Typed states for the displayed outbound observations.
Source: paper_references, paper_reference_links, observed 2026-08-10T15:50:16.849085Z
Paper Citation Record · LEDGER
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers
As of 18 August 2026, this Paper Citation Record lists 31 of 31 outbound references and 0 inbound Pith citation observations for arXiv:2501.13634.
A citation records a reference. It does not transfer a finding from one paper to another.
Coverage vector
One-hop event checks from named stored sources.
Source: scholarly_work_events, retraction_status_cache, observed 2026-08-17T06:30:58.91139+00:00
Pith citing papers itemized under the disclosed page cap.
Source: paper_references, paper_reference_links
A source-named dated measurement, never combined with another source.
Source: cited_works
Reference resolution
31 of 31 outbound references displayed
- verified exact25
- verified fuzzy2
- unresolved2
- parse uncertain0
- malformed identifier1
- metadata mismatch1
External citation measurements
No source-named external measurement is stored.
Outbound references
Observation 1656049d-d304-4c01-969a-6d587d450d91 · outbound
This paper cites InAs on Insulator: A New Platform for Cryogenic Hybrid Superconducting Electronics.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers InAs on Insulator: A New Platform for Cryogenic Hybrid Superconducting Electronics
Reference 1
- Resolution
- unresolved
- no resolver link, observed 2026-08-10T15:50:16.710497Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation 455346e0-c051-4dcd-b57f-0ae5b293c38e · outbound
This paper cites Epitaxial indium arsenide by vacuum evaporation.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Epitaxial indium arsenide by vacuum evaporation
Reference 2
- Resolution
- verified exact
- doi, observed 2026-08-10T15:50:17.243272Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 399445cc-26b9-43df-abe3-e6588ca28245 · outbound
This paper cites Epitaxial InAs on Semi-Insulating GaAs Substrate.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Epitaxial InAs on Semi-Insulating GaAs Substrate
Reference 3
- Resolution
- verified exact
- doi, observed 2026-08-10T15:50:17.229398Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 0a4ab8b4-cc36-4a6d-a439-5056f10ff9bd · outbound
This paper cites Preparation and properties of epitaxial InAs.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Preparation and properties of epitaxial InAs
Reference 4
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-10T15:50:17.536593Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation d272577b-10e8-48d7-871d-8e7223c4df5a · outbound
This paper cites Molecular Beam Epitaxial Growth of InAs.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Molecular Beam Epitaxial Growth of InAs
Reference 5
- Resolution
- verified exact
- doi, observed 2026-08-10T15:50:17.200121Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation baaa5efa-1648-4838-a00b-7c6e8bda4ccb · outbound
This paper cites Thin InAs epitaxial layers grown on (100) GaAs sub- strates by molecular beam deposition.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Thin InAs epitaxial layers grown on (100) GaAs sub- strates by molecular beam deposition
Reference 6
- Resolution
- verified exact
- doi, observed 2026-08-10T15:50:17.185361Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 3eaf81d0-286c-4b33-aaf8-d817b282b432 · outbound
This paper cites Growth and transport properties of InAs epilayers on GaAs.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Growth and transport properties of InAs epilayers on GaAs
Reference 7
- Resolution
- verified exact
- doi, observed 2026-08-10T15:50:17.171420Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 9465d0a1-988e-42b4-a23f-d8ba23bf0fab · outbound
This paper cites Electrical and magneto-optical of MBE InAs on GaAs.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Electrical and magneto-optical of MBE InAs on GaAs
Reference 8
- Resolution
- verified exact
- doi, observed 2026-08-10T15:50:17.158501Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation bc35b4ec-b1aa-474f-afac-b0736a39fd48 · outbound
This paper cites InGaN quantum well with grad- ually varying indium content for high-efficiency GaN-based green light-emitting diodes.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers InGaN quantum well with grad- ually varying indium content for high-efficiency GaN-based green light-emitting diodes
Reference 9
- Resolution
- verified exact
- doi, observed 2026-08-10T15:50:17.144716Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 5a4c1492-174f-4b9c-9efa-8f4c6ec1409f · outbound
This paper cites Quantum cascade lasers grown by MOCVD.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Quantum cascade lasers grown by MOCVD
Reference 10
- Resolution
- verified exact
- doi, observed 2026-08-10T15:50:17.130192Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 61783608-05f2-46f0-bf04-ceaada2e29b7 · outbound
This paper cites Heteroepitaxial Growth of III-V Semiconductors on Sil- icon.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Heteroepitaxial Growth of III-V Semiconductors on Sil- icon
Reference 11
- Resolution
- verified exact
- doi, observed 2026-08-10T15:50:17.115868Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 5178a8c5-ca77-408d-a332-f554a556c65d · outbound
This paper cites Heteroepitaxial InAs Grown on GaAs from Triethylindium and Ar- sine: I.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Heteroepitaxial InAs Grown on GaAs from Triethylindium and Ar- sine: I
Reference 12
- Resolution
- verified exact
- doi, observed 2026-08-10T15:50:17.100581Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 29fc0712-1473-4b8f-96a7-a77afb136b8f · outbound
This paper cites Characterization of very high purity InAs grown using trimethylindium and tertiarybutylarsine.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Characterization of very high purity InAs grown using trimethylindium and tertiarybutylarsine
Reference 13
- Resolution
- verified exact
- doi, observed 2026-08-10T15:50:17.086251Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation c6a45f95-69fa-48f5-8920-186df6c908a0 · outbound
This paper cites Electrical characterization of InAs thin films.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Electrical characterization of InAs thin films
Reference 14
- Resolution
- verified exact
- doi, observed 2026-08-10T15:50:17.071498Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 7cd9f53e-6cbe-48cf-9ee3-64ae57dd6864 · outbound
This paper cites Electron mobility in plastically deformed Germanium.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Electron mobility in plastically deformed Germanium
Reference 15
- Resolution
- verified exact
- doi, observed 2026-08-10T15:50:17.056158Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 9b4f90ca-8efb-4660-8a98-ec5adf2f2f8f · outbound
This paper cites Effect of lattice mismatch on the electron mobilities of InAs grown on GaAs by MBE.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Effect of lattice mismatch on the electron mobilities of InAs grown on GaAs by MBE
Reference 16
- Resolution
- verified exact
- doi, observed 2026-08-10T15:50:17.040798Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 264bce07-38be-40df-a024-f7adcad9dc6e · outbound
This paper cites Influence of an Overshoot Layer on the Morphological, Structural, Strain, and Transport Proper- ties of InAs Quantum Wells.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Influence of an Overshoot Layer on the Morphological, Structural, Strain, and Transport Proper- ties of InAs Quantum Wells
Reference 17
- Resolution
- unresolved
- no resolver link, observed 2026-08-10T15:50:16.788877Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation c1580903-3cc8-47a1-ad86-f6e588388c54 · outbound
This paper cites Interdiffusion be- tween InAs Quantum Dots and GaAs Matrices.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Interdiffusion be- tween InAs Quantum Dots and GaAs Matrices
Reference 18
- Resolution
- verified exact
- doi, observed 2026-08-10T15:50:17.015661Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 5a5b9eab-cb70-4ef0-b6a9-55ee15b9ccdd · outbound
This paper cites Initial growth stage and optical properties of a three-dimensional InAs structure on GaAs.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Initial growth stage and optical properties of a three-dimensional InAs structure on GaAs
Reference 19
- Resolution
- verified exact
- doi, observed 2026-08-10T15:50:17.000909Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 8435875c-d789-4f06-a596-6d96e1fcf08a · outbound
This paper cites Available online: https://www.ioffe.ru/SVA/NSM/Semicond/InAs/mechanic.html.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Available online: https://www.ioffe.ru/SVA/NSM/Semicond/InAs/mechanic.html
Reference 20
- Resolution
- verified fuzzy
- raw_fallback, observed 2026-08-10T15:50:17.522145Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation ee7d173d-fc69-437a-88e4-916957fe95c4 · outbound
This paper cites Metamorphic InAs/InGaAs QWs with electron mobilities exceeding 7 × 105 cm2/Vs.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Metamorphic InAs/InGaAs QWs with electron mobilities exceeding 7 × 105 cm2/Vs
Reference 21
- Resolution
- metadata mismatch
- raw_fallback, observed 2026-08-10T15:50:17.507894Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 45d53199-a252-4d46-8f68-1dbfd2d3e8a5 · outbound
This paper cites Geometrical theory of critical thickness and relaxation in strained-layer growth.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Geometrical theory of critical thickness and relaxation in strained-layer growth
Reference 22
- Resolution
- verified exact
- doi, observed 2026-08-10T15:50:16.985664Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 57bb6c29-ccc1-477b-99fe-512494357c0c · outbound
This paper cites The measurement of threading dislocation densities in semiconductor crystals by X- ray diffraction.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers The measurement of threading dislocation densities in semiconductor crystals by X- ray diffraction
Reference 23
- Resolution
- malformed identifier
- no resolver link, observed 2026-08-10T15:50:16.817651Z
Source-reported events for the cited work
Unavailable: canonical work link unavailable.
Observation c85202d2-6e5a-4076-99dc-fe947d719204 · outbound
This paper cites Nachrichten von der Gesellschaft der Wissenschaften zu Göttingen, Mathematisch- Physikalische Klasse 1918, 2, 98 –100.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Nachrichten von der Gesellschaft der Wissenschaften zu Göttingen, Mathematisch- Physikalische Klasse 1918, 2, 98 –100
Reference 24
- Resolution
- verified exact
- raw_fallback, observed 2026-08-10T15:50:17.425161Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 883b9e75-35c7-47f1-b83d-cb4d0e253053 · outbound
This paper cites Temperature- dependent transport properties of InAs films grown on lattice-mismatched GaP.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Temperature- dependent transport properties of InAs films grown on lattice-mismatched GaP
Reference 25
- Resolution
- verified exact
- doi, observed 2026-08-10T15:50:16.960943Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation acc1a041-4274-468d-8907-b7383f6cc80c · outbound
This paper cites Transport properties of InSb and InAs thin films on GaAs substrates.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Transport properties of InSb and InAs thin films on GaAs substrates
Reference 26
- Resolution
- verified exact
- doi, observed 2026-08-10T15:50:16.945499Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 954be041-1057-48cd-b7a9-a3c0235307e5 · outbound
This paper cites Thickness depend- ence of the structural and electrical properties of InAs layers epitaxially grown by MBE on GaAs (001).
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Thickness depend- ence of the structural and electrical properties of InAs layers epitaxially grown by MBE on GaAs (001)
Reference 27
- Resolution
- verified exact
- doi, observed 2026-08-10T15:50:16.931300Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 3b6ad34c-429c-4dcd-a62b-391350749a8b · outbound
This paper cites Theory of an experiment for measuring the mobility and density of carriers in the space-charge region of a semiconductor surface.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Theory of an experiment for measuring the mobility and density of carriers in the space-charge region of a semiconductor surface
Reference 28
- Resolution
- verified exact
- doi, observed 2026-08-10T15:50:16.917113Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 204cd9d4-df33-42d5-b7c9-18952043aae9 · outbound
This paper cites Zum Mechanismus der Widerstandsänderung im Magnetfeld.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Zum Mechanismus der Widerstandsänderung im Magnetfeld
Reference 29
- Resolution
- verified exact
- doi, observed 2026-08-10T15:50:16.901953Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation 34440bfc-3d98-4f3d-a6fb-650094309af4 · outbound
This paper cites Transport coefficients of InAs epilayers.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Transport coefficients of InAs epilayers
Reference 30
- Resolution
- verified exact
- doi, observed 2026-08-10T15:50:16.886292Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Observation a837bc01-376d-4ab4-80aa-952c122c3597 · outbound
This paper cites an unresolved cited work.
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers Unresolved cited work
Reference 655
- Resolution
- verified exact
- doi, observed 2026-08-10T15:50:17.214958Z
Source-reported events for the cited work
No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.
Pith citing papers
No inbound Pith citation observations are available.