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Inverse Rashba-Edelstein THz emission modulation induced by ferroelectricity in CoFeB/PtSe2/MoSe2//LiNbO3 systems

T0 review · 3 major / 4 minor · reviewed 2026-08-10 · deepseek-v4-flash

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Pith's one-line read Ferroelectric polarization direction modulates the terahertz emission of a CoFeB/PtSe2/MoSe2 stack by 15-20 percent, via band shifts that tune the inverse Rashba-Edelstein effect at the MoSe2/PtSe2 interface.

desk verdict Solid experimental demonstration of ferroelectric-polarization control of THz emission; the microscopic IREE attribution is plausible but underdetermined by the simplified DFT model. read the letter →

arxiv 2412.20108 v1 pith:QAMB4F72 submitted 2024-12-28 cond-mat.mtrl-sci

S. Massabeau , O. Paull , A. Pezo , F. Miljevic , M. Mičica , A. Grisard , P. Morfin , R. Lebrun
show 5 more authors
H. Jaffrès S. Dhillon J.-M. George M. Jamet M. Bibes
This is my paper · ORCID
classification cond-mat.mtrl-sci
keywords spintronicTHzemitterinverseRashba-EdelsteineffectferroelectricfieldtransitionmetaldichalcogenidesLiNbO3spin-to-chargeconversiontime-domainspectroscopyfield-effectspin-orbit
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This paper reports that the direction of ferroelectric polarization in a LiNbO3 substrate modulates the terahertz emission from a CoFeB/PtSe2/MoSe2 heterostructure, with the up-poled area emitting roughly 15 to 20 percent more than the down-poled area. The authors argue that the ferroelectric field shifts the bands of the MoSe2/PtSe2 interface, changing the efficiency of the inverse Rashba-Edelstein effect that converts spin current into charge current. If correct, this establishes a non-volatile, voltage-free way to control a spintronic THz emitter, which matters for future THz communication and sensing devices.

What carries the argument

The inverse Rashba-Edelstein effect (IREE): at an interface with Rashba spin-orbit splitting, an incoming spin current creates a net transverse charge current. The paper's central object is the MoSe2/PtSe2 interface, where inversion-symmetry breaking from MoSe2 lifts the spin degeneracy of PtSe2 and produces Rashba states in the valence band; the ferroelectric field from LiNbO3 shifts these bands and thereby tunes the spin accumulation and the IREE conversion efficiency.

What would settle it

Measure the magnetic THz emission from CoFeB/PtSe2 directly on the same bi-domain LiNbO3 (no MoSe2 layer); if the 15-20 percent up/down modulation persists, the modulation is not specific to the MoSe2/PtSe2 Rashba interface. Alternatively, perform angle-resolved photoemission on the two poled domains and check for the predicted 0.32 eV band shift.

Watch

Extended reading notes

Core claim

The paper claims to demonstrate ferroelectric control of the magnetic contribution to THz emission in a large-area CoFeB/PtSe2/MoSe2//LiNbO3 stack. By comparing the two pre-poled domains of the substrate with THz time-domain spectroscopy, the authors find a sizeable, reproducible modulation of the spin-to-charge-conversion signal, and they trace it to the inverse Rashba-Edelstein effect at the MoSe2/PtSe2 interface. Density functional theory calculations show that an electric field of 0.25 V/Å shifts the semiconducting bands by about 0.32 eV and changes the spin accumulation in the valence-band energy window where the pump laser excites the system, qualitatively matching the observed up/down asymmetry.

Load-bearing premise

The DFT calculation replaces the real LiNbO3 substrate with a uniform electric field applied to the free-standing trilayer, assuming this captures the band shifts and spin accumulation changes that occur in the full stack with CoFeB and the ferroelectric interface.

Editorial extensions

If this is right

  • A non-volatile ferroelectric gate can replace an external voltage bias for modulating spintronic THz sources, lowering the energy cost of THz emitters.
  • The modulation depth (about 15-20 percent at fixed Fermi level) could be increased up to a factor of 2 by gating the system to move the Fermi level to a more favorable energy window, according to the DFT results.
  • The same field-effect spin-orbit architecture could be extended to other ferroelectric/TMD combinations to engineer the Rashba energy window for a given pump photon energy.
  • Because the non-magnetic optical-rectification signal flips phase with polarization while the magnetic signal only changes amplitude, the up/down domains can be read out unambiguously, offering a self-calibrating emitter design.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • A direct test would be to repeat the experiment on CoFeB/PtSe2//LiNbO3 without the MoSe2 layer: if the modulation mostly vanishes, the MoSe2/PtSe2 interface is indeed the active spin-to-charge conversion site.
  • The 0.32 eV band shift predicted by DFT could be verified by angle-resolved photoemission on the two poled domains; a mismatch would point to charge transfer or interface charging as the true origin.
  • If the effect is as robust as reported, writing ferroelectric domain patterns could allow spatial encoding of THz emission patterns on a single chip, turning the sample into a programmable THz emitter.
  • Extending the measurement to other pump photon energies and comparing the modulation depth would test the claim that the effect is tied to the valence-band energy window, and could reveal the optimal operating conditions.
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Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

3 major / 4 minor

Summary. The paper reports THz time-domain spectroscopy measurements on a CoFeB/PtSe2/MoSe2//LiNbO3 heterostructure with pre-poled ferroelectric domains, showing that the magnetic (spin-to-charge conversion) contribution to the THz emission is roughly 15-20% larger on the up-poled area than on the down-poled area across the measured pump-power range. The non-magnetic contribution shows the expected phase reversal with ferroelectric polarization direction, confirming the domain assignment. The authors rationalize the modulation by density-functional-theory calculations of a free-standing MoSe2(1ML)/PtSe2(2ML) trilayer under a uniform electric field, interpreting the result as a ferroelectric-field-induced shift of Rashba-split valence-band states that changes the inverse Rashba-Edelstein effect at the MoSe2/PtSe2 interface. The central claim is that ferroelectric polarization non-volatilely modulates the spintronic THz emission through field-effect control of interfacial spin-to-charge conversion.

Significance. If the interpretation is correct, the paper demonstrates a non-volatile, low-energy-control mechanism for a spintronic THz emitter, which is technologically relevant for compact THz sources and modulators. The experimental core is solid: the magnetic THz contribution is time-resolved with error bars, the power dependence shows consistent up/down ordering, and the phase comparison with a Pt/Co standard emitter fixes the conversion sign. The DFT work is independent first-principles calculation with the electric-field amplitude chosen from the known ferroelectric polarization rather than fitted to the THz modulation, and the spin-accumulation sign is cross-checked against a separate calculation of the Pt spin Hall conductivity. These are genuine strengths. The main weakness is that the microscopic attribution to IREE at the MoSe2/PtSe2 interface rests on a simplified model that omits the CoFeB electrode and the LiNbO3 substrate, leaving alternative origins of the observed modulation insufficiently excluded.

major comments (3)
  1. [Section III, Fig. 4b] The microscopic rationalization is built on a free-standing MoSe2(1ML)/PtSe2(2ML) trilayer subjected to a uniform electric field of E=0.25 V/Å, with no LiNbO3 substrate and no CoFeB electrode. In the real stack the metallic CoFeB layer can screen the ferroelectric field, and the potential profile across the TMD layers may differ substantially from a uniform field; the computed 0.32 eV band shift and the up/down ordering shown in Fig. 4b may therefore not survive in the device. A stack-realistic calculation, or an experimental probe of the band shift in the actual heterostructure, is required before the measured modulation can be attributed specifically to IREE at the MoSe2/PtSe2 interface.
  2. [Section III and Eq. B1] The spin accumulation response in Eq. (B1) contains an undetermined relaxation time tau, and the comparison with experiment is made at a single energy cut E=EF-1.5 eV. The text notes that the up/down ratio 'could be increased up to 2' by moving the Fermi level, so the model does not quantitatively predict the observed 15-20% modulation. The authors should specify how the 1.55 eV optical excitation populates the chosen energy window and show that the sign and ordering of the spin accumulation are robust across the relevant energy range, rather than being an artifact of the cut.
  3. [Section II, Fig. 3c] The attribution of the magnetic THz signal to IREE at the MoSe2/PtSe2 interface relies on comparison with a Pt/Co emitter and on the TMD-thickness dependence reported in Ref. 19, but a ferroelectric-field-induced change at the CoFeB/PtSe2 interface or in the spin-injection efficiency from CoFeB could also produce an up/down modulation of the magnetic THz contribution. Additional control experiments, such as varying the TMD stack thickness, inserting a non-magnetic spacer at the CoFeB/TMD interface, or measuring the field dependence of the magnetic contribution, would be needed to exclude these alternative microscopic origins.
minor comments (4)
  1. [Throughout] There are several typos and grammatical slips, including 'Density Functionalnal' in the Section III heading, 'Suplementary' in the main text and Appendix B, 'proportionnal' in Appendix E, and 'waver-scale' in the Introduction; these should be corrected.
  2. [Section III, Fig. 4b] The choice of E=0.25 V/Å should be justified more explicitly with the corresponding LiNbO3 polarization value and the expected field across the 2D layers, since the result depends directly on this amplitude.
  3. [Appendix B] The statement that the semi-conducting nature of the layers 'prevents field screening from the substrate' would benefit from a quantitative explanation, especially because the adjacent CoFeB metal is a potential source of screening.
  4. [Fig. 3b] The error-bar definition is given in the caption, but the number of repeated measurements underlying each point and whether the up/down ratio is computed point-by-point or from average amplitudes should be stated for reproducibility.

Circularity Check

0 steps flagged · score 2.0 of 10

No load-bearing circularity; DFT electric field input is not fitted to the THz modulation, and same-group citations are corroborative prior experiments.

full rationale

The derivation chain is not circular. The experimental observable is the up/down difference in magnetic THz emission (Fig. 3), which is measured directly and is independent of all theory inputs. The DFT calculation applies a fixed electric field amplitude E=0.25 V/Å chosen from the known polarization of LiNbO3, not adjusted to reproduce the measured 15-20% modulation; both field directions are computed and the ordering of spin accumulation at the valence-band window is a non-trivial output of Eq. (B1). The sign of the computed spin accumulation is cross-checked against a separate first-principles spin Hall conductivity calculation for Pt (Appendix E), and the band-shift interpretation is compared with an earlier experimental observation on WSe2/BiFeO3 (ref 20). Refs 19, 20, and 24 involve overlapping authors, but they are independent, externally falsifiable measurements in different systems, not uniqueness theorems or fitted inputs, so they do not force the present conclusion. The uniform-field proxy for the LiNbO3 substrate and the selection of the E_F-1.5 eV energy cut are modeling assumptions and a robustness limitation, but they are not circular reductions: the calculation could in principle have produced the opposite ordering or no modulation, and the model does not contain the measured 15-20% ratio as an input.

Assumptions & free parameters 2 free parameters · 4 assumptions · 0 invented entities

The central interpretation relies on a simplified DFT model where the ferroelectric field is a single external parameter and the relaxation time is unspecified. These are modeling inputs, not fitted targets, so the circularity burden is low, but they do limit the quantitative strength of the theoretical support.

free parameters (2)
  • Electric field amplitude E = 0.25 V/A
    Chosen to represent the ferroelectric field from LiNbO3 based on its large polarization; not fitted to THz data, but a hand-picked input that sets the band shift magnitude (0.32 eV).
  • Relaxation time tau in the spin accumulation formula (Eq. B1)
    Appears as a prefactor in the linear-response calculation; its value is not reported, leaving spin accumulation magnitudes in arbitrary units and preventing quantitative comparison to the measured 15 to 20 percent modulation.
assumptions (4)
  • domain assumption PBE exchange-correlation functional and the SIESTA implementation accurately describe the band structure and spin texture of the MoSe2/PtSe2 trilayer.
    Standard DFT but known to underestimate band gaps; the paper relies on PBE results for the energy window and spin accumulation.
  • ad hoc to paper A uniform electric field applied to a free-standing trilayer reproduces the effect of the ferroelectric LiNbO3 substrate on the 2D layers.
    The calculation omits the substrate, the CoFeB layer, and possible charge transfer or screening at the real interface.
  • standard math The linear-response formula for spin accumulation (Eq. B1) is a valid description of the inverse Rashba-Edelstein effect in this system.
    Standard Kubo-like linear response; requires the constant relaxation time approximation.
  • domain assumption The energy window around E_F - 1.5 eV, probed by the 1.55 eV pump photons, is the dominant contributor to the measured THz emission.
    The paper associates the pump photon energy with the valence-band window in the DFT, but does not compute photoexcitation dynamics.

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Cite this review

Pith. "Pith review of Inverse Rashba-Edelstein THz emission modulation induced by ferroelectricity in CoFeB/PtSe2/MoSe2//LiNbO3 systems." pith.science (2026). https://pith.science/paper/QAMB4F72

@misc{pith2026241220108,
  author       = {Pith},
  title        = {Pith review of: Inverse Rashba-Edelstein THz emission modulation induced by ferroelectricity in CoFeB/PtSe2/MoSe2//LiNbO3 systems},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/QAMB4F72}},
  note         = {Machine review of arXiv:2412.20108}
}
read the original abstract

Spintronic Terahertz emitters, based on optically triggered spin-to-charge interconversion processes, have recently emerged as novel route towards compact and efficient THz sources. Yet, the next challenge for further technologically-relevant devices remains to modulate the emission, with low-energy consumption operation. To this aim, ferroelectric materials coupled to active spin-orbit layers such as two-dimensional transition metal dichalcogenides are suitable candidates. In this work, we present the realization of a large area heterostructure of CoFeB/PtSe2/MoSe2 on a bi-domain LiNbO3 substrate. Using THz time-domain spectroscopy, we show that the ferroelectric polarization direction induces a sizeable modulation of the THz emission. We rationalise these experimental results by using band structure and spin accumulation calculations that are consistent with an interfacial spin-to-charge conversion mediated by inverse Rashba-Edelstein effect at the MoSe2/PtSe2 interface and being tuned by ferroelectricity in the adjacent LiNbO3 surface. This work points out the relevance of field effect spin-orbit architectures for novel THz technologies.

Figures

Figures reproduced from arXiv: 2412.20108 by the authors.

Figure 1
Figure 1. (a-b) Piezoresponse force microscopy data of the substrate showing the polarisation up (a) and polarisation down (b). (c-d) Reflected high-energy electron diffraction (RHEED) images along the (c) [100] and (d) [1-10] crystallographic directions directly after growth. (e) RHEED image along the [100] direction after the transfer process of the 2D layer from the Mica to the ferroelectric LiNbO3 substrate. (f) Schematic… view at source ↗
Figure 2
Figure 2. (a) Time traces of non-magnetic THz contribution, taken at maximum emission angle, for up (blue) and down (red) polarization areas of the LiNbO3 substrate, showing a full phase reversal. We define a positive (+)/negative (-) phase when the absolute maximum is positive/negative, respectively. (b) Peak-to-peak amplitude of the non-magnetic contribution to THz emission, reported on a polar plot as a function of the sam… view at source ↗
Figure 3
Figure 3. (a) Temporal traces of magnetic THz contribution, taken at 80 mW for up and down areas. (b) Down panel: Peak-to-peak amplitude of the magnetic contribution for up and down areas, as a function of the incident infrared pump power. Error bars are calculated using time-resolved signal standard deviation over a 500 fs time window before pulse detection. Upper panel: Calculated ratio between the peak-to-peak amplitudes i… view at source ↗
Figures from the paper (5 more)
Figure 4
Figure 4. Figure 4: (a) Projected density of states (pDOS) on PtSe2 top (dark grey), middle layer (light grey) and MoSe2 (green). Inset: Charge density for the trilayer at the isosurface 0.01 e/Å3 , displaying the strong hybridization between MoSe2 and PtSe2. The interlayer distances are …
Figure 5
Figure 5. Figure 5: Atomic force microscopy of the surface of the LiNbO3 substrate before transfer of the 2D layer. 20 [PITH_FULL_IMAGE:figures/full_fig_p020_5.png]
Figure 6
Figure 6. Figure 6: Band structure of the MoSe2(1ML)/PtSe2(2ML) trilayer, projected either on MoSe2 (left) or PtSe2 (right) layers. Dashed red rectangle highlights the energy window with an increased density of states in MoSe2(1ML). 21 [PITH_FULL_IMAGE:figures/full_fig_p021_6.png]
Figure 7
Figure 7. Figure 7: Spin accumulation as a function of the energy for pristine PtSe2 (plain lines) and MoSe2(1ML)/PtSe2(2ML) trilayer (dashed lines), while applying an external electric field E=0.25 V/Å pointing up (blue) and down (red), in agreement with the experiment. The spin accumula…
Figure 8
Figure 8. Figure 8: Spin Hall conductivity σ z x,y as a function of the energy for Pt (red) and W (black), showing inverse signs nearby the Fermi level (orange area). Pt sign is found to be positive, in agreement with convention, which thus allows to conclude on the emission sign from FM/…

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