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Spin Dynamics and Light-Induced Effects in EuZn$_2$P$_2$

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arxiv 2506.07681 v1 pith:ICE5M3JA submitted 2025-06-09 cond-mat.str-el

classification cond-mat.str-el
keywords deltaspineuznmagneticanisotropicbehaviordynamicselectron
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abstract

The magnetic spin dynamics and optical properties of EuZn$_2$P$_2$ are studied. Single crystals grown by the Sn-flux method crystallize in the $P\overline{3}m1$ (No.~164) space group and order antiferromagnetically at $T_N=23.5$~K. $^{151}$Eu M\"ossbauer spectroscopy confirms the presence of the Eu$^{2+}$ oxidation state only and the magnetic moment angle relative to the $c$-axis is $\theta=46(3)$\textdegree. Temperature-dependent electron spin resonance (ESR) measurements reveal that spin-spin interactions predominantly govern the spin relaxation mechanisms, as evidenced by the linewidth behavior ($\Delta H$). Positive $g$-shifts ($\Delta g)$ for $H \parallel ab$ indicate the presence of local electron polarization. The ESR data support the formation of anisotropic magnetic polarons, which trap spin carriers and contribute to increased electrical resistance. Angular-dependent ESR spectra at room temperature display anisotropic behavior in both $\Delta g(\phi)$ and $\Delta H(\phi)$, with a dominant three-dimensional component $C_{3D}$, indicative of robust interlayer coupling and antiferromagnetic fluctuations. Under light illumination, a small broadening of $\Delta H$ is observed. Furthermore, a photovoltaic effect is identified in EuZn$_2$P$_2$, with photodetector performance metrics suggesting promising capabilities for future optoelectronic devices.

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Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score. Full citation record

  1. Engineering a Correlated Narrow-Gap Semiconductor: Effects of Ga Substitution in EuZn$_2$P$_2$

    cond-mat.mtrl-sci 2025-12 conditional novelty 5.0 of 10

    Gallium substitution in EuZn2P2 lowers resistivity by roughly two orders of magnitude, reduces the activation gap to about 63 meV, and preserves a ~90% negative magnetoresistance at 45 K.

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