Paper Citation Record · LEDGER

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC

As of 18 August 2026, this Paper Citation Record lists 42 of 42 outbound references and 1 inbound Pith citation observation for arXiv:2506.17478.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
2506.17478 v1

Coverage vector

measured 42 of 42 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-08-15T19:12:57.833649Z

measured 43 of 43 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-17T06:30:58.91139+00:00

measured 1 of 1 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links, observed 2026-08-03T06:48:45.051825Z

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: cited_works

Reference resolution

42 of 42 outbound references displayed

verified exact0
verified fuzzy20
unresolved22
parse uncertain0
malformed identifier0
metadata mismatch0

External citation measurements

No source-named external measurement is stored.

Outbound references

Observation 83b13c5c-4c01-4690-82ac-3c6553889e62 · outbound

This paper cites The magnetic field along the vertical axis is 5.46 mT/A, with experiments performed at either 100 mA (0.55 mT) or 300 mA (1.64 mT).

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC The magnetic field along the vertical axis is 5.46 mT/A, with experiments performed at either 100 mA (0.55 mT) or 300 mA (1.64 mT)

Reference 1

Resolution: verified fuzzy; raw_fallback, observed 2026-08-15T19:12:58.245102Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 3071b727-9c28-4246-8383-4a3718bf727f · outbound

This paper cites Figure 1.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Figure 1

Reference 2

Resolution: verified fuzzy; raw_fallback, observed 2026-08-15T19:12:58.268237Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 3cbf32c6-6818-4e5b-ad8a-ed7c99c5cd35 · outbound

This paper cites an unresolved cited work.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Unresolved cited work

Reference 3

Resolution: unresolved; no resolver link, observed 2026-08-15T19:12:57.607998Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 94421afb-49f3-48a1-85f2-392c8b3c3669 · outbound

This paper cites an unresolved cited work.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Unresolved cited work

Reference 4

Resolution: unresolved; raw_fallback, observed 2026-08-15T19:12:58.217668Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 70ddf69b-a4e5-43ff-82a7-d5513ad678a7 · outbound

This paper cites Kraus, V.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Kraus, V

Reference 5

Resolution: verified fuzzy; raw_fallback, observed 2026-08-15T19:12:58.200262Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 13aa29f8-3895-4663-9568-45d9b4a715a5 · outbound

This paper cites an unresolved cited work.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Unresolved cited work

Reference 6

Resolution: unresolved; raw_fallback, observed 2026-08-15T19:12:58.182734Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 573db157-da80-48df-8bea-9ab0977eb1e3 · outbound

This paper cites Simin et al., All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide, Phys Rev X 6, 031014 (2016).

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Simin et al., All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide, Phys Rev X 6, 031014 (2016)

Reference 7

Resolution: verified fuzzy; raw_fallback, observed 2026-08-15T19:12:58.165196Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 57fb344c-2ff9-4ef2-a1a5-e8d877757496 · outbound

This paper cites an unresolved cited work.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Unresolved cited work

Reference 8

Resolution: unresolved; raw_fallback, observed 2026-08-15T19:12:58.147456Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 2b1cf78a-c56b-43bc-ba02-9a3e0c5a6204 · outbound

This paper cites an unresolved cited work.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Unresolved cited work

Reference 9

Resolution: unresolved; raw_fallback, observed 2026-08-15T19:12:58.127872Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 6a5a89bf-3581-4225-a69c-e19b4b726e86 · outbound

This paper cites Wolfowicz, S.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Wolfowicz, S

Reference 10

Resolution: verified fuzzy; raw_fallback, observed 2026-08-15T19:12:58.110103Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 4a0c93d8-5b92-4dc7-9c39-551251a76d35 · outbound

This paper cites an unresolved cited work.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Unresolved cited work

Reference 11

Resolution: unresolved; raw_fallback, observed 2026-08-15T19:12:58.092465Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 6b4043d4-9b3c-42fd-81e1-bbbd83451ca1 · outbound

This paper cites Lekavicius, S.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Lekavicius, S

Reference 12

Resolution: verified fuzzy; raw_fallback, observed 2026-08-15T19:12:58.075703Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 586f991a-d19d-4851-ac07-52dd6c3eb3de · outbound

This paper cites an unresolved cited work.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Unresolved cited work

Reference 13

Resolution: unresolved; raw_fallback, observed 2026-08-15T19:12:58.059695Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 9381e6c3-940e-4435-bbf2-935535ae9570 · outbound

This paper cites an unresolved cited work.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Unresolved cited work

Reference 14

Resolution: unresolved; no resolver link, observed 2026-08-15T19:12:57.676905Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation b139fbc2-3ca5-4479-957e-061b3352c1ab · outbound

This paper cites an unresolved cited work.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Unresolved cited work

Reference 15

Resolution: unresolved; raw_fallback, observed 2026-08-15T19:12:58.031978Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 9f8cc09c-c4ac-491c-ad08-030b88384a35 · outbound

This paper cites Quantum communication networks with defects in silicon carbide.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Quantum communication networks with defects in silicon carbide

Reference 16

Resolution: unresolved; no resolver link, observed 2026-08-15T19:12:57.691000Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation e5c10cca-754d-45af-ad0e-92ab0ddfbb79 · outbound

This paper cites Castelletto, A.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Castelletto, A

Reference 17

Resolution: verified fuzzy; raw_fallback, observed 2026-08-15T19:12:58.006836Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 629e2819-6cee-48a3-95f6-2eded6a3b447 · outbound

This paper cites Babin et al., Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence, Nat.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Babin et al., Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence, Nat

Reference 18

Resolution: unresolved; no resolver link, observed 2026-08-15T19:12:57.700919Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 190577f4-c5f6-4342-b39b-591eebb8cf70 · outbound

This paper cites Heiler et al., Spectral stability of V2 centres in sub-micron 4H-SiC membranes, Npj Quantum Mater.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Heiler et al., Spectral stability of V2 centres in sub-micron 4H-SiC membranes, Npj Quantum Mater

Reference 19

Resolution: verified fuzzy; raw_fallback, observed 2026-08-15T19:12:57.974753Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 6e6e587e-d8d8-404a-b330-63fa2f09b888 · outbound

This paper cites an unresolved cited work.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Unresolved cited work

Reference 20

Resolution: unresolved; raw_fallback, observed 2026-08-15T19:12:57.953627Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 0eb651e7-1f21-4741-a6b8-e999323984f6 · outbound

This paper cites an unresolved cited work.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Unresolved cited work

Reference 21

Resolution: unresolved; raw_fallback, observed 2026-08-15T19:12:57.934750Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 823714b5-4450-430a-9e11-a1cd7d000a83 · outbound

This paper cites Steidl et al., Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature, Nat.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Steidl et al., Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature, Nat

Reference 22

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T23:36:19.244743Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation bd5451ec-13a3-45b8-8466-f9a66fc509c1 · outbound

This paper cites an unresolved cited work.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Unresolved cited work

Reference 23

Resolution: unresolved; raw_fallback, observed 2026-08-06T23:36:18.977967Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation ad2c59e0-712b-45e9-b291-bd1fe10d5681 · outbound

This paper cites an unresolved cited work.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Unresolved cited work

Reference 24

Resolution: unresolved; raw_fallback, observed 2026-08-06T23:36:18.717276Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation b1577586-f40f-417e-bcb0-3e4d6487fbfc · outbound

This paper cites Fuchs, V.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Fuchs, V

Reference 25

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T23:36:18.357235Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 9c2fe528-fd30-4f35-afe8-76943c446d91 · outbound

This paper cites an unresolved cited work.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Unresolved cited work

Reference 26

Resolution: unresolved; raw_fallback, observed 2026-08-06T23:36:18.194749Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation b37db641-8336-4453-b2e6-87bf7bceed53 · outbound

This paper cites Lekavicius, D.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Lekavicius, D

Reference 27

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T23:36:17.794746Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation c8b42367-b30e-4630-9100-64fba19e9c6d · outbound

This paper cites Garsi et al., Non-invasive imaging of three-dimensional integrated circuit activity using quantum defects in diamond, Phys.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Garsi et al., Non-invasive imaging of three-dimensional integrated circuit activity using quantum defects in diamond, Phys

Reference 28

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T23:36:17.461790Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation a7be39d5-d966-46e5-b900-01ad37ac531d · outbound

This paper cites an unresolved cited work.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Unresolved cited work

Reference 29

Resolution: unresolved; no resolver link, observed 2026-08-15T19:12:57.756278Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 2dae937f-2a75-49cb-af37-b0f97bad437a · outbound

This paper cites Janzén, A.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Janzén, A

Reference 30

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T23:36:17.246080Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 51131d2b-41df-438d-8dd4-7b1de25607c8 · outbound

This paper cites Kraus, V.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Kraus, V

Reference 31

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T23:36:17.024831Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 01491d70-e762-446c-af9e-a9b920e994ab · outbound

This paper cites Castelletto, B.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Castelletto, B

Reference 32

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T23:36:16.761154Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 55972a4b-ffa0-42a0-b2ca-51e4112f61b5 · outbound

This paper cites an unresolved cited work.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Unresolved cited work

Reference 33

Resolution: unresolved; raw_fallback, observed 2026-08-06T23:36:16.418006Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 2c55a4d5-d751-421c-bc28-6353887ebecf · outbound

This paper cites an unresolved cited work.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Unresolved cited work

Reference 34

Resolution: unresolved; raw_fallback, observed 2026-08-06T23:36:16.044753Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 5682e01e-42f4-4720-b66a-14fae6b194be · outbound

This paper cites Wimbauer, B.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Wimbauer, B

Reference 35

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T23:36:15.684750Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation f249dc92-2d1c-4554-a52d-9b8192898a93 · outbound

This paper cites Wagner, B.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Wagner, B

Reference 36

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T23:36:15.391115Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 3397c95f-eaab-4a16-81f2-62d4fe6100d5 · outbound

This paper cites Kasper et al., Influence of Irradiation on Defect Spin Coherence in Silicon Carbide, Phys.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Kasper et al., Influence of Irradiation on Defect Spin Coherence in Silicon Carbide, Phys

Reference 37

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T23:36:14.914842Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 5b7acd6f-8919-4213-9354-9f78916dbaff · outbound

This paper cites Giannozzi et al., QUANTUM ESPRESSO: A modular and open-source software project for quantum simulations of materials, J.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Giannozzi et al., QUANTUM ESPRESSO: A modular and open-source software project for quantum simulations of materials, J

Reference 38

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T23:36:14.444749Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 50823823-cef9-45d5-9a2c-2a18497819ab · outbound

This paper cites an unresolved cited work.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Unresolved cited work

Reference 39

Resolution: unresolved; raw_fallback, observed 2026-08-06T23:36:14.124743Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation 6140bcf8-c129-427f-aaf1-9aee67b46577 · outbound

This paper cites an unresolved cited work.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Unresolved cited work

Reference 40

Resolution: unresolved; no resolver link, observed 2026-08-15T19:12:57.820471Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.

Observation 24531234-4d7a-42f7-bad8-d552849f39b6 · outbound

This paper cites an unresolved cited work.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Unresolved cited work

Reference 41

Resolution: unresolved; raw_fallback, observed 2026-08-06T23:36:13.763804Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Observation f3a4ea5f-d847-4441-a663-68e694d6033c · outbound

This paper cites Joshi and P.

The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC Joshi and P

Reference 42

Resolution: verified fuzzy; raw_fallback, observed 2026-08-06T23:36:13.413904Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-17T06:30:58.91139+00:00.

Pith citing papers

Observation 5b0c38af-4589-41be-9803-02b79fbd666e · inbound

Designing quantum technologies with a quantum computer cites this paper.

Designing quantum technologies with a quantum computer The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC

Reference 4

Resolution: unresolved; no resolver link, observed 2026-08-03T06:48:45.051825Z

Source-reported events for the cited work

Unavailable: canonical work link unavailable.