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REVIEW 3 major objections 5 minor 75 references

Electronic correlations in epitaxial graphene: Mott states proximitized to a relativistic electron gas

T0 review · 3 major / 5 minor · reviewed 2026-08-12 · deepseek-v4-flash

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Pith's one-line read The paper claims that a √3×√3 tin layer intercalated under epitaxial graphene on SiC(0001) is a strongly correlated Mott-Hubbard system whose pz electrons split into lower and upper Hubbard bands while graphene's Dirac cone survives.

desk verdict The Sn-√3 Mott layer under graphene is plausible and the STS/EELS/DMFT consistency is real, but the phase assignment is not element-specifically proven. read the letter →

arxiv 2412.01329 v1 pith:BLK6D5A7 submitted 2024-12-02 cond-mat.str-el cond-mat.mes-hall

Chitran Ghosal , Siheon Ryee , Zamin Mamiyev , Niklas Witt , Tim O. Wehling , Christoph Tegenkamp This is my paper · ORCID
classification cond-mat.str-elcond-mat.mes-hall PACS 71.27.+a73.22.Pr73.20.-r
keywords epitaxialgraphenetinintercalationMott-Hubbardbands√3×√3Snsuperstructuredynamicalmean-fieldtheoryscanningtunnelingspectroscopyelectronenergylossDiracelectrons
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This paper sets out to show that tin atoms intercalated beneath epitaxial graphene on SiC(0001) form a √3×√3 triangular lattice whose out-of-plane orbitals are so strongly correlated that they split into lower and upper Hubbard bands, while the graphene sheet above keeps its relativistic Dirac bands. The evidence is tunneling spectra with paired peaks near -0.5 V and +0.7 V (with L1/L2 and U1/U2 substructure), a non-dispersing 1.2 eV energy-loss peak, and dynamical mean-field calculations that produce the same Hubbard bands from a flat tin-derived band. If the assignment holds, the interface becomes a single epitaxial platform where Mott physics coexists with, and hybridizes to, a Dirac electron gas, with the tin registry (T4 versus H) and charge transfer as control knobs.

What carries the argument

The engine is an effective Hubbard-model Hamiltonian $H = H_0 + H_{\mathrm{int}}$ built from graphene and tin $p_z$ orbitals (the electron lobes sticking out of the layer): carbon and tin hopping terms, a single hybridization parameter $V_0$ between Sn and C, a crystal-field offset $\Delta = \epsilon_{\mathrm{Sn}} - \epsilon_{\mathrm{C}}$, and an on-site Hubbard interaction $U = 1.2$ eV on tin, solved by dynamical mean-field theory, a method that treats local quantum fluctuations beyond static mean field, using a continuous-time quantum Monte Carlo impurity solver. The flat Sn-$p_z$ band near the Fermi energy is the seed Mott state; the graphene Dirac bands act as the relativistic bath. A symmetry selection rule controls their coupling: at the graphene K point the Dirac states transform as the two-dimensional representations $E_1$ and $E_2$ under the sixfold symmetry of the hexagon, while the tin $p_z$ orbital transforms as the one-dimensional $A_1$ representation, so tin at the hexagon center (H) barely hybridizes with graphene, whereas tin below a carbon atom (T4) hybridizes strongly. The offset $\Delta$ governs charge transfer, and together $V_0$ and $\Delta$ determine whether the interface behaves as a Mott insulator or a doped correlated metal.

What would settle it

A spatial map of the √3 domains by element-specific core-level photoemission or Auger spectroscopy showing that tin coverage is far below one atom per √3 cell, or an angle-resolved photoemission spectrum showing no flat Sn-$p_z$ band with Hubbard satellites near -0.5 eV and +0.7 eV, would refute the central claim.

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Extended reading notes

Core claim

The central claim is that a locally ordered Sn-√3×√3 phase at the graphene/SiC interface hosts Mott-Hubbard bands formed by Sn pz orbitals, directly in proximity to the Dirac cone of graphene. In STS, the occupied side shows split peaks L1/L2 near -0.43 and -0.68 eV and the unoccupied side shows U1/U2 near +0.7 eV; their separation matches the 1.2 eV non-dispersing EELS loss and the roughly 1 eV Mott gap obtained from DMFT. The calculations show that the flat Sn-pz band gives rise to robust lower and upper Hubbard bands for both T4 and H registries, while the T4 registry allows hybridization with graphene that broadens and splits the Hubbard bands and the H registry suppresses hybridization by symmetry, leaving sharper, atomic-limit-like bands. When charge transfer is increased, quasiparticle peaks appear near the Fermi level, matching the correlated-metal signatures seen close to zero bias.

Load-bearing premise

The load-bearing premise is that the repeated diffraction pattern and the bias-dependent microscope contrast come from a tin triangular lattice beneath the graphene, an assignment made from symmetry and imaging rather than from element-specific or momentum-resolved measurements; if those domains are instead silicon-carbide or buffer-layer reconstructions, or if the local tin coverage differs from one atom per repeat unit, the strong-correlation interpretation has no substrate.

Editorial extensions

If this is right

  • The 1.2 eV non-dispersing EELS loss and the roughly 1.2 eV separation between the L1/L2 and U1/U2 STS peaks are the same Mott-Hubbard gap, so the correlated state is visible in both tunnel and loss spectroscopy.
  • Because the flat Sn-$p_z$ band produces Hubbard bands for both T4 and H registries, the Mott state is robust to local stacking; the registry only controls how much hybridization broadens and splits the bands.
  • The electron doping found in the graphene sheet (about 7.8×10^12 cm^-2, Fermi level around 330 meV above the Dirac point) provides the charge reservoir that can drive the Sn layer from a Mott insulator toward a doped correlated metal with quasiparticle peaks near the Fermi energy.
  • In the H registry the doped system resembles a doped Mott insulator beside a charge reservoir, while in the T4 registry the doped Mott state hybridizes with Dirac electrons, a situation the paper compares to magic-angle twisted bilayer graphene.
  • Molecular doping of the graphene side (for example with F4-TCNQ) should tune the correlated state, since the paper identifies charge transfer, not only U and hybridization, as a control parameter.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • An immediate test is angle-resolved photoemission of the √3 domains: it should resolve a nearly flat Sn-$p_z$ band split into Hubbard satellites near -0.5 eV and +0.7 eV, cleanly separating tin states from the graphene Dirac cone.
  • The registry-controlled hybridization suggests that other group-IV intercalants, such as Ge or Pb, might form the same proximitized Mott family on SiC(0001) with different spin-orbit coupling and Hubbard U.
  • Since the √3 phase is grown by partial de-intercalation of a full Sn monolayer, the domain boundaries are a natural place to look for one-dimensional correlated or metallic states not discussed in the paper.
  • If the Mott assignment is correct, the system offers a Kondo-like platform in epitaxial graphene: the flat Sn band plays the role of a correlated lattice and the Dirac cone the conduction bath, with the T4/H registry tuning the effective hybridization.
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Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

3 major / 5 minor

Summary. The manuscript reports a combined SPA-LEED, STM/STS, EELS, DFT, and DMFT study of Sn intercalated under epitaxial graphene on SiC(0001). After full Sn intercalation and partial de-intercalation, the authors observe √3×√3 LEED reflexes and a surface phase with 6×6/6√3 periodicities; STS shows peaks near -0.5 V and +0.7 V with L1/L2 and U1/U2 substructure, and EELS shows a non-dispersing 1.2 eV loss. DFT+DMFT with U=1.2 eV produces lower and upper Hubbard bands from Sn-pz orbitals for both T4 and H registries, with hybridization- and charge-transfer-dependent spectra. The paper interprets these observations as Mott-Hubbard bands of a Sn-√3 triangular lattice coexisting with Dirac electrons, and emphasizes T4/H hybridization selection rules and charge-transfer tunability.

Significance. If the structural identification is correct, the work is significant: it would extend Mott physics into an epitaxial graphene platform, with a correlated triangular Sn layer proximitized to Dirac electrons, and the T4/H selection-rule asymmetry is an elegant and falsifiable prediction. The experimental probes are mutually consistent (STS gap ≈1.2 eV, EELS loss ≈1.2 eV, DMFT Hubbard gap on the same scale), and the DFT data are stated to be deposited on NOMAD. The robustness of the Hubbard bands to T4/H stacking is a strength. However, the significance is conditional: the element-specific identification of the √3 phase as Sn is missing, and the agreement between experiment and theory is partly enforced by the choice U=1.2 eV. These limitations need to be addressed before the central claim can be taken as established.

major comments (3)
  1. [Structure of EG/Sn interface: SPA-LEED and STM (Figs. 2–4)] The load-bearing premise that the √3×√3 domains are an ordered Sn-pz triangular lattice is not established. The paper itself calls the phase 'nominally Sn-√3 phases' (Fig. 5 caption) and describes the STM area as 'contains locally Sn-√3 phases' (Fig. 3e caption); the √3 LEED pattern after de-intercalation is a superposition over a surface that contains Sn-(1×1) patches, disordered buffer regions, and the 6√3 graphene/SiC reconstruction (Fig. 3a). The Sn coverage is known only globally from a quartz microbalance, and the √3 distance in the pair-correlation function at -0.5 V and +1.0 V (Fig. 4d) is a symmetry analysis of tunneling contrast, not a chemical identification. Since a graphene √3 reconstruction from intervalley scattering is already observed on the Sn-(1×1) phase (Ref. 65), and SiC or buffer remnants can also produce √3 periodicities, the assignment of all subsequent 1.2 eV features to Sn-pz Mott bands requires element-specific confirmation (e.g., XPS/AES of the de-intercalated phase or element-specific STM/STS). Without it, the DMFT model in Eqs. (1)–(3), which assumes one Sn pz orbital per √3 cell, is not guaranteed to apply to the measured spectra.
  2. [DMFT calculations and Figs. 8–9] The claimed 'excellent agreement' between theory and experiment is partly by construction. U is set to 1.2 eV 'as a representative value considering the previous studies on Sn surface systems' (Methods), and the Sn hopping parameters are taken from Sn/Si(111) (Refs. 33, 54), while V0 is selected so that the noninteracting tight-binding bands fit the DFT bands (Figs. 8c,d). The DMFT Mott gap at half-filling is controlled by U, so the computed ~1.2 eV separation between lower and upper Hubbard bands in Fig. 9 is not an independent prediction of the measured 1.2 eV STS gap and EELS loss; it is largely a restatement of the input U. An independent estimate of U for this specific Sn/graphene/SiC interface (e.g., constrained RPA or GW) and a scan over U would be needed to claim that the energy scale is a falsifiable outcome. This is a major issue because the paper's conclusion that the system is in the Mott regime rests on this scale.
  3. [Electronic structure: EELS and STS (Figs. 5–6)] The assignment of the non-dispersing 1.2 eV EELS loss to Hubbard-band excitations is not uniquely supported by the data shown. The loss peak has FWHM=0.4 eV, no comparison with the disordered-buffer or Sn-(1×1) phases in the same loss range is presented, and the correlation with annealing (growth of √3 LEED intensity and loss intensity, Figs. 2e and 5) is also compatible with growth of an ordered non-Sn √3 phase. The paper does not calculate the EELS loss function or the joint density of states from the DMFT spectra, so the identification rests on energy coincidence with the chosen U. Given that the structural premise is also unproven, the 1.2 eV feature could also arise from SiC-related interface states or interband transitions. A momentum-resolved analysis or at least a computed loss function from the model would substantiate the assignment.
minor comments (5)
  1. [References] Reference 50 has an empty DOI ('DOI: .'), and the Data Availability statement is therefore incomplete; the NOMAD link/identifier should be supplied.
  2. [General] Typos and broken text should be corrected, including 'caclulations are availble' in Ref. 50 and the stray 'and' at the end of the section before 'Interplay of hybridization' ('agrees well our theoretical findings. and').
  3. [Fig. 7b] The number of spectra and the procedure used to obtain the averaged peak positions and the Mott-gap variation in the inset are not stated; please clarify whether error bars were evaluated.
  4. [Fig. 9 caption] The caption states that the color bar indicates spectral weight in the lowest-lying non-interacting band, but the figure panels show momentum-integrated A(ω); please reconcile the caption with the panels.
  5. [Methods] The Methods state that EELS-LEED provides a momentum resolution around 0.001 Å^-1, but no details of the primary energy and angle-mapping geometry used for the dispersion in Fig. 5c are given; please specify.

Circularity Check

0 steps flagged · score 0.0 of 10

No circularity: the DMFT Hubbard bands follow from externally grounded interaction and hopping parameters, and the experiment-theory comparison is not a self-referential reduction.

full rationale

The paper's derivation chain is not circular. The Hubbard U entering Eq. (3) is taken from an external prior study: 'We use U = 1.2 eV as a representative value considering the previous studies on Sn surface systems38.' The Sn hoppings are likewise external ab initio inputs: 'we set tSn1 = 27.3 meV used in Ref.38 and tSn2 = -0.3881 tSn1 and tSn3 = 0.1444 tSn1 for longer-range hopping by referring to the ab initio data for Sn-(√3×√3) on Si(111)33,54.' The hybridization V0 is the only free parameter and is calibrated to the paper's own DFT, not to the spectroscopic target: 'the tight-binding bands shown in Figs. 8c) and d) closely replicate the corresponding DFT bands around the Fermi level for each structure presented in Figs. 8a) and b). Thus, V0 = 0.7 and 1.3 eV should fall into a reasonable range of V0.' The LHB/UHB are consequences of applying this U to a half-filled flat band; the statement that 'the most notable and robust feature is the emergence of the upper Hubbard band (UHB) and the lower Hubbard band (LHB) from the flat Sn-pz derived band' is a model output, not a re-statement of the measured STS peaks. The comparison 'Mott gaps ... on the order of 1 eV fit to the loss energy in EELS and match the gap between the L1/L2 and U1/U2 states in STS' is an ex post agreement, not the construction of those features. The √3 phase assignment being based on LEED/STM contrast ('nominally Sn-√3 phases') is an evidentiary weakness, but it is not a circular reduction; nothing in the theory is defined by the experimental peak positions. The only author-overlapping in-preparation citation (Ref. 65) supports a secondary point about intervalley scattering on the Sn-(1×1) phase and is not load-bearing for the Mott-Hubbard claim. Hence no significant circularity.

Assumptions & free parameters 3 free parameters · 5 assumptions · 0 invented entities

The model is a low-energy Hubbard model with parameters imported from prior surface studies or calibrated to the paper's own DFT. The central 'agreement' is therefore a consistency check: the Mott gap scale follows from the chosen U, while the stacking-dependent broadening and quasiparticle-peak emergence are emergent outcomes of the DMFT calculation.

free parameters (3)
  • Hubbard interaction U on Sn pz = 1.2 eV (taken from prior Sn/SiC studies, Ref 38)
    The DMFT Hubbard gap is roughly set by U; choosing a different U would move the lower and upper Hubbard bands and change the claimed match to the 1.2 eV loss and the STS gap.
  • Hybridization strength V0 = 0.7 eV and 1.3 eV
    Two representative values chosen because the non-interacting tight-binding bands reproduce the paper's own DFT bands in Fig 8; not measured independently.
  • Crystal field Delta = epsilon_Sn - epsilon_C = 0 and 0.5 eV (control variable)
    Models charge transfer and is varied to produce either particle-hole symmetric Hubbard bands or a doped Mott state with quasiparticle peaks; the comparison to STS only places an upper bound |Delta| << 0.5 eV.
assumptions (5)
  • domain assumption The real 6√3×6√3 reconstruction of graphene on SiC can be approximated by a √3×√3 supercell with graphene stretched into a 2×2 registration, with the T4 and H placements bracketing the hybridization.
    Used in 'Electronic structure calculations' and Fig 1 to make DFT tractable; the actual strain and local registry of the full reconstruction are not computed.
  • ad hoc to paper The Hubbard interaction acts only on Sn pz orbitals, and the static Hartree term is assumed to be already contained in H0 through the occupation subtraction in Hint (Eq 3).
    Introduced in the Model Hamiltonian section; this prevents double counting with DFT but assumes the DFT mean field equals the static Hartree part of the model.
  • domain assumption The hybridization formula Eq (2) with decay length delta0=0.184 a and vertical spacing l_perp=3.45 Å is transferable from twisted bilayer graphene to the Sn/graphene interface.
    Taken from Refs 55,56 and the DFT-relaxed simplified cell; the shape of V_ij controls the relative coupling strength in T4 versus H positions.
  • domain assumption Sn hopping parameters tSn2 and tSn3 from Sn/√3 on Si(111) are transferable to Sn/√3 on SiC(0001).
    The model section uses tSn1 from Ref 38 and tSn2, tSn3 from Refs 33,54; substrate differences could modify the Sn band structure.
  • domain assumption DMFT is restricted to paramagnetic solutions without spatial symmetry breaking at T=0.005 eV.
    Stated in 'DMFT calculations'; magnetic or charge order, if present, would shift or split the calculated Hubbard bands and change the comparison to STS.

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Pith. "Pith review of Electronic correlations in epitaxial graphene: Mott states proximitized to a relativistic electron gas." pith.science (2026). https://pith.science/paper/BLK6D5A7

@misc{pith2026241201329,
  author       = {Pith},
  title        = {Pith review of: Electronic correlations in epitaxial graphene: Mott states proximitized to a relativistic electron gas},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/BLK6D5A7}},
  note         = {Machine review of arXiv:2412.01329}
}
abstract

Graphene, renowned for its exceptional electronic and optical properties as a robust 2D material, traditionally lacks electronic correlation effects. Proximity coupling offers a promising method to endow quantum materials with novel properties. In this study, we achieve such a proximity coupling by intercalating Sn between the buffer layer of graphene on SiC(0001), allowing us to explore the coupling between a correlated 2D electron gas and a Dirac metal. This results in the stabilization of Sn-$\sqrt{3}$ superlattice structures at the interface, which reveal Mott-Hubbard bands, in excellent agreement with both experimental observations and theoretical predictions. Additionally, we found signatures of quasiparticle peaks close to the Fermi energy, in detail depending on the hybridization strength and doping level.

Figures

Figures reproduced from arXiv: 2412.01329 by the authors.

Figure 1
Figure 1. (a): Illustration of the full 6 √ 3 × 6 √ 3 supercell reconstruction of graphene on SiC(0001) and √ 3× √ 3 supercells capturing the Sn superstructure with different local align￾ments of approximate 2 × 2 graphene sheets with respect to SiC. The unit cells of graphene and SiC are also shown. For the SiC substrate, only the topmost Si atom is depicted. (b,c): Crystal structure of the approximate √ 3 × √ 3 cell model f… view at source ↗
Figure 2
Figure 2. (a) SPA-LEED image of the buffer layer (BL) before intercalation of Sn. (b) [PITH_FULL_IMAGE:figures/full_fig_p008_2.png] view at source ↗
Figure 3
Figure 3. (a) Large scale STM image (+2.0 V, 0.5 nA) showing three different phases, i.e., [PITH_FULL_IMAGE:figures/full_fig_p010_3.png] view at source ↗
Figures from the paper (6 more)
Figure 4
Figure 4. Figure 4: (a-c) The STM area phase of the green box in Fig. [PITH_FULL_IMAGE:figures/full_fig_p011_4.png]
Figure 5
Figure 5. Figure 5: EEL spectra of the Sn-√ 3 phase after different steps of annealing. a) Loss spectra taken after the first appearance of √ 3-reflexes in LEED, showing the dispersing graphene sheet plasmon loss 40. b) Loss spectra after various heating cycles revealing besides the graph…
Figure 6
Figure 6. Figure 6: High resolution STS spectra taken along the unit cell of the [PITH_FULL_IMAGE:figures/full_fig_p014_6.png]
Figure 7
Figure 7. Figure 7: Evaluation of the STS spectra shown in Fig. [PITH_FULL_IMAGE:figures/full_fig_p016_7.png]
Figure 8
Figure 8. Figure 8: (a,b): Electronic structure from DFT with flatband highlighting of the orbital [PITH_FULL_IMAGE:figures/full_fig_p017_8.png]
Figure 9
Figure 9. Figure 9: (a–c) The momentum-dependent spectral function [PITH_FULL_IMAGE:figures/full_fig_p018_9.png]

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Reference graph

Works this paper leans on

75 extracted references · 68 canonical work pages

  1. [1]

    Stacking of 2D Materials

    Guo, H.-W.; Hu, Z.; Liu, Z.-B.; Tian, J.-G. Stacking of 2D Materials . Advanced Functional Materials 2021, 31, 2007810

    work page 2021

  2. [2]

    Unconventional superconductivity in magic-angle graphene superlattices

    Cao, Y.; Fatemi, V.; Fang, S.; Watanabe, K.; Taniguchi, T.; Kaxiras, E.; Jarillo-Herrero, P. Unconventional superconductivity in magic-angle graphene superlattices. Nature 2018, 556, 43--50

    2018

  3. [3]

    L.; Luo, J

    Cao, Y.; Fatemi, V.; Demir, A.; Fang, S.; Tomarken, S. L.; Luo, J. Y.; Sanchez-Yamagishi, J. D.; Watanabe, K.; Taniguchi, T.; Kaxiras, E.; Ashoori, R. C.; Jarillo-Herrero, P. Correlated insulator behaviour at half-filling in magic-angle graphene superlattices. Nature 2018, 556, 80--84

    2018

  4. [4]

    H.; Shan, J.; Mak, K

    Tang, Y.; Li, L.; Li, T.; Xu, Y.; Liu, S.; Barmak, K.; Watanabe, K.; Taniguchi, T.; MacDonald, A. H.; Shan, J.; Mak, K. F. Simulation of Hubbard model physics in WSe2/WS2 moir\' e superlattices . Nature 2020, 579, 353--358

    work page 2020

  5. [5]

    F.; Shan, J

    Tang, Y.; Su, K.; Li, L.; Xu, Y.; Liu, S.; Watanabe, K.; Taniguchi, T.; Hone, J.; Jian, C.-M.; Xu, C.; Mak, K. F.; Shan, J. Evidence of frustrated magnetic interactions in a Wigner-Mott insulator . Nature Nanotechnology 2023, 18, 233--237

    work page 2023

  6. [6]

    P.; Yazdani, A

    Nuckolls, K. P.; Yazdani, A. A microscopic perspective on moiré materials. Nat. Rev. Mater. 2024, 9, 460--480

    work page 2024

  7. [7]

    A.; Efetov, D

    Bernevig, B. A.; Efetov, D. K. Twisted bilayer graphene’s gallery of phases. Physics Today 2024, 77, 38--44

    work page 2024

  8. [8]

    Symmetry breaking in twisted double bilayer graphene

    He, M.; Li, Y.; Cai, J.; Liu, Y.; Watanabe, K.; Taniguchi, T.; Xu, X.; Yankowitz, M. Symmetry breaking in twisted double bilayer graphene. Nature Physics 2021, 17, 26--30

    work page 2021

Show all 75 references
  1. [9]

    M.; Zheliuk, O.; Leermakers, I.; Yuan, N

    Lu, J. M.; Zheliuk, O.; Leermakers, I.; Yuan, N. F. Q.; Zeitler, U.; Law, K. T.; Ye, J. T. Evidence for two-dimensional Ising superconductivity in gated MoS<sub>2</sub>. Science 2015, 350, 1353--1357

    2015

  2. [10]

    T.; Lee, P

    Law, K. T.; Lee, P. A. 1T-TaS<sub>2</sub> as a quantum spin liquid. Proceedings of the National Academy of Sciences 2017, 114, 6996--7000

    2017

  3. [11]

    Ruan, W. et al. Evidence for quantum spin liquid behaviour in single-layer 1T- TaSe 2 from scanning tunnelling microscopy. 17, 1154--1161, Number: 10 Publisher: Nature Publishing Group

  4. [12]

    C.; Chen, G.; Lado, J

    Vaňo, V.; Amini, M.; Ganguli, S. C.; Chen, G.; Lado, J. L.; Kezilebieke, S.; Liljeroth, P. Artificial heavy fermions in a van der Waals heterostructure. 599, 582--586, Number: 7886 Publisher: Nature Publishing Group

  5. [13]

    I.; Yan, B.; Sangiovanni, G.; Wehling, T.; Valent \' , R

    Crippa, L.; Bae, H.; Wunderlich, P.; Mazin, I. I.; Yan, B.; Sangiovanni, G.; Wehling, T.; Valent \' , R. Heavy fermions vs doped Mott physics in heterogeneous Ta-dichalcogenide bilayers. Nature Communications 2024, 15, 1357

    2024

  6. [14]

    K.; Green, O.; Avraham, N.; Beidenkopf, H.; Feldman, I.; Kanigel, A.; Klein, A.; Goldstein, M.; Banerjee, A.; Sela, E.; Dagan, Y

    Silber, I.; Mathimalar, S.; Mangel, I.; Nayak, A. K.; Green, O.; Avraham, N.; Beidenkopf, H.; Feldman, I.; Kanigel, A.; Klein, A.; Goldstein, M.; Banerjee, A.; Sela, E.; Dagan, Y. Two-component nematic superconductivity in 4Hb-TaS2. Nature Communications 2024, 15, 824

    2024

  7. [15]

    Signatures of superconductivity near 80 K in a nickelate under high pressure

    Sun, H.; Huo, M.; Hu, X.; Li, J.; Liu, Z.; Han, Y.; Tang, L.; Mao, Z.; Yang, P.; Wang, B.; Cheng, J.; Yao, D.-X.; Zhang, G.-M.; Wang, M. Signatures of superconductivity near 80 K in a nickelate under high pressure . Nature 2023, 621, 493--498

    2023

  8. [16]

    Ryee, S.; Witt, N.; Wehling, T. O. Quenched Pair Breaking by Interlayer Correlations as a Key to Superconductivity in La _ 3 Ni _ 2 O _ 7 . Phys. Rev. Lett. 2024, 133, 096002

    2024

  9. [17]

    Regan, E. C. et al. Mott and generalized Wigner crystal states in WSe2/WS2 moiré superlattices. Nature 2020, 579, 359--363

    2020

  10. [18]

    Strongly correlated electrons and hybrid excitons in a moiré heterostructure

    Shimazaki, Y.; Schwartz, I.; Watanabe, K.; Taniguchi, T.; Kroner, M.; Imamoğlu, A. Strongly correlated electrons and hybrid excitons in a moiré heterostructure. Nature 2020, 580, 472--477

    2020

  11. [19]

    C.; Wang, D.; Zhao, W.; Kahn, S.; Yumigeta, K.; Blei, M.; Taniguchi, T.; Watanabe, K.; Tongay, S.; Zettl, A.; Crommie, M

    Li, H.; Li, S.; Regan, E. C.; Wang, D.; Zhao, W.; Kahn, S.; Yumigeta, K.; Blei, M.; Taniguchi, T.; Watanabe, K.; Tongay, S.; Zettl, A.; Crommie, M. F.; Wang, F. Imaging two-dimensional generalized Wigner crystals. Nature 2021, 597, 650--654

    2021

  12. [20]

    Ghiotto, A.; Shih, E.-M.; Pereira, G. S. S. G.; Rhodes, D. A.; Kim, B.; Zang, J.; Millis, A. J.; Watanabe, K.; Taniguchi, T.; Hone, J. C.; Wang, L.; Dean, C. R.; Pasupathy, A. N. Quantum criticality in twisted transition metal dichalcogenides. Nature 2021, 597, 345--349

    2021

  13. [21]

    V.; Bostwick, A.; Horn, K.; Jobst, J.; Kellogg, G

    Emtsev, K. V.; Bostwick, A.; Horn, K.; Jobst, J.; Kellogg, G. L.; Ley, L.; McChesney, J. L.; Ohta, T.; Reshanov, S. A.; Röhrl, J.; Rotenberg, E.; Schmid, A. K.; Waldmann, D.; Weber, H. B.; Seyller, T. Towards wafer-size graphene layers by atmospheric pressure graphitization o...

    2009

  14. [22]

    M.; Pierz, K.; Wundrack, S.; Stosch, R.; Dziomba, T.; Götz, M.; Baringhaus, J.; Aprojanz, J.; Tegenkamp, C.; Lidzba, J.; Seyller, T.; Hohls, F.; Ahlers, F

    Kruskopf, M.; Pakdehi, D. M.; Pierz, K.; Wundrack, S.; Stosch, R.; Dziomba, T.; Götz, M.; Baringhaus, J.; Aprojanz, J.; Tegenkamp, C.; Lidzba, J.; Seyller, T.; Hohls, F.; Ahlers, F. J.; Schumacher, H. W. Comeback of epitaxial graphene for electronics: large-area growth of bil...

    2016

  15. [23]

    J.; Schumacher, H

    Yin, Y.; Kruskopf, M.; Bauer, S.; Tschirner, T.; Pierz, K.; Hohls, F.; Haug, R. J.; Schumacher, H. W. Quantum Hall resistance standards based on epitaxial graphene with p-type conductivity . Applied Physics Letters 2024, 125, 064001

    2024

  16. [24]

    A.; Starke, U

    Riedl, C.; Coletti, C.; Iwasaki, T.; Zakharov, A. A.; Starke, U. Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation. Phys. Rev. Lett. 2009, 103, 246804

    2009

  17. [25]

    V.; Zakharov, A

    Emtsev, K. V.; Zakharov, A. A.; Coletti, C.; Forti, S.; Starke, U. Ambipolar doping in quasifree epitaxial graphene on SiC(0001) controlled by Ge intercalation. Phys. Rev. B 2011, 84, 125423

    2011

  18. [26]

    T.; Lee, D

    Gierz, I.; Suzuki, T.; Weitz, R. T.; Lee, D. S.; Krauss, B.; Riedl, C.; Starke, U.; H\"ochst, H.; Smet, J. H.; Ast, C. R.; Kern, K. Electronic decoupling of an epitaxial graphene monolayer by gold intercalation. Phys. Rev. B 2010, 81, 235408

    2010

  19. [27]

    Quasi-Freestanding Graphene via Sulfur Intercalation: Evidence for a Transition State

    Wolff, S.; Tilgner, N.; Speck, F.; Schädlich, P.; Göhler, F.; Seyller, T. Quasi-Freestanding Graphene via Sulfur Intercalation: Evidence for a Transition State . Advanced Materials Interfaces 2024, 11, 2300725

    2024

  20. [28]

    Schädlich, P. et al. Domain Boundary Formation Within an Intercalated Pb Monolayer Featuring Charge-Neutral Epitaxial Graphene. Adv. Mater. Interfaces 2023, 10, 2300471

    2023

  21. [29]

    ohr, A.; K\

    Link, S.; Forti, S.; St\"ohr, A.; K\"uster, K.; R\"osner, M.; Hirschmeier, D.; Chen, C.; Avila, J.; Asensio, M. C.; Zakharov, A. A.; Wehling, T. O.; Lichtenstein, A. I.; Katsnelson, M. I.; Starke, U. Introducing strong correlation effects into graphene by gadolinium intercalat...

    2019

  22. [30]

    Tuning the doping level of graphene in the vicinity of the Van Hove singularity via ytterbium intercalation

    Rosenzweig, P.; Karakachian, H.; Link, S.; K\"uster, K.; Starke, U. Tuning the doping level of graphene in the vicinity of the Van Hove singularity via ytterbium intercalation. Phys. Rev. B 2019, 100, 035445

    2019

  23. [31]

    M.; Kuster, K.; Starke, U.; Guinea, F.; Silva-Guillen, J

    Herrera, S.; Parra-Martinez, G.; Rosenzweig, P.; Matta, B.; Polley, C. M.; Kuster, K.; Starke, U.; Guinea, F.; Silva-Guillen, J. A.; Naumis, G. G.; Pantaleon, P. A. Electronic Structure and Kohn-Luttinger Superconductivity of Heavily-Doped Single-Layer Graphene. 2024; https://...

    2024 arXiv

  24. [32]

    Long-Range Coulomb Interactions in Surface Systems: A First-Principles Description within Self-Consistently Combined GW and Dynamical Mean-Field Theory

    Hansmann, P.; Ayral, T.; Vaugier, L.; Werner, P.; Biermann, S. Long-Range Coulomb Interactions in Surface Systems: A First-Principles Description within Self-Consistently Combined GW and Dynamical Mean-Field Theory. Phys. Rev. Lett. 2013, 110, 166401

    2013

  25. [33]

    ager, M.; Brand, C.; Weber, A. P.; Fanciulli, M.; Dil, J. H.; Pfn\

    J\"ager, M.; Brand, C.; Weber, A. P.; Fanciulli, M.; Dil, J. H.; Pfn\"ur, H.; Tegenkamp, C. -Sn phase on Si(111): Spin texture of a two-dimensional Mott state . Phys. Rev. B 2018, 98, 165422

    2018

  26. [34]

    V.; Saranin, A

    Nakamura, T.; Kim, H.; Ichinokura, S.; Takayama, A.; Zotov, A. V.; Saranin, A. A.; Hasegawa, Y.; Hasegawa, S. Unconventional superconductivity in the single-atom-layer alloy Si(111) - 3 3 - (Tl, 0.16em 0ex Pb) . Phys. Rev. B 2018, 98, 134505

    2018

  27. [35]

    Chiral d -wave superconductivity in a triangular surface lattice mediated by long-range interaction

    Cao, X.; Ayral, T.; Zhong, Z.; Parcollet, O.; Manske, D.; Hansmann, P. Chiral d -wave superconductivity in a triangular surface lattice mediated by long-range interaction. Physical Review B 2018, 97, 155145

    2018

  28. [36]

    S.; Liu, G.; Ye, F.; Wang, K.; Johnston, S.; Weitering, H

    Wu, X.; Ming, F.; Smith, T. S.; Liu, G.; Ye, F.; Wang, K.; Johnston, S.; Weitering, H. H. Superconductivity in a H ole- D oped M ott- I nsulating T riangular A datom L ayer on a S ilicon S urface. Physical Review Letters 2020, 125, 117001

    2020

  29. [37]

    D.; Mai, P.; Maier, T

    Ming, F.; Wu, X.; Chen, C.; Wang, K. D.; Mai, P.; Maier, T. A.; Strockoz, J.; Venderbos, J. W. F.; González, C.; Ortega, J.; Johnston, S.; Weitering, H. H. Evidence for chiral superconductivity on a silicon surface. Nature Physics 2023, 19, 500--506

    2023

  30. [38]

    Triangular Spin-Orbit-Coupled Lattice with Strong Coulomb Correlations: Sn Atoms on a SiC(0001) Substrate

    Glass, S.; Li, G.; Adler, F.; Aulbach, J.; Fleszar, A.; Thomale, R.; Hanke, W.; Claessen, R.; Sch\"afer, J. Triangular Spin-Orbit-Coupled Lattice with Strong Coulomb Correlations: Sn Atoms on a SiC(0001) Substrate. Phys. Rev. Lett. 2015, 114, 247602

    2015

  31. [39]

    Sn intercalation into the BL/SiC (0001) interface: A detailed SPA-LEED investigation

    Mamiyev, Z.; Tegenkamp, C. Sn intercalation into the BL/SiC (0001) interface: A detailed SPA-LEED investigation . Surfaces and Interfaces 2022, 34, 102304

    2022

  32. [40]

    Exploring graphene-substrate interactions: plasmonic excitation in Sn-intercalated epitaxial graphene

    Mamiyev, Z.; Tegenkamp, C. Exploring graphene-substrate interactions: plasmonic excitation in Sn-intercalated epitaxial graphene . 2D Materials 2024, 11, 025013

    2024

  33. [41]

    A new LEED instrument for quantitative spot profile analysis

    Scheithauer, U.; Meyer, G.; Henzler, M. A new LEED instrument for quantitative spot profile analysis. Surface Science 1986, 178, 441--451

    1986

  34. [42]

    Enforced Long-Range Order in 1D Wires by Coupling to Higher Dimensions

    Mamiyev, Z.; Fink, C.; Holtgrewe, K.; Pfn\"ur, H.; Sanna, S. Enforced Long-Range Order in 1D Wires by Coupling to Higher Dimensions. Phys. Rev. Lett. 2021, 126, 106101

    2021

  35. [43]

    Ab initiomolecular dynamics for liquid metals

    Kresse, G.; Hafner, J. Ab initiomolecular dynamics for liquid metals. Physical Review B 1993, 47, 558--561

    1993

  36. [44]

    Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set

    Kresse, G.; Furthmüller, J. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Computational Materials Science 1996, 6, 15--50

    1996

  37. [45]

    Efficient iterative schemes forab initiototal-energy calculations using a plane-wave basis set

    Kresse, G.; Furthmüller, J. Efficient iterative schemes forab initiototal-energy calculations using a plane-wave basis set. Physical Review B 1996, 54, 11169--11186

    1996

  38. [46]

    P.; Burke, K.; Ernzerhof, M

    Perdew, J. P.; Burke, K.; Ernzerhof, M. Generalized G radient A pproximation M ade S imple. Physical Review Letters 1996, 77, 3865--3868

    1996

  39. [47]

    Blöchl, P. E. Projector augmented-wave method. Physical Review B 1994, 50, 17953--17979

    1994

  40. [48]

    From ultrasoft pseudopotentials to the projector augmented-wave method

    Kresse, G.; Joubert, D. From ultrasoft pseudopotentials to the projector augmented-wave method. Physical Review B 1999, 59, 1758--1775

    1999

  41. [49]

    A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu

    Grimme, S.; Antony, J.; Ehrlich, S.; Krieg, H. A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu . The Journal of Chemical Physics 2010, 132, 154104

    2010

  42. [50]

    The DFT caclulations are availble on the NOMAD repository at DOI: https://https://doi.org/10.17172/nomad/XYZ] 10.17172/nomad/XYZ

    doi

  43. [51]

    Structural and electronic properties of epitaxial graphene on SiC(0001): a review of growth, characterization, transfer doping and hydrogen intercalation

    Riedl, C.; Coletti, C.; Starke, U. Structural and electronic properties of epitaxial graphene on SiC(0001): a review of growth, characterization, transfer doping and hydrogen intercalation . Journal of Physics D: Applied Physics 2010, 43, 374009

    2010

  44. [52]

    Ab Initio Study of Graphene on SiC

    Mattausch, A.; Pankratov, O. Ab Initio Study of Graphene on SiC. Phys. Rev. Lett. 2007, 99, 076802

    2007

  45. [53]

    O.; S S a s s o g g lu, E.; Friedrich, C.; Lichtenstein, A

    Wehling, T. O.; S S a s s o g g lu, E.; Friedrich, C.; Lichtenstein, A. I.; Katsnelson, M. I.; Bl\"ugel, S. Strength of Effective Coulomb Interactions in Graphene and Graphite. Phys. Rev. Lett. 2011, 106, 236805

    2011

  46. [54]

    Magnetic order in a frustrated two-dimensional atom lattice at a semiconductor surface

    Li, G.; Höpfner, P.; Schäfer, J.; Blumenstein, C.; Meyer, S.; Bostwick, A.; Rotenberg, E.; Claessen, R.; Hanke, W. Magnetic order in a frustrated two-dimensional atom lattice at a semiconductor surface. Nature Communications 2013, 4, 1620

    2013

  47. [55]

    Localization of Dirac Electrons in Rotated Graphene Bilayers

    Trambly de Laissardière, G.; Mayou, D.; Magaud, L. Localization of Dirac Electrons in Rotated Graphene Bilayers. Nano Letters 2010, 10, 804--808, PMID: 20121163

    2010

  48. [56]

    Optical absorption in twisted bilayer graphene

    Moon, P.; Koshino, M. Optical absorption in twisted bilayer graphene. Phys. Rev. B 2013, 87, 205404

    2013

  49. [57]

    Georges, A.; Kotliar, G.; Krauth, W.; Rozenberg, M. J. Dynamical mean-field theory of strongly correlated fermion systems and the limit of infinite dimensions. Rev. Mod. Phys. 1996, 68, 13--125

    1996

  50. [58]

    J.; Lichtenstein, A

    Gull, E.; Millis, A. J.; Lichtenstein, A. I.; Rubtsov, A. N.; Troyer, M.; Werner, P. Continuous-time Monte Carlo methods for quantum impurity models. Rev. Mod. Phys. 2011, 83, 349--404

    2011

  51. [59]

    Accelerated impurity solver for DMFT and its diagrammatic extensions

    Melnick, C.; Sémon, P.; Yu, K.; D'Imperio, N.; Tremblay, A.-M.; Kotliar, G. Accelerated impurity solver for DMFT and its diagrammatic extensions. Computer Physics Communications 2021, 267, 108075

    2021

  52. [60]

    Bayesian inference and the analytic continuation of imaginary-time quantum Monte Carlo data

    Jarrell, M.; Gubernatis, J. Bayesian inference and the analytic continuation of imaginary-time quantum Monte Carlo data. Physics Reports 1996, 269, 133--195

    1996

  53. [61]

    Bergeron, D.; Tremblay, A.-M. S. Algorithms for optimized maximum entropy and diagnostic tools for analytic continuation. Phys. Rev. E 2016, 94, 023303

    2016

  54. [62]

    D.; Rotenberg, E.; Speck, F

    Seyller, T.; Bostwick, A.; Emtsev, K.; Horn, K.; Ley, L.; McChesney, J.; Ohta, T.; Riley, J. D.; Rotenberg, E.; Speck, F. Epitaxial graphene: a new material. physica status solidi (b) 2008, 245, 1436--1446

    2008

  55. [63]

    Petrović, M.; zu Heringdorf, F. J. M.; von Hoegen, M. H.; Thiel, P. A.; Tringides, M. C. Broad background in electron diffraction of 2D materials as a signature of their superior quality. Nanotechnology 2021, 32, 505706

    2021

  56. [64]

    V.; Mishra, N.; Coletti, C.; Wehling, T

    Federl, M.-E.; Witt, N.; Yang, B.; Hofmann, N.; Gradl, J.; Weigl, L.; Piquero-Zulaica, I.; Barth, J. V.; Mishra, N.; Coletti, C.; Wehling, T. O.; Gierz, I. Non-equilibrium carrier dynamics and band structure of graphene on 2D tin. 2024; https://arxiv.org/abs/2405.01075

    2024 arXiv

  57. [65]

    Mamiyev, Z.; Balayeva, N.; Ghosal, C.; Zahn, D. R. T.; Tegenkamp, C. Confinement induced strain effects in epitaxial graphene . in preparation 2024,

    2024

  58. [66]

    W.; Wang, F.; Girit, C.; Yayon, Y.; Panlasigui, M.; Zettl, A.; Crommie, M

    Zhang, Y.; Brar, V. W.; Wang, F.; Girit, C.; Yayon, Y.; Panlasigui, M.; Zettl, A.; Crommie, M. F. Giant phonon-induced conductance in scanning tunnelling spectroscopy of gate-tunable graphene. Nature Physics 2008, 4, 627--630

    2008

  59. [67]

    Stewart, G. R. Heavy-fermion systems. Rev. Mod. Phys. 1984, 56, 755--787

    1984

  60. [68]

    G.; Bernevig, B

    Checkelsky, J. G.; Bernevig, B. A.; Coleman, P.; Si, Q.; Paschen, S. Flat bands, strange metals and the K ondo effect. Nature Review Materials 2024, 9, 509–526

    2024

  61. [69]

    Song, Z.-D.; Bernevig, B. A. Magic- A ngle T wisted B ilayer G raphene as a T opological H eavy F ermion P roblem. Phys. Rev. Lett. 2022, 129, 047601

    2022

  62. [70]

    A.; Valent\' , R.; Sangiovanni, G.; Wehling, T

    Rai, G.; Crippa, L.; C a a lug a a ru, D.; Hu, H.; Paoletti, F.; de' Medici, L.; Georges, A.; Bernevig, B. A.; Valent\' , R.; Sangiovanni, G.; Wehling, T. Dynamical C orrelations and O rder in M agic- A ngle T wisted B ilayer G raphene. Phys. Rev. X 2024, 14, 031045

    2024

  63. [71]

    O.; Balatsky, A

    Wehling, T. O.; Balatsky, A. V.; Katsnelson, M. I.; Lichtenstein, A. I.; Rosch, A. Orbitally controlled Kondo effect of Co adatoms on graphene. Phys. Rev. B 2010, 81, 115427

    2010

  64. [72]

    C.; Rice, T

    Zhang, F. C.; Rice, T. M. Effective Hamiltonian for the superconducting Cu oxides. Phys. Rev. B 1988, 37, 3759--3761

    1988

  65. [73]

    Strength of correlations in electron- and hole-doped cuprates

    Weber, C.; Haule, K.; Kotliar, G. Strength of correlations in electron- and hole-doped cuprates. Nature Physics 2010, 6, 574--578

    2010

  66. [74]

    Dynamical screening in La _ 2 CuO _ 4

    Werner, P.; Sakuma, R.; Nilsson, F.; Aryasetiawan, F. Dynamical screening in La _ 2 CuO _ 4 . Phys. Rev. B 2015, 91, 125142

    2015

  67. [75]

    o rster, D. F.; Busse, C.; Petrović, M.; Kralj, M.; Bl \

    Schumacher, S.; Wehling, T. O.; Lazić, P.; Runte, S.; F \"o rster, D. F.; Busse, C.; Petrović, M.; Kralj, M.; Bl \"u gel, S.; Atodiresei, N.; Caciuc, V.; Michely, T. The Backside of Graphene: Manipulating Adsorption by Intercalation. Nano Letters 2013, 13, 5013--5019 mciteth...

    2013

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