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Topological surface states induced by the magnetic proximity effect

T0 review · 3 major / 5 minor · reviewed 2026-08-15 · deepseek-v4-flash

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Pith's one-line read Magnetic proximity from FeAs/FeOx turns a trivial 3-nm α-Sn film into a topological material with a high-mobility surface state.

desk verdict A careful transport study of a plausible MPE-induced topological phase in α-Sn, but the causal role of magnetism needs a control calculation and the EF comparison is partly circular. read the letter →

arxiv 2505.07250 v2 pith:SHZYIPMH submitted 2025-05-12 cond-mat.mtrl-sci

Soichiro Fukuoka , Le Duc Anh , Masayuki Ishida , Tomoki Hotta , Takahiro Chiba , Yohei Kota , Masaaki Tanaka This is my paper · ORCID
classification cond-mat.mtrl-sci
keywords magneticproximityeffecttopologicalsurfacestateα-SnbandinversionShubnikov–deHaasoscillationsnarrow-gapsemiconductorferromagneticheterostructureodd-paritymagnetoresistance
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

This paper attempts to establish that a topological material is not a necessary starting point for magnetic topological electronics. It argues that placing a ferromagnetic FeAs/FeOx stack against a 3-nm film of α-Sn, which by itself is a trivial narrow-gap semiconductor, induces band inversion and a topological surface state through the magnetic proximity effect. The experimental evidence is a high-mobility ($\mu = 28{,}900\ \mathrm{cm^2\,V^{-1}s^{-1}}$), quasi-two-dimensional, nearly linear band observed in Shubnikov–de Haas oscillations that is absent in the α-Sn reference sample, together with first-principles calculations showing band inversion at the Γ point. If correct, the result would let many ordinary narrow-gap semiconductors be converted into magnetic topological materials without magnetic doping.

What carries the argument

The load-bearing mechanism is the magnetic proximity effect: the exchange field of the adjacent ferromagnetic FeAs layer spin-splits the bands of α-Sn, and the material's strong spin-orbit coupling then inverts the s/p band order around the Γ point, creating a topological gap and a surface state. The transport analysis runs on Lifshitz–Kosevich theory, whose phase shift $\gamma$ distinguishes linear ($\gamma \approx 0$) from quadratic ($\gamma \approx 0.5$) bands and whose angular dependence $F \propto 1/\cos\theta$ establishes two-dimensionality. The DFT slab calculation with a GGA+U correction identifies which side of the slab hosts the surface state and how its Dirac cone responds to the magnetization direction.

What would settle it

Recompute the FeAs/α-Sn slab with the correlation correction set to zero and with the FeAs magnetization rotated or disordered; if the band inversion at the Γ point disappears, the claimed phase transition is an artifact of the calculation parameters. On the transport side, a gate-voltage sweep that moves the Fermi level through the inverted gap should change the $F_\mathrm{low}$ SdH component's frequency and Berry phase in a way consistent with a Dirac surface state.

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Extended reading notes

Core claim

The central claim is that exchange splitting from a neighboring ferromagnet, combined with the strong spin-orbit coupling of α-Sn, inverts the s- and p-like bands of a 3-nm α-Sn film that is topologically trivial on its own. The inverted band structure supports a topological surface state on the vacuum/InSb side of the α-Sn slab, while the FeAs/Sn interface states hybridize with Fe d orbitals and are pushed away from Γ. Transport shows two two-dimensional SdH components: $F_\mathrm{low} = 12.3\ \mathrm{T}$ with $\mu = 28{,}900\ \mathrm{cm^2\,V^{-1}s^{-1}}$ and $\gamma = 0.28$, assigned to the surface state, and $F_\mathrm{high} = 33.4\ \mathrm{T}$ with lower mobility and $\gamma = 0.42$, assigned to the heavy-hole band. DFT further shows that the surface state's Dirac point opens a small exchange gap when the FeAs magnetization points along [001] and shifts in $k_x$ when the magnetization lies in-plane, consistent with a massive Dirac surface state under broken time-reversal symmetry. The paper concludes that the transition from a trivial to a nontrivial phase in α-Sn is driven by magnetic proximity rather than by film thickness or doping.

Load-bearing premise

The band inversion and surface state predicted by the calculation depend on a specific electronic-correlation correction and on the assumption that the FeAs layer is ferromagnetic with a fixed magnetization direction; if either is wrong, the predicted topological phase may not exist in the real sample.

Editorial extensions

If this is right

  • A 3-nm α-Sn film, which is topologically trivial on its own, becomes a host of a topological surface state when interfaced with ferromagnetic FeAs/FeOx, so a thick topological host is not required.
  • Magnetic proximity preserves the high carrier mobility of the surface band ($28{,}900\ \mathrm{cm^2\,V^{-1}s^{-1}}$), avoiding the disorder that magnetic doping typically introduces.
  • Rotating the FeAs magnetization should controllably open or shift the surface-state Dirac cone, giving a handle for switching topological transport properties.
  • The same recipe — exchange field plus strong spin-orbit coupling in a narrow-gap semiconductor — should generalize to other trivial narrow-gap semiconductors, expanding the pool of candidate magnetic topological materials.
  • The observed ~100% odd-parity magnetoresistance under in-plane field is presented as independent evidence of time-reversal breaking by the magnetic proximity effect in this heterostructure.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • A systematic thickness study of α-Sn under the same FeAs/FeOx cap should map where the proximity-induced band inversion turns on and off, sharpening the predicted phase boundary beyond the single 3-nm point.
  • Electrostatic gating of the heterostructure is a test the paper does not report: sweeping the Fermi level through the inverted gap should change the $F_\mathrm{low}$ SdH frequency and Berry phase in a way unique to a Dirac surface state.
  • The paper leaves the origin of the complex angular dependence of the odd-parity magnetoresistance explicitly unexplained; if that signal is intrinsic to the α-Sn surface, it could become a complementary probe of the same proximity-induced gap, but that link is not established.
  • The predicted sensitivity of the surface state to the FeAs magnetization direction implies that samples with multidomain FeAs should show broadened or absent $F_\mathrm{low}$ oscillations; single-domain samples would be required for the cleanest test.
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Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

3 major / 5 minor

Summary. The manuscript reports a FeOx/FeAs/α-Sn(3 nm)/InSb heterostructure in which the α-Sn layer alone is a trivial narrow-gap semiconductor, and it claims that magnetic proximity from the FeAs/FeOx layers induces band inversion and a topological surface state (TSS). Shubnikov–de Haas measurements on the heterostructure reveal two two-dimensional bands: a low-frequency band (FLow = 12.3 T) with high mobility (28,900 cm²/Vs) and a nearly linear phase shift (γ = 0.28), assigned to a TSS, and a high-frequency band (FHigh = 33.4 T) with lower mobility and quadratic dispersion, assigned to a heavy-hole band. DFT calculations with GGA+U and ferromagnetic 1-ML FeAs show band inversion at Γ and a surface state localized on the vacuum side of the slab, which the authors equate with the α-Sn/InSb interface. The paper concludes that this is a demonstration of a trivial-to-topological transition driven by the magnetic proximity effect.

Significance. If the central claim holds, the work would be significant: it would show that a magnetic topological material can be obtained from a trivial narrow-gap semiconductor by proximity exchange, avoiding the disorder introduced by magnetic doping. The transport analysis is careful, with internal cross-checks via Dingle and fan diagrams (Supplementary Notes 1 and 3), angle-dependent SdH measurements, and a plausible assignment of the two observed frequencies. The DFT calculations include explicit orbital projections and magnetization-direction dependence, which give a microscopic picture. However, two load-bearing issues currently prevent the claim from being fully supported: the absence of a nonmagnetic control calculation for the heterostructure, and the circular placement of the DFT Fermi level from the same SdH frequency that is then used to claim experiment-theory agreement. These issues are fixable within the manuscript's scope, but they must be addressed before the topological conclusion can be accepted.

major comments (3)
  1. [Methods, 'First-principles calculations'; Fig. 4f-g] The central causal claim that the magnetic proximity effect (MPE) induces the band inversion is not established because no nonmagnetic control calculation is shown. The only heterostructure calculation has the FeAs monolayer in a fixed ferromagnetic state; to attribute the Γ-point band inversion to exchange splitting, the authors need to also compute the band structure with the Fe moments constrained to zero (or with the exchange splitting artificially suppressed) and show that the inversion disappears. The manuscript's own summary ('due to MPE and orbital hybridization') concedes that hybridization is also involved, so without this control the band inversion could be a nonmagnetic interface effect. The sensitivity of the result to the choice U = −2.5 eV and to the assumed FeAs magnetic order should also be reported, since the topological conclusion depends on them.
  2. [Supplementary Note 5; Fig. 4f-g] The claimed experiment-theory agreement on the distance between EF and the Dirac point is circular. The DFT Fermi level is placed at the pink dashed line using Eq. (S3) with the SdH frequency FLow; the same quantity is then quoted as agreement between experiment and theory. This cannot serve as independent validation of the FLow = TSS assignment. The assignment may still be plausible from the phase shift, mobility, and 2D character, but the 'good agreement' sentence in the main text should be removed or replaced by a genuinely independent comparison, such as a prediction of a quantity not used to set EF.
  3. [Fig. 4f-g and Methods] The DFT slab represents the α-Sn/InSb interface as a vacuum surface (right panels of Fig. 4f-g), yet the TSS is claimed to form at that interface in the experiment. InSb is a narrow-gap semiconductor with its own electronic states, not a vacuum barrier, and hybridization with the substrate could modify or destroy the surface state. The calculation therefore does not directly demonstrate that a TSS survives at the actual α-Sn/InSb interface; an explicit treatment of the InSb substrate, or at least a quantitative discussion of why the vacuum approximation is justified, is needed.
minor comments (5)
  1. [Methods, 'Analysis of SdH oscillations'] The text states that appending zeros 'increase[s] the number of data points' to 'recover the resolution'; zero padding does not increase the intrinsic frequency resolution of the FFT, it only interpolates the spectrum. Please rephrase this sentence.
  2. [Eq. (1) and surrounding text] The statement that 'γ is 0 or 1 for a linear dispersion and 0.5 for a quadratic one' could be clarified, since γ and γ+1 are equivalent modulo the cosine period; specify the convention, such as whether a Berry phase of π corresponds to γ = 0.
  3. [Fig. 4e and main text] The text states that FIn-plane is independent of the magnetic field angle, indicating 3D characteristics, but it appears only beyond 45 degrees and is attributed to the InSb layer; it would help to state explicitly in the main text that this component is from the InSb buffer and not from α-Sn.
  4. [Methods, 'First-principles calculations'] The use of 'U = −2.5 eV' as the on-site Coulomb potential is unusual; please clarify the sign convention and justify the negative value, or correct a possible typo, since this parameter directly affects the calculated band inversion.
  5. [Fig. 2c] The SQUID magnetization curve is shown without a zero-field guide or quantitative values; the coercivity and saturation magnetization should be stated in the text or caption to substantiate the claim of ferromagnetic hysteresis behavior.

Circularity Check

1 steps flagged · score 6.0 of 10

The claimed experiment–theory agreement for the distance between EF and the Dirac point is circular: the DFT Fermi level is set from the SdH frequency of FLow via Eq. S3 and then reported as agreement.

  1. fitted input called prediction [Supplementary Note 5; main-text paragraph describing Fig. 4f-g]
    "Since FLow exhibits linear dispersion, we can estimate the distance from the Dirac point to the Fermi level to be 17.2 meV, by using equation (S3). The Fermi level EF was set from this value in Figures. 4f and g."

    The DFT band plots are not used to predict the EF-to-Dirac-point distance independently. Instead, that distance is computed from the measured SdH frequency of FLow via Eq. S3, and the Fermi level is then placed in the calculated band structure at exactly that value. The main text later reports 'good agreement between the experimental and calculated values of the distance between EF and the Dirac point and the Fermi wave number of these bands,' citing Supplementary Note 5. For the energy distance, the agreement is therefore true by construction: the same transport-derived quantity is both the input that fixes the Fermi level in the DFT figure and the quantity compared with experiment.

full rationale

The clearest circular step is in Supplementary Note 5. The authors explicitly estimate the distance from the Dirac point to EF from the SdH frequency of FLow using Eq. S3, and then state that 'The Fermi level EF was set from this value in Figures. 4f and g.' The main text then uses the resulting alignment as evidence of 'good agreement between the experimental and calculated values of the distance between EF and the Dirac point and the Fermi wave number of these bands.' That energy agreement is not an independent DFT prediction; it is imposed by construction. This makes the identification of FLow as the topological surface state partly self-referential, because the same measured frequency used to place the Fermi level is presented as confirming the band assignment. However, the central DFT result that the FeAs/alpha-Sn heterostructure exhibits band inversion and in-gap surface states is computed without using the SdH data, so the core phase-transition claim retains independent theoretical content. The self-citations to prior work on ferromagnetic FeAs (ref. 25) and on the trivial 3-nm alpha-Sn phase (ref. 13) are prior, externally falsifiable results rather than circular dependencies. The absence of a nonmagnetic control calculation is a substantive scientific limitation, but it is a missing-control/robustness concern rather than a definitional reduction, so it does not by itself raise the circularity score. Overall score 6 reflects that one key 'prediction' in the evidence chain reduces to its own input, while other parts of the derivation are independent.

Assumptions & free parameters 9 free parameters · 5 assumptions · 0 invented entities

The central claim depends on the chosen GGA+U parameter, the assumed ferromagnetic order of the FeAs monolayer, the strain value from prior work, and the LK analysis assumptions. The Fermi level placement in DFT is not independent of the SdH measurement, which introduces a circular step in the comparison. No new particles or forces are postulated.

free parameters (9)
  • GGA+U on-site U for Sn = -2.5 eV
    Chosen from prior literature (refs 13, 36, 38, 39) to reproduce α-Sn band topology; directly affects whether DFT shows band inversion in the heterostructure.
  • LK phase shift γLow = 0.28
    Fitted from the SdH oscillation at 2 K; used to claim linear dispersion of the FLow band and to assign it to a topological surface state.
  • Quantum mobility μLow = 28,900 cm²/Vs
    Fitted from the LK formula; used to argue that the FLow band has the high mobility expected of a topological surface state.
  • Cyclotron mass mLow = 0.165 m0
    Fitted from temperature damping of the FFT peak; used in the assignment to the TSS and to explain the finite mass from the exchange gap.
  • Fermi level position in DFT = -0.25 eV
    Set from the SdH-derived distance to the Dirac point (17.2 meV via Eq. S3); this placement makes the DFT-experiment comparison circular for the distance to the Dirac point.
  • LK phase shift γHigh = 0.42
    Fitted from SdH; used to assign FHigh to the heavy-hole band with parabolic dispersion.
  • Quantum mobility μHigh = 1,040 cm²/Vs
    Fitted from the LK formula; used to compare with the ordinary heavy-hole band of α-Sn.
  • Reference α-Sn LK phase shift γ = 0.97
    Fitted from SdH of the 3-nm α-Sn single layer; used to claim a linear band without band inversion.
  • Reference α-Sn quantum mobility μ = 2,820 cm²/Vs
    Fitted from the LK formula; baseline mobility for the trivial film used as comparison.
assumptions (5)
  • domain assumption The 1-ML FeAs layer is ferromagnetic with a net moment that exerts an exchange field on the adjacent α-Sn (magnetic proximity effect).
    Relies on ref. 25 from the same group; the SQUID data in Fig. 2c show hysteresis of the whole stack but cannot isolate the FeAs monolayer or prove the exchange field strength.
  • domain assumption PBE-GGA+U with U=-2.5 eV for Sn gives a quantitatively correct band topology for α-Sn films.
    The U value is taken from refs 13, 36, 38, 39; the paper validates against prior calculations but not against an independent measurement in this heterostructure.
  • standard math Shubnikov-de Haas analysis with Lifshitz-Kosevich theory applies, and the phase factor δ depends only on dimensionality as stated.
    Standard Fermi-surface analysis; the formula is textbook (ref 26), but the phase extraction for γ is sensitive to background removal and polynomial fitting choices.
  • domain assumption The observed SdH oscillations originate in the α-Sn layer, not InSb or FeOx.
    Argued from 2D angular dependence and polycrystallinity of FeOx; the FIn-plane component is assigned to InSb, so parallel conduction exists and must be separated.
  • domain assumption The α-Sn slab uses the theoretical lattice constant 6.4765 Å and a biaxial strain of -0.76% from ref 13.
    The DFT results depend on the strain and lattice constant; the -0.76% value is from the same group's previous study, not measured in these exact samples.

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Pith. "Pith review of Topological surface states induced by the magnetic proximity effect." pith.science (2026). https://pith.science/paper/SHZYIPMH

@misc{pith2026250507250,
  author       = {Pith},
  title        = {Pith review of: Topological surface states induced by the magnetic proximity effect},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/SHZYIPMH}},
  note         = {Machine review of arXiv:2505.07250}
}
read the original abstract

The combination of magnetism and topological properties in one material platform is attracting significant attention due to the potential of realizing low power consumption and error-robust electronic devices. Common practice is to start from a topological material with band inversion and incorporates ferromagnetism via chemical doping or magnetic proximity effect (MPE). In this work, we show that a topological material is not necessary and that both ferromagnetism and band inversion can be established simultaneously in a trivial insulating material by MPE from a neighbouring ferromagnetic layer. This novel route is demonstrated using quantum transport measurements and first principles calculations in a heterostructure consisting of 5 nm thick FeOx/1 monolayer of FeAs/ 3 nm thick alpha Sn. The Shubnikov de Haas oscillations show that there is linear band dispersion with high mobility in the heterostructure even though a 3 nm thick alpha Sn single layer is a trivial semiconductor. Furthermore, first principles calculations reveal that band inversion indeed occurs in this heterostructure, suggesting that the observed linear band is a topological surface state within this inverted gap. This work significantly expands the foundation for realizing magnetic topological materials in a myriad of trivial narrow gap semiconductors.

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Cited by 1 Pith paper

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score. Full citation record

  1. Giant odd-parity magnetoresistance from proximity-induced topological states

    cond-mat.mtrl-sci 2025-07 reject novelty 6.0 of 10

    An alpha-tin/(In,Fe)Sb heterostructure shows an odd-parity magnetoresistance of up to 1,150% at 1 T, attributed to proximity-induced tilted topological bands.

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Works this paper leans on

40 extracted references · 39 canonical work pages · cited by 1 Pith paper

  1. [1]

    Hasan, M. Z. & Kane, C. L. Colloquium: Topological insulators. Rev. Mod. Phys. 82 , 3045– 3067 (2010)

    work page 2010

  2. [2]

    Q., Qian, T

    Lv, B. Q., Qian, T. & Ding, H. Experimental perspective on three-dimensional topological semimetals. Rev. Mod. Phys. 93 , 025002 (2021)

    work page 2021

  3. [3]

    P., Mele, E

    Armitage, N. P., Mele, E. J. & Vishwanath, A. Weyl and Dirac semimetals in three- dimensional solids. Rev. Mod. Phys. 90 , 015001 (2018)

    work page 2018

  4. [4]

    L., Hughes, T

    He, Q. L., Hughes, T. L., Armitage, N. P., Tokura, Y. & Wang, K. L. Topological spintronics and magnetoelectronics. Nat. Mater. 21 , 15–23 (2022)

    work page 2022

  5. [5]

    & Zhang, S.-C

    Qi, X.-L. & Zhang, S.-C. Topological insulators and superconductors. Rev. Mod. Phys. 83 , 1057–1110 (2011)

    work page 2011

  6. [6]

    A., Felser, C

    Bernevig, B. A., Felser, C. & Beidenkopf, H. Progress and prospects in magnetic topological materials. Nature 603 , 41–51 (2022)

    work page 2022

  7. [7]

    Bhattacharyya, S. et al. Recent progress in proximity coupling of magnetism to topological insulators. Adv. Mater. 33 , 2007795 (2021)

    work page 2021

  8. [8]

    Ivanov, O. et al. Asymmetry and parity violation in magnetoresistance of magnetic diluted Dirac–Weyl semimetal (Cd₀.₆Zn₀.₃₆Mn₀.₀₄)₃As₂. Phys. Status Solidi RRL 12 , 1800386 (2018)

    work page 2018

Show all 40 references
  1. [9]

    Uchida, M. et al. Ferromagnetic state above room temperature in a proximitized topological Dirac semimetal. Phys. Rev. B 100 , 245148 (2019). 16

    2019

  2. [10]

    Mogi, M. et al. Large anomalous Hall effect in topological insulat ors with proximitized ferromagnetic insulators. Phys. Rev. Lett. 123 , 016804 (2019)

    2019

  3. [11]

    & Nomura, K

    Kurebayashi, D. & Nomura, K. Weyl semimetal phase i n solid-solution narrow-gap semiconductors. J. Phys. Soc. Jpn 83 , 063709 (2014)

    2014

  4. [12]

    Ji, Y. et al. Thickness-driven quantum anomalous Hall phase tran sition in magnetic topological insulator thin films. ACS Nano 16 , 1134–1141 (2022)

    2022

  5. [13]

    Anh, L. D. et al. Elemental topological Dirac semimetal α-Sn with high quantum mobility. Adv. Mater. 33 , 2104645 (2021)

    2021

  6. [14]

    Polaczyński, J. et al. 3D topological semimetal phases of strained α-Sn o n insulating substrate. Mater. Today 75 , 135–148 (2024)

    2024

  7. [15]

    Engel, A. N. et al. Growth and characterization of α-Sn thin films on In- and Sb-rich reconstructions of InSb(001). Phys. Rev. Mater. 8, 044202 (2024)

    2024

  8. [16]

    & Chen, Y.-F

    Ding, Y., Li, C., Zhou, J., Lu, H. & Chen, Y.-F. Tr ansport evidence of the spin-polarized topological surface states of α-Sn grown on CdTe by molecular beam epitaxy. Appl. Phys. Lett. 121 , 093102 (2022)

    2022

  9. [17]

    Chen, K. H. M. et al. Thickness-dependent topological phase transition a nd Rashba-like preformed topological surface states of α-Sn(001) thin films on InSb(001). Phys. Rev. B 105 , 075109 (2022)

    2022

  10. [18]

    & Liu, F

    Huang, H. & Liu, F. Tensile strained gray tin: Dira c semimetal for observing negative magnetoresistance with Shubnikov–de Haas oscillations. Phys. Rev. B 95 , 201101 (2017)

    2017

  11. [19]

    Rojas-Sánchez, J.-C. et al. Spin to charge conversion at room temperature by spin pumping into a new type of topological insulator: α-Sn films. Phys. Rev. Lett. 116 , 096602 (2016)

    2016

  12. [20]

    Ding, J. et al. Switching of a magnet by spin–orbit torque from a topological Dirac semimetal. Adv. Mater. 33 , 2005909 (2021)

    2021

  13. [21]

    & Hesjedal, T

    Gladczuk, Ł., Gladczuk, L., Dluzewski, P., van der Laan, G. & Hesjedal, T. Study of spin pumping through α-Sn thin films. Phys. Status Solidi RRL 15 , 2100137 (2021)

    2021

  14. [22]

    Zheng, D. et al. Two-dimensional growth of conductive ultra-thin Sn films on insulating substrate with an Fe buffer layer. APL Mater. 8, 061103 (2020)

    2020

  15. [23]

    & Tsukazaki, A

    Satake, Y., Fujiwara, K., Shiogai, J., Seki, T. & Tsukazaki, A. Fe–Sn nanocrystalline films for flexible magnetic sensors with high thermal stability. Sci. Rep. 9, 3282 (2019)

    2019

  16. [24]

    Fujiwara, K. et al. Berry curvature contributions of kagome-lattice fragments in amorphous Fe–Sn thin films. Nat. Commun. 14 , 3399 (2023)

    2023

  17. [25]

    Anh, L. D. et al. Ferromagnetism and giant magnetoresistance in zinc -blende FeAs monolayers embedded in semiconductor structures. Nat. Commun. 12 , 4201 (2021). 17

    2021

  18. [26]

    Magnetic Oscillations in Metals

    Shoenberg, D. Magnetic Oscillations in Metals . (Cambridge Univ. Press, 1984)

    1984

  19. [27]

    Ding, Y. et al. Multiple carrier transport in high-quality α-Sn films grown on CdTe (001) by molecular beam epitaxy. J. Vac. Sci. Technol. A 39 , 033408 (2021)

    2021

  20. [28]

    W., Wong, G

    Tu, L. W., Wong, G. K., Song, S. N., Zhao, Z. & Ketterson, J. B. Growth and characterisation of substrate-stabilised heteroepitaxial grey tin films. Semicond. Sci. Technol. 5, S245 (1990)

    1990

  21. [29]

    Tu, L., Wong, G. K. & Ketterson, J. B. Growth of n-type heteroepitaxial films of gray tin on (001) CdTe by molecular beam epitaxy. Appl. Phys. Lett. 54 , 1010–1012 (1989)

    1989

  22. [30]

    Chen, Y. L. et al. Massive Dirac fermion on the surface of a magnetically doped topological insulator. Science 329 , 659–662 (2010)

    2010

  23. [31]

    & Izumi, F

    Momma, K. & Izumi, F. VESTA 3 for three-dimensional visualization of crystal, volumetric and morphology data. J. Appl. Cryst. 44 , 1272–1276 (2011)

    2011

  24. [32]

    & Hafner, J

    Kresse, G. & Hafner, J. Ab initio molecular dynamic s for liquid metals. Phys. Rev. B 47 , 558–561 (1993)

    1993

  25. [33]

    & Furthmüller, J

    Kresse, G. & Furthmüller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54 , 11169–11186 (1996)

    1996

  26. [34]

    P., Burke, K

    Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 77 , 3865–3868 (1996)

    1996

  27. [35]

    Dudarev, S. L. et al. Electron-energy-loss spectra and the structural stability of nickel oxide: an LSDA+U study. Phys. Rev. B 57 , 1505–1509 (1998)

    1998

  28. [36]

    Barbedienne, Q. et al. Angular-resolved photoemission electron spectroscopy and transport studies of the elemental topological insulator α-Sn. Phys. Rev. B 98 , 195445 (2018)

    2018

  29. [37]

    Farrow, R. F. C. et al. The growth of metastable, heteroepitaxial films of α-Sn by metal beam epitaxy. J. Cryst. Growth 54 , 507–518 (1981)

    1981

  30. [38]

    Küfner, S. et al. Structural and electronic properties of α-tin nanocrystals from first principles. Phys. Rev. B 87 , 235307 (2013)

    2013

  31. [39]

    Shi, Z. et al. First-principles study of the topological surface states of α-Sn(111). Phys. Lett. A 384 , 126782 (2020)

    2020

  32. [40]

    ↑” and “↓

    Barfuss, A. et al. Elemental topological insulator with tunable Fermi level: Strained α-Sn on InSb(001). Phys. Rev. Lett. 111 , 157205 (2013). 18 Figures Figure 1| Schematic illustration of a topological phase transition induced by the magnetic proximity effect (MPE). (a) Left...

    2013

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