Pith. sign in

REVIEW 4 major objections 5 minor 72 references

Microscopic mechanisms of Strong Electron Scattering and Giant Anomalous Hall Effect in high-Curie-temperature Fe3GaTe2 van der Waals Films

T0 review · 4 major / 5 minor · reviewed 2026-08-07 · deepseek-v4-flash

Challenge this review Re-run · record.json Download PDF Read on arXiv ↗

Pith's one-line read The paper claims that the anomalous Hall effect of Fe3GaTe2 films is dominated by positive skew scattering, with smaller negative side-jump and intrinsic Berry-curvature contributions.

desk verdict First clean scaling analysis of the AHE in patterned Fe3GaTe2 Hall bars, with a plausible qualitative conclusion but a fragile quantitative decomposition of skew and side-jump contributions. read the letter →

arxiv 2506.02152 v1 pith:BUIVGG2O submitted 2025-06-02 cond-mat.mtrl-sci

Zhengxiao Li , Xin Lin , Yu Zou , Fanjie Tan , Wenliang Zhu , Lijun Zhu This is my paper
classification cond-mat.mtrl-sci
keywords Fe3GaTe2anomalousHalleffectskewscatteringsidejumpBerrycurvaturevanderWaalsferromagnetelectronscaling
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

The paper asks which microscopic scattering processes produce the strong resistivity and the giant anomalous Hall effect in the room-temperature van der Waals ferromagnet Fe3GaTe2, and whether the three standard Hall mechanisms can be disentangled in this material. By patterning four exfoliated flakes with thicknesses from 31 to 146 nm into Hall bars, the authors measure longitudinal and Hall resistivities from 5 to 360 K and find that the anomalous Hall resistivity follows the three-term scaling law of Eq. (1) throughout the ferromagnetic temperature range. From that scaling they conclude that the Hall effect is dominated by a positive, temperature-independent skew-scattering contribution that is partially cancelled by a negative side-jump contribution and a negative, temperature-dependent intrinsic Berry-curvature contribution. They further find that the intrinsic contribution weakens as impurity scattering increases, the expected dirty-metal behavior. If correct, the result gives a concrete handle: impurity engineering, not just band-structure tuning, controls the anomalous Hall response in Fe3GaTe2.

What carries the argument

The central object is the scaling relation of Eq. (1), $\rho_{AH}=\alpha\rho_{xx0}+\beta\rho_{xx0}^2+b\rho_{xx}^2$, which separates the anomalous Hall resistivity into three contributions: skew scattering, which is linear in the residual resistivity; side jump, which is quadratic in the residual resistivity; and intrinsic Berry curvature, which is proportional to the square of the full longitudinal resistivity and therefore carries the temperature dependence through $\rho_{xx}$. Its validity requires the coefficients $\alpha$, $\beta$, and $b$ to be temperature-independent and the extrinsic terms to be governed only by impurity scattering. The paper's other enabling device is the patterned two-cross Hall bar, which gives uniform current flow and reliable resistivity values that unpatterned flakes cannot provide.

What would settle it

Take a Fe3GaTe2 Hall bar with fixed residual resistivity and vary only the phonon contribution, for example by comparing samples with different isotopic masses or by straining the film to change the Debye temperature; if the intercept of $\rho_{AH}$ versus $\rho_{xx}^2$ shifts with temperature or with phonon mean free path, the temperature-independent assumption behind Eq. (1) fails and the quoted $\alpha$, $\beta$, and $b$ are not the true microscopic coefficients.

Watch

Extended reading notes

Core claim

On the paper's own terms, the central claim is that the anomalous Hall effect of high-quality Fe3GaTe2 films is dominated by a positive, temperature-independent skew scattering that competes with a negative side-jump term and a negative, temperature-dependent intrinsic Berry-curvature term. This conclusion follows from the first successful application to Fe3GaTe2 of the scaling law $\rho_{AH}=\alpha\rho_{xx0}+\beta\rho_{xx0}^2+b\rho_{xx}^2$, with $\alpha = 0.35 \pm 0.04$, $\beta = (-6.07 \pm 1.71)\times 10^{-4}\,(\mu\Omega\,\mathrm{cm})^{-1}$, and the intrinsic anomalous Hall conductivity $b$ varying from $-415$ S/cm at 31 nm to $-1771$ S/cm at 146 nm. The authors interpret the decrease of $b$ with increasing residual resistivity as the dirty-metal suppression of intrinsic Hall conductivity, and the cancellation between positive skew scattering and the increasingly negative intrinsic term as the reason $\rho_{AH}$ grows on cooling.

Load-bearing premise

The decomposition assumes that $\alpha$, $\beta$, and $b$ are fixed constants independent of temperature and that phonon and magnon scattering contribute to $\rho_{xx}$ but not to the skew or side-jump terms; if phonon-induced skew scattering is significant, the extracted coefficients are biased.

Editorial extensions

If this is right

  • Fe3GaTe2 films with thicknesses from 31 to 146 nm obey $\rho_{AH}=0.35\rho_{xx0}-6.07\times10^{-4}\rho_{xx0}^2+b\rho_{xx}^2$ over 5-320 K, so the three Hall mechanisms are separable in this material.
  • The anomalous Hall effect is dominated by positive, temperature-independent skew scattering; the negative intrinsic contribution grows with temperature and cancels part of it, which explains why $\rho_{AH}$ rises on cooling.
  • The intrinsic anomalous Hall conductivity is negative and increases in magnitude from $-415$ S/cm to $-1771$ S/cm as residual resistivity drops, consistent with dirty-metal scaling.
  • Electron scattering is dominated by impurities and phonons regardless of thickness; reducing thickness raises residual resistivity by a factor of 3.5 and thereby changes the balance of Hall contributions.
  • The 146 nm film exhibits a large anomalous Hall angle of 0.18 at 5 K and 0.1 at 300 K, indicating strong potential for Hall-sensor applications.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • If the decomposition is correct, deliberately adding dilute impurities or defects to Fe3GaTe2 should increase the skew-scattering Hall voltage roughly in proportion to residual resistivity, offering a route to even larger anomalous Hall angles than 0.18.
  • The paper attributes the strong thickness dependence of $\rho_{xx0}$ to strain and distortion introduced by exfoliation and transfer; a testable consequence is that annealing or improved transfer techniques that reduce such disorder should shrink $\rho_{xx0}$ and enlarge the intrinsic Berry-curvature contribution toward its clean limit.
  • The same thickness-and-temperature scaling analysis could be applied to other van der Waals ferromagnets such as Fe5GeTe2, where AHE decomposition has been hampered by irregular flake geometries.
  • In cleaner samples, the negative intrinsic term could overtake the positive skew-scattering term at high temperature, flipping the sign of $\rho_{AH}$ as temperature rises.
Share X Bluesky LinkedIn Reddit HN

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

4 major / 5 minor

Summary. The paper reports a transport study of exfoliated Fe3GaTe2 Hall-bar devices at four thicknesses (31–146 nm) and temperatures from 5 to 360 K. The authors show that the longitudinal resistivity is dominated by impurity and phonon scattering, with Tc ≈ 340 K for all thicknesses, and that the anomalous Hall resistivity is large and strongly thickness- and temperature-dependent. They apply the scaling law ρ_AH = α ρ_xx0 + β ρ_xx0^2 + b ρ_xx^2 (Eq. (1)) to separate the anomalous Hall effect into intrinsic, side-jump, and skew-scattering contributions, finding a positive temperature-independent skew-scattering term that dominates, a negative side-jump term, and a negative intrinsic term that grows with temperature and decreases with impurity scattering. The paper claims the first successful scaling decomposition of the AHE for Fe3GaTe2 films.

Significance. If the quantitative decomposition is reliable, the result is significant: it identifies the microscopic origin of the AHE in a room-temperature van der Waals ferromagnet and provides a concrete comparison with the dirty-metal scaling behavior of intrinsic Hall conductivities. The experimental data are of good quality: patterned Hall bars, a high Tc (340 K) matching bulk values, and a systematic thickness series. The paper also demonstrates a giant anomalous Hall angle (up to 0.18 at 5 K) that is useful for spintronic applications. The central qualitative picture—that the AHE magnitude and sign result from competing contributions and that the intrinsic contribution is reduced with increasing disorder—is plausibly correct and well supported by the data. However, the quantitative decomposition into α, β, and b is the load-bearing claim, and it rests on a two-stage fit with limited statistical support.

major comments (4)
  1. [Fig. 3a and Eq. (1)] The extraction of α and β from the intercepts of the ρ_AH versus ρ_xx^2 fits is not statistically supported as presented. The intercepts A(t) = α ρ_xx0(t) + β ρ_xx0(t)^2 are obtained by extrapolating each thickness's data to ρ_xx^2 = 0, which lies far outside the measured range. The manuscript reports no uncertainties on the individual intercepts, no R^2 or χ^2 values for the four linear fits in Fig. 3a, and no error bars on the data points in Fig. 3a. The reported uncertainties on α and β (±0.04 and ±1.71×10^-4 /μΩ cm, respectively) are likely only the least-squares standard errors of the second-stage fit, which ignore the uncertainty of the first-stage intercepts. The authors should provide a full uncertainty propagation, ideally with repeated measurements or at least a sensitivity analysis (e.g., perturbing ρ_AH and ρ_xx by a few percent and re-extracting α and β) to demonstrate that the sign and magnitude of β—and hence the claim that skew scattering dominates—are robust.
  2. [Thickness dependence and the assumption of constant α and β] The scaling analysis assumes that α and β are the same for all four thicknesses and that thickness affects only ρ_xx0 and b. This assumption is questionable for exfoliated flakes: the manuscript itself argues that mechanical exfoliation and transfer introduce strain and distortion (page 3), and that defects near interfaces become more significant in thinner samples. If strain or surface disorder modifies the skew-scattering or side-jump coefficients as a function of thickness, then the two-stage fit will bias the extracted α, β, and b values. The authors should test the stability of their parameters by allowing α and β to vary with thickness (e.g., fitting each thickness separately or adding a thickness-dependent correction) or, at minimum, discuss the magnitude of the possible bias in light of the observed strong thickness dependence of ρ_xx0.
  3. [Temperature dependence of the intercept and phonon contributions] The interpretation of the slope b in Fig. 3a as purely intrinsic assumes that temperature-dependent scattering (phonons, magnons) does not contribute to the extrinsic skew or side-jump terms. This is a standard but nontrivial assumption. If phonon-induced skew scattering were significant, the intercepts A(t) would be temperature-dependent, and the linear fits to ρ_AH versus ρ_xx^2 would absorb that variation. The manuscript states that the high quality of the samples justifies this assumption, but it does not provide an independent test. A concrete check would be to restrict the fits to low temperatures (e.g., T < 100 K) where phonons are frozen out and compare the resulting intercepts and slopes with the full-temperature fits; a significant difference would indicate that phonon contributions are being absorbed into the intrinsic term.
  4. [Quantitative fit quality and device statistics] The paper's central claim that the scaling law (Eq. (1)) holds 'well' in a wide temperature range (5–320 K) would be considerably strengthened by reporting the goodness of fit for the lines in Fig. 3a, the number of temperature points per thickness, and the device-to-device reproducibility. Only one device per thickness is presented, and no error bars are given for ρ_AH or ρ_xx. The absence of these details makes it impossible to judge whether the four intercepts A(t) are sufficiently well determined to separate the linear and quadratic terms in ρ_xx0, which is the crucial step for the sign and magnitude of β.
minor comments (5)
  1. [Page 1, near Eq. (1)] The text states 'losses accuracy'; this should be 'loses accuracy'.
  2. [Fig. 2 caption] The caption reads 'Temperature-dependent measurement o-f the anomalous Hall effect'; the hyphen in 'o-f' appears to be a typo and should be 'of'.
  3. [Fig. 3b] The caption says 'the solid curve represents the quadratic fit' but does not specify the fitted function; it would be helpful to show the functional form (A = α ρ_xx0 + β ρ_xx0^2) and the best-fit values directly on the figure.
  4. [References] Reference [60] is an arXiv preprint (arXiv:2406.02260); if this work has been published in a journal, the citation should be updated. Also, Ref. [66] is a preprint hosted on Research Square; please provide a permanent source or update if it has been peer-reviewed.
  5. [Page 5, exchange bias discussion] The sentence 'the absence of the low-temperature exchange bias in our Fe3GaTe2 samples with large thicknesses should have excluded oxidization as the cause of the low-temperature exchange bias' is logically sound but could be phrased more directly: the absence of exchange bias in all but the thinnest sample suggests oxidation is not the cause.

Circularity Check

0 steps flagged · score 1.0 of 10

No load-bearing circularity: α, β, and b are free parameters extracted from data via an externally established scaling law.

full rationale

The paper's central derivation is a two-stage fitting procedure based on Eq. (1), ρAH = αρxx0 + βρxx02 + bρxx2: linear fits of ρAH versus ρxx2 yield slopes b and intercepts ρAH,extr, and a subsequent quadratic fit of the four intercepts versus ρxx0 yields α = 0.35 ± 0.04 and β = (−6.07 ± 1.71) × 10−4/μΩ cm. None of these parameters is an input that is later relabeled as a prediction; they are the free parameters of the stated scaling law, which is attributed to Refs. [44,47], with Ref. [47] (Tian, Ye, and Jin, PRL 103, 087206) an independent external source. The self-citations, including Ref. [44] by author L. Zhu, are not load-bearing because the scaling form is established independently and the Fe3GaTe2-specific values are data-determined. The 'dirty-metal regime' interpretation is a comparison with previously reported trends rather than a circular derivation. The assumptions that phonon and magnon scattering do not contribute to the extrinsic skew or side-jump terms, and the statistical fragility of the four-intercept decomposition, are correctness and robustness concerns, not circular reductions. No equation in the paper is equivalent by construction to a claimed output, so no specific circular step can be exhibited.

Assumptions & free parameters 3 free parameters · 4 assumptions · 0 invented entities

No new physical entities are introduced. The central claims rest on a phenomenological scaling law from prior literature and on assumptions about the temperature independence of the extrinsic coefficients and the role of thickness as a proxy for impurity scattering.

free parameters (3)
  • alpha (skew-scattering coefficient) = 0.35 +/- 0.04
    Fitted from the quadratic dependence of rho_AH,extr on rho_xx0 for four thicknesses (Fig. 3b); used to assign the positive skew-scattering contribution alpha*rho_xx0.
  • beta (side-jump coefficient) = (-6.07 +/- 1.71) x 10^-4 / (mu Ohm cm)
    Same quadratic fit as alpha; used for negative side-jump contribution beta*rho_xx0^2.
  • b (intrinsic anomalous Hall conductivity) per thickness = -415 S/cm (31 nm), -1771 S/cm (146 nm)
    Obtained from the slopes of rho_AH versus rho_xx^2 in Fig. 3a for each sample; used to infer the dirty-metal trend.
assumptions (4)
  • domain assumption Equation (1): rho_AH = alpha*rho_xx0 + beta*rho_xx0^2 + b*rho_xx^2 holds for Fe3GaTe2 films with temperature-independent alpha, beta, and b.
    Adapted from Refs. [44-47] for high-quality ferromagnets; the paper invokes it to separate AHE contributions. The linearity of rho_AH versus rho_xx^2 is the only evidence for its validity.
  • domain assumption Temperature-dependent scattering (phonons, magnons) contributes negligibly to the extrinsic skew and side-jump AHE terms; the temperature variation of rho_AH arises only from b*rho_xx^2.
    Required for the intercept of the rho_AH versus rho_xx^2 fit to be temperature-independent; the paper asserts this based on sample quality.
  • domain assumption The residual resistivity rho_xx0 is approximated by the minimum of rho_xx near low temperature.
    Used in the definition of rho_AH,extr and in fitting alpha and beta; the weak low-temperature upturn makes this approximate.
  • domain assumption The four exfoliated flakes are representative of the same material with only thickness varying; thickness dependence of rho_xx and b is attributed to bulk and surface defect scattering.
    The paper infers the dirty-metal regime trend from four samples, assuming no other thickness-dependent changes in band structure or magnetism.

how reviews work

0 comments
Cite this review

Pith. "Pith review of Microscopic mechanisms of Strong Electron Scattering and Giant Anomalous Hall Effect in high-Curie-temperature Fe3GaTe2 van der Waals Films." pith.science (2026). https://pith.science/paper/BUIVGG2O

@misc{pith2026250602152,
  author       = {Pith},
  title        = {Pith review of: Microscopic mechanisms of Strong Electron Scattering and Giant Anomalous Hall Effect in high-Curie-temperature Fe3GaTe2 van der Waals Films},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/BUIVGG2O}},
  note         = {Machine review of arXiv:2506.02152}
}
read the original abstract

Van der Waals ferromagnet Fe3GaTe2 with room-temperature perpendicular magnetic anisotropy and strong anomalous Hall effect has attracted considerable interest for their potential in spintronics. However, the microscopic mechanisms and manipulation of the electron scattering and the anomalous Hall effect of Fe3GaTe2 have remained unsettled. Here, we demonstrate strong tuning of the electron scattering and anomalous Hall effect of pattern-defined Fe3GaTe2 Hall-bar devices with perpendicular magnetic anisotropy, high Curie temperature (340 K, as high as that of Fe3GaTe2 bulk), and giant anomalous Hall effect by varying the layer thickness and temperature. Temperature-dependent resistivity experiments reveal that the electron scattering of the high-quality Fe3GaTe2 is dominated by impurity scattering and phonon scattering, regardless of the thickness. Combined temperature- and thickness-dependent scaling analyses of the anomalous Hall resistivity reveal that the anomalous Hall effect of the Fe3GaTe2 is predominantly from the positive, temperature-independent skew-scattering contribution that competes with negative temperature-independent, side-jump contribution, and negative, temperature-dependent intrinsic Berry-curvature contribution. The intrinsic anomalous Hall conductivity decreases rapidly with increasing impurity scattering, which is consistent with the characteristic variation of intrinsic Hall conductivities in the dirty-metal regime. These findings advance the understanding of electron scattering and the anomalous Hall effect in van der Waals magnets and would benefit the application of the Fe3GaTe2 in spintronics.

Figures

Figures reproduced from arXiv: 2506.02152 by the authors.

Figure 4
Figure 4. Giant anomalous Hall effect. Comparison of (a) the anomalous Hall resistivity |ρAH|, (b) the anomalous Hall angle |ρAH/ρxx|, and the longitudinal resistivity (ρxx) at 5 K and 300 K for the Fe3GaTe2 and other representative magnetic films (Fe [47], Co [45], Ni [46], L10-FePt [67], A1-FePt [67] Co40Fe40B20 [72], Mn1.5Ga [44], MnAl [48], and Fe5GeTe2 [73] ), highlighting the giant AHE of the Fe3GaTe2. The slope and int… view at source ↗

Discussion (0). Sign in to comment.

Reference graph

Works this paper leans on

72 extracted references · 69 canonical work pages

  1. [1]

    Kurebayashi, J

    H. Kurebayashi, J. H. Garcia, S. Khan, J. Sinova, and S. Roche, Magnetism, symmetry and spin transport in van der Waals layered systems, Nat. Rev. Phys. 4, 150 (2022)

    work page 2022

  2. [2]

    Z. Jia, M. Zhao, Q. Chen, Y . Tian, L. Liu, F. Zhang, D. Zhang, Y . Ji, B. Camargo, K. Ye, R. Sun, Z. Wang, Y . Jiang, Spintronic Devices upon 2D Magnetic Materials and Heterojunctions, ACS Nano 19, 9452 (2025)

    work page 2025

  3. [3]

    C. Gong, L. Li, Z. Li, H. Ji, A. Stern, Y . Xia, T. Cao, W. Bao, C. Wang, Y . Wang, Z. Q. Qiu, R. J. Cava, S. G. Louie, J. Xia, and X. Zhang, Discovery of intrinsic ferromagnetism in two -dimensional van der Waals crystals, Nature 546, 265 (2017)

    work page 2017

  4. [4]

    X. Cai, T. Song, N. P. Wilson, G. Clark, M. He, X. Zhang, T. Taniguchi, K. Watanabe, W. Yao, D. Xiao, M. A. McGuire, D. H. Cobden, and X. Xu, Atomically Thin CrCl 3: An In -Plane Layered Antiferromagnetic Insulator, Nano Lett. 19, 3993 (2019)

    work page 2019

  5. [5]

    Huang, G

    B. Huang, G. Clark, E. Navarro-Moratalla, D. R. Klein, R. Cheng, K. L. Seyler, D. Zhong, E. Schmidgall, M. A. McGuire, D. H. Cobden, W. Yao, D. Xiao, P. Jarillo - Herrero, and X. Xu, Layer -dependent ferromagnetism in a van der Waals crystal down to the monolayer limit, Nature 546, 270 (2017)

    work page 2017

  6. [6]

    J.-U. Lee, S. Lee, J. H. Ryoo, S. Kang, T. Y . Kim, P. Kim, C. -H. Park, J. -G. Park, and H. Cheong, Ising - Type Magnetic Ordering in Atomically Thin FePS 3, Nano Lett. 16, 7433 (2016)

    work page 2016

  7. [7]

    W. Zhu , C. Song , Q. Wang , H. Bai , S. Yin, F. Pan, Anomalous displacement reaction for synthesizing above-room-temperature and air -stable vdW ferromagnet PtTe2Ge1/3, National Science Review, 10, nwac173 (2023)

    work page 2023

  8. [8]

    Zhang, T

    W. Zhang, T. Ma, B. K. Hazra, H. Meyerheim, P. Rigvedi, Z. Yin, A. K. Srivastava, Z. Wang, K. Gu, S. Zhou, S. Wang, S. -H. Yang, Y . Guan, S. S. P. Parkin, Current-induced domain wall motion in a van der Waals ferromagnet Fe3GeTe2, Nat. Commun. 15, 4851 (2024)

    work page 2024

Show all 72 references
  1. [9]

    H. Wang, H. Wu, J. Zhang, Y . Liu, D. Chen, C. Pandey, J. Yin, D. Wei, N. Lei, S. Shi, H. Lu, P. Li, A. Fert, K. L. Wang, T. Nie, W. Zhao, Room temperature energy - efficient spin -orbit torque switching in two - dimensional van der Waals Fe 3GeTe2 induced by topological insul...

    2023

  2. [10]

    R. Zhao, W. Xu, Y . Wu, X. Liu, Z. Zhang, M. Zhu, L. Zhang, J. Shen, S. Shen, H. Huang, J. Zhang, X. Zheng, S. Wang, Self -Modulated Magnetism in Two - Dimensional Ferromagnet Fe 3GeTe2 Induced by Ambient Effects, ACS Appl. Nano Mater. 6, 20982 (2023)

    2023

  3. [11]

    Y . Deng, Y . Yu, Y . Song, J. Zhang, N. Z. Wang, Z. Sun, Y . Yi, Y . Z. Wu, S. Wu, J. Zhu, J. Wang, X. H. Chen, and Y . Zhang, Gate -tunable room -temperature ferromagnetism in two -dimensional Fe 3GeTe2, Nature 563, 94 (2018)

    2018

  4. [12]

    J. Seo, D. Y . Kim, E. S. An, K. Kim, G.-Y . Kim, S.-Y . Hwang, D. W. Kim, B. G. Jang, H. Kim, G. Eom, S. Y . Seo, R. Stania, M. Muntwiler, J. Lee, K. Watanabe, T. Taniguchi, Y . J. Jo, J. Lee, B. I. Min, M. H. Jo, H. W. Yeom, S.-Y . Choi, J. H. Shim, and J. S. Kim, Nearly roo...

    2020

  5. [13]

    A. F. May, D. Ovchinnikov, Q. Zheng, R. Hermann, S. Calder, B. Huang, Z. Fei, Y . Liu, X. Xu, and M. A. McGuire, Ferromagnetism Near Room Temperature in the Cleavable van der Waals Crystal Fe 5GeTe2, ACS Nano 13, 4436 (2019)

    2019

  6. [14]

    X. Wang, J. Tang, X. Xia, C. He, J. Zhang, Y . Liu, C. Wan, C. Fang, C. Guo, W. Yang, Y . Guang, X. Zhang, H. Xu, J. Wei, M. Liao, X. Lu, J. Feng, X. Li, Y . Peng, H. Wei, R. Yang, D. Shi, X. Zhang, Z. Han, Z. Zhang, G. Zhang, G. Yu, and X. Han, Current-driven 7 magnetization ...

    2019

  7. [15]

    H. Xu, K. Jia, Y . Huang, F. Meng, Q. Zhang, Y . Zhang, C. Cheng, G. Lan, J. Dong, J. Wei, J. Feng, C. He, Z. Yuan, M. Zhu, W. He, C. Wan, H. Wei, S. Wang, Q. Shao, L. Gu, M. Coey, Y . Shi, G. Zhang, X. Han, and G. Yu, Electrical detection of spin pumping in van der Waals ferr...

    2023

  8. [16]

    Y . Wang, C. Xian, J. Wang, B. Liu, L. Ling, L. Zhang, L. Cao, Z. Qu, and Y . Xiong, Anisotropic anomalous Hall effect in triangular itinerant ferromagnet Fe3GeTe2, Phys. Rev. B 96, 134428 (2017)

    2017

  9. [17]

    Y . Deng, Z. Xiang, B. Lei, K. Zhu, H. Mu, W. Zhuo, X. Hua, M. Wang, Z. Wang, G. Wang, M. Tian, and X. Chen, Layer -Number-Dependent Magnetism and Anomalous Hall Effect in van der Waals Ferromagnet Fe5GeTe2, Nano Lett. 22, 9839 (2022)

    2022

  10. [18]

    Z. Chen, Y . Yang, T. Ying, and J. Guo, High‑Tc Ferromagnetic Semiconductor in Thinned 3D Ising Ferromagnetic Met al Fe 3GaTe2, Nano. Lett. 24, 993 (2024)

    2024

  11. [19]

    Zhang, F

    G. Zhang, F. Guo, H. Wu, X. Wen, L. Yang, W. Jin, W. Zhang, and H. Chang, Above-room-temperature strong intrinsic ferromagnetism in 2D van der Waals Fe3GaTe2 with large perpendicular magnetic anisotropy, Nat. Commun. 13, 5067 (2022)

    2022

  12. [20]

    S. Wu, Z. He, M. Gu, L. Ren, J. Li, B. Deng, D. Wang, X. Guo, W. Li, M. Chen, Y . Chen, M. Meng, Q. Ye, B. Shen, X. Chen, J. Guo, G. Xing, I. K. Sou, and S. Li, Robust ferromagnetism in wafer-scale Fe3GaTe2 above room-temperature, Nat. Commun. 15, 10765 (2024)

    2024

  13. [21]

    Zhang, J

    G. Zhang, J. Yu, H. Wu, L. Yang, W. Jin, W. Zhang, and H. Chang, Field-free room-temperature modulation of magnetic bubble and stripe domains in 2D van der Waals ferromagnetic Fe 3GaTe2, Appl. Phys. Lett. 123, 101901 (2023)

    2023

  14. [22]

    M. Wang, B. Lei, K. Zhu, Y . Deng, M. Tian, Z. Xiang, T. Wu, and X. Chen, Hard ferromagnetism in van der Waals Fe3GaTe2 nanoflake down to monolayer, npj 2D Mater. Appl. 8, 22 (2024)

    2024

  15. [23]

    S. Jin, Y . Wang, H. Zheng, S. Dong, K. Han, Z. Wang, G. Wang, X. Jiang, X. Wang, J. Hong, H. Huang, Y . Zhang, T.-L. Xia, and X. Wang, Thickness - and Field- Dependent Magnetic Domain Evolution in van der Waals Fe3GaTe2, Nano Lett. 24, 5467 (2024)

    2024

  16. [24]

    C. Liu, S. Zhang, H. Hao, H. Algaidi, Y . Ma, and X.- X. Zhang, Magnetic Skyrmions above Room Temperature in a van der Waals Ferromagnet Fe3GaTe2, Adv. Mater. 36, 2311022 (2024)

    2024

  17. [25]

    X. Lin, L. Zhu ，Magnetization switching in van der Waals systems by spin -orbit torque, Mater . Today Electron. 4, 100037 (2023). [26] W. Li, W. Zhu, G. Zhang, H. Wu, S. Zhu, R. Li, E. Zhang, X. Zhang, Y . Deng, J. Zhang, L. Zhao, H. Chang, and K. Wang, Room-Temperature van de...

    2023

  18. [27]

    C. Yun, H. Guo, Z. Lin, L. Peng, Z. Liang, M. Meng, B. Zhang, Z. Zhao, L. Wang, Y . Ma, Y . Liu, W. Li, S. Ning, Y . Hou, J. Yang, and Z. Luo, Efficient current - induced spin torques and field -free magnetization switching in a room-temperature van der Waals magnet, Sci. Adv....

    2023

  19. [28]

    S. N. Kajale, T. Nguyen, C. A. Chao, D. C. Bono, A. Boonkird, M. Li, and D. Sarkar, Current -induced switching of a van der Waals ferromagnet at room temperature, Nat. Commun. 15, 1485 (2024)

    2024

  20. [29]

    Zhang, X

    Y . Zhang, X. Ren, R. Liu, Z. Chen, X. Wu, J. Pang, W. Wang, G. Lan, K. Watanabe, T. Taniguchi, Y . Shi, G. Yu, and Q. Shao, Robust Field-Free Switching Using Large Unconventional Spin -Orbit Torque in an All -Van der Waals Heterostructure, Adv. Mater. 36, 2406464 (2024)

    2024

  21. [30]

    W. Zhu, S. Xie, H. Lin, G. Zhang, H. Wu, T. Hu, Z. Wang, X. Zhang, J. Xu, Y . Wang, Y . Zheng, F. Yan, J. Zhang, L. Zhao, A. Patané, J. Zhang, H. Chang, and K. Wang, Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions, Chin. Phys. Lett...

    2022

  22. [31]

    W. Jin, G. Zhang, H. Wu, L. Yang, W. Zhang, and H. Chang, Room -Temperature and Tunable Tunneling Magnetoresistance in Fe 3GaTe2-Based 2D van der Waals Heterojunctions, ACS Appl. Mater. Interfaces 15, 36519 (2023)

    2023

  23. [32]

    L. Zhu, L. Zhu, M. Sui, D. C. Ralph, R. A. Buhrman, Variation of the giant spin Hall conductivity of Pt with carrier lifetime, Sci. Adv. 5, eaav8025 (2019)

    2019

  24. [33]

    L. Zhu, K. Sobotkiewich, X. Ma, X. Li, D. C. Ralph, R. A. Buhrman, Strong and tunable anti-damping spin- orbit torque and Dzyaloshinskii -Moriya interaction generated by low-resistivity Pd1-xPtx alloys, Adv. Funct. Mater. 29, 1805822 (2019)

    2019

  25. [34]

    Zhu, Switching of Perpendicular Magnetization by Spin-Orbit Torque, Adv

    L. Zhu, Switching of Perpendicular Magnetization by Spin-Orbit Torque, Adv. Mater. 35, 2300853 (2023)

    2023

  26. [35]

    Zhu and D.C

    L. Zhu and D.C. Ralph, Strong variation of spin-orbit torques with relative spin relaxation rates in ferrimagnets, Nat. Commun. 14, 1778 (2023)

    2023

  27. [36]

    X. Lin, J. Li, L. Zhu, X. Xie, Q. Liu, D. Wei, G. Yuan, and L. Zhu, Strong enhancement of spin -orbit torques in fe rrimagnetic Pt x(Si3N4)1–x/CoTb bilayers by Si 3N4 doping, Phys. Rev. B 106, L140407 (2022)

    2022

  28. [37]

    Q. Liu, L. Zhu, X. S. Zhang, D. A. Muller, and D. C. Ralph, Giant bulk spin –orbit torque and efficient electrical switching in single ferrimagnetic FeTb layers with strong perpendicular magnetic anisotropy, Appl. Phys. Rev. 9 (2022)

    2022

  29. [38]

    Q. Liu, L. Liu, G. Xing, and L. Zhu, Asymmetric magnetization switching and programmable complete Boolean logic enabled by long -range intralayer Dzyaloshinskii-Moriya interaction, Nat. Commun. 15, 2978 (2024)

    2024

  30. [39]

    Q. Liu, X. Lin, Z. Nie, G. Yu, and L. Zhu, Efficient generation of out -of-plane polarized spin current in polycrystalline heavy metal devices with broken electric symmetries, Adv. Mater. 36, 2406552 (2024)

    2024

  31. [40]

    L. Zhu, S. Nie, P. Xiong, P. Schlottmann, and J. Zhao, Orbital two -channel Kondo effect in epitaxial ferromagnetic L10-MnAl films, Nat. commun. 7, 10817 (2016)

    2016

  32. [41]

    L. Zhu, G. Woltersdorf, and J. Zhao, Observation of orbital two -channel Kondo effect in a ferromagnetic L10-MnGa film, Sci. Rep. 6, 34549 (2016)

    2016

  33. [42]

    Zhu and J

    L. Zhu and J. Zhao, Anomalous resistivity upturn in epitaxial L21-Co2MnAl films, Sci. Rep. 7, 42931(2017). 8

    2017

  34. [43]

    L. Zhu, L. Zhu, Q. Liu, and X. Lin, Giant coercivity, resistivity upturn, and anomalous Hall effect in ferrimagnetic FeTb, Phys. Rev. B 108, 014420 (2023)

    2023

  35. [44]

    L. Zhu, D. Pan, and J. Zhao, Anomalous Hall effect in epitaxial L10-Mn1.5Ga films with variable chemical ordering, Phys. Rev. B 89, 220406 (2014)

    2014

  36. [45]

    D. Hou, Y . Li, D. Wei, D. Tian, L. Wu, and X. Jin, The anomalous Hall effect in epitaxial face -centered-cubic cobalt films, J. Phys. Condens. Matter. 24, 482001 (2012)

    2012

  37. [46]

    L. Ye, Y . Tian, X. Jin, and D. Xiao, Temperature dependence of the intrinsic anoma lous Hall effect in nickel, Phys. Rev. B 85, 220403 (2012)

    2012

  38. [47]

    Y . Tian, L. Ye, and X. Jin, Proper Scaling of the Anomalous Hall Effect, Phys. Rev. Lett. 103, 087206 (2009)

    2009

  39. [48]

    L. Zhu, S. Nie, and J. Zhao, Anomalous Hall effect in L10−MnAl films with co ntrollable orbital two -channel Kondo effect, Phys. Rev. B 93, 1951129 (2016)

    2016

  40. [49]

    Lyanda-Geller, S

    Y . Lyanda-Geller, S. H. Chun, M. B. Salamon, P. M. Goldbart, P. D. Han, Y . Tomioka, A. Asamitsu, and Y . Tokura, Charge transport in manganites: Hopping conduction, the anoma lous Hall effect, and universal scaling, Phys. Rev. B 63, 184426 (2001)

    2001

  41. [50]

    Algaidi, C

    H. Algaidi, C. Zhang, C. Liu, Y . Ma, D. Zheng, P. Li, and X. Zhang, Room -temperature unconventional topological Hall effect in a van der Waals ferromagnet Fe3GaTe2, APL Mater. 13, 011108 (2025)

    2025

  42. [51]

    S. Liu, S. Hu, X. Cui, and T. Kimura, Efficient Thermo-Spin Conversion in van der Waals Ferromagnet FeGaTe, Adv. Mater. 36, 2309776 (2024)

    2024

  43. [52]

    Iimori, S

    R. Iimori, S. Hu, A. Mitsuda, T. Kimura, Substantial enhancement of perpendicular magneti c anisotropy in van der Waals ferromagnetic Fe 3GaTe2 film due to pressure application. Commun. Mater. 5, 235 (2024)

    2024

  44. [53]

    Y . Dong, X. Long, X. Lv, Y . Huang, M. Zhang, R. Che and G. Cao, Low -temperature electron -electron interaction correction to the anomalous Hall effect in Fe3GaTe2 single crystals, J. Phys. Conden. Matter. DOI 10.1088/1361-648X/adcb0f (2025)

    2025 doi

  45. [54]

    L. Zhu, X. S. Zhang, D. A. Muller, D. C. Ralph, and R. A. Buhrman, Observation of strong bulk damping - like spin -orbit torque in chemically disordered ferromagnetic single layers, Adv. Funct. Mater. 30, 2005201 (2020)

    2020

  46. [55]

    H. Feng, Y. Li, Y. Shi, H . Xie, Y. Li, and Y. Xu, Resistance anomaly and linear magnetoresistance in thin flakes of itinerant ferromagnet Fe 3GeTe2, Chin. Phys. Lett. 39, 077501 (2022)

    2022

  47. [56]

    C. R. Woods, L. Britnell, A. Eckmann, R. S. Ma, J. C. Lu, H. M. Guo, X. Lin, G. L. Yu, Y . Cao, R. V . Gorbachev, A. V . Kretinin, J. Park, L. A. Ponomarenko, M. I. Katsnelson, Yu. N. Gornostyrev, K. Watanabe, T. Taniguchi, C. Casiraghi, H-J. Gao, A. K. Geim & K. S. Novoselov,...

    2014

  48. [57]

    Y . Wu, W. Wang, L. Pan, and K. L. Wang, Manipulating Exchange Bias in a Van der Waals Ferromagnet, Adv. Mater. 34, 2105266 (2022)

    2022

  49. [58]

    D. Liu, F. Pei, S. Wang, X. Chen, Y . Yuan, J. Zhao, J. Guo, T. Wang, L. Li, X. Kan, Z. Liao, D. Song, X. Liu, Y . Fang, S. Wang, S. Zhou, Z. Q. Qiu, H. Huang, M. Yang, and Q. Li, Manipulation of Exchange Bias in Two-Dimensional van der Waals Ferromagnet Near Room Temperature,...

    2024

  50. [59]

    Maniv, R

    E. Maniv, R. A. Murphy, S. C. Haley, S. Doyle, C. John, A. Maniv, S. K. Ramakrishna, Y . -L. Tang, P. Ercius, R. Ramesh, A. P. Reyes, J. R. Long, and J. G. Analytis, Exchange bias due to coupling between coexisting antiferromagnetic and spin-glass orders, Nat. Phys. 17, 525 (2021)

    2021

  51. [60]

    J. Shao, X. Yin, C. Bao, S. Lu, X. Ma, S. Guo, L. Wang, X. Zhang, Z. Li, L. Li, Y . Zhao, and T. Chen, Near - Room-Temperature Field-Controllable Exchange Bias in 2D van der Waals Ferromagnet Fe 3GaTe2, arXiv:2406.02260 (2024)

    2024 arXiv

  52. [61]

    O. J. Lee, L. Liu, C. Pai, Y . Li, H. Tseng, P. G. Gowtham, J. P. Park, D. C. Ralph, and R. A. Buhrman, Central role of domain wall depinning for perpendicular ma gnetization switching driven by spin torque from the spin Hall effect, Phys. Rev. B 89, 024418 (2014)

    2014

  53. [62]

    Pizzini, J

    S. Pizzini, J. V ogel, S. Rohart, L. D. Buda-Prejbeanu, E. Jué, O. Boulle, I. M. Miron, C. K. Safeer, S. Auffret, G. Gaudin, and A. Thiaville, Chirality -Induced Asymmetric Magnetic Nucleation in Pt/Co/AlO 𝑥 Ultrathin Microstructures, Phys. Rev. Lett. 113, 047203 (2014)

    2014

  54. [63]

    Jungwirth, Q

    T. Jungwirth, Q. Niu, and A. H. MacDonald, Anomalous Hall Effect in Ferromagnetic Semiconductors, Phys. Rev. Lett. 88, 207208 (2002)

    2002

  55. [64]

    Berger, Side -Jump Mechanism for the Hall Effect of Ferromagnets, Phys

    L. Berger, Side -Jump Mechanism for the Hall Effect of Ferromagnets, Phys. Rev. B 2, 4559 (1970)

    1970

  56. [65]

    Smit, The spontaneous hall effect in ferromagnetics II, Physica 24, 39 (1958)

    J. Smit, The spontaneous hall effect in ferromagnetics II, Physica 24, 39 (1958)

    1958

  57. [66]

    Zhang, A

    Z. Zhang, A. Rahman, M. U. Rehman, D. Ma i, Z. Muhammad, K. Ruan, R. Dai, Z. Wang, L. Zhang, and Z. Chen, Emergent Magnetic Phases with Robust Two- Dimensional Spin Interactions and Electronic Transport in Above -Room Temperature Ferromagnet Fe3GaTe2, https://doi.org/10.21203/...

    doi

  58. [67]

    M. Chen, Z. Shi, W. J. Xu, X. X. Zhang, J. Du, and S. M. Zhou, Tuning anomalous Hall conductivity in L10 FePt films by long range chemical ordering, Appl. Phys, Lett. 98, 082503 (2011)

    2011

  59. [68]

    Z. B. Guo, W. B. Mi, J. Q. Li, Y . C. Cheng, and X. X. Zhang, Enhancement in anomalous Hall resistivity of Co/Pd multilayer and CoPd alloy by Ga+ ion irradiation, EPL 105, 46005 (2014)

    2014

  60. [69]

    Q. Liu, J. Li, L. Zhu, X. Lin, X. Xie, and L. Zhu, Strong Spin-Orbit Torque Induced by the Intrinsic Spin Hall Effect in Cr 1−xPtx, Phys. Rev. Appl. 18, 054079 (2022)

    2022

  61. [70]

    L. Zhu , R. A. Buhrman, Maximizing spin torque efficiency of Pt/Ti multilayers: Tradeoff between intrinsic spin Hall conductivity and carrier lifetime, Phys. Rev. Appl. 12, 051002 (2019)

    2019

  62. [71]

    L. Zhu, L. Zhu, S. Shi, M. Sui, D. C. Ralph, R. A. Buhrman, Enhancing spin -orbit torque by strong interfacial scattering from ultrathin insertion layers, Phys. Rev. Appl. 11, 061004 (2019)

    2019

  63. [72]

    G. Su, Y . Li, D. Hou, X. Jin, H. Liu, and S. Wang, Anomalous Hall effect in amorphous Co40Fe40B20, Phys. Rev. B 90, 214410 (2014). 9

    2014

  64. [73]

    Suzuki, T

    R. Suzuki, T. Gao, H. Nakayama, and K. Ando, Extrinsic anomalous Hall effect in van der Waals ferromagnet Fe 5GeTe2, AIP Advances 13, 055311 (2023)

    2023

Pith tools

Reviewed August 7, 2026 · model on record in the stance chip above.