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Tunable Absorption in Near Infrared Based on Indium Tin Oxide

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Shuaishuai Hou, Lin Cheng, Nan Meng, Naixin Liu, JianChang Yan, JinMin Li, Kun Huang

Optics · Submitted 5 Mar 2025

abstract compiled · 2026-09-23 · no language-model review

The authors' main claim This absorber achieves continuously tunable absorption within a wide infrared light range.

how it is stated · asserted 1.00 read the record →

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arXiv ID2503.03130 (version 1)
Pith IDIONRZIOG, Pith's permanent record of this paper and its review
CitationJianchang Yan, Jinmin Li, Kun Huang, Lin Cheng, Naixin Liu, Nan Meng, Shuaishuai Hou. "Tunable Absorption in Near Infrared Based on Indium Tin Oxide." arXiv:2503.03130 (2025). https://pith.science/paper/IONRZIOG
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The compiled record

The paper's own sentences, arranged. Each label is drawn from a closed vocabulary; the number beside it is the probability the classifier gave that label. Numbers in the tables are the authors', checked by code. No sentence in this record was written by a model.

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Compiled by classifier-1.13.0 via TypeSafe API, question bank abstract-p1-20260923, 2026-09-23: 1 request, 4,164 input tokens.

What the abstract itself states, as probabilities: claims first 0.03 · states limitation 0.08 · human participants 0.01 · controlled comparison 0.02 · randomized assignment 0.01 · states quantitative result 0.08 · compares with prior results 0.05 · mentions code or data availability 0.02.

The abstract, sentence by sentence

arXiv listing abstract v1. Results and the main claim are underlined; .

We propose a serrated ultra-broadband infrared absorber based on the multi-layer repetitive stacking of indium tin oxide (ITO) and silicon materials. This absorber achieves continuously tunable absorption within a wide infrared light range. By changing the size and materials of the absorber, its average absorption rate can reach a relatively high level. Simulation results reveal wavelength-dependent electric field localization: shorter wavelengths concentrate in narrower upper regions, while longer wavelengths localize in wider lower areas. This design offers potential applications in near-infrared detectors, optical communication, and smart windows.

background contribution method result interpretation main claim

What the classifier reports for each sentence. The number is the probability it gave the label.
#sentencerolethe authors' own workstates the main conclusionstrength
s0 We propose a serrated ultra-broadband infrared absorber based on the multi-layer repetitive stacking of indium tin oxide (ITO) and silicon materials. contribution 0.99 0.73 0.17 asserted 0.82
s1 This absorber achieves continuously tunable absorption within a wide infrared light range. result 0.88 0.76 0.51 asserted 1.00
s2 By changing the size and materials of the absorber, its average absorption rate can reach a relatively high level. result 0.91 0.65 0.19 asserted 0.60
s3 Simulation results reveal wavelength-dependent electric field localization: shorter wavelengths concentrate in narrower upper regions, while longer wavelengths localize in wider lower areas. result 0.98 0.91 0.12 asserted 1.00
s4 This design offers potential applications in near-infrared detectors, optical communication, and smart windows. interpretation 0.64 0.19 0.12 hedged possibility 0.97

What kind of paper the classifier reports this is: simulation study 0.67 · evidence from simulation or computation 1.00.

What was examined, and what was not

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  • figures and tables
  • references and citing sentences
  • relations to other papers
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  • P abstract
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  • S sections
  • T body sentences
  • C citations
  • R cross-paper relations

Every quoted sentence on this record is the authors'. Every label is from Pith's closed vocabulary, with the probability shown beside it. Every number in the measurements table is the authors', checked by code. Record as JSON

The paper
Original abstract

We propose a serrated ultra-broadband infrared absorber based on the multi-layer repetitive stacking of indium tin oxide (ITO) and silicon materials. This absorber achieves continuously tunable absorption within a wide infrared light range. By changing the size and materials of the absorber, its average absorption rate can reach a relatively high level. Simulation results reveal wavelength-dependent electric field localization: shorter wavelengths concentrate in narrower upper regions, while longer wavelengths localize in wider lower areas. This design offers potential applications in near-infrared detectors, optical communication, and smart windows.

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