Pith. sign in

REVIEW 3 major objections 5 minor 65 references

Wafer-scale Programmed Assembly of One-atom-thick Crystals

T0 review · 3 major / 5 minor · reviewed 2026-08-06 · deepseek-v4-flash

Challenge this review Re-run · record.json Download PDF Read on arXiv ↗

Pith's one-line read Programmed dry stacking builds wafer-scale films of 2D crystals with pristine interfaces.

desk verdict A genuinely useful wafer-scale dry-stacking capability for graphene/hBN with strong interface evidence, but the 'near-unity yield' claim is not supported by the area-averaged optics. read the letter →

arxiv 2507.22677 v1 pith:UUXHYJH3 submitted 2025-07-30 cond-mat.mtrl-sci

Seong-Jun Yang , Ju-Hyun Jung , Eunsook Lee , Edmund Han , Min-Yeong Choi , Daesung Jung , Shinyoung Choi , Jun-Ho Park
show 6 more authors
Dongseok Oh Siwoo Noh Ki-Jeong Kim Pinshane Y. Huang Chan-Cuk Hwang Cheol-Joo Kim
This is my paper
classification cond-mat.mtrl-sci
keywords graphenehexagonalboronnitridevanderWaalsheterostructurestwo-dimensionalmaterialswafer-scaleassemblytwistedmultilayertunneljunctionsprogrammedcrystal
verification ladder T0 review T1 audit T2 compute T3 formal

The pith

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The reading

The paper reports programmed crystal assembly (PCA), an all-dry method for stacking graphene and monolayer hexagonal boron nitride into wafer-scale films with atomically clean interfaces. The central claim is that epitaxial films grown on Ge(110) can be peeled and re-stacked repeatedly, van der Waals forces doing the work, to build multilayers whose layer composition and twist angle are set in advance. Because the interfaces stay pristine, the resulting films behave like single crystals: hBN tunnel barriers show thickness-controlled resistance over orders of magnitude, and twisted multilayer graphene shows the mini-gaps and symmetry-broken bands predicted for chiral and achiral stacks. If the method works as claimed, clean, wafer-scale van der Waals heterostructures become a routine platform for electronics and for testing correlated and topological states.

What carries the argument

The central object is the one-atom-thick crystal itself, grown epitaxially on Ge(110) and used as a reusable assembly unit. The mechanical trick is that the interaction energy between the Ge(110) substrate and the as-grown film is lower than the van der Waals binding between layered materials, so a film capped with a soft gold layer can be peeled off dry, aligned with straight crystalline edges to set the twist angle, stacked, and the cycle repeated. The gold support makes conformal contact and is removed only after the stack is complete, keeping polymers and etchants away from the interfaces. The straight edges of the Ge(110) wafer serve as a global angular reference, so the twist angle at each interface is set by optical alignment rather than by post-hoc characterization.

What would settle it

A decisive observation would be to cut cross-sections at several random positions of a wafer-scale PCA stack and use atomic-resolution EELS or EDS to search for a continuous contamination layer, such as amorphous hydrocarbon, at any graphene/hBN or graphene/graphene interface.

Watch

Extended reading notes

Core claim

The central discovery is that atomically clean, wafer-scale assembly of graphene and monolayer hBN is achievable by exploiting the weak van der Waals interaction between the as-grown films and their Ge(110) growth substrates. Because the film-substrate bond is weaker than the interlayer bond within layered crystals, a film can be peeled off dry with a gold support, placed on another as-grown film, and the cycle repeated, with no polymer or etchant touching the interfaces. The paper demonstrates the result in two working systems: vertical graphene/hBN superlattices with alternating chemical composition, and twisted multilayer graphene in which each interface is rotated by a programmed angle, including chiral twisted graphite (constant rotation sense) and achiral twisted graphite (alternating sign). The evidence includes cross-sectional STEM and EELS showing pristine interfaces and consistent interlayer spacings of $\d_z = 3.37$ Å for graphene/hBN and $3.41$ Å for twisted graphene, XRD showing coherent diffraction over millimeter scales, tunnel devices whose resistance scales exponentially with hBN layer number, and ARPES showing angle-dependent mini-gaps and hybridized parabolic bands.

Load-bearing premise

The method assumes that graphene and hBN monolayers grown on Ge(110) can be peeled off and re-stacked many times in dry conditions without losing their single-crystal orientation or picking up contamination at the new interfaces.

Editorial extensions

If this is right

  • hBN tunnel barriers made by PCA show zero-bias resistance-area products that scale exponentially with the number of monolayers, meaning the barrier thickness is controlled one atom at a time across a centimeter-scale array.
  • Chiral twisted graphite with a constant rotation sense shows equally spaced hybridized Dirac bands with mini-gaps of about 200 meV, while alternating-twist graphite shows a larger mini-gap of about 300 meV from collective hybridization across interfaces.
  • The measured interlayer spacing of twisted graphite rises by about 2% from 3.34 Å at zero twist to a plateau at twist angles above 3°, matching a relaxation model, which means the assembled stacks take on the equilibrium structure of clean interfaces.
  • The assembly unit extends beyond graphene and hBN: a graphene/MoS2 superlattice was formed with near-unity yield, so metal, semiconductor, and insulator layers can be assembled in programmed sequences.
  • Optical circular dichroism in chiral twisted graphite strengthens with the number of layers, indicating that multi-interface properties scale predictably when the interfaces are pristine.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • If the central claim holds, the usual size-versus-yield trade-off of exfoliation-based assembly disappears, so experiments that need many clean interfaces at once, such as magic-angle hierarchies in N-layer twisted graphene, could be run on centimeter-scale samples instead of micrometer flakes.
  • The edge-alignment trick sets twist angles from the Ge(110) crystal edges; a natural extension is to test whether the same geometry can lock angles after stacking through moiré reconstruction, which would matter for devices needing angles near the magic angle.
  • The pristine-interface claim rests on spectroscopy and imaging that show no contaminants; an independent check would be to compare transport or optical linewidths of PCA-made stacks with those of exfoliated pick-up stacks of the same geometry.
  • Because the process uses a gold support and thermal release tape, it could plausibly be automated and integrated into a fabrication line, a path the paper does not itself detail.
Share X Bluesky LinkedIn Reddit HN

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, and a circularity audit.

Referee Report

3 major / 5 minor

Summary. The paper reports a dry, wafer-scale 'programmed crystal assembly' (PCA) process in which epitaxial monolayer graphene and monolayer hBN grown on Ge(110) are repeatedly exfoliated and stacked under van der Waals control. The authors claim atomically pristine interfaces, near-unity stacking yield, layer-resolved chemical and twist-angle control, and demonstrate these via graphene/hBN superlattices, twisted multilayer graphene with programmed band structures, and batch-fabricated tunnel junctions whose resistance is controlled by hBN barrier thickness with single-atom precision. The evidence base includes cross-sectional STEM/EELS, LEED, XRD, XPS, AFM, optical absorption and hyperspectral imaging, ARPES, and circular dichroism measurements.

Significance. If the central claims hold, PCA would be a substantial advance: it would make wafer-scale, atomically clean van der Waals heterostructures of graphene and hBN routinely available, enabling artificial structures that are currently limited to small exfoliated flakes. The paper deserves credit for the breadth and independence of its structural characterization: STEM/EELS directly images alternating C/N layers, the XRD coherence length approaches the full stack thickness, LEED confirms wafer-scale crystallographic alignment, and ARPES resolves mini-gaps in twisted trilayers. The main weaknesses are that the 'near-unity yield' claim rests on area-averaged optical absorption rather than a direct measure of stack completeness, and that the tunneling-model agreement is weakened by a fitted barrier height reused as an input. These are load-bearing for the two headline capabilities, but they are addressable with additional analysis or reframing.

major comments (3)
  1. [Main text, 'Wafer-scale PCA' (Fig. 2d; fig. S7)] The 'near-unity yield' claim is not established by the reported optical absorption data. Absorption measured over a macroscopic area is an average over the illuminated region, so it constrains the mean number of layers per unit area, not the fraction of the area in which all NL layers are actually present. If each layer is transferred independently with success probability p, the average absorption is linear in NL with slope p times the monolayer absorption, even when p is substantially below 1; for p=0.98 and NL=10 the average absorption would be about 98% of ideal while only about 82% of the area contains a complete stack, and for p=0.95 only about 60% of the area is complete. The R0A data in Fig. 3b, moreover, are measured on small, selected junction areas and cannot report wafer-scale completeness. Because 'near-unity yield' is repeated in the abstract and conclusion, the authors should either provide spatially resolved layer-count statistics over millimeter or wafer scales, or revise the claim to 'high average layer coverage' and state the distinction explicitly.
  2. [Supporting Text, 'Tunneling model' and 'Estimation of tunneling barrier height' (Eqs. 1-3)] The tunneling model validation contains a circular element. The barrier height phi is fitted to the same NL-dependent R0A data that the model is then used to explain, and the phonon energy threshold of ±63 meV is introduced as an additional input when simulating dI/dV. The agreement between the simulated and measured dI/dV curves in Fig. 3d is therefore not an independent confirmation of pristine interfaces. The consistency of the fitted 3.0 eV with the cited ARPES value is suggestive, but consistency with an external value is not the same as using that external value as a fixed input. The authors should either fix phi from the ARPES value and then treat the R0A fit as a predictive test, or show explicitly that the dI/dV features (positions of VA and VD and the zero-bias dip) are insensitive to the fitted phi and to the phonon threshold within reasonable ranges.
  3. [Main text and Fig. 1e, twist-angle control] The claim that twist angles are controlled to within about ±1° is supported by a single TEM diffraction pattern of one CTG stack and by LEED patterns in fig. S6. The edge-based alignment method is plausible and the LEED data in fig. S6E are encouraging, but the reported angle accuracy should be supported by statistics over multiple samples and over larger areas. If the PCA method is to be sold as providing programmable band structures with reliable twist control, a quantitative distribution of achieved theta_i across multiple wafers and stacks should be reported.
minor comments (5)
  1. [Main text, Fig. 3b] The sentence 'J decreased significantly by ~1 % per layer as NL increased' appears to be a typo; the data in Fig. 3b show a decrease of roughly one order of magnitude per hBN layer, not 1%. Please correct this to avoid confusion.
  2. [Figure 2f caption vs. main text] The main text refers to 'a theoretical model20' for the dz vs. theta_i dependence, while the Fig. 2f caption cites reference 18 for the theoretical values. These citations are inconsistent and should be reconciled.
  3. [Supporting Text, 'Circular dichroism from multilayer CTG'] The statement that chiro-optical spectral weight increases with NL is shown only up to NL=6 (fig. S18), yet the text says this demonstrates properties 'in multilayer films with large NL.' Please qualify the claim to the measured range or provide data for larger NL.
  4. [Main text, 'Wafer-scale PCA' (Fig. 2d)] The phrase 'Near-unity yield of stacking over a macroscopic area was also confirmed by optical absorption measurements' is misleading because, as discussed in the major comments, absorption is an areal average. At minimum, rephrase to 'consistent with a high average layer coverage' and cite the limitation.
  5. [Methods, 'Tunneling current measurement'] The phrase 'The current densities J normalized by the junction area' is redundant; current density is already normalized by area. Consider simplifying to 'The current densities J were measured...'.

Circularity Check

1 steps flagged · score 3.0 of 10

Fitted tunnel-barrier height is reused in dI/dV simulation, so the pristine-interface confirmation is only a self-consistency check; central PCA claims remain independently supported.

  1. fitted input called prediction [Main text 'Batch-fabricated tunnel devices' (p. 8) and Supporting Text 'Tunneling model for vertical transports across Gr/hBN/Au junctions' / 'Estimation of tunneling barrier height']
    "We fitted the NL-dependent R0A with a basic tunneling equation by taking the barrier height as a free parameter on the assumption that hBN layers have ideal thicknesses with pristine interfaces... The simulated dI/dV curve (Figure 3d inset) obtained using a phonon-mediated tunneling model for hole-transports (fig. S13) agrees well with the experimental data; this result confirms the formation of pristine interface with minimized defect-mediated tunneling."

    The barrier height used in the dI/dV simulation is not independently determined: the Supporting Text states that the simulation used the barrier height 'deduced from [NL]-dependent R0A,' and that deduction was itself performed 'by taking the barrier height as a free parameter on the assumption that hBN layers have ideal thicknesses with pristine interfaces.' Therefore the subsequent agreement of the simulated dI/dV curve with experiment cannot independently confirm the pristine-interface assumption; it is a self-consistency check within one fitted model.

full rationale

The central PCA claims—wafer-scale uniform films, pristine interfaces, twist control, and programmable band structures—are supported by independent measurements including cross-sectional STEM/EELS, LEED, XRD Scherrer coherence-length analysis, ARPES, and circular dichroism, so the main derivation is self-contained. The one genuine circular element is in the Gr/hBN/Au tunnel-device section: the barrier height is fitted to the NL-dependent R0A of the same junctions under an assumed pristine-interface/ideal-thickness model, and the same fitted value is then fed into the dI/dV simulation whose agreement is presented as confirming pristine interfaces. That agreement is therefore not an independent test of cleanliness; it is a consistency check within one fitted model. This is a side demonstration, not the load-bearing evidence for wafer-scale yield or pristine interfaces. The optical-absorption 'near-unity yield' argument is an averaging-inference limitation rather than a circularity: the deduced monolayer absorption is compared with an external reference, so no fitted parameter is renamed as the conclusion, although full-stack completeness is not directly resolved. No load-bearing self-citation was found; reference 19 is the authors' prior dry-transfer work, but the present paper demonstrates the dry stacking directly and the cited work is externally published. Score 3 reflects one partial fitted-input circularity in a non-central demonstration.

Assumptions & free parameters 2 free parameters · 7 assumptions · 0 invented entities

The central claims rely on material-growth and transfer assumptions rather than on newly invented entities. The only numerical parameter fitted to data is the hBN tunneling barrier height; the phonon threshold is also an input to the tunneling simulation. No new physical entities are postulated.

free parameters (2)
  • hBN tunneling barrier height = 3.0 eV
    Fitted to the layer-dependent R0A data using Eq. 3 in the supporting text, then used as an input to simulate the dI/dV curve.
  • Phonon energy threshold = 63 meV
    Introduced in the tunneling simulation to reproduce the zero-bias dip in dI/dV; value is taken from prior phonon energy literature (ref 23), but it is a hand-set threshold in the model.
assumptions (7)
  • domain assumption Epitaxial graphene and hBN on Ge(110) are single-crystalline with one crystallographic orientation across a 2-inch wafer.
    LEED data in Fig. 2b and fig. S5 support this, but all subsequent orientation control depends on this uniformity.
  • domain assumption The interaction energy between Ge(110) and the as-grown films is low enough for repeated all-dry mechanical exfoliation.
    Main text: "the interaction energy between the Ge(110) substrate and the as-grown films is lower than between layered materials".
  • domain assumption Twist angle can be set from straight wafer edges to within about one degree.
    Main text and fig. S6 describe edge-based alignment; TEM diffraction shows about one degree alignment for one stack.
  • domain assumption hBN layers in the tunnel devices have ideal thickness and pristine interfaces.
    Main text states the barrier fit is made "on the assumption that hBN layers have ideal thicknesses with pristine interfaces".
  • standard math Tunneling model assumptions from prior literature (no in-plane momentum conservation, constant Au density of states, isotropic hBN barrier).
    Supporting text Eqs. 1-3 are based on refs 21 and 55; the authors note the isotropic-barrier assumption was previously confirmed.
  • standard math Scherrer equation with shape factor K = 0.9 converts XRD peak width to coherent thickness.
    Used to infer atomically clean interfaces across millimeter scale from XRD coherence length.
  • domain assumption The theoretical dz versus twist-angle relation from ref 20 applies to the measured multilayer films.
    Used in Fig. 2f; the authors note the model is for a single interface and may underestimate multilayer dz.

how reviews work

0 comments
Cite this review

Pith. "Pith review of Wafer-scale Programmed Assembly of One-atom-thick Crystals." pith.science (2026). https://pith.science/paper/UUXHYJH3

@misc{pith2026250722677,
  author       = {Pith},
  title        = {Pith review of: Wafer-scale Programmed Assembly of One-atom-thick Crystals},
  year         = {2026},
  howpublished = {\url{https://pith.science/paper/UUXHYJH3}},
  note         = {Machine review of arXiv:2507.22677}
}
read the original abstract

Crystalline films offer various physical properties based on the modulation of their thicknesses and atomic structures. The layer-by-layer assembly of atomically thin crystals provides powerful means to arbitrarily design films at the atomic-level, which are unattainable with existing growth technologies. However, atomically-clean assembly of the materials with high scalability and reproducibility remains challenging. We report programmed crystal assembly (PCA) of graphene and monolayer hexagonal boron nitride (ML hBN), assisted by van der Waals interactions, to form wafer-scale films of pristine interfaces with near-unity yield. The atomic configurations of the films are tailored with layer-resolved compositions and in-plane crystalline orientations. We demonstrate batch-fabricated tunnel device arrays with modulation of the resistance over orders of magnitude by thickness-control of the hBN barrier with single-atom precision, and large-scale, twisted multilayer graphene with programmable electronic band structures and crystal symmetries. Our results constitute an important development in the artificial design of large-scale films.

Figures

Figures reproduced from arXiv: 2507.22677 by the authors.

Figure 1
Figure 1. Artificial van der Waals films with high [PITH_FULL_IMAGE:figures/full_fig_p020_1.png] view at source ↗
Figure 2
Figure 2. Wafer-scale PCA process for atomic-scale structural engineering. (a) Schematics of assembly of one-atom-thick crystals, which is conducted in all-dry conditions by exploiting van der Waals interactions. (b) LEED pattern of as-grown graphene (left) and hBN (right) on Ge(110) substrates. (c) A grayscale optical image of wafer-scale, assembled graphene films on a SiO2/Si substrate. (d) Optical absorption values at 2 eV… view at source ↗
Figure 3
Figure 3. Batch-fabricated tunnel devices. (a) Schematic (left) and optical image (right) of batch-fabricated Gr/hBN/Au tunnel junctions by PCA. (b) J-V curves for hBN tunneling barriers with different NL. (Inset: NL-dependent R0A, averaged from multiple devices with a fitting (dashed line) by a tunneling model.) (c) Schematics of band diagrams at different V, for local minima of dI/dV (d) dI/dV-V curve for NL = 3. (Inset: Si… view at source ↗

Discussion (0). Sign in to comment.

Reference graph

Works this paper leans on

65 extracted references · 65 canonical work pages

  1. [5]

    H.; Hovden, R.; Tsen, A

    Yoo, H.; Engelke, R.; Carr, S.; Fang, S.; Zhang, K.; Cazeaux, P.; Sung, S. H.; Hovden, R.; Tsen, A. W.; Taniguchi, T.; Watanabe, K.; Yi, G.-C.; Kim, M.; Luskin, M.; Tadmor, E. B.; Kaxiras, E.; Kim, P. Atomic and electronic reconstruction at the van der Waals interface in twisted bilayer graphene. Nat. Mater. 2019, 18, 448–453. 15

    work page 2019

  2. [11]

    K.; Andersen, T.; Fei, Z.; Goldflam, M

    Dai, S.; Ma, Q.; Liu, M. K.; Andersen, T.; Fei, Z.; Goldflam, M. D.; Wagner, M.; Watanabe, K.; Taniguchi, T.; Thiemens, M.; Keilmann, F.; Janssen, G. C. A. M.; Zhu, S.-E.; Jarillo-Herrero, P.; Fogler, M. M.; Basov, D. N. Graphene on hexagonal boron nitride as a tunable hyperbolic metamaterial. Nat. Nanotechnol. 2015, 10, 682–686. 16

    work page 2015

  3. [17]

    A.; Brocks, G.; Kelly, P

    Giovannetti, G.; Khomyakov, P. A.; Brocks, G.; Kelly, P. J.; van den Brink, J. Substrate-induced band gap in graphene on hexagonal boron nitride: Ab initio density functional calculations. Phys. Rev. B 2007, 76, 073103. 17

    work page 2007

  4. [23]

    W.; Wang, F.; Girit, C.; Yayon, Y.; Panlasigui, M.; Zettl, A.; Crommie, M

    Zhang, Y.; Brar, V. W.; Wang, F.; Girit, C.; Yayon, Y.; Panlasigui, M.; Zettl, A.; Crommie, M. F. Giant phonon-induced conductance in scanning tunnelling spectroscopy of gate-tunable graphene. Nat. Phys. 2008, 4, 627–630. 18

    work page 2008

  5. [30]

    Strong mid-infrared photoresponse in small-twist-angle bilayer graphene

    Deng, B.; Ma, C.; Wang, Q.; Yuan, S.; Watanabe, K.; Taniguchi, T.; Zhang, F.; Xia, F. Strong mid-infrared photoresponse in small-twist-angle bilayer graphene. Nat. Photonics 2020, 14, 549–553. 19

    work page 2020

  6. [35]

    ! " !" !

    Fang, H.; Battaglia, C.; Carraro, C.; Nemsak, S.; Ozdol, B.; Kang, J. S.; Bechtel, H. A.; Desai, S. B.; Kronast, F.; Unal, A. A.; Conti, G.; Conlon, C.; Palsson, G. K.; Martin, M. C.; Minor, A. M.; Fadley, C. S.; Yablonovitch, E.; Maboudian, R.; Javey, A. Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides. P...

    work page 2014

  7. [36]

    A.; Park, J

    Kang, K.; Lee, K.-H.; Han, Y.; Gao, H.; Xie, S.; Muller, D. A.; Park, J. Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures. Nature 2017, 550, 229–233

    work page 2017

  8. [37]

    B.; Digani, J.; Zhu, H.; Choudhury, T

    Kumar, P.; Lynch, J.; Song, B.; Ling H.; Barrera, F.; Kisslinger, K.; Zhang, H.; Anantharaman, S. B.; Digani, J.; Zhu, H.; Choudhury, T. H.; McAleese, C.; Wang, X.; Conran, B. R.; Whear, O.; Motala, M. J.; Snure, M.; Muratore, C.; Redwing, J. M.; Glavin, N. R.; Stach, E. A.; Davoyan, A. R.; Jariwala, D. Light–matter coupling in large-area van der Waals su...

    work page doi:10.1038/s41565-021-01023-x 2021

Show all 65 references
  1. [38]

    Chiral atomically thin films

    Kim, C.-J.; Sánchez-Castillo, A.; Ziegler, Z.; Ogawa, Y.; Noguez, C.; Park, J. Chiral atomically thin films. Nat. Nanotechnol. 2016, 11, 520–524

    2016

  2. [39]

    H.; Hovden, R.; Tsen, A

    Yoo, H.; Engelke, R.; Carr, S.; Fang, S.; Zhang, K.; Cazeaux, P.; Sung, S. H.; Hovden, R.; Tsen, A. W.; Taniguchi, T.; Watanabe, K.; Yi, G.-C.; Kim, M.; Luskin, M.; Tadmor, E. B.; Kaxiras, E.; Kim, P. Atomic and electronic reconstruction at the van der Waals interface in twist...

    2019

  3. [40]

    Unconventional superconductivity in magic-angle graphene superlattices

    Cao, Y.; Fatemi, V.; Fang, S.; Watanabe, K.; Taniguchi, T.; Kaxiras, E.; Jarillo-Herrero, P. Unconventional superconductivity in magic-angle graphene superlattices. Nature 2018, 556, 43–50

    2018

  4. [41]

    Nam, Y.; Ki, D.-K.; Soler-Delgado, D.; Morpurgo, A. F. A family of finite-temperature electronic phase transitions in graphene multilayers. Science 2018, 362, 324–328

    2018

  5. [42]

    Pristine graphene insertion at the metal/semiconductor interface to minimize metal-induced gap states

    Park, J.-H.; Yang, S.-J.; Choi, C.-W.; Choi, S.-Y.; Kim, C.-J. Pristine graphene insertion at the metal/semiconductor interface to minimize metal-induced gap states. ACS Appl. Mater. Interfaces 2021, 13, 22828–22835

    2021

  6. [43]

    V.; Kaiser, U.; Smet, J

    Kühne, M.; Börrnert, F.; Fecher, S.; Ghorbani-Asl, M.; Biskupek, J.; Samuelis, D.; Krasheninnikov, A. V.; Kaiser, U.; Smet, J. H. Reversible superdense ordering of lithium between two graphene sheets. Nature 2018, 564, 234–239 (2018)

    2018

  7. [44]

    H.; Tan, P.-H.; Libisch, F.; Li, X

    Quan, J.; Linhart, L.; Lin, M.-L.; Lee, D.; Zhu, J.; Wang, C.-Y.; Hsu, W.-T.; Choi, J.; Embley, J.; Young, C.; Taniguchi, T.; Watanabe, K.; Shih, C.-K.; Lai, K.; MacDonald, A. H.; Tan, P.-H.; Libisch, F.; Li, X. Phonon renormalization in reconstructed MoS2 moiré superlattices....

    2021

  8. [45]

    K.; Andersen, T.; Fei, Z.; Goldflam, M

    Dai, S.; Ma, Q.; Liu, M. K.; Andersen, T.; Fei, Z.; Goldflam, M. D.; Wagner, M.; Watanabe, K.; Taniguchi, T.; Thiemens, M.; Keilmann, F.; Janssen, G. C. A. M.; Zhu, S.-E.; Jarillo-Herrero, P.; Fogler, M. M.; Basov, D. N. Graphene on hexagonal boron nitride as a tunable hyperbo...

    2015

  9. [46]

    Y.; Gao, Q.; Gao, Y.; Tran, H.; Taniguchi, T.; Watanabe, K.; Campos, L

    Wang, L.; Meric, I.; Huang, P. Y.; Gao, Q.; Gao, Y.; Tran, H.; Taniguchi, T.; Watanabe, K.; Campos, L. M.; Muller, D. A.; Guo, J.; Kim, P.; Hone, J.; Shepard, K. L.; Dean, C. R. One-dimensional electrical contact to a two-dimensional material. Science 2013, 342, 614–617

    2013

  10. [47]

    H.; Li, Q.; Wang, J.; Hone, J.; Zhu, X.-Y.; Disassembling 2D van der Waals crystals into macroscopic monolayers and reassembling into artificial lattices

    Liu, F.; Wu, W.; Bai, Y.; Chae, S. H.; Li, Q.; Wang, J.; Hone, J.; Zhu, X.-Y.; Disassembling 2D van der Waals crystals into macroscopic monolayers and reassembling into artificial lattices. Science 2020, 367, 903–906

    2020

  11. [48]

    K.; Joo, W.-J.; Jang, Y.; Kim, B.-S.; Lim, J

    Lee, J.-H.; Lee, E. K.; Joo, W.-J.; Jang, Y.; Kim, B.-S.; Lim, J. Y.; Choi, S.-H.; Ahn, S. J.; Ahn, J. R.; Park, M.-H.; Yang, C.-W.; Choi, B. L.; Hwang, S.-W.; Whang, D. Wafer-scale growth of single-crystal monolayer graphene on reusable hydrogen-terminated germanium. Science ...

    2014

  12. [49]

    S.; Choi, S

    Lee, J. S.; Choi, S. H.; Yun, S. J.; Kim, Y. I.; Boandoh, S.; Park, J.-H.; Shin, B. G.; Ko, H.; Lee, S. H.; Kim, Y.-M.; Lee, Y. H.; Kim, K. K.; Kim, S. M. Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation. Science 2018, 362, 817–821

    2018

  13. [50]

    Graphene annealing: How clean can it be? Nano Lett

    Lin, Y.-C.; Lu, C.-C.; Yeh, C.-H.; Jin, C.; Suenaga, K.; Chiu, P.-W. Graphene annealing: How clean can it be? Nano Lett. 2012, 12, 414–419

    2012

  14. [51]

    A.; Brocks, G.; Kelly, P

    Giovannetti, G.; Khomyakov, P. A.; Brocks, G.; Kelly, P. J.; van den Brink, J. Substrate-induced band gap in graphene on hexagonal boron nitride: Ab initio density functional calculations. Phys. Rev. B 2007, 76, 073103. 40

    2007

  15. [52]

    Aligned growth of hexagonal boron nitride monolayer on germanium

    Yin, J.; Liu, X.; Lu, W.; Li, J.; Cao, Y.; Li, Y.; Xu, Y.; Li, X.; Zhou, J.; Jin, C.; Guo, W. Aligned growth of hexagonal boron nitride monolayer on germanium. Small 2015, 11, 5375–5380

    2015

  16. [53]

    Yang, S.-J.; Choi, S.; Ngome, F. O. O.; Kim, K.-J.; Choi, S.-Y.; Kim, C.-J.; All-dry transfer of graphene film by van der Waals interactions. Nano Lett. 2019, 19, 3590–3596

    2019

  17. [54]

    Wijk, M. M. v.; Schuring, A.; Katsnelson, M. I.; Fasolino, A. Relaxation of moiré patterns for slightly misaligned identical lattices: graphene on graphite. 2D Mater. 2015, 2, 034010

    2015

  18. [55]

    V.; Jalil, R.; Belle, B

    Britnell, L.; Gorbachev, R. V.; Jalil, R.; Belle, B. D.; Schedin, F.; Mishchenko, A.; Georgiou, T.; Katsnelson, M. I.; Eaves, L.; Morozov, S. V.; Peres, N. M. R.; Leist, J.; Geim, A. K.; Novoselov, K. S.; Ponomarenko, L. A. Field-effect tunnelling transistor based on vertical ...

    2013

  19. [56]

    G.; Bertran, F.; Fevre, P

    Pierucci, D.; Zribi, J.; Henck, H.; Chaste, J.; Silly, M. G.; Bertran, F.; Fevre, P. L.; Gil, B.; Summerfield, A.; Beton, P. H.; Novikov, S. V.; Cassabois, G.; Rault, J. E.; Ouerghi, A. Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam ep...

    2018

  20. [57]

    W.; Wang, F.; Girit, C.; Yayon, Y.; Panlasigui, M.; Zettl, A.; Crommie, M

    Zhang, Y.; Brar, V. W.; Wang, F.; Girit, C.; Yayon, Y.; Panlasigui, M.; Zettl, A.; Crommie, M. F. Giant phonon-induced conductance in scanning tunnelling spectroscopy of gate-tunable graphene. Nat. Phys. 2008, 4, 627–630. 41

    2008

  21. [58]

    Pal, A.; Mele, E. J. Nodal surfaces in photoemission from twisted bilayer graphene. Phys. Rev. B. 2013, 87, 205444

    2013

  22. [59]

    Ultraheavy and ultrarelativistic dirac quasiparticles in sandwiched graphenes

    Carr, S.; Li, C.; Zhu, Z.; Kaxiras, E.; Sachdev, S.; Kruchkov, A. Ultraheavy and ultrarelativistic dirac quasiparticles in sandwiched graphenes. Nano Lett. 2020, 20, 3030−3038

    2020

  23. [60]

    M.; Ledwith, P.; Khalaf, E.; Najafabadi, D

    Hao, Z.; Zimmerman, A. M.; Ledwith, P.; Khalaf, E.; Najafabadi, D. H.; Watanabe, K.; Taniguchi, T.; Vishwanath, A.; Kim, P. Electric field-tunable superconductivity in alternating-twist magic-angle trilayer graphene. Science 2021, 371, 1133–1138

    2021

  24. [61]

    M.; Cao, Y.; Watanabe, K.; Taniguchi, T.; Jarillo-Herrero, P

    Park, J. M.; Cao, Y.; Watanabe, K.; Taniguchi, T.; Jarillo-Herrero, P. Tunable strongly coupled superconductivity in magic-angle twisted trilayer graphene. Nature 2021, 590, 249–255

    2021

  25. [62]

    J.; Tarnopolsky, G.; Vishwanath, A

    Khalaf, E.; Kruchkov, A. J.; Tarnopolsky, G.; Vishwanath, A. Magic angle hierarchy in twisted graphene multilayers. Phys. Rev. B 2019, 100, 085109

    2019

  26. [63]

    Wu, F.; Zhang, R.-X.; Sarma, S. D. Three-dimensional topological twistronics. Phys. Rev. Res. 2020, 2, 022010

    2020

  27. [64]

    Strong mid-infrared photoresponse in small-twist-angle bilayer graphene

    Deng, B.; Ma, C.; Wang, Q.; Yuan, S.; Watanabe, K.; Taniguchi, T.; Zhang, F.; Xia, F. Strong mid-infrared photoresponse in small-twist-angle bilayer graphene. Nat. Photonics 2020, 14, 549–553. 42

    2020

  28. [65]

    E.; Mujid, F.; Rai, A.; Eriksson, F.; Suh, J.; Poddar, P.; Ray, A.; Park, C.; Fransson, E.; Zhong, Y.; Muller, D

    Kim, S. E.; Mujid, F.; Rai, A.; Eriksson, F.; Suh, J.; Poddar, P.; Ray, A.; Park, C.; Fransson, E.; Zhong, Y.; Muller, D. A.; Erhart, P.; Cahill, D. G.; Park, J. Extremely anisotropic van der Waals thermal conductors. Nature 2021, 597, 660–665

    2021

  29. [66]

    S.; Polski, R.; Zhang, Y.; Thomson, A.; Choi, Y.; Kim, H.; Lin, Z.; Wilson, I

    Arora, H. S.; Polski, R.; Zhang, Y.; Thomson, A.; Choi, Y.; Kim, H.; Lin, Z.; Wilson, I. Z.; Xu, X.; Chu, J.-H.; Watanabe, K.; Taniguchi, T.; Alicea, J.; Nadj-Perge, S. Superconductivity in metallic twisted bilayer graphene stabilized by WSe2. Nature 2020, 583, 379–384

    2020

  30. [67]

    M.; Maier, J.; Smet, J

    Kühne, M.; Paolucci, F.; Popovic, J.; Ostrovsky, P. M.; Maier, J.; Smet, J. H. Ultrafast lithium diffusion in bilayer graphene. Nat. Nanotechnol. 2017, 12, 895–900

    2017

  31. [68]

    M.; Suryavanshi, S

    Vaziri, S.; Yalon, E.; Rojo, M. M.; Suryavanshi, S. V.; Zhang, H.; McClellan, C. J.; Bailey, C. S.; Smithe, K. K. H.; Gabourie, A. J.; Chen, V.; Deshmukh, S.; Bendersky, L.; Davydov, A. V.; Pop, E. Ultrahigh thermal isolation across heterogeneously layered two-dimensional mate...

    2019

  32. [69]

    S.; Bechtel, H

    Fang, H.; Battaglia, C.; Carraro, C.; Nemsak, S.; Ozdol, B.; Kang, J. S.; Bechtel, H. A.; Desai, S. B.; Kronast, F.; Unal, A. A.; Conti, G.; Conlon, C.; Palsson, G. K.; Martin, M. C.; Minor, A. M.; Fadley, C. S.; Yablonovitch, E.; Maboudian, R.; Javey, A. Strong interlayer cou...

    2014

  33. [70]

    Y.; Mak, K

    Kang, K.; Xie, S.; Huang, L.; Han, Y.; Huang, P. Y.; Mak, K. F.; Kim, C.-J.; Muller, D.; Park, J.; High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Nature 2015, 520, 656–660

    2015

  34. [71]

    Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum

    Gao, L.; Ren, W.; Xu, H.; Jin, L.; Wang, Z.; Ma, T.; Ma, L.-P.; Zhang, Z.; Fu, Q.; Peng, L.-M.; Bao, X.; Cheng, H.-M. Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum. Nat. Commun. 2012, 3, 699

    2012

  35. [72]

    F.; Sfeir, M

    Mak, K. F.; Sfeir, M. Y.; Wu, Y.; Lui, C. H.; Misewich, J. A.; Heinz, T. F. Measurement of the optical conductivity of graphene. Phys. Rev. Lett. 2008, 101, 196405

    2008

  36. [73]

    W.; Kim, C.-J.; Brown, L.; Kevek, J

    Havener, R. W.; Kim, C.-J.; Brown, L.; Kevek, J. W.; Sleppy, J. D.; McEuen, P. L.; Park, J. Hyperspectral imaging of structure and composition in atomically thin heterostructures. Nano Lett. 2013, 13, 3942–3946

    2013

  37. [74]

    S.; Geim, A

    Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric field effect in atomically thin carbon films. Science 2004, 306, 666–669

    2004

  38. [75]

    R.; Young, A

    Dean, C. R.; Young, A. F.; Meric, I.; Lee, C.; Wang, L.; Sorgenfrei, S.; Watanabe, K.; Taniguchi, T.; Kim, P.; Shepard, K. L.; Hone, J. Boron nitride substrates for high-quality graphene electronics. Nat. Nanotechnol. 2010, 5, 722–726. 44

    2010

  39. [76]

    Autonomous robotic searching and assembly of two-dimensional crystals to build van der Waals superlattices

    Masubuchi, S.; Morimoto, M.; Morikawa, S.; Onodera, M.; Asakawa, Y.; Watanabe, K.; Taniguchi, T.; Machida, T. Autonomous robotic searching and assembly of two-dimensional crystals to build van der Waals superlattices. Nat. Commun. 2018, 9, 1413

    2018

  40. [77]

    Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire

    Li, T.; Guo, W.; Ma, L.; Li, W.; Yu, Z.; Han, Z.; Gao, S.; Liu, L.; Fan, D.; Wang, Z.; Yang, Y.; Lin, W.; Luo, Z.; Chen, X.; Dai, N.; Tu, X.; Pan, D.; Yao, Y.; Wang, P.; Nie, Y.; Wang, J.; Shi, Y.; Wang, X. Epitaxial growth of wafer-scale molybdenum disulfide semiconductor sin...

    2021

  41. [78]

    Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire

    Wang, J.; Xu, X.; Cheng, T.; Gu, L.; Qiao, R.; Liang, Z.; Ding, D.; Hong, H.; Zheng, P.; Zhang, Z.; Zhang, Z.; Zhang, S.; Cui, G.; Chang, C.; Huang, C.; Qi, J.; Liang, J.; Liu, C.; Zuo, Y.; Xue, G.; Fang, X.; Tian, J.; Wu, M.; Guo, Y.; Yao, Z.; Jiao, Q.; Liu, L.; Gao, P.; Li, ...

    2022

  42. [79]

    Single-crystal MoS2 monolayer wafer grown on Au (111) film substrates

    Li, J.; Wang, S.; Jiang, Q.; Qian, H.; Hu, S.; Kang, H.; Chen, C.; Zhan, X.; Yu, A.; Zhao, S.; Zhang, Y.; Chen, Z.; Sui, Y.; Qiao, S.; Yu, G.; Peng, S.; Jin, Z.; Liu, X. Single-crystal MoS2 monolayer wafer grown on Au (111) film substrates. Small 2021, 17, 2100743

    2021

  43. [80]

    K.; Colombo, L.; Ruoff, R

    Li, X.; Cai, W.; An, J.; Kim, S.; Nah, J.; Yang, D.; Piner, R.; Velamakanni, A.; Jung, I.; Tutuc, E.; Banerjee, S. K.; Colombo, L.; Ruoff, R. S. Large-area synthesis of high-quality and uniform graphene films on copper foils. Science 2009, 324, 1312–1314. 45

    2009

  44. [81]

    B.; Bedell, S

    Kim, J.; Park, H.; Hannon, J. B.; Bedell, S. W.; Fogel, K.; Sadana, D. K.; Dimitrakopoulos, C. Layer-resolved graphene transfer via engineered strain layers. Science 2013, 342, 833–836

    2013

  45. [82]

    J.; Ding, F.; Liu, K

    Wang, L.; Xu, X.; Zhang, L.; Qiao, R.; Wu, M.; Wang, Z.; Zhang, S.; Liang, J.; Zhang, Z.; Zhang, Z.; Chen, W.; Xie, X.; Zong, J.; Shan, Y.; Guo, Y.; Willinger, M.; Wu, H.; Li, Q.; Wang, W.; Gao, P.; Wu, S.; Zhang, Y.; Jiang, Y.; Yu, D.; Wang, E.; Bai, X.; Wang, Z. J.; Ding, F....

    2019

  46. [83]

    Chen, T.-A.; Chuu, C.-P.; Tseng, C.-C.; Wen, C.-K.; Wong, H. S. P.; Pan, S.; Li, R.; Chao, T.-A.; Chueh, W.-C.; Zhang, Y.; Fu, Q.; Yakobson, B. I.; Chang, W.-H.; Li, L.-J. Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu(111). Nature 2020, 579, 219–223

    2020

  47. [84]

    Atomic corrugation and electron localization due to moiré patterns in twisted bilayer graphenes

    Uchida, K.; Furuya, S.; Iwata, J.-I.; Oshiyama, A. Atomic corrugation and electron localization due to moiré patterns in twisted bilayer graphenes. Phys. Rev. B 2014, 90, 155451

    2014

  48. [85]

    Biscoe, J.; Warren, B. E. An X-ray study of carbon black. J. Appl. Phys. 1942, 13, 364–371

    1942

  49. [86]

    T.; Feibelman, P

    Ohta, T.; Robinson, J. T.; Feibelman, P. J.; Bostwick, A.; Rotenberg, E.; Beechem, T. E. Evidence for interlayer coupling and moiré periodic potentials in twisted bilayer graphene. Phys. Rev. Lett. 2012, 109, 186807

    2012

  50. [87]

    Barron, L. D. Molecular light scattering and optical activity. (Cambridge Univ. Press, Cambridge, 2009). 46

    2009

  51. [88]

    Optical absorption in twisted bilayer graphene

    Moon, P.; Koshino, M. Optical absorption in twisted bilayer graphene. Phys. Rev. B 2013, 87, 205404

    2013

  52. [89]

    Simmons, J. G. Generalized formula for the electric tunnel effect between similar electrodes separated by a thin insulating film. J. Appl. Phys. 1963, 34, 1793

    1963

  53. [90]

    Y.; Kim, H.; Watanabe, K.; Taniguchi, T.; Ha, D

    Jung, S.; Myoung, N.; Park, J.; Jeong, T. Y.; Kim, H.; Watanabe, K.; Taniguchi, T.; Ha, D. H.; Hwang, C.; Park, H. C. Direct probing of the electronic structures of single-layer and bilayer graphene with a hexagonal boron nitride tunneling barrier. Nano Lett. 2017, 17, 206–213

    2017

  54. [91]

    K.; Yuan, Q.; Di, Z.; Wang, X.; Ding, F.; Yakobson, B

    Dai, J.; Wang, D.; Zhang, M.; Niu, T.; Li, A.; Ye, M.; Qiao, S.; Ding, G.; Xie, X.; Wang, Y.; Chu, P. K.; Yuan, Q.; Di, Z.; Wang, X.; Ding, F.; Yakobson, B. I. How graphene islands are unidirectionally aligned on the Ge(110) surface. Nano Lett. 2016, 16, 3160–3165

    2016

  55. [92]

    F.; Shan, J.; Heinz, T

    Mak, K. F.; Shan, J.; Heinz, T. F. Seeing many-body effects in single- and few-layer graphene: observation of two-dimensional saddle-point excitons. Phys. Rev. Lett. 2011, 106, 046401

    2011

  56. [93]

    Xue, J.; Sanchez-Yamagishi, J.; Bulmash, D.; Jacquod, P.; Deshpande, A.; Watanabe, K.; Taniguchi, T.; Jarillo-Herrero, P.; LeRoy, B. J. Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride. Nat. Mater. 2011, 10, 282–285

    2011

  57. [94]

    ! #$ %!! !°° ° + !° ! !

    Hill, H. M.; Rigosi, A. F.; Roquelet, C.; Chernikov, A.; Berkelbach, T. C.; Reichman, D. R.; Hybertsen, M. S.; Brus, L. E.; Heinz, T. F. Observation of excitonic Rydberg states in 47 monolayer MoS2 and WS2 by photoluminescence excitation spectroscopy. Nano Lett. 2015, 15, 2992...

    2015

Pith tools

Reviewed August 6, 2026 · model on record in the stance chip above.