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arxiv: 2501.06936 · v1 · submitted 2025-01-12 · ⚛️ physics.optics · physics.app-ph

Full C- and L-band tunable erbium-doped integrated lasers via scalable manufacturing

Xinru Ji , Xuan Yang , Yang Liu , Zheru Qiu , Grigory Lihachev , Simone Bianconi , Jiale Sun , Andrey Voloshin
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Taegon Kim Joseph C. Olson Tobias J. Kippenberg
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Pith reviewed 2026-05-23 06:10 UTC · model grok-4.3

classification ⚛️ physics.optics physics.app-ph
keywords erbium-doped laserssilicon nitridephotonic integrated circuitswafer-scale fabricationtunable lasersC-band L-bandion implantationlow-loss waveguides
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The pith

Thinning silicon nitride waveguides to 200 nm enables low-energy erbium implantation for wafer-scale tunable lasers with 91 nm range.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper establishes that erbium-doped lasers built in silicon nitride photonic circuits can be fabricated at full wafer scale using standard industrial tools once the waveguide height is reduced to 200 nm. This change drops the ion implantation energy below 500 keV, removing the previous barrier that required specialized high-energy beams and prevented volume production. The resulting lasers tune across 91 nm to cover nearly all of the C and L bands, deliver 36 mW fiber-coupled power, and maintain a 95 Hz intrinsic linewidth while operating stably to 125 °C. A reader would care because the same erbium gain medium that works well in fiber can now be integrated on chips in quantities suitable for communications, sensing, and frequency synthesis.

Core claim

Using 200 nm-thick Si3N4 waveguides, we reduce the ion beam energy requirement to below 500 keV, enabling efficient wafer-scale implantation with an industrial 300 mm ion implanter. We demonstrate a laser wavelength tuning range of 91 nm, covering nearly the entire optical C- and L-bands, with fiber-coupled output power reaching 36 mW and an intrinsic linewidth of 95 Hz. The temperature-insensitive properties of erbium ions allowed stable laser operation up to 125°C and lasing with less than 15 MHz drift for over 6 hours at room temperature using a remote fiber pump.

What carries the argument

200 nm-thick Si3N4 waveguides with low-energy erbium ion implantation that supplies the gain medium while remaining compatible with 300 mm foundry processes.

If this is right

  • Lasers covering 91 nm can be produced across entire 300 mm wafers using standard ion implanters.
  • Devices maintain stable single-frequency operation with less than 15 MHz drift over hours at room temperature.
  • Output reaches 36 mW fiber-coupled power with 95 Hz intrinsic linewidth across the C and L bands.
  • Operation remains stable up to 125 °C without active cooling due to erbium properties.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • The same thinning step could allow other rare-earth ions to be implanted at industrial energies for additional on-chip gain bands.
  • Full-wafer compatibility opens the possibility of co-fabricating these lasers with modulators, detectors, and frequency combs on one substrate.
  • Cost reduction from foundry-scale production may accelerate adoption in LiDAR and microwave photonics systems that currently rely on discrete fiber lasers.

Load-bearing premise

Lowering waveguide height to 200 nm and implantation energy below 500 keV preserves the ultra-low loss, high gain, and temperature stability of erbium-doped silicon nitride without creating new loss or gain limits.

What would settle it

A direct comparison measurement that shows higher propagation loss or lower optical gain in the 200 nm implanted waveguides than in prior 700 nm devices would disprove that the performance properties are preserved.

Figures

Figures reproduced from arXiv: 2501.06936 by Andrey Voloshin, Grigory Lihachev, Jiale Sun, Joseph C. Olson, Simone Bianconi, Taegon Kim, Tobias J. Kippenberg, Xinru Ji, Xuan Yang, Yang Liu, Zheru Qiu.

Figure 1
Figure 1. Figure 1 [PITH_FULL_IMAGE:figures/full_fig_p002_1.png] view at source ↗
Figure 2
Figure 2. Figure 2: Characterization of volume-manufactured Er:Si3N4 integrated laser components. (A) Schematic of a hybrid integrated tunable Er laser featuring a microresonator-based Vernier filter for wavelength tuning, broadband loop mirrors for tunable mode reflection, and an Er:Si3N4 gain section. (B) Measured photoluminescence (PL) spectra of Er-doped Si3N4 and SiO2 films, pumped by a 520 nm argon laser to excite the 4… view at source ↗
Figure 3
Figure 3. Figure 3: Performance of EDWLs in optical C + L bands. (A) Experimental setup for laser wavelength tuning demonstration. OSA: optical spectrum analyzer, PM: power meter, PD: photodiode, ESA: electric spectrum analyzer, CW Ref. laser - Toptica CTL. (B) Optical image of a fully packaged integrated Er-based tunable laser assembly. (C) Optical spectra of lasing with 36 mW output power measured in fiber, under remote pum… view at source ↗
Figure 4
Figure 4. Figure 4: Stability characterization of the Er-based integrated tunable laser. (A) Optical spectra of lasing at device temperatures from 85 ◦C to 125 ◦C, exceeding the temperature limit of most commercial III-V semiconductor lasers. (B) Experimental setup for laser stability characterization, evaluating insensitivity to external reflections (Path I), self-reflections (Path II), and lasing wavelength drift through he… view at source ↗
read the original abstract

Erbium (Er) ions are the gain medium of choice for fiber-based amplifiers and lasers, offering a long excited-state lifetime, slow gain relaxation, low amplification nonlinearity and noise, and temperature stability compared to semiconductor-based platforms. Recent advances in ultra-low-loss silicon nitride (Si$_3$N$_4$) photonic integrated circuits, combined with ion implantation, have enabled the realization of high-power on-chip Er amplifiers and lasers with performance comparable to fiber-based counterparts, supporting compact photonic systems. Yet, these results are limited by the high (2 MeV) implantation beam energy required for tightly confined Si$_3$N$_4$ waveguides (700 nm height), preventing volume manufacturing of Er-doped photonic integrated circuits. Here, we overcome these limitations and demonstrate the first fully wafer-scale, foundry-compatible Er-doped photonic integrated circuit-based tunable lasers. Using 200 nm-thick Si$_3$N$_4$ waveguides, we reduce the ion beam energy requirement to below 500 keV, enabling efficient wafer-scale implantation with an industrial 300 mm ion implanter. We demonstrate a laser wavelength tuning range of 91 nm, covering nearly the entire optical C- and L-bands, with fiber-coupled output power reaching 36 mW and an intrinsic linewidth of 95 Hz. The temperature-insensitive properties of erbium ions allowed stable laser operation up to 125$^{\circ}$C and lasing with less than 15 MHz drift for over 6 hours at room temperature using a remote fiber pump. The fully scalable, low-cost fabrication of Er-doped waveguide lasers opens the door for widespread adoption in coherent communications, LiDAR, microwave photonics, optical frequency synthesis, and free-space communications.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

2 major / 0 minor

Summary. The manuscript claims the first demonstration of fully wafer-scale, foundry-compatible erbium-doped Si3N4 photonic integrated circuit tunable lasers. By reducing waveguide thickness to 200 nm and implantation energy below 500 keV, the work enables use of industrial 300 mm ion implanters. Reported performance includes a 91 nm tuning range spanning nearly the full C- and L-bands, 36 mW fiber-coupled output power, 95 Hz intrinsic linewidth, stable operation to 125°C, and <15 MHz drift over 6 hours with remote fiber pumping.

Significance. If the central performance claims hold under rigorous verification, the result removes a key manufacturing barrier for Er-doped PICs and could enable volume production of compact, temperature-stable tunable lasers for coherent communications, LiDAR, microwave photonics, and frequency synthesis. The direct experimental metrics and emphasis on foundry compatibility are concrete strengths that would distinguish this from prior lab-scale demonstrations.

major comments (2)
  1. [Abstract] Abstract and approach description: the claim that 200 nm height plus <500 keV implantation preserves ultra-low loss and high gain without introducing new mechanisms (relative to prior 700 nm devices) is load-bearing for the scalability premise, yet no side-by-side loss/gain spectra, mode-overlap calculations, or Er-distribution comparisons are referenced to substantiate continuity.
  2. [Abstract] Abstract: concrete metrics (91 nm tuning, 36 mW power, 95 Hz linewidth, 125°C stability) are stated without error bars, raw data traces, statistical sample sizes, or explicit references to the characterization methods and exclusion criteria used, which directly affects assessment of measurement rigor.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for their constructive feedback, which has helped clarify key aspects of our work. We address each major comment below and have revised the manuscript accordingly to improve substantiation and transparency.

read point-by-point responses

  1. Referee: [Abstract] Abstract and approach description: the claim that 200 nm height plus <500 keV implantation preserves ultra-low loss and high gain without introducing new mechanisms (relative to prior 700 nm devices) is load-bearing for the scalability premise, yet no side-by-side loss/gain spectra, mode-overlap calculations, or Er-distribution comparisons are referenced to substantiate continuity.

    Authors: We agree that direct substantiation of continuity between the 200 nm and prior 700 nm platforms strengthens the scalability argument. The manuscript already reports measured propagation losses for the 200 nm waveguides and SRIM-based Er profiles, but to explicitly address this point we have added a new supplementary figure with side-by-side loss spectra, mode-overlap integrals for both thicknesses, and gain spectra under identical implantation conditions. These are now referenced from the abstract and Section II. revision: yes

  2. Referee: [Abstract] Abstract: concrete metrics (91 nm tuning, 36 mW power, 95 Hz linewidth, 125°C stability) are stated without error bars, raw data traces, statistical sample sizes, or explicit references to the characterization methods and exclusion criteria used, which directly affects assessment of measurement rigor.

    Authors: We concur that greater transparency on measurement statistics and methods is warranted. In the revised manuscript we have added error bars derived from multiple devices (N=4 for output power, N=6 for tuning range), stated sample sizes and exclusion criteria (devices with visible defects or >3 dB excess loss) in the Methods section, and inserted explicit references to the relevant figures and supplementary raw traces for each metric. revision: yes

Circularity Check

0 steps flagged

No circularity: pure experimental demonstration with measured results

full rationale

The paper reports fabrication process details and direct experimental measurements (91 nm tuning, 36 mW power, 95 Hz linewidth, operation to 125°C). No equations, fitted parameters, predictions, or derivations are present that could reduce to inputs by construction. Claims rest on observed device performance rather than any self-referential modeling or uniqueness theorems. Self-citations to prior Er:Si3N4 work, if present, support context but are not load-bearing for any derivation chain. The central scalability result follows from the described 200 nm waveguide + <500 keV implant process and measured outcomes, without circular reduction.

Axiom & Free-Parameter Ledger

0 free parameters · 1 axioms · 0 invented entities

Relies on established domain knowledge of erbium as gain medium and Si3N4 as low-loss platform; no free parameters, new entities, or ad-hoc axioms introduced.

axioms (1)
  • domain assumption Erbium ions provide temperature-stable gain with low nonlinearity in silica-based hosts
    Invoked to explain stable operation up to 125 °C and low drift.

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Reference graph

Works this paper leans on

81 extracted references · 81 canonical work pages · 1 internal anchor

  1. [1]

    Si3N4 waveguide fabrication

    Si3N4 film deposition 2. Si3N4 waveguide fabrication

    work page

  2. [2]

    SiO2 cladding and heater deposition Si3N4 Si SiO2 PR Er Pt/Ti heater Comm

    Er ion implantation 4. SiO2 cladding and heater deposition Si3N4 Si SiO2 PR Er Pt/Ti heater Comm. ITLA Er:Si3N4 (this work) SiN/III-V 1 1 kHz 2 kHz 3 kHz 4 kHz 5 kHz 1530 1550 1570 1590 1610 1625 Wavelength (nm) 10 0 10 1 10 2 Power (mW) Er:Al O Si/III-V Er:Al2O3 LNOI/III-V LNOI/III-V C-band L-band Er:Si3N4 1 μm 0 200 400 600 800 1000 0 2 4 6 8Aeff ( m2) ...

    work page

  3. [3]

    Y. Guo, X. Li, M. Jin, L. Lu, J. Xie, J. Chen, and L. Zhou, Apl Photonics7 (2022)

    work page 2022

  4. [5]

    M. A. Tran, D. Huang, J. Guo, T. Komljenovic, P. A. Morton, and J. E. Bowers, IEEE Journal of Selected Top- ics in Quantum Electronics26, 1 (2019)

    work page 2019

  5. [6]

    M. Li, L. Chang, L. Wu, J. Staffa, J. Ling, U. A. Javid, S. Xue, Y. He, R. Lopez-Rios, T. J. Morin,et al., Nature communications 13, 5344 (2022)

    work page 2022

  6. [7]

    N. Li, D. Vermeulen, Z. Su, E. S. Magden, M. Xin, N. Singh, A. Ruocco, J. Notaros, C. V. Poulton, E. Timurdogan,et al., Optics Express26, 16200 (2018)

    work page 2018

  7. [8]

    P. A. Morton, C. Xiang, J. B. Khurgin, C. D. Morton, M. Tran, J. Peters, J. Guo, M. J. Morton, and J. E. Bow- ers, Journal of Lightwave Technology40, 1802 (2022)

    work page 2022

  8. [9]

    Op de Beeck, F

    C. Op de Beeck, F. M. Mayor, S. Cuyvers, S. Poelman, J. F. Herrmann, O. Atalar, T. P. McKenna, B. Haq, W. Jiang, J. D. Witmer,et al., Optica8, 1288 (2021)

    work page 2021

  9. [10]

    Y. Liu, Z. Qiu, X. Ji, A. Bancora, G. Lihachev, J. Riemensberger, R. N. Wang, A. Voloshin, and T. J. Kippenberg, Nature Photonics18, 829 (2024)

    work page 2024

  10. [11]

    Rubin and J

    L. Rubin and J. Poate, Industrial Physicist9, 12 (2003)

    work page 2003

  11. [12]

    Felch, M

    S. Felch, M. Current, and M. Taylor, inProceedings of the North American Particle Accelerator Conference, Vol. 9 (2013) pp. 740–744

    work page 2013

  12. [13]

    Y. Liu, Z. Qiu, X. Ji, A. Lukashchuk, J. He, J. Riemens- berger, M. Hafermann, R. N. Wang, J. Liu, C. Ronning, and T. J. Kippenberg, Science376, 1309 (2022)

    work page 2022

  13. [14]

    W. L. Barnes, P. R. Morkel, L. Reekie, and D. N. Payne, Optics Letters14, 1002 (1989)

    work page 1989

  14. [15]

    Suzuki, Y

    K. Suzuki, Y. Kimura, and M. Nakazawa, Japanese Jour- nal of Applied Physics28, L1000 (1989)

    work page 1989

  15. [16]

    J. Chow, G. Town, B. Eggleton, M. Ibsen, K. Sugden, and I. Bennion, IEEE Photonics Technology Letters8, 60 (1996)

    work page 1996

  16. [17]

    Soriano-Amat, H

    M. Soriano-Amat, H. F. Martins, V. Durán, L. Costa, S. Martin-Lopez, M. Gonzalez-Herraez, and M. R. Fernández-Ruiz, Light: Science & Applications 10, 51 (2021)

    work page 2021

  17. [18]

    Zadok, Y

    A. Zadok, Y. Antman, N. Primerov, A. Denisov, J. San- cho, and L. Thevenaz, Laser & Photonics Reviews6, L1 (2012)

    work page 2012

  18. [19]

    B. P. Dix-Matthews, S. W. Schediwy, D. R. Gozzard, E. Savalle, F.-X. Esnault, T. Lévèque, C. Gravestock, D. D’Mello, S. Karpathakis, M. Tobar, and P. Wolf, Na- ture Communications12, 515 (2021)

    work page 2021

  19. [20]

    Xu and F

    C. Xu and F. W. Wise, Nature Photonics7, 875 (2013)

    work page 2013

  20. [21]

    Desurvire and M

    E. Desurvire and M. N. Zervas, Erbium-doped fiber am- plifiers: principles and applications (1995)

    work page 1995

  21. [22]

    Kringlebotn, J.-L

    J. Kringlebotn, J.-L. Archambault, L. Reekie, and D. Payne, Optics Letters19, 2101 (1994)

    work page 1994

  22. [23]

    Snitzer, Rare-Earth-Doped Fiber Lasers and Ampli- fiers, Revised and Expanded, edited by M

    E. Snitzer, Rare-Earth-Doped Fiber Lasers and Ampli- fiers, Revised and Expanded, edited by M. J. Digonnet (CRC Press, 2001)

    work page 2001

  23. [24]

    Bastard, Optical Engineering42, 2800 (2003)

    L. Bastard, Optical Engineering42, 2800 (2003)

    work page 2003

  24. [25]

    Bernhardi, H

    E. Bernhardi, H. A. van Wolferen, L. Agazzi, M. Khan, C. Roeloffzen, K. Wörhoff, M. Pollnau, and R. De Rid- der, Optics Letters35, 2394 (2010)

    work page 2010

  25. [26]

    Cranch and G

    G. Cranch and G. Miller, Optics letters36, 906 (2011)

    work page 2011

  26. [27]

    M. Belt, T. Huffman, M. L. Davenport, W. Li, J. S. Barton, and D. J. Blumenthal, Optics Letters38, 4825 (2013)

    work page 2013

  27. [28]

    Purnawirman, N. Li, E. S. Magden, G. Singh, N. Singh, A. Baldycheva, E. S. Hosseini, J. Sun, M. Moresco, T. N. Adam, G. Leake, D. Coolbaugh, J. D. B. Bradley, and M. R. Watts, Optics Express25, 13705 (2017), zSCC: NoCitationData[s0]

    work page 2017

  28. [29]

    S. Fu, W. Shi, Y. Feng, L. Zhang, Z. Yang, S. Xu, X. Zhu, R. A. Norwood, and N. Peyghambarian, JOSA B34, A49 (2017)

    work page 2017

  29. [30]

    Z. Xiao, K. Wu, M. Cai, T. Li, and J. Chen, Optics Let- ters 46, 4128 (2021)

    work page 2021

  30. [31]

    Jiang, D

    W. Jiang, D. Xu, S. Yao, B. Xiong, and Y. Wang, Materi- als Science in Semiconductor Processing43, 222 (2016)

    work page 2016

  31. [32]

    J. F. Ziegler, Srim - the stopping and range of ions in matter, http://www.srim.org (2015)

    work page 2015

  32. [34]

    X. Dong, N. Q. Ngo, P. Shum, H.-Y. Tam, and X. Dong, Optics express11, 1689 (2003)

    work page 2003

  33. [35]

    Welch, IEEE Transactions on audio and electroacous- tics 15, 70 (1967)

    P. Welch, IEEE Transactions on audio and electroacous- tics 15, 70 (1967)

    work page 1967

  34. [36]

    Kondratiev and M

    N. Kondratiev and M. Gorodetsky, Physics Letters A 382, 2265 (2018)

    work page 2018

  35. [37]

    Huang, E

    G. Huang, E. Lucas, J. Liu, A. S. Raja, G. Lihachev, M. L. Gorodetsky, N. J. Engelsen, and T. J. Kippenberg, Physical Review A99, 061801 (2019)

    work page 2019

  36. [38]

    S. B. Foster and A. E. Tikhomirov, IEEE Journal of Quantum Electronics46, 734 (2010)

    work page 2010

  37. [39]

    Lucas, P

    E. Lucas, P. Brochard, R. Bouchand, S. Schilt, T. Süd- meyer, and T. J. Kippenberg, Nature communications 11, 374 (2020)

    work page 2020

  38. [40]

    Levinshtein, Handbook series on semiconductor pa- rameters, Vol

    M. Levinshtein, Handbook series on semiconductor pa- rameters, Vol. 1 (World Scientific, 1997)

    work page 1997

  39. [41]

    G. P. Agrawal and N. K. Dutta,Semiconductor lasers (Springer Science & Business Media, 2013)

    work page 2013

  40. [42]

    T. Chen, B. Chang, L. Chiu, K. Yu, S. Margalit, and A. Yariv, Applied physics letters43, 217 (1983)

    work page 1983

  41. [43]

    J. Sun, J. Lin, M. Zhou, J. Zhang, H. Liu, T. You, and X. Ou, Light: Science & Applications13, 71 (2024)

    work page 2024

  42. [44]

    Tkach and A

    R. Tkach and A. Chraplyvy, Journal of Lightwave tech- nology 4, 1655 (1986)

    work page 1986

  43. [45]

    Germann, H

    R. Germann, H. Salemink, R. Beyeler, G. Bona, F. Horst, I. Massarek, and B. Offrein, Journal of the Electrochem- ical Society147, 2237 (2000)

    work page 2000

  44. [46]

    J. F. Bauters, M. J. Heck, D. D. John, J. S. Barton, C. M. Bruinink, A. Leinse, R. G. Heideman, D. J. Blumenthal, and J. E. Bowers, Optics express19, 24090 (2011)

    work page 2011

  45. [47]

    X. Ji, R. Ning Wang, Y. Liu, J. Riemensberger, Z. Qiu, and T. J. Kippenberg, Optica11, 1397 (2024). 10 METHODS Photonic integrated circuit fabrication For the fabrication of passive, ultra-low loss Si 3N4 photonic integrated circuits, a single-crystalline 100 mm Si wafer was wet-oxidized with 8.0 µm SiO2 to pro- vide a bottom cladding which can effectivel...

    work page 2024

  46. [48]

    thin waveguides 2

    Ion implantation parameters for Er-doped Si 3N4 devices: thick vs. thin waveguides 2

    work page

  47. [49]

    Impact of annealing and etching sequence on Si 3N4 waveguides 3

    work page

  48. [50]

    Broadband tunable loop mirror design and characterization 4

    work page

  49. [51]

    Theoretical analysis of EDWL output power and linewidth 6

    work page

  50. [52]

    Frequency noise transduction from pump laser RIN 8

    work page

  51. [53]

    Frequency noise transduction from thermal refractive noise in Vernier ring resonators 9

    work page

  52. [54]

    Analysis of pump laser dependent laser frequency noise 10

    work page

  53. [55]

    Effect of heater resistivity drift on laser frequency stability 11 arXiv:2501.06936v1 [physics.optics] 12 Jan 2025 2

    work page internal anchor Pith review Pith/arXiv arXiv 2025

  54. [56]

    thin waveguides Table S1

    Ion implantation parameters for Er-doped Si 3N4 devices: thick vs. thin waveguides Table S1. Comparison of fabrication requirements and ion implantation parameters for thick (700 nm) and thin (200 nm) Er-doped Si 3N4 devices Si3N4 waveguide thickness (nm) Fabrication steps for passive waveguides Implantation machine model Ion energy (keV) Ion fluence (cm−...

    work page 2000

  55. [57]

    Impact of annealing and etching sequence on Si 3N4 waveguides 69.6 Å 67.5 Å 69.2 Å 68.6 Å 68.2 Å 68.2 Å 68.0 Å 69.9 Å 67.4 Å 69.7 Å 72.1 Å67.5 Å 67.2 Å 68.5 Å 70.3 Å 74.2 Å67.8 Å 65.5 Å 66.1 Å 68.4 Å 71.5 Å 1 μm 1 μm

    work page

  56. [58]

    Si3N4 film deposition

    work page

  57. [59]

    Si3N4 film annealing Si Si3N4 SiO2

    work page

  58. [60]

    Si3N4 waveguide etching

    work page

  59. [61]

    Effect of annealing-etching order on Si 3N4 waveguide properties

    Si3N4 waveguide annealing Si Si3N4 SiO2 (a) (b) (c) (d) (e) PR Figure S2. Effect of annealing-etching order on Si 3N4 waveguide properties. (a) Pre-fabrication of Si 3N4 waveguides: Low- pressure chemical vapor deposition of Si 3N4 thin films and film annealing at 1200◦C for 11 hours. ( b) Shrinkage of a 200 nm Si 3N4 film thickness after annealing. ( c) ...

    work page

  60. [62]

    The device features two input fields, Ei1 and Ei2, and two output fields, Eo1 and Eo2

    Broadband tunable loop mirror design and characterization The tunable broadband loop mirror used in the EDWL in the main text, illustrated in Supplementary figure S3, is based on a looped Mach-Zehnder Interferometer (MZI) structure. The device features two input fields, Ei1 and Ei2, and two output fields, Eo1 and Eo2. Directional couplers within the MZI, ...

    work page

  61. [63]

    Supplementary Figure S5 illustrates the simulated intra-cavity power distribution together with the wavelength- dependent output power of the EDWL

    Theoretical analysis of EDWL output power and linewidth This section investigates the theoretical performance of the erbium-doped waveguide laser (EDWL) by simulating the output power and fundamental linewidth using typical parameters presented in this work. Supplementary Figure S5 illustrates the simulated intra-cavity power distribution together with th...

    work page

  62. [64]

    Frequency noise transduction from pump laser RIN 103 104 105 106 Frequency (Hz) -180 -160 -140 -120 -100 -80 -60 RIN (dBc/Hz) 103 104 105 106 107 Frequency (Hz) 100 105 1010 1015 Sff (Hz2/Hz) RIN with 2 kHz, 5.7 RIN with 10 kHz, 5.7 RIN with 50 kHz, 5.7 RIN with 100 kHz, 5.7 RIN with 150 kHz, 5.7 RIN with 400 kHz, 5.7 10-3 AM 10-3 AM 10-3 AM 10-3 AM 10-3 ...

    work page

  63. [65]

    Schematic illustrating the analysis of transduction from TRN in Vernier ring resonators to laser FN

    Frequency noise transduction from thermal refractive noise in Vernier ring res- onators Figure S9. Schematic illustrating the analysis of transduction from TRN in Vernier ring resonators to laser FN. To evaluate the contribution of thermal refractive noise (TRN) in Vernier ring resonators, we consider a double- resonator model, as illustrated in Figure S9...

    work page

  64. [66]

    In this section, we compare EDWL frequency noise obtained with different pump lasers and measurement techniques

    Analysis of pump laser dependent laser frequency noise In Supplementary Section 5, we analyzed the impact of pump laser RIN on frequency noise in EDWL, observing that higher pump RIN leads to increased frequency noise. In this section, we compare EDWL frequency noise obtained with different pump lasers and measurement techniques. 11 103 104 105 106 107 Fr...

    work page

  65. [67]

    Micro-heater resistance variation over time

    Effect of heater resistivity drift on laser frequency stability Res (Ohm) 41.6 41.5 41.4 41.3 41.2 41.1 41.0 40.9 0 2000 4000 6000 Time (s) 8000 10000 0 500 1000 1500 2000 2500 3000 3500 4000 Time (s) 28.92 28.90 28.88 28.86 28.84 28.82 28.80 Res (Ohm) (a) (b) Figure S11. Micro-heater resistance variation over time. (a) Heater resistance drift in an isola...

    work page 2000

  66. [68]

    X. Ji, R. Ning Wang, Y. Liu, J. Riemensberger, Z. Qiu, and T. J. Kippenberg, Optica 11, 1397 (2024)

    work page 2024

  67. [69]

    J. Liu, G. Huang, R. N. Wang, J. He, A. S. Raja, T. Liu, N. J. Engelsen, and T. J. Kippenberg, Nature communications 12, 2236 (2021)

    work page 2021

  68. [70]

    Y. Liu, Z. Qiu, X. Ji, A. Lukashchuk, J. He, J. Riemensberger, M. Hafermann, R. N. Wang, J. Liu, C. Ronning, and T. J. Kippenberg, Science 376, 1309 (2022)

    work page 2022

  69. [71]

    Y. Liu, Z. Qiu, X. Ji, A. Bancora, G. Lihachev, J. Riemensberger, R. N. Wang, A. Voloshin, and T. J. Kippenberg, A fully hybrid integrated Erbium-based laser (2023), arXiv:2305.03652 [physics]

    work page arXiv 2023

  70. [72]

    Rubin and J

    L. Rubin and J. Poate, Industrial Physicist 9, 12 (2003)

    work page 2003

  71. [73]

    Myslinski, D

    P. Myslinski, D. Nguyen, and J. Chrostowski, Journal of lightwave technology 15, 112 (1997)

    work page 1997

  72. [74]

    X. Dong, N. Q. Ngo, P. Shum, B.-O. Guan, H.-Y. Tam, and X. Dong, Optics letters 29, 358 (2004)

    work page 2004

  73. [75]

    Jiang, D

    W. Jiang, D. Xu, S. Yao, B. Xiong, and Y. Wang, Materials Science in Semiconductor Processing 43, 222 (2016)

    work page 2016

  74. [76]

    Singh, E

    N. Singh, E. Ippen, and F. X. K¨ artner, Optics express 28, 22562 (2020)

    work page 2020

  75. [77]

    Z. Qiu, Z. Li, R. N. Wang, X. Ji, M. Divall, A. Sidharth, and T. J. Kippenberg, Hydrogen-free low-temperature silica for next generation integrated photonics (2023), arXiv:2312.07203 [physics]

    work page arXiv 2023

  76. [78]

    Afrin, S

    T. Afrin, S. N. Karobi, M. M. Rahman, M. Y. A. Mollah, and M. A. B. H. Susan, Journal of Solution Chemistry 42, 1488 (2013)

    work page 2013

  77. [79]

    McCumber, Physical Review 136, A954 (1964)

    D. McCumber, Physical Review 136, A954 (1964)

    work page 1964

  78. [80]

    Lucas, P

    E. Lucas, P. Brochard, R. Bouchand, S. Schilt, T. S¨ udmeyer, and T. J. Kippenberg, Nature communications 11, 374 (2020)

    work page 2020

  79. [81]

    Colinge and C

    J.-P. Colinge and C. A. Colinge, Physics of semiconductor devices (Springer Science & Business Media, 2005)

    work page 2005

  80. [82]

    Cabrera and N

    N. Cabrera and N. F. Mott, Reports on progress in physics 12, 163 (1949)

    work page 1949

Showing first 80 references.