Pith. sign in

REVIEW 3 major objections 7 minor 62 references

Electric field tunable bands in doubly aligned bilayer graphene hBN moire superlattice

T0 review · 3 major / 7 minor · reviewed 2026-08-09 · deepseek-v4-flash

Challenge this review Re-run · record.json Download PDF Read on arXiv ↗ Review JSON

Pith's one-line read A displacement field in an asymmetric hBN/bilayer-graphene/hBN supermoire device suppresses holes for one polarity and electrons for the other, and opens a new six-fold-degenerate Landau fan near charge neutrality.

desk verdict Main D-induced electron-hole asymmetry is well supported; the six-fold-degenerate fan and gap at n_a are interesting but rest on Rxx minima alone. read the letter →

arxiv 2502.03925 v1 pith:S6C6UG5O submitted 2025-02-06 cond-mat.mes-hall

Priya Tiwari , Kenji Watanabe , Takashi Taniguchi , Aveek Bid This is my paper · ORCID
classification cond-mat.mes-hall
keywords bilayergraphenehexagonalboronnitridesupermoirésuperlatticedisplacementfieldlayerpolarizationLandaufansix-folddegeneracyquantumHalleffect
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This paper reports transport measurements on a bilayer graphene sheet sandwiched between two hexagonal boron nitride layers whose twist angles are deliberately different, about 0.44° on top and 0.03° on bottom. The authors try to establish that a vertical displacement field acts very differently on the two carrier species: positive $D$ suppresses hole conductance by up to two orders of magnitude while leaving electron conductance nearly unchanged, and negative $D$ does the reverse. They also report a new, $D$-dependent gap near the charge neutrality point, visible as an extra Landau fan whose levels are six-fold degenerate, and they extract a gap of about 14 meV from temperature-dependent resistance. The significance is that angle asymmetry plus layer polarization turns an external field into a band-selective switch, and the new gap and fan may point to symmetry-broken states not seen in aligned systems. The authors explicitly note that they do not yet understand the origin of this gap.

What carries the argument

The mechanism invoked is the asymmetric double moire: unequal twist angles ($\theta_t \ne \theta_b$) break inversion symmetry, creating an intrinsic electric field $E_i$ and a layer-polarized ground state. The theory the paper relies on predicts that valence-band carriers localize at the interface with the larger twist angle while conduction-band carriers localize at the interface with the smaller twist angle, so an external displacement field $D = E_{\rm ext}/\epsilon$ can suppress the density of states of one band while barely changing the other. The experimental enabler is a dual-gated device that independently sets the carrier density $n$ and the displacement field $D$, allowing the $n$--$D$ plane to be mapped. The new gap at $n_a$ is inferred from a sign change in the Hall density and from an extra Landau fan, with the fan's six-fold degeneracy read from equally spaced $R_{xx}$ minima.

What would settle it

Measure the Hall resistance across the $n_a$ Landau fan: the six-fold-degenerate interpretation predicts quantized plateaus at $\sigma_{xy} = \pm 6e^2/h$, $\pm 12e^2/h$, and $\pm 18e^2/h$; absence of these plateaus, or plateaus at different integer values, would disprove the claimed gap and fan.

Watch

Extended reading notes

Core claim

The central experimental claim is that in a doubly aligned but asymmetrically twisted hBN/bilayer-graphene/hBN supermoire lattice, the external displacement field $D$ modifies the valence and conduction bands asymmetrically because the two moire potentials act on different graphene layers. With twist angles $\theta_t = 0.44^\circ$ and $\theta_b = 0.03^\circ$, the intrinsic field $E_i$ layer-polarizes the bands: hole wavefunctions sit at the top interface and electron wavefunctions at the bottom interface. Applying $D>0$ enhances that polarization, strongly suppressing the hole density of states and conductance, while $D<0$ reverses the layer polarization and suppresses electrons. The paper further claims that at finite $D$ a new gap opens at a density $n_a$ near charge neutrality, with the gap position moving with $D$ and reversing sign when $D$ reverses; in a magnetic field this gap generates a Landau fan with six-fold degenerate minima at $\nu = \pm 6, \pm 12, \pm 18$, in contrast to the usual eight-fold degeneracy of pristine bilayer graphene. From an Arrhenius analysis at $D/\epsilon_0 = 0.18$ V/nm the authors estimate a gap of about 14.4 meV, and they state that the origin of this gap is not understood.

Load-bearing premise

The claim that a new gap opens at $n_a$ depends on reading the resistance dips in the magnetic-field map as one clean Landau fan with six-fold degeneracy; if the dips belong to different fans or are shifted by a filling-factor offset, the gap interpretation would not hold.

Editorial extensions

If this is right

  • A supermoire heterostructure with unequal twist angles can act as a displacement-field-controlled valve: one carrier species can be suppressed by two orders of magnitude while the other passes almost unaffected.
  • The $D$-dependent gap at $n_a$ provides a new density- and field-tunable gap near charge neutrality in bilayer graphene/hBN, with an energy scale of about 14 meV at moderate $D$.
  • The six-fold Landau fan implies that the gap region has reduced degeneracy compared with pristine bilayer graphene, indicating that either spin or valley degeneracy is lifted at $n_a$.
  • Reduced visibility of Landau oscillations at high negative $D$ is consistent with the emergence of a quasicrystalline phase in the double-moire system, as proposed in twisted trilayer graphene.
  • The observed asymmetry accounts for the electron-hole asymmetric conductance maps seen in earlier supermoire studies.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • If the $n_a$ fan is a true gap, the six-fold degeneracy predicts quantized Hall plateaus at $\sigma_{xy} = \pm 6e^2/h$, $\pm 12e^2/h$, and $\pm 18e^2/h$; the paper shows only $R_{xx}$ minima, so this is a direct experimental check.
  • The near-linear growth of $n_a$ with $D$ suggests a simple polarization model in which $n_a$ tracks the displacement-induced charge transfer; fitting that slope would give the effective polarizability of the supermoire.
  • The same asymmetry mechanism should appear in any double-moire stack with unequal twist angles, making the effect a general design principle rather than a single-device peculiarity.
  • The quasicrystal interpretation could be sharpened by searching for a second set of Bragg features in the $dG/dn$ map; transport alone cannot distinguish quasicrystal formation from disorder-broadened Landau levels.
Share X Bluesky LinkedIn Reddit HN

Signed reviews

No signed human review yet.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

3 major / 7 minor

Summary. The paper reports transport measurements on a single doubly aligned hBN/BLG/hBN device with asymmetric twist angles (θ_t = 0.44°, θ_b = 0.03°). It claims that a perpendicular displacement field D suppresses the conductance of one carrier sign while leaving the other almost unchanged, in a manner that depends on the sign of D; that additional D-dependent gap features appear near the charge neutrality point; and that in the quantum Hall regime a new Landau fan with six-fold degenerate levels emerges at density n_a. The authors attribute the electron-hole asymmetry to layer polarization in the asymmetric supermoiré potential and cite qualitative agreement with the theory of Ref. [42].

Significance. The qualitative observation of D-induced electron-hole asymmetry is credible and, if it holds up, provides a useful experimental confirmation of the layer-polarization picture for asymmetric supermoiré systems, extending prior work on the same device (Ref. [17]). The paper has real strengths: it compares against an external theoretical prediction rather than fitting a model to the data; it shows consistent behavior in four-probe and two-probe measurements; and it includes temperature-dependent data used to estimate gap scales. However, the two most striking quantitative claims—the 14.4 meV gap at n_a and the six-fold Landau level degeneracy—rest on longitudinal-resistance features in a single Landau fan from one device, without quantized Hall plateaus or an independent gap probe. The authors are explicit that the origin of the D-dependent gap is unknown, which is honest but also indicates that the interpretation is not yet secure.

major comments (3)
  1. [D-field induced modification of gaps; Fig. 4 and SI S2] The central quantitative claim—a new six-fold-degenerate Landau fan emerging from n_a—is inferred entirely from minima in Rxx at ν = ±6, ±12, ±18 in one Landau fan (Fig. 4a; Fig. S3a). No quantized Hall conductance plateaus are shown for this fan, and the filling-factor assignment has not been independently calibrated. If the minima belong to more than one fan, arise from avoided crossings, or if the fan vertex is offset from n_a, the inferred degeneracy and the 'gap opens at n_a' conclusion would not follow. Because this is the paper's main novelty, the identification needs at least one independent probe (Rxy quantization, compressibility, or activated transport over a range of densities) before it can be taken as established.
  2. [SI S3, Table I] The 14.4 meV gap at n_a is obtained from an Arrhenius fit to a resistance hump at one density and one D value in a single device (Fig. S6, Table I). A resistance hump can reflect a mobility minimum or interaction-enhanced scattering rather than a spectral gap; the Hall-density sign change at B = 0.5 T (Fig. 3b) is not by itself a gap probe. The main-text statement that quantum Hall measurements 'establish' a gap at n_a is therefore stronger than the evidence presented. The authors' own caveat that the origin of the gap is unknown underscores the need for a direct measurement.
  3. [Introduction and D-field induced electron-hole asymmetry] The attribution of the observed electron-hole asymmetry to layer polarization and the claimed agreement with Ref. [42] remain qualitative. The experimental n-D maps contain adjustable parameters n0, D0, Ctg, and Cbg, but no quantitative comparison is made between the measured conductance suppression and the calculated density of states, nor between the measured n_a(D) trend and any theoretical prediction. A quantitative test would materially strengthen the central physical picture and is within reach of the existing data.
minor comments (7)
  1. [Abstract] The abstract states that 'new 6-fold degenerate Landau levels are observed' without qualification; given the evidence described above, 'consistent with six-fold degeneracy' would be more accurate.
  2. [PACS numbers] The line 'PACS numbers: 1' appears incomplete; either provide valid PACS codes or remove the line.
  3. [Fig. 4] The color scale for Gxx in Fig. 4 is not defined, so the reader cannot determine the absolute conductance values represented by the fan diagram.
  4. [Conclusions] In the Conclusions, 'contrasting with the expected4 in graphene' should be 'contrasting with the expected four-fold degeneracy in monolayer graphene'; the passage should also be checked for grammar.
  5. [References] Reference [49], the pointer to the Supplemental Material, uses a placeholder URL and should be finalized and cross-referenced consistently in the text.
  6. [Fig. S2 caption] The Fig. S2 caption contains an incomplete sentence ('The Rxx peak at nb and nt are showing completely behaviour.') that should be rewritten.
  7. [Device parameters] The text defines D = E_ext/ε while the figures use D/ε0 in V/nm; the relationship between these quantities and the sign convention for D should be stated explicitly.

Circularity Check

0 steps flagged · score 0.0 of 10

No significant circularity: the D-field asymmetry, the na gap, and the Landau-fan claims rest on new transport data compared with an external theory, not on fitted inputs or self-citations.

full rationale

The paper's central claims are experimental observations: conductance asymmetry under positive and negative displacement field, the sign change in Hall density at na, the additional Landau fan emerging from na with six-fold degeneracy, and the 14.4 meV Arrhenius gap. These are new data presented in this work, not quantities derived from the model being tested. The comparison to theory is qualitative and uses an external calculation (Ref. [42], Zhu et al., Phys. Rev. B 106, 205134), with no fitting parameters adjusted to force agreement; the authors explicitly disavow a derivation of the gap: 'We do not have an understanding of the origin of this D-dependent gap.' The self-citation [17] supplies prior device characterization (twist angles, secondary Dirac points) from Brown-Zak and magnetotransport measurements of the same device; this is a reproducible external measurement set, not the target claim. The calibration constants n0 and D0 are standard gate-capacitance offsets and do not encode the D-asymmetry or the na-gap. The six-fold degeneracy argument is an interpretation of Rxx minima based on external degeneracy counting (Ref. [50]) and is flagged by the authors as needing further study; any overinterpretation risk is a correctness concern, not a circularity of derivation. No equation in the paper reduces a predicted quantity to its own input, so the circularity score is 0.

Assumptions & free parameters 3 free parameters · 4 assumptions · 0 invented entities

The experimental core is self-contained transport data, but the interpretation imports the layer-polarization picture from Ref. [42] and imports the quasicrystal explanation from Refs. [45,46]. The main free parameters are standard device calibrations. No new physical entity is introduced.

free parameters (3)
  • n0 = not stated
    Residual doping offset in the density formula; affects the absolute density axis but not the main asymmetry.
  • D0 = not stated
    Internal displacement field offset; the sign convention for positive/negative D (and thus which band is suppressed) depends on it.
  • Ctg, Cbg = extracted from quantum Hall measurements
    Gate capacitances used to convert voltages to n and D; calibration assumes uniformity and stability.
assumptions (4)
  • domain assumption Asymmetric twist angles (theta_t=0.44 deg, theta_b=0.03 deg) create a built-in electric field and layer-polarized bands as predicted by Zhu et al. (Ref. 42).
    Used throughout to interpret the conductance asymmetry as intrinsic band modification rather than another mechanism. Not independently verified in this paper.
  • domain assumption The dual-gate relations n=(CbgVbg+CtgVtg)/e+n0 and D=(CbgVbg-CtgVtg)/2+D0 cleanly separate density and displacement field.
    Assumes constant capacitances and stable offsets; errors here would shift the n-D map and could mimic or mask field-dependent gaps.
  • domain assumption The Rxx minima in the Landau fan at n_a correspond to integer filling factors of a single fan with no offset.
    Necessary for the six-fold degeneracy claim; no quantized Hall plateaus are shown to confirm this assignment.
  • ad hoc to paper The loss of Landau-level visibility at high negative D and small n is attributed to quasicrystal formation, following Refs. [45,46].
    Authors label this provisional ('provisionally attribute'), with no structural probe of quasicrystalline order.

how reviews work

0 comments
Cite this review

Pith. "Pith review of Electric field tunable bands in doubly aligned bilayer graphene hBN moire superlattice." pith.science (2026). https://pith.science/paper/S6C6UG5O

@misc{pith2026250203925,
  author       = {Pith},
  title        = {Pith review of: Electric field tunable bands in doubly aligned bilayer graphene hBN moire superlattice},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/S6C6UG5O}},
  note         = {Machine review of arXiv:2502.03925}
}
read the original abstract

In this letter, we demonstrate electric field-induced band modification of an asymmetrically twisted hBN/BLG/hBN supermoire lattice. Distinct from unaligned BLG/hBN systems, we observe regions in the density-displacement field (n-D) plane where the device conductance is independent of n and decreases as |D| increases. This distinction arises due to the angle asymmetry between the layers, which induces field-controlled layer polarization. We identify D-dependent additional band gaps near the charge neutrality point that appear in the conduction (valence) band for negative (positive) D values. In the quantum Hall regime, new 6-fold degenerate Landau levels are observed. Our findings establish that in an asymmetric supermoire heterostructure, an external vertical displacement field affects the valence and conduction bands very differently and sheds light on the asymmetric conductance patterns noted in previous studies.

Figures

Figures reproduced from arXiv: 2502.03925 by the authors.

Figure 1
Figure 1. (a) A Schematic of the BLG layer sandwiched between two hBN layers. L1, L2, L3, and L4 [PITH_FULL_IMAGE:figures/full_fig_p003_1.png] view at source ↗
Figure 2
Figure 2. Plot of Gxx as a function of n for different values of D/ϵ0 at B = 0.7 T. Each curve is vertically shifted by 0.6 mS for better clarity. The dotted lines mark the evolution of the additional peaks observed at a finite-D. in the valence band are predicted to be localized on the interface between the top hBN and BLG (interface of L3/L4 of [PITH_FULL_IMAGE:figures/full_fig_p005_2.png] view at source ↗
Figure 3
Figure 3. Hall carrier density nH measured at B = 0.5 T as a function of number density n for (a) D/ϵ0 = 0.0 V/nm, and (b) D/ϵ0 = 0.18 V/nm. In the presence of an externally applied displacement field D, this spatial separation of the carriers in the conduction and the valence bands gets enhanced. Band structure calculations indicate that for increasing positive D, the DOS of the conduction band remains largely unaffected, wh… view at source ↗
Figures from the paper (1 more)
Figure 4
Figure 4. Figure 4: (a) Gxx as a function of B and n at D/ϵ0 = 0.18 V/nm; the solid white lines indicate the conductance minima at ν = ±4, ±8, ±12, ...... An additional landau fan emerges from n = −0.6 × 1016 m−2 with a six-fold degeneracy (indicated by thick white dotted lines). (b) Gxx …

Discussion (0). Continue with ORCID to comment.

Reference graph

Works this paper leans on

62 extracted references · 58 canonical work pages

  1. [42]

    Z. Zhu, S. Carr, Q. Ma, and E. Kaxiras, Electric field tunable layer polarization in graphene/boron- nitride twisted quadrilayer superlattices, Phys. Rev. B 106, 205134 (2022)

    work page 2022

  2. [17]

    M. K. Jat, P. Tiwari, R. Bajaj, I. Shitut, S. Mandal, K. Watanabe, T. Taniguchi, H. R. Krishna- murthy, M. Jain, and A. Bid, Higher order gaps in the renormalized band structure of doubly aligned hbn/bilayer graphene moire superlattice, Nature Communications 15, 2335 (2024)

    work page 2024

  3. [1]

    Y . Liu, N. O. Weiss, X. Duan, H.-C. Cheng, Y . Huang, and X. Duan, Van der waals heterostructures and devices, Nature Reviews Materials 1, 16042 (2016)

    work page 2016

  4. [2]

    A. K. Geim and I. V . Grigorieva, Van der waals heterostructures, Nature499, 419 (2013)

    2013

  5. [3]

    B. V . Lotsch, Vertical 2d heterostructures, Annual Review of Materials Research 45, 85 (2015), https://doi.org/10.1146/annurev-matsci-070214-020934

    work page doi:10.1146/annurev-matsci-070214-020934 2015

  6. [4]

    H. Wang, F. Liu, W. Fu, Z. Fang, W. Zhou, and Z. Liu, Two-dimensional heterostructures: fabrication, characterization, and application, Nanoscale 6, 12250 (2014)

    work page 2014

  7. [5]

    X. Zhou, X. Hu, J. Yu, S. Liu, Z. Shu, Q. Zhang, H. Li, Y . Ma, H. Xu, and T. Zhai, 2d layered material- based van der waals heterostructures for optoelectronics, Advanced Functional Materials28, 1706587 (2018)

    work page 2018

  8. [6]

    K. S. Novoselov, A. Mishchenko, A. Carvalho, and A. H. Castro Neto, 2d materials and van der waals heterostructures, Science 353, 10.1126/science.aac9439 (2016)

    doi:10.1126/science.aac9439 2016

Show all 62 references
  1. [7]

    Tiwari, S

    P. Tiwari, S. K. Srivastav, S. Ray, T. Das, and A. Bid, Observation of time-reversal invariant helical edge-modes in bilayer graphene/wse2 heterostructure, ACS Nano 15, 916 (2020)

    2020

  2. [8]

    Tiwari, S

    P. Tiwari, S. K. Srivastav, and A. Bid, Electric-field-tunable valley zeeman effect in bilayer graphene heterostructures: Realization of the spin-orbit valve effect, Phys. Rev. Lett. 126, 096801 (2021)

    2021

  3. [9]

    Tiwari, D

    P. Tiwari, D. Sahani, A. Chakraborty, K. Das, K. Watanabe, T. Taniguchi, A. Agarwal, and A. Bid, Observation of the time-reversal symmetric hall effect in graphene–wse2 heterostructures at room temperature, Nano Letters 23, 6792 (2023)

    2023

  4. [10]

    M. K. Jat, S. Mishra, H. K. Mann, R. Bajaj, K. Watanabe, T. Taniguchi, H. R. Krishnamurthy, M. Jain, and A. Bid, Controlling umklapp scattering in a bilayer graphene moiré superlattice, Nano Letters 24, 2203 (2024), pMID: 38345527, https://doi.org/10.1021/acs.nanolett.3c04223

    2024 doi

  5. [11]

    Y . Cao, V . Fatemi, S. Fang, K. Watanabe, T. Taniguchi, E. Kaxiras, and P. Jarillo-Herrero, Unconven- tional superconductivity in magic-angle graphene superlattices, Nature 556, 43 (2018)

    2018

  6. [12]

    Y . Cao, D. Rodan-Legrain, O. Rubies-Bigorda, J. M. Park, K. Watanabe, T. Taniguchi, and P. Jarillo- Herrero, Tunable correlated states and spin-polarized phases in twisted bilayer–bilayer graphene, Na- ture 583, 215 (2020)

    2020

  7. [13]

    N. P. Kazmierczak, M. Van Winkle, C. Ophus, K. C. Bustillo, S. Carr, H. G. Brown, J. Ciston, 11 T. Taniguchi, K. Watanabe, and D. K. Bediako, Strain fields in twisted bilayer graphene, Nature ma- terials 20, 956 (2021)

    2021

  8. [14]

    Y . Li, F. Zhang, V .-A. Ha, Y .-C. Lin, C. Dong, Q. Gao, Z. Liu, X. Liu, S. H. Ryu, H. Kim, et al., Tuning commensurability in twisted van der waals bilayers, Nature 625, 494 (2024)

    2024

  9. [15]

    J. Cai, E. Anderson, C. Wang, X. Zhang, X. Liu, W. Holtzmann, Y . Zhang, F. Fan, T. Taniguchi, K. Watanabe, et al., Signatures of fractional quantum anomalous hall states in twisted mote2, Nature 622, 63 (2023)

    2023

  10. [16]

    F. Xu, Z. Sun, T. Jia, C. Liu, C. Xu, C. Li, Y . Gu, K. Watanabe, T. Taniguchi, B. Tong, et al., Ob- servation of integer and fractional quantum anomalous hall effects in twisted bilayer mote 2, Physical Review X 13, 031037 (2023)

    2023

  11. [18]

    Scuri, T

    G. Scuri, T. I. Andersen, Y . Zhou, D. S. Wild, J. Sung, R. J. Gelly, D. Bérubé, H. Heo, L. Shao, A. Y . Joe,et al., Electrically tunable valley dynamics in twisted wse 2/wse 2 bilayers, Physical Review Letters 124, 217403 (2020)

    2020

  12. [19]

    Vitale, K

    V . Vitale, K. Atalar, A. A. Mostofi, and J. Lischner, Flat band properties of twisted transition metal dichalcogenide homo-and heterobilayers of mos2, mose2, ws2 and wse2, 2D Materials 8, 045010 (2021)

    2021

  13. [20]

    D. A. G. González, B. L. Chittari, Y . Park, J.-H. Sun, and J. Jung, Topological phases in n-layer abc graphene/boron nitride moiré superlattices, Phys. Rev. B 103, 165112 (2021)

    2021

  14. [21]

    J. C. W. Song, P. Samutpraphoot, and L. S. Levitov, Topological bloch bands in graphene superlattices, Proceedings of the National Academy of Sciences 112, 10879 (2015), https://www.pnas.org/doi/pdf/10.1073/pnas.1424760112

    2015 doi

  15. [22]

    L. A. Ponomarenko, R. V . Gorbachev, G. L. Yu, D. C. Elias, R. Jalil, A. A. Patel, A. Mishchenko, A. S. Mayorov, C. R. Woods, J. R. Wallbank, M. Mucha-Kruczynski, B. A. Piot, M. Potemski, I. V . Grigorieva, K. S. Novoselov, F. Guinea, V . I. Fal’ko, and A. K. Geim, Cloning of ...

    2013

  16. [23]

    Wang, D.-K

    Z. Wang, D.-K. Ki, H. Chen, H. Berger, A. H. MacDonald, and A. F. Morpurgo, Strong interface- induced spin–orbit interaction in graphene on ws2, Nature Communications 6, 8339 (2015)

    2015

  17. [24]

    K. Endo, K. Komatsu, T. Iwasaki, E. Watanabe, D. Tsuya, K. Watanabe, T. Taniguchi, 12 Y . Noguchi, Y . Wakayama, Y . Morita, and S. Moriyama, Topological valley currents in bi- layer graphene/hexagonal boron nitride superlattices, Applied Physics Letters 114, 243105 (2019), ht...

    2019 doi

  18. [25]

    G. Chen, A. L. Sharpe, E. J. Fox, Y .-H. Zhang, S. Wang, L. Jiang, B. Lyu, H. Li, K. Watanabe, T. Taniguchi, Z. Shi, T. Senthil, D. Goldhaber-Gordon, Y . Zhang, and F. Wang, Tunable correlated chern insulator and ferromagnetism in a moiré superlattice, Nature 579, 56 (2020)

    2020

  19. [26]

    Yankowitz, J

    M. Yankowitz, J. Xue, D. Cormode, J. D. Sanchez-Yamagishi, K. Watanabe, T. Taniguchi, P. Jarillo- Herrero, P. Jacquod, and B. J. LeRoy, Emergence of superlattice dirac points in graphene on hexagonal boron nitride, Nature Physics 8, 382 (2012)

    2012

  20. [27]

    Yankowitz, K

    M. Yankowitz, K. Watanabe, T. Taniguchi, P. San-Jose, and B. J. LeRoy, Pressure-induced commen- surate stacking of graphene on boron nitride, Nature Communications 7, 13168 (2016)

    2016

  21. [28]

    Y . Yang, J. Li, J. Yin, S. Xu, C. Mullan, T. Taniguchi, K. Watanabe, A. K. Geim, K. S. Novoselov, and A. Mishchenko, In situ manipulation of van der waals heterostructures for twistronics, Science Advances 6, eabd3655 (2020), https://www.science.org/doi/pdf/10.1126/sciadv.abd3655

    2020 doi

  22. [29]

    N. R. Finney, M. Yankowitz, L. Muraleetharan, K. Watanabe, T. Taniguchi, C. R. Dean, and J. Hone, Tunable crystal symmetry in grapheneâC“boron nitride heterostructures with coexisting moiré super- lattices, Nature Nanotechnology 14, 1029 (2019)

    2019

  23. [30]

    H. Kim, N. Leconte, B. L. Chittari, K. Watanabe, T. Taniguchi, A. H. MacDonald, J. Jung, and S. Jung, Accurate gap determination in monolayer and bilayer graphene/h-bn moiré superlattices, Nano Letters 18, 7732 (2018), pMID: 30457338, https://doi.org/10.1021/acs.nanolett.8b03423

    2018 doi

  24. [31]

    J. Shi, J. Zhu, and A. H. MacDonald, Moiré commensurability and the quantum anomalous hall effect in twisted bilayer graphene on hexagonal boron nitride, Phys. Rev. B 103, 075122 (2021)

    2021

  25. [32]

    Anđelković, S

    M. AnÄ‘elković, S. P. Milovanović, L. Covaci, and F. M. Peeters, Double moiré with a twist: Supermoiré in encapsulated graphene, Nano Letters 20, 979 (2020), pMID: 31961161

    2020

  26. [33]

    Oka and M

    H. Oka and M. Koshino, Fractal energy gaps and topological invariants in hbn/graphene/hbn double moiré systems, Phys. Rev. B 104, 035306 (2021)

    2021

  27. [34]

    Leconte and J

    N. Leconte and J. Jung, Commensurate and incommensurate double moire interference in graphene encapsulated by hexagonal boron nitride, 2D Materials 7, 031005 (2020)

    2020

  28. [35]

    X. Lu, J. Tang, J. R. Wallbank, S. Wang, C. Shen, S. Wu, P. Chen, W. Yang, J. Zhang, K. Watan- abe, T. Taniguchi, R. Yang, D. Shi, D. K. Efetov, V . I. Fal’ko, and G. Zhang, High-order minibands and interband landau level reconstruction in graphene moiré superlattices, Phys. R...

    2020

  29. [36]

    Z. Wang, Y . B. Wang, J. Yin, E. Tóvári, Y . Yang, L. Lin, M. Holwill, J. Birkbeck, D. J. Perello, S. Xu, J. Zultak, R. V . Gorbachev, A. V . Kretinin, T. Taniguchi, K. Watanabe, S. V . Morozov, M. Anđelković, S. P. Milovanović, L. Covaci, F. M. Peeters, A. Mishchenko, A....

    2019

  30. [37]

    X. Sun, S. Zhang, Z. Liu, H. Zhu, J. Huang, K. Yuan, Z. Wang, K. Watanabe, T. Taniguchi, X. Li, M. Zhu, J. Mao, T. Yang, J. Kang, J. Liu, Y . Ye, Z. V . Han, and Z. Zhang, Correlated states in doubly- aligned hbn/graphene/hbn heterostructures, Nature Communications 12, 7196 (2021)

    2021

  31. [38]

    Kuiri, S

    M. Kuiri, S. K. Srivastav, S. Ray, K. Watanabe, T. Taniguchi, T. Das, and A. Das, Enhanced electron- phonon coupling in doubly aligned hexagonal boron nitride bilayer graphene heterostructure, Phys. Rev. B 103, 115419 (2021)

    2021

  32. [39]

    Yankowitz, Q

    M. Yankowitz, Q. Ma, P. Jarillo-Herrero, and B. J. LeRoy, van der waals heterostructures combining graphene and hexagonal boron nitride, Nature Reviews Physics 1, 112 (2019)

    2019

  33. [40]

    Moriya, K

    R. Moriya, K. Kinoshita, J. A. Crosse, K. Watanabe, T. Taniguchi, S. Masubuchi, P. Moon, M. Koshino, and T. Machida, Emergence of orbital angular moment at van hove singularity in graphene/h-bnmoiré superlattice, Nature Communications 11, 5380 (2020)

    2020

  34. [41]

    S. G. Mayo, F. Yndurain, and J. M. Soler, Band unfolding made simple, Journal of Physics: Condensed Matter 32, 205902 (2020)

    2020

  35. [43]

    Gmitra and J

    M. Gmitra and J. Fabian, Proximity effects in bilayer graphene on monolayer wse2: Field-effect spin valley locking, spin-orbit valve, and spin transistor, Phys. Rev. Lett.119, 146401 (2017)

    2017

  36. [44]

    Island, X

    J. Island, X. Cui, C. Lewandowski, J. Khoo, E. Spanton, H. Zhou, D. Rhodes, J. Hone, T. Taniguchi, K. Watanabe, L. S. Levitov, M. P. Zaletel, and A. F. Young, Spin–orbit-driven band inversion in bilayer graphene by the van der waals proximity effect, Nature 571, 85 (2019)

    2019

  37. [45]

    A. Uri, S. C. de la Barrera, M. T. Randeria, D. Rodan-Legrain, T. Devakul, P. J. D. Crowley, N. Paul, K. Watanabe, T. Taniguchi, R. Lifshitz, L. Fu, R. C. Ashoori, and P. Jarillo-Herrero, Superconductivity and strong interactions in a tunable moiré quasicrystal, Nature 620, 762 (2023)

    2023

  38. [46]

    C.-Y . Hao, Z. Zhan, P. A. Pantaleón, J.-Q. He, Y .-X. Zhao, K. Watanabe, T. Taniguchi, F. Guinea, and 14 L. He, Robust flat bands in twisted trilayer graphene quasicrystals, arXiv preprint arXiv:2401.09010 (2024)

    2024 arXiv

  39. [47]

    Pizzocchero, L

    F. Pizzocchero, L. Gammelgaard, B. S. Jessen, J. M. Caridad, L. Wang, J. Hone, P. Bøggild, and T. J. Booth, The hot pick-up technique for batch assembly of van der waals heterostructures, Nature Communications 7, 1 (2016)

    2016

  40. [48]

    L. Wang, I. Meric, P. Huang, Q. Gao, Y . Gao, H. Tran, T. Taniguchi, K. Watanabe, L. Campos, D. Muller, et al., One-dimensional electrical contact to a two-dimensional material, Science 342, 614 (2013)

    2013

  41. [49]

    See Supplemental Material at [URL will be inserted by APS] for details of sample characterization, measurements, additional data, and theoretical analysis, which includes Ref. [52–55]

  42. [50]

    S.-C. Chen, R. Kraft, R. Danneau, K. Richter, and M.-H. Liu, Electrostatic superlattices on scaled graphene lattices, Communications Physics 3, 71 (2020)

    2020

  43. [51]

    Zheng, Q

    Z. Zheng, Q. Ma, Z. Bi, S. de la Barrera, M.-H. Liu, N. Mao, Y . Zhang, N. Kiper, K. Watanabe, T. Taniguchi, J. Kong, W. A. Tisdale, R. Ashoori, N. Gedik, L. Fu, S.-Y . Xu, and P. Jarillo-Herrero, Unconventional ferroelectricity in moiré heterostructures, Nature 588, 71 (2020)

    2020

  44. [52]

    J.-H. Chen, C. Jang, S. Xiao, M. Ishigami, and M. S. Fuhrer, Intrinsic and extrinsic performance limits of graphene devices on sio2, Nature nanotechnology 3, 206 (2008)

    2008

  45. [53]

    D. K. Efetov and P. Kim, Controlling electron-phonon interactions in graphene at ultrahigh carrier densities, Physical review letters 105, 256805 (2010)

    2010

  46. [54]

    Hwang and S

    E. Hwang and S. D. Sarma, Acoustic phonon scattering limited carrier mobility in two-dimensional extrinsic graphene, Physical Review B 77, 115449 (2008)

    2008

  47. [55]

    F. Wu, E. Hwang, and S. D. Sarma, Phonon-induced giant linear-in-t resistivity in magic angle twisted bilayer graphene: Ordinary strangeness and exotic superconductivity, Physical Review B 99, 165112 (2019). Supplementary Information Electric field tunable bands in doubly alig...

    2019

  48. [56]

    Hwang and S

    E. Hwang and S. D. Sarma, Acoustic phonon scattering limited carrier mobility in two- dimensional extrinsic graphene, Physical Review B77, 115449 (2008)

    2008

  49. [57]

    D. K. Efetov and P. Kim, Controlling electron-phonon interactions in graphene at ultrahigh carrier densities, Physical review letters105, 256805 (2010)

    2010

  50. [58]

    J.-H. Chen, C. Jang, S. Xiao, M. Ishigami, and M. S. Fuhrer, Intrinsic and extrinsic performance limits of graphene devices on sio2, Nature nanotechnology3, 206 (2008)

    2008

  51. [59]

    AnÄelkoviÄ, S

    M. AnÄelkoviÄ, S. P. MilovanoviÄ, L. Covaci, and F. M. Peeters, Double moiré with a twist: Supermoiré in encapsulated graphene, Nano Letters20, 979 (2020), pMID: 31961161

    2020

  52. [60]

    Kuiri, S

    M. Kuiri, S. K. Srivastav, S. Ray, K. Watanabe, T. Taniguchi, T. Das, and A. Das, En- hanced electron-phonon coupling in doubly aligned hexagonal boron nitride bilayer graphene heterostructure, Phys. Rev. B103, 115419 (2021)

    2021

  53. [61]

    F. Wu, E. Hwang, and S. D. Sarma, Phonon-induced giant linear-in-t resistivity in magic angle twisted bilayer graphene: Ordinary strangeness and exotic superconductivity, Physical Review B 99, 165112 (2019)

    2019

  54. [62]

    Z. Zhu, S. Carr, Q. Ma, and E. Kaxiras, Electric field tunable layer polarization in graphene/boron-nitride twisted quadrilayer superlattices, Phys. Rev. B106, 205134 (2022). 10 26

    2022

Pith tools

Reviewed August 9, 2026 · model on record in the stance chip above.