Review B, 2021, 103(12): 125108

    2021

  24. [32]

    and Luo J., Large negative magnetoresistance of a nearly Dirac material: Layered antimonide EuMnSb2, Physical Review B, 2017, 96(20): 205103

    Yi C., Yang S., Yang M., Wang L., Matsushita Y ., Miao S., Jiao Y ., Cheng J., Li Y ., Yamaura K., Shi Y . and Luo J., Large negative magnetoresistance of a nearly Dirac material: Layered antimonide EuMnSb2, Physical Review B, 2017, 96(20): 205103

    2017

  25. [33]

    and Yan B., Magnetically induced, Nature Materials, 2016, 15(11): 1149

    Felser C. and Yan B., Magnetically induced, Nature Materials, 2016, 15(11): 1149

    2016

  26. [34]

    Cano J., Bradlyn B., Wang Z., Hirschberger M., Ong N. P. and Bernevig B. A., Chiral anomaly factory: Creating Weyl fermions with a magnetic field, Physical Review B, 2017, 95(16): 161306

    2017

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