Pith. sign in

REVIEW 2 major objections 6 minor 45 references

Competition between excitonic insulators and quantum Hall states in correlated electron-hole bilayers

T0 review · 2 major / 6 minor · reviewed 2026-08-10 · deepseek-v4-flash

Challenge this review Re-run · record.json Download PDF Read on arXiv ↗

Pith's one-line read This paper reports the observation of excitonic quantum oscillations in Coulomb drag and resistance of MoSe2/hBN/WSe2 electron-hole bilayers, and quantum phase transitions between the excitonic insulator and bilayer quantum Hall insulator…

desk verdict First experimental report of magnetic-field-driven excitonic quantum oscillations and EI-QHI transitions in a TMD bilayer; the data are credible, the integer-filling phase boundary interpretation has a real edge-channel caveat. read the letter →

arxiv 2501.18168 v1 pith:WFR7J3D6 submitted 2025-01-30 cond-mat.mes-hall cond-mat.str-el

Ruishi Qi , Qize Li , Zuocheng Zhang , Zhiyuan Cui , Bo Zou , Haleem Kim , Collin Sanborn , Sudi Chen
show 6 more authors
Jingxu Xie Takashi Taniguchi Kenji Watanabe Michael F. Crommie Allan H. MacDonald Feng Wang
This is my paper · ORCID
classification cond-mat.mes-hallcond-mat.str-el
keywords excitonicinsulatorCoulombdragquantumoscillationsHallelectron-holebilayerMoSe2/hBN/WSe2heterostructureLandauquantizationcharge-neutralline
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This paper claims that a magnetic field can tune the ground state of an excitonic insulator, a phase in which electrons and holes in separate layers bind into charge-neutral excitons. In MoSe2/hBN/WSe2 bilayers, the authors observe quantum oscillations in both the Coulomb drag current and the hole-layer resistance at fields above roughly five tesla, with periodicity in $1/B$. At stronger fields and higher exciton densities, the oscillations deepen until the excitonic insulator gives way to two independent quantum Hall insulators at integer Landau-level fillings. If correct, the result shows that insulating exciton fluids can show metallic-style quantum oscillations and that Landau quantization can reversibly dissociate interlayer excitons, making the bilayer a switchable platform for composite bosonic phases.

What carries the argument

The carrying object is the effective charge gap of the excitonic insulator, defined as the energy difference between the highest occupied and lowest unoccupied dressed Landau levels. An out-of-plane magnetic field quantizes the two-dimensional electron and hole gases; when the exciton filling factor approaches an integer, Landau quantization lowers the gap, which shows up as a $1/B$-periodic oscillation in both the drag ratio and the resistance. In the strong-field, high-density regime, the same oscillation can drive the gap to zero, turning the bound-exciton insulator into two decoupled quantum Hall insulators whose signatures are quantized hole resistance and a vanishing drag signal.

What would settle it

Measure the same charge-neutral line in a device with a Corbino or four-terminal geometry that removes the hole layer's quantum Hall edge channels, and check whether the drag ratio still drops to zero at filling factor five and whether the hole resistance remains quantized. If the dip disappears when edge shunting is suppressed, the claimed complete exciton dissociation at integer fillings is not established; if it survives, the EI-QHI transition is a bulk effect. A second check is to vary the hBN spacer thickness: the gap-oscillation mechanism predicts that the magnetic field at which the first drag dip appears should move with the interlayer exciton binding energy.

Watch

Extended reading notes

Core claim

The paper reports the first experimental observation that an excitonic insulator in a MoSe2/hBN/WSe2 electron-hole bilayer responds to a perpendicular magnetic field by developing quantum oscillations. Along the net charge-neutral line, both the Coulomb drag ratio and the hole-layer resistance oscillate with period $1/B$ at fields above about five tesla; at higher fields and higher pair densities the oscillations deepen until, at integer Landau-level fillings, the drag ratio falls to zero and the hole resistance becomes quantized at $h/\nu e^2$, marks of two independent integer quantum Hall insulators. The authors interpret these features as oscillations of the effective charge gap, which Landau quantization lowers whenever the exciton filling factor approaches an integer, and at high pair density can close completely and dissociate the excitons. They take the coexistence of large drag and a small deviation from perfect quantization at low integer fillings as evidence that Coulomb interactions mix Landau levels and stabilize excitonic pairing even inside the quantum Hall regime.

Load-bearing premise

The argument depends on treating the measured drag current and the two-terminal resistance along the charge-neutral line as faithful measures of the bulk exciton fluid: if the hole layer's quantized edge channels carry away a large fraction of the induced current when the Landau level is full, a zero drag ratio would not by itself prove that all excitons have dissociated.

Editorial extensions

If this is right

  • Quantum oscillations can appear in a correlated insulator: inside the excitonic insulator, both the Coulomb drag ratio and the hole resistance are periodic in $1/B$ even though the charge response is gapped.
  • At integer Landau fillings the magnetic field can fully destroy exciton binding, producing independent bilayer quantum Hall insulators with quantized resistance and zero drag.
  • Temperature acts like a knob on the same competition: heating melts the excitonic domes at low integer fillings and restores quantized quantum Hall plateaus.
  • Because the oscillation frequency tracks the pair density along the charge-neutral line, the fan diagram maps where cyclotron energy and exciton binding energy become comparable.
  • TMD-based electron-hole bilayers provide a tunable platform in which an insulating exciton fluid can be switched, by field, density, or temperature, between a bound-exciton phase and two independent Landau-quantized phases.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • Editorial extension: if the gap-oscillation mechanism is generic, other strongly coupled dipolar exciton systems should show the same $1/B$ drag oscillations once many-body screening reduces their binding energy; the authors observe this only in the TMD platform, not in other materials.
  • Implicit in their edge-channel picture: a zero drag ratio at integer fillings could also be produced if the induced hole current returns through the hole layer's quantum Hall edge channels instead of the measurement circuit, so four-terminal or Corbino drag measurements would decide whether the EI-QHI boundary is sharp or is partly an edge-shunting artifact.
  • Going beyond the paper, the depth of each drag dip as a function of field supplies a quantitative measure of exciton binding as a function of Landau index, which could be compared directly with exact-diagonalization calculations of Landau-level-mixed exciton energies.
  • The paper does not discuss it, but the same devices with a small electron-hole imbalance should test the predicted excitonic insulator states at filling-factor differences of one; the authors note that these states are absent, which is an immediate experimental target for theory.
Share X Bluesky LinkedIn Reddit HN

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

2 major / 6 minor

Summary. The manuscript reports transport experiments on MoSe2/hBN/WSe2 electron-hole bilayers under a perpendicular magnetic field. At zero field the device exhibits an excitonic insulator with perfect Coulomb drag. With field, the authors observe oscillations in the closed-circuit drag ratio and the two-terminal hole resistance along the charge-neutrality line, and at high field they identify multiple transitions between the excitonic insulator and bilayer quantum Hall insulator phases at integer Landau-level fillings. A fan diagram and finite-temperature measurements are presented as evidence for these transitions. The data are supported by a second device for resistance measurements only.

Significance. If the interpretation is correct, this is the first experimental observation of quantum oscillations in an excitonic insulator and of magnetic-field-driven dissociation of an excitonic insulator into two independent quantum Hall insulators, directly testing the predictions of Refs. [5,6]. The authors take care to rule out graphite-gate-induced oscillations via a capacitor model and to exclude interlayer tunnelling by measuring a lower-bound resistance of 40 GΩ. The central observation of oscillations in both drag and resistance is compelling. However, the uniqueness of the phase-transition assignment is compromised by edge-channel transport, which the authors themselves discuss qualitatively. For this reason, the significance of the paper is high if the edge-channel alternative can be eliminated, but the current evidence is insufficient to establish the phase transitions unambiguously.

major comments (2)
  1. [Electron-hole fluids in a strong magnetic field (Fig. 2e)] The identification of EI-QHI phase transitions at integer filling factors rests on the simultaneous vanishing of the drag ratio and the quantization of R_h to h/νe^2. The authors' own edge-channel model, introduced in the paragraph beginning 'A qualitative explanation can be built considering the quantized edge conducting channels...', shows that at integer filling the electron-layer edge channel can carry the drive current without coupling to bulk excitons, and the hole-layer edge channels can return a significant portion of the induced current to the other terminal without passing through the measurement circuit. Consequently, a zero drag ratio and quantized R_h are also consistent with a bulk that remains an excitonic insulator while edge channels dominate the transport. Because the central new claim is the existence of multiple EI-QHI phase transitions, a Corbino-geometry measurement, a four-terminal bulk-conductivity measurement, or an explicit quantitative treatment of the edge channels is needed to exclude this alternative. As presented, the phase boundaries in Figs. 2e, 3, and 4 are underdetermined.
  2. [Finite-temperature phase diagram (Fig. 4e-f)] The temperature-induced EI-QHI transitions are inferred from the rapid decrease of the drag ratio and the recovery of R_h quantization at temperatures of roughly 5 K (ν=3) and 2 K (ν=4). The same edge-channel alternative applies: the observed temperature dependence may reflect thermally activated hopping in edge channels or changes in contact resistance rather than a bulk phase transition. Without a bulk-sensitive measurement, the assignment of these features as thermally driven EI-QHI phase transitions is not unique. I therefore consider this a second instance of the same load-bearing issue.
minor comments (6)
  1. [Methods, Coulomb drag measurements] The definition of the drag ratio and the method for measuring I_drive should be stated explicitly; currently the reader must infer the drive current from the circuit diagram, and it is unclear whether I_drive is measured directly or computed from the excitation voltage and series resistance.
  2. [Electron-hole fluids in a strong magnetic field] The contact resistance is quoted as 2.4 kΩ in the text but as 2.2 kΩ in the Extended Data Fig. 3 caption; please reconcile these values.
  3. [Fig. 3c] The claim that the oscillations are periodic in 1/B is presented visually; a quantitative analysis (e.g., FFT or zero-crossing positions) would substantiate this periodicity and allow a comparison with the theoretical period.
  4. [Fig. 1h] The drag ratio color scale appears saturated at unity; error bars or a noise floor estimate would help readers assess the precision of the perfect-drag claim.
  5. [Extended Data Fig. 1] The statement that similar results are reproduced in device D2 is based only on R_h measurements; the text should clarify that drag measurements were not possible in D2.
  6. [Abstract] The term 'excitonic quantum oscillations' in the abstract might be more precise as 'quantum oscillations in an excitonic insulator'.

Circularity Check

0 steps flagged · score 2.0 of 10

No significant circularity: the central claims rest on measured transport data; overlapping-author theory refs are used only for qualitative comparison, not as fitted inputs.

full rationale

The paper's central observations are direct measurements: two-terminal hole resistance, closed-circuit Coulomb drag ratio, and their magnetic-field and temperature dependence. The zero-field EI phase is identified from large R_h and drag ratio near unity (Fig. 1f,h), and the magnetic-field data are raw measured quantities. The EI-QHI phase assignments along the charge-neutral line are based on the simultaneous disappearance of drag and quantization of R_h (Fig. 2e), which is an experimental criterion rather than a quantity derived from any fitted model. The qualitative edge-channel discussion explaining reduced drag ratios is an interpretive model, not a fitted input used to generate the phase boundaries. The comparison with refs 5 and 6, one of which has overlapping authorship, is explicitly qualitative ('agrees qualitatively with the theoretical predictions'), and ref 5 is from an independent group. No equation from ref 6 is used to define or predict the measured drag ratio or resistance values, so the observation does not reduce by construction to the cited theory. The exclusion of graphite-gate-induced oscillations uses a parameter-free capacitor model with stated assumptions and is a consistency check, not a fitted prediction. There are self-citations (refs 1, 4, and 6) used for device characterization, prior EI results, and theoretical interpretation, but they are not load-bearing in the sense of forcing the observed phase transitions. Any correctness concern about edge-channel shunting affecting the uniqueness of the EI-QHI interpretation is a measurement-interpretation issue, not circularity. Therefore the derivation chain is not circular; the score reflects only the presence of minor, non-load-bearing self-citations.

Assumptions & free parameters 0 free parameters · 4 assumptions · 0 invented entities

The central claims rest on experimental calibration and modeling assumptions rather than on fitted free parameters. No parameter is adjusted to produce the observations. The most important assumptions are the validity of zero-field optical density calibration at high field, the interpretation of drag current as a bulk exciton probe, and the applicability of the Hartree-Fock theory of refs 5 and 6 to this strongly interacting TMD system.

assumptions (4)
  • domain assumption Zero-field optical densities n_e and n_h, calibrated by reflection spectroscopy, remain valid at B = 12 T and define the charge-neutral line and filling factors.
    The assignment of integer fillings and the CNL in Figs. 2-4 depends on these densities; the capacitor model in Extended Data Fig. 4 is used to convert gate voltages to densities. If the density calibration changes under field, the phase labels shift.
  • domain assumption Closed-circuit drag current in the WSe2 layer is a quantitative measure of interlayer exciton transport despite parallel edge-channel paths.
    The paper's own text says part of the induced current returns through edge channels and is not measured, and the correction is only qualitative. The conclusion that zero drag at integer fillings means complete exciton dissociation relies on this assumption.
  • domain assumption The theoretical Hartree-Fock picture of refs. 5 and 6 captures the competition between exciton binding and Landau quantization in TMD bilayers.
    The paper interprets its observed phases as agreement with these predictions, while noting discrepancies in critical field and in the absence of unequal-filling EI states. The mapping from theory to experiment is therefore approximate.
  • domain assumption Graphite gates have carrier densities near 10^13 cm^-2, so any graphite-gate-induced potential oscillations occur at a much different frequency and do not explain the data.
    The authors use the capacitor model in Extended Data Fig. 4 to rule out gate artifacts; this depends on the gate densities being much larger than TMD densities, as modeled.

how reviews work

0 comments
Cite this review

Pith. "Pith review of Competition between excitonic insulators and quantum Hall states in correlated electron-hole bilayers." pith.science (2026). https://pith.science/paper/WFR7J3D6

@misc{pith2026250118168,
  author       = {Pith},
  title        = {Pith review of: Competition between excitonic insulators and quantum Hall states in correlated electron-hole bilayers},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/WFR7J3D6}},
  note         = {Machine review of arXiv:2501.18168}
}
read the original abstract

Excitonic insulators represent a unique quantum phase of matter, providing a rich ground for studying exotic quantum bosonic states. Strongly coupled electron-hole bilayers, which host stable dipolar exciton fluids with an exciton density that can be adjusted electrostatically, offer an ideal platform to investigate correlated excitonic insulators. Based on electron-hole bilayers made of MoSe2/hBN/WSe2 heterostructures, here we study the behavior of excitonic insulators in a perpendicular magnetic field. We report the observation of excitonic quantum oscillations in both Coulomb drag signals and electrical resistance at low to medium magnetic fields. Under a strong magnetic field, we identify multiple quantum phase transitions between the excitonic insulator phase and the bilayer quantum Hall insulator phase. These findings underscore the interplay between the electron-hole interactions and Landau level quantization that opens new possibilities for exploring quantum phenomena in composite bosonic insulators.

Discussion (0). Continue with ORCID to comment.

Reference graph

Works this paper leans on

45 extracted references · 42 canonical work pages

  1. [1]

    Qi, R. et al. Thermodynamic behavior of correlated electron-hole fluids in van der Waals heterostructures. Nat. Commun. 14, 8264 (2023)

    work page 2023

  2. [2]

    Ma, L. et al. Strongly correlated excitonic insulator in atomic double layers. Nature 598, 585–589 (2021)

    work page 2021

  3. [3]

    Nguyen, P. X. et al. Perfect Coulomb drag in a dipolar excitonic insulator. Preprint at https://doi.org/10.48550/arXiv.2309.14940 (2023)

    arXiv doi:10.48550/arxiv.2309.14940 2023

  4. [4]

    Qi, R. et al. Perfect Coulomb drag and exciton transport in an excitonic insulator. Preprint at https://doi.org/10.48550/arXiv.2309.15357 (2023)

    work page Pith review arXiv doi:10.48550/arxiv.2309.15357 2023

  5. [5]

    & Dai, X

    Shao, Y. & Dai, X. Quantum oscillations in an excitonic insulating electron-hole bilayer. Phys. Rev. B 109, 155107 (2024)

    work page 2024

  6. [6]

    Zou, B., Zeng, Y., MacDonald, A. H. & Strashko, A. Electrical control of two-dimensional electron-hole fluids in the quantum Hall regime. Phys. Rev. B 109, 085416 (2024)

    work page 2024

  7. [7]

    & MacDonald, A

    Zeng, Y. & MacDonald, A. H. Electrically controlled two-dimensional electron-hole fluids. Phys. Rev. B 102, 085154 (2020)

    work page 2020

  8. [8]

    & MacDonald, A

    Wu, F.-C., Xue, F. & MacDonald, A. H. Theory of two-dimensional spatially indirect equilibrium exciton condensates. Phys. Rev. B 92, 165121 (2015)

    work page 2015

Show all 45 references
  1. [9]

    & Senatore, G

    De Palo, S., Rapisarda, F. & Senatore, G. Excitonic Condensation in a Symmetric Electron- Hole Bilayer. Phys. Rev. Lett. 88, 206401 (2002)

    2002

  2. [10]

    M., Butov, L

    Fogler, M. M., Butov, L. V. & Novoselov, K. S. High-temperature superfluidity with indirect excitons in van der Waals heterostructures. Nat. Commun. 5, 4555 (2014)

    2014

  3. [11]

    Liu, X., Watanabe, K., Taniguchi, T., Halperin, B. I. & Kim, P. Quantum Hall drag of exciton condensate in graphene. Nat. Phys. 13, 746–750 (2017)

    2017

  4. [12]

    Eisenstein, J. P. & MacDonald, A. H. Bose–Einstein condensation of excitons in bilayer electron systems. Nature 432, 691–694 (2004)

    2004

  5. [13]

    B., Hybertsen, M

    Zhu, X., Littlewood, P. B., Hybertsen, M. S. & Rice, T. M. Exciton Condensate in Semiconductor Quantum Well Structures. Phys. Rev. Lett. 74, 1633–1636 (1995)

    1995

  6. [14]

    & Needs, R

    Maezono, R., López Ríos, P., Ogawa, T. & Needs, R. J. Excitons and biexcitons in symmetric electron-hole bilayers. Phys. Rev. Lett. 110, 216407 (2013)

    2013

  7. [15]

    Dai, D. D. & Fu, L. Strong-Coupling Phases of Trions and Excitons in Electron-Hole Bilayers at Commensurate Densities. Phys. Rev. Lett. 132, 196202 (2024)

    2024

  8. [16]

    Qi, R. et al. Electrically controlled interlayer trion fluid in electron-hole bilayers. Preprint at https://doi.org/10.48550/arXiv.2312.03251 (2023)

    2023 doi arXiv

  9. [17]

    Nguyen, P. X. et al. A degenerate trion liquid in atomic double layers. Preprint at https://doi.org/10.48550/arXiv.2312.12571 (2023)

    2023 doi arXiv

  10. [18]

    Liu, X. et al. Crossover between strongly coupled and weakly coupled exciton superfluids. Science 375, 205–209 (2022)

    2022

  11. [19]

    Eisenstein, J. P. Exciton Condensation in Bilayer Quantum Hall Systems. Annu. Rev. Condens. Matter Phys. 5, 159–181 (2014)

    2014

  12. [20]

    Li, J. I. A., Taniguchi, T., Watanabe, K., Hone, J. & Dean, C. R. Excitonic superfluid phase in double bilayer graphene. Nat. Phys. 13, 751–755 (2017)

    2017

  13. [21]

    Croxall, A. F. et al. Anomalous Coulomb Drag in Electron-Hole Bilayers. Phys. Rev. Lett. 101, 246801 (2008)

    2008

  14. [22]

    Du, L. et al. Evidence for a topological excitonic insulator in InAs/GaSb bilayers. Nat. Commun. 8, 1971 (2017)

    2017

  15. [23]

    A., Wang, B., Du, L

    Wang, R., Sedrakyan, T. A., Wang, B., Du, L. & Du, R.-R. Excitonic topological order in imbalanced electron–hole bilayers. Nature 619, 57–62 (2023)

    2023

  16. [24]

    & Du, R.-R

    Han, Z., Li, T., Zhang, L., Sullivan, G. & Du, R.-R. Anomalous Conductance Oscillations in the Hybridization Gap of $\mathrm{InAs}/\mathrm{GaSb}$ Quantum Wells. Phys. Rev. Lett. 123, 126803 (2019)

    2019

  17. [25]

    & Hu, L.-H

    Xiao, D., Liu, C.-X., Samarth, N. & Hu, L.-H. Anomalous Quantum Oscillations of Interacting Electron-Hole Gases in Inverted Type-II $\mathrm{InAs}/\mathrm{GaSb}$ Quantum Wells. Phys. Rev. Lett. 122, 186802 (2019)

    2019

  18. [26]

    & Allen, J

    Li, L., Sun, K., Kurdak, C. & Allen, J. W. Emergent mystery in the Kondo insulator samarium hexaboride. Nat. Rev. Phys. 2, 463–479 (2020)

    2020

  19. [27]

    Pirie, H. et al. Visualizing the atomic-scale origin of metallic behavior in Kondo insulators. Science 379, 1214–1218 (2023)

    2023

  20. [28]

    Shen, H. & Fu, L. Quantum Oscillation from In-Gap States and a Non-Hermitian Landau Level Problem. Phys. Rev. Lett. 121, 026403 (2018)

    2018

  21. [29]

    & Wang, F

    Zhang, L., Song, X.-Y. & Wang, F. Quantum Oscillation in Narrow-Gap Topological Insulators. Phys. Rev. Lett. 116, 046404 (2016)

    2016

  22. [30]

    & Cooper, N

    Knolle, J. & Cooper, N. R. Quantum Oscillations without a Fermi Surface and the Anomalous de Haas-van Alphen Effect. Phys. Rev. Lett. 115, 146401 (2015)

    2015

  23. [31]

    & Cooper, N

    Knolle, J. & Cooper, N. R. Excitons in topological Kondo insulators: Theory of thermodynamic and transport anomalies in SmB6. Phys. Rev. Lett. 118, 096604 (2017)

    2017

  24. [32]

    & Tsvelik, A

    Erten, O., Chang, P.-Y., Coleman, P. & Tsvelik, A. M. Skyrme Insulators: Insulators at the Brink of Superconductivity. Phys. Rev. Lett. 119, 057603 (2017)

    2017

  25. [33]

    Lee, P. A. Quantum oscillations in the activated conductivity in excitonic insulators: Possible application to monolayer WTe2. Phys. Rev. B 103, L041101 (2021)

    2021

  26. [34]

    & Lee, P

    He, W.-Y. & Lee, P. A. Quantum oscillation of thermally activated conductivity in a monolayer WTe2-like excitonic insulator. Phys. Rev. B 104, L041110 (2021)

    2021

  27. [35]

    & Senthil, T

    Chowdhury, D., Sodemann, I. & Senthil, T. Mixed-valence insulators with neutral Fermi surfaces. Nat. Commun. 9, 1766 (2018)

    2018

  28. [36]

    & Senthil, T

    Sodemann, I., Chowdhury, D. & Senthil, T. Quantum oscillations in insulators with neutral Fermi surfaces. Phys. Rev. B 97, 045152 (2018)

    2018

  29. [37]

    Li, G. et al. Two-dimensional Fermi surfaces in Kondo insulator SmB6. Science 346, 1208– 1212 (2014)

    2014

  30. [38]

    Tan, B. S. et al. Unconventional Fermi surface in an insulating state. Science 349, 287–290 (2015)

    2015

  31. [39]

    Wang, P. et al. Landau quantization and highly mobile fermions in an insulator. Nature 589, 225–229 (2021)

    2021

  32. [40]

    Rikken, G. L. J. A. et al. Two-terminal resistance of quantum Hall devices. Phys. Rev. B 37, 6181–6186 (1988)

    1988

  33. [41]

    F., Shan, J

    Zhu, J., Li, T., Young, A. F., Shan, J. & Mak, K. F. Quantum Oscillations in Two- Dimensional Insulators Induced by Graphite Gates. Phys. Rev. Lett. 127, 247702 (2021)

    2021

  34. [42]

    Fenton, E. W. Excitonic Insulator in a Magnetic Field. Phys. Rev. 170, 816–821 (1968)

    1968

  35. [43]

    Li, H. et al. Electrode-Free Anodic Oxidation Nanolithography of Low-Dimensional Materials. Nano Lett. 18, 8011–8015 (2018)

    2018

  36. [44]

    Sung, J. et al. Observation of an electronic microemulsion phase emerging from a quantum crystal-to-liquid transition. Preprint at https://doi.org/10.48550/arXiv.2311.18069 (2023). Data availability The data that support the findings of this study are available from the corres...

    2023 doi arXiv

  37. [45]

    Nearly no 𝑉𝑉B dependence is observed, with an average value of 2.2 kΩ

    Their difference (yellow line) corresponds to the total Pt -WSe2 contact resistance on the two sides. Nearly no 𝑉𝑉B dependence is observed, with an average value of 2.2 kΩ. c, Magnetic field dependence of the Pt-WSe2 contact resistance, showing a slight increase at high fields...

Pith tools

Reviewed August 10, 2026 · model on record in the stance chip above.