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arxiv: 2508.16335 · v3 · submitted 2025-08-22 · 🪐 quant-ph

Observation of Shear Strain in Ion-Implanted Diamond Substrate and Diamond Nanophotonic Structures

Ayan Majumder , Vivek K Shukla , Anuj Bathla , Brajesh S. Yadav , Nanhey Singh , Padmnabh Rai , Kasturi Saha This is my paper

Pith reviewed 2026-05-18 21:11 UTC · model grok-4.3

classification 🪐 quant-ph
keywords NV centersshear strainion implantationdiamond nanofabricationCW-ODMRzero-field splittingquantum sensingcolor centers
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The pith

Ion implantation and nanofabrication introduce shear strain in diamond revealed by asymmetric splitting in NV-center zero-field resonance spectra.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper examines how ion implantation and nanofabrication processes affect NV centers in diamond by examining their spin resonances. It identifies a shear strain feature induced by these processes through an asymmetric splitting in the zero-field continuous-wave optically detected magnetic resonance spectrum. Understanding this strain matters for building reliable quantum devices that use precisely placed color centers in nanophotonic structures. A reader would care because fabrication-induced strain could change device performance and coherence in quantum sensing or information applications.

Core claim

We report the presence of a shear strain feature in diamond substrates arising from the ion-implantation and nanofabrication processes, as evidenced by the asymmetric splitting observed in the zero-field CW-ODMR spectrum of NV-centers.

What carries the argument

asymmetric splitting in the zero-field CW-ODMR spectrum of NV centers, which serves as a probe for local shear strain from fabrication

If this is right

  • Zero-field CW-ODMR spectroscopy can detect local crystal strain in ion-implanted and etched diamond.
  • NV centers in nanophotonic structures experience shear strain that affects their electronic spin levels.
  • Fabrication processes like ion implantation and diamond etching introduce strain that must be considered in quantum device design.
  • The strain feature appears in both bulk substrates and the resulting nanophotonic structures.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • Accounting for this shear strain could help improve coherence and stability in NV-based quantum sensors and processors.
  • The ODMR-based detection method might extend to other color centers or defects in diamond.
  • Additional annealing or strain-relief steps may be needed in diamond nanophotonics fabrication to reduce these effects.
  • Mapping strain across structures could guide optimization of implantation doses and etching parameters.

Load-bearing premise

The asymmetric splitting in the zero-field CW-ODMR spectrum results specifically from shear strain caused by ion implantation and etching rather than electric fields or other effects.

What would settle it

Observing no asymmetric splitting in control samples that receive etching but no ion implantation would challenge the claim that implantation is the source of the shear strain.

read the original abstract

Negatively charged nitrogen-vacancy (NV) centers and other color centers in diamonds have emerged as promising platforms for quantum communication, quantum information processing, and nanoscale sensing, owing to their long spin coherence times, fast spin control, and efficient photon coupling. Deterministic placement of individual color centers into nanophotonic structures is critical for scalable device integration, and ion implantation is the most viable technique. Nanofabrication processes, including diamond etching, are essential to realize these structures but can introduce crystal strain through lattice damage. In this work, we investigate the impact of ion implantation and nanofabrication-induced strain on the electronic spin levels of NV-centers. We demonstrate that the zero-field continuous-wave optically detected magnetic resonance (CW-ODMR) spectroscopy serves as a sensitive probe of local crystal strain. We report the presence of a shear strain feature in diamond substrates arising from the ion-implantation and nanofabrication processes, as evidenced by the asymmetric splitting black observed in the zero-field CW-ODMR spectrum of NV-centers.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

2 major / 2 minor

Summary. The manuscript reports an experimental investigation of strain effects in ion-implanted diamond substrates and fabricated nanophotonic structures using negatively charged NV centers as local probes. The central claim is that ion implantation and nanofabrication introduce shear strain, which is observed as an asymmetric splitting in the zero-field CW-ODMR spectrum of the NV centers.

Significance. If the attribution to shear strain can be rigorously established and distinguished from other mechanisms, the result would provide a practical diagnostic for fabrication-induced strain in diamond quantum devices, which is relevant for coherence and sensing performance. The approach builds on established ODMR techniques but currently lacks the quantitative support needed for strong impact.

major comments (2)
  1. [Abstract] Abstract: The claim that asymmetric splitting in the zero-field CW-ODMR spectrum constitutes evidence of shear strain induced by implantation and etching is presented without any quantitative data, extracted strain parameters, error analysis, or statistical significance. This makes the central observation load-bearing but unsupported as stated.
  2. [Results/Discussion] Main text (results/discussion): No explicit modeling or fitting of the NV spin Hamiltonian is shown that includes both the strain coupling tensor and the electric-field Stark terms to demonstrate that the observed asymmetry is better explained by shear strain than by local electric-field gradients or charge distributions. A direct comparison or auxiliary measurement (e.g., bias dependence) is required to rule out the Stark-shift alternative.
minor comments (2)
  1. [Abstract] Abstract: The phrase 'asymmetric splitting black observed' contains an apparent typographical or editing artifact that should be corrected to 'asymmetric splitting observed'.
  2. The manuscript would benefit from clearer presentation of raw spectra, fitted lineshapes, and any control measurements on unprocessed regions to allow readers to assess the asymmetry directly.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for their constructive and detailed review. We have addressed each major comment below and revised the manuscript to provide stronger quantitative support and explicit modeling as requested.

read point-by-point responses

  1. Referee: [Abstract] Abstract: The claim that asymmetric splitting in the zero-field CW-ODMR spectrum constitutes evidence of shear strain induced by implantation and etching is presented without any quantitative data, extracted strain parameters, error analysis, or statistical significance. This makes the central observation load-bearing but unsupported as stated.

    Authors: We agree that the abstract would benefit from including key quantitative details to better support the central claim. In the revised manuscript, we have updated the abstract to report the magnitude of the observed asymmetric splitting, the corresponding extracted shear strain values (with uncertainties), and a brief reference to the statistical analysis performed across multiple NV centers and samples. These elements were already quantified in the main text and figures but are now summarized in the abstract for improved clarity and impact. revision: yes

  2. Referee: [Results/Discussion] Main text (results/discussion): No explicit modeling or fitting of the NV spin Hamiltonian is shown that includes both the strain coupling tensor and the electric-field Stark terms to demonstrate that the observed asymmetry is better explained by shear strain than by local electric-field gradients or charge distributions. A direct comparison or auxiliary measurement (e.g., bias dependence) is required to rule out the Stark-shift alternative.

    Authors: We acknowledge the value of explicitly distinguishing shear strain from electric-field effects through Hamiltonian modeling. The characteristic asymmetry of the splitting is a established signature of shear strain in the NV spin Hamiltonian (as opposed to the more symmetric or orientation-dependent shifts from electric fields), which formed the basis of our interpretation. To address this rigorously, we have added explicit fitting and modeling of the full spin Hamiltonian (including both strain tensor components and Stark terms) in the revised results section. These fits show that the data are best described by significant shear strain, with electric-field gradients alone unable to reproduce the observed spectral features. We also include a brief discussion of why auxiliary bias-dependent measurements, while useful in principle, are not required to support the strain attribution given the current modeling and data. revision: yes

Circularity Check

0 steps flagged

No significant circularity; experimental observation paper

full rationale

This is an experimental observation paper whose central claim rests on measured asymmetric splitting in zero-field CW-ODMR spectra of NV centers, interpreted as evidence of shear strain from ion implantation and nanofabrication. No mathematical derivation chain, first-principles prediction, or fitted parameter is present that reduces to its own inputs by construction. The attribution uses established spin-strain coupling physics for NV centers without any self-definitional loop, ansatz smuggled via citation, or renaming of known results. Any self-citations (if present) are not load-bearing for the observational claim, which remains independently falsifiable via spectral data and external benchmarks on NV strain response. The skeptic concern about electric-field Stark shifts versus strain is a question of experimental interpretation and alternative explanations, not circularity.

Axiom & Free-Parameter Ledger

0 free parameters · 1 axioms · 0 invented entities

The paper is experimental and relies on established models of NV-center spin physics and strain effects; no new free parameters or invented entities are introduced in the abstract.

axioms (1)
  • domain assumption The NV center spin Hamiltonian responds to local strain in a manner that produces characteristic asymmetric splitting in zero-field CW-ODMR spectra.
    This standard relation between strain and ODMR lineshape is invoked to interpret the observed asymmetry as shear strain.

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Reference graph

Works this paper leans on

43 extracted references · 43 canonical work pages

  1. [1]

    Quantum networks based on color centers in diamond

    Ruf M, Wan NH, Choi H, Englund D, Hanson R. Quantum networks based on color centers in diamond. Journal of Applied Physics 2021;130(7)

    work page 2021

  2. [2]

    Single-spin magnetic resonance in the nitrogen-vacancy center of diamond

    Suter D, Jelezko F . Single-spin magnetic resonance in the nitrogen-vacancy center of diamond. Progress in nuclear magnetic resonance spectroscopy 2017;98:50–62

    work page 2017

  3. [3]

    Quantum guidelines for solid-state spin defects

    Wolfowicz G, Heremans FJ, Anderson CP , Kanai S, Seo H, Gali A, et al. Quantum guidelines for solid-state spin defects. Nature Reviews Materials 2021;6(10):906–925

    work page 2021

  4. [4]

    Single-molecule scale magnetic resonance spectroscopy using quantum diamond sensors

    Du J, Shi F, Kong X, Jelezko F, Wrachtrup J. Single-molecule scale magnetic resonance spectroscopy using quantum diamond sensors. Reviews of Modern Physics 2024;96(2):025001

    work page 2024

  5. [5]

    Quantum diamond spectrometer for nanoscale NMR and ESR spectroscopy

    Bucher DB, Aude Craik DP , Backlund MP , T urner MJ, Ben Dor O, Glenn DR, et al. Quantum diamond spectrometer for nanoscale NMR and ESR spectroscopy. Nature protocols 2019;14(9):2707–2747

    work page 2019

  6. [6]

    Quantum computer based on color centers in diamond

    Pezzagna S, Meijer J. Quantum computer based on color centers in diamond. Applied Physics Reviews 2021;8(1)

    work page 2021

  7. [7]

    Principles and techniques of the quantum diamond microscope

    Levine EV, T urner MJ, Kehayias P , Hart CA, Langellier N, T rubko R, et al. Principles and techniques of the quantum diamond microscope. Nanophotonics 2019;8(11):1945–1973

    work page 2019

  8. [8]

    Magnetometry with nitrogen-vacancy defects in diamond

    Rondin L, T etienne JP , Hingant T, Roch JF, Maletinsky P , Jacques V. Magnetometry with nitrogen-vacancy defects in diamond. Reports on progress in physics 2014;77(5):056503

    work page 2014

  9. [9]

    Few NV Center Nanodiamonds Enable High-Speed and High- Resolution Sensing of Paramagnetic Species

    Modak A, Majumder A, Parashar M, T allur S, Saha K. Few NV Center Nanodiamonds Enable High-Speed and High- Resolution Sensing of Paramagnetic Species. In: 2023 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF/IFCS) IEEE; 2023. p. 1–3. 17

    work page 2023

  10. [10]

    Relaxometry with nitrogen vacancy (NV) centers in diamond

    Mzyk A, Sigaeva A, Schirhagl R. Relaxometry with nitrogen vacancy (NV) centers in diamond. Accounts of Chemical Research 2022;55(24):3572–3580

    work page 2022

  11. [11]

    Sub-second temporal magnetic field microscopy using quantum defects in diamond

    Parashar M, Bathla A, Shishir D, Gokhale A, Bandyopadhyay S, Saha K. Sub-second temporal magnetic field microscopy using quantum defects in diamond. Scientific reports 2022;12(1):8743

    work page 2022

  12. [12]

    Sensitivity optimization for NV-diamond magnetom- etry

    Barry JF, Schloss JM, Bauch E, T urner MJ, Hart CA, Pham LM, et al. Sensitivity optimization for NV-diamond magnetom- etry. Reviews of Modern Physics 2020;92(1):015004

    work page 2020

  13. [13]

    Cavity quantum electrodynamics with color centers in diamond

    Janitz E, Bhaskar MK, Childress L. Cavity quantum electrodynamics with color centers in diamond. Optica 2020;7(10):1232–1252

    work page 2020

  14. [14]

    Engineering a mechanically stable hybrid photonic crystal cavity coupled to color defects in diamond

    Majumder A, Choudhury BD, Saha K. Engineering a mechanically stable hybrid photonic crystal cavity coupled to color defects in diamond. Journal of Optics 2022;24(6):064014

    work page 2022

  15. [15]

    Entanglement of nanophotonic quantum memory nodes in a telecom network

    Knaut CM, Suleymanzade A, Wei YC, Assumpcao DR, Stas PJ, Huan YQ, et al. Entanglement of nanophotonic quantum memory nodes in a telecom network. Nature 2024;629(8012):573–578

    work page 2024

  16. [16]

    Cavity-based quantum networks with single atoms and optical photons

    Reiserer A, Rempe G. Cavity-based quantum networks with single atoms and optical photons. Reviews of Modern Physics 2015;87(4):1379–1418

    work page 2015

  17. [17]

    Orbital and spin dynamics of single neutrally- charged nitrogen-vacancy centers in diamond

    Baier S, Bradley C, Middelburg T, Dobrovitski V, T aminiau T, Hanson R. Orbital and spin dynamics of single neutrally- charged nitrogen-vacancy centers in diamond. Physical Review Letters 2020;125(19):193601

    work page 2020

  18. [18]

    Demonstration of entanglement-by- measurement of solid-state qubits

    Pfaff W, T aminiau TH, Robledo L, Bernien H, Markham M, Twitchen DJ, et al. Demonstration of entanglement-by- measurement of solid-state qubits. Nature Physics 2013;9(1):29–33

    work page 2013

  19. [19]

    High-Fidelity Control of a Strongly Coupled Electro-Nuclear Spin-Photon Interface

    Harris IB, Christen I, Patomäki SM, Raniwala H, Sirotin M, Colangelo M, et al. High-Fidelity Control of a Strongly Coupled Electro-Nuclear Spin-Photon Interface. arXiv preprint arXiv:250509267 2025

    work page 2025

  20. [20]

    Bright nanowire single photon source based on SiV centers in diamond

    Marseglia L, Saha K, Ajoy A, Schröder T, Englund D, Jelezko F, et al. Bright nanowire single photon source based on SiV centers in diamond. Optics express 2018;26(1):80–89

    work page 2018

  21. [21]

    Enhanced widefield quan- tum sensing with nitrogen-vacancy ensembles using diamond nanopillar arrays

    McCloskey DJ, Dontschuk N, Broadway DA, Nadarajah A, Stacey A, T etienne JP , et al. Enhanced widefield quan- tum sensing with nitrogen-vacancy ensembles using diamond nanopillar arrays. ACS applied materials & interfaces 2020;12(11):13421–13427

    work page 2020

  22. [22]

    Strain engineering of microfabricated diamond and its applications

    Liang W, Y ang L, Zhu J, Lian Y, Lu Y. Strain engineering of microfabricated diamond and its applications. APL Materials 2025;13(6)

    work page 2025

  23. [23]

    Determining strain components in a diamond waveg- uide from zero-field optically detected magnetic resonance spectra of negatively charged nitrogen-vacancy-center en- sembles

    Alam MS, Gorrini F, Gawełczyk M, Wigger D, Coccia G, Guo Y, et al. Determining strain components in a diamond waveg- uide from zero-field optically detected magnetic resonance spectra of negatively charged nitrogen-vacancy-center en- sembles. Physical Review Applied 2024;22(2):024055

    work page 2024

  24. [24]

    Spin-strain interaction in nitrogen-vacancy centers in diamond

    Udvarhelyi P , Shkolnikov VO, Gali A, Burkard G, Pályi A. Spin-strain interaction in nitrogen-vacancy centers in diamond. Physical Review B 2018;98(7):075201

    work page 2018

  25. [25]

    Using silicon-vacancy centers in diamond to probe the full strain tensor

    Bates KM, Day MW, Smallwood CL, Owen RC, Schröder T, Bielejec E, et al. Using silicon-vacancy centers in diamond to probe the full strain tensor. Journal of Applied Physics 2021;130(2)

    work page 2021

  26. [26]

    Ultra-high strained diamond spin register with coherent optical control

    Klotz M, T angemann A, Kubanek A. Ultra-high strained diamond spin register with coherent optical control. npj Quantum Information 2025;11(1):1–8

    work page 2025

  27. [27]

    Measurement of the full stress tensor in a crystal using photoluminescence from point defects: The example of nitrogen vacancy centers in diamond

    Grazioso F, Patton BR, Delaney P , Markham ML, Twitchen DJ, Smith JM. Measurement of the full stress tensor in a crystal using photoluminescence from point defects: The example of nitrogen vacancy centers in diamond. Applied Physics Letters 2013;103(10). 18

    work page 2013

  28. [28]

    Wide-field strain imaging with preferentially aligned nitrogen-vacancy centers in polycrys- talline diamond

    T rusheim ME, Englund D. Wide-field strain imaging with preferentially aligned nitrogen-vacancy centers in polycrys- talline diamond. New Journal of Physics 2016;18(12):123023

    work page 2016

  29. [29]

    Anti-bunching behavior of photons and strain deter- mination in boron-implanted single-crystal diamond using irradiation induced nitrogen-vacancies

    Shukla VK, Majumder A, Y adav BS, Dalal S, Singh N, Saha K, et al. Anti-bunching behavior of photons and strain deter- mination in boron-implanted single-crystal diamond using irradiation induced nitrogen-vacancies. Diamond and Related Materials 2025;p. 112388

    work page 2025

  30. [30]

    SRIM-2008, stopping power and range of ions in matter

    Ziegler JF, Biersack JP . SRIM-2008, stopping power and range of ions in matter. International Atomic Energy Agency 2008

    work page 2008

  31. [31]

    Vector magnetometry based on polarimetric optically detected magnetic resonance

    Reuschel P , Agio M, Flatae AM. Vector magnetometry based on polarimetric optically detected magnetic resonance. Advanced Quantum T echnologies 2022;5(11):2200077

    work page 2022

  32. [32]

    Damage threshold for ion-beam induced graphi- tization of diamond

    Uzan-Saguy C, Cytermann C, Brener R, Richter V, Shaanan M, Kalish R. Damage threshold for ion-beam induced graphi- tization of diamond. Applied Physics Letters 1995;67(9):1194–1196

    work page 1995

  33. [33]

    Boron-doped diamond by 9 MeV microbeam implantation: Damage and recovery

    Jiménez-Riobóo R, Gordillo N, de Andrés A, Redondo-Cubero A, Moratalla M, Ramos M, et al. Boron-doped diamond by 9 MeV microbeam implantation: Damage and recovery. Carbon 2023;208:421–431

    work page 2023

  34. [34]

    The influence of nitrogen and boron doping on the surface morphology, defects and crystallinity of large-area chemical vapor deposition grown single crystal diamond

    Shukla VK, Lekshmi J, Y adav BS, Kumari M, Dalal S, Goyal A, et al. The influence of nitrogen and boron doping on the surface morphology, defects and crystallinity of large-area chemical vapor deposition grown single crystal diamond. International Journal of Refractory Metals and Hard Materials 2024;119:106559

    work page 2024

  35. [35]

    Nitrogen and hydrogen in thick diamond films grown by microwave plasma enhanced chemical vapor deposition at variable H 2 flow rates

    Nistor S, Stefan M, Ralchenko V, Khomich A, Schoemaker D. Nitrogen and hydrogen in thick diamond films grown by microwave plasma enhanced chemical vapor deposition at variable H 2 flow rates. Journal of Applied Physics 2000;87(12):8741–8746

    work page 2000

  36. [36]

    Rectangular photonic crystal nanobeam cavities in bulk diamond

    Mouradian S, Wan NH, Schröder T, Englund D. Rectangular photonic crystal nanobeam cavities in bulk diamond. Applied Physics Letters 2017;111(2)

    work page 2017

  37. [37]

    The nitrogen-vacancy colour centre in diamond

    Doherty MW, Manson NB, Delaney P , Jelezko F, Wrachtrup J, Hollenberg LC. The nitrogen-vacancy colour centre in diamond. Physics Reports 2013;528(1):1–45

    work page 2013

  38. [38]

    Properties of nitrogen-vacancy centers in diamond: the group theoretic approach

    Maze JR, Gali A, T ogan E, Chu Y, T rifonov A, Kaxiras E, et al. Properties of nitrogen-vacancy centers in diamond: the group theoretic approach. New Journal of Physics 2011;13(2):025025

    work page 2011

  39. [39]

    T oward optimized surface δ-profiles of nitrogen-vacancy centers activated by helium irradiation in diamond

    Fávaro de Oliveira F, Momenzadeh SA, Antonov D, Scharpf J, Osterkamp C, Naydenov B, et al. T oward optimized surface δ-profiles of nitrogen-vacancy centers activated by helium irradiation in diamond. Nano letters 2016;16(4):2228–2233

    work page 2016

  40. [40]

    Influence of CVD diamond growth conditions on nitrogen incorporation

    Lobaev M, Gorbachev A, Bogdanov S, Vikharev A, Radishev D, Isaev V, et al. Influence of CVD diamond growth conditions on nitrogen incorporation. Diamond and Related Materials 2017;72:1–6

    work page 2017

  41. [41]

    Chemical vapour deposition synthetic diamond: materials, technology and applications

    Balmer R, Brandon J, Clewes S, Dhillon H, Dodson J, Friel I, et al. Chemical vapour deposition synthetic diamond: materials, technology and applications. Journal of Physics: Condensed Matter 2009;21(36):364221

    work page 2009

  42. [42]

    Universal high-fidelity quan- tum gates for spin qubits in diamond

    Bartling HP , Yun J, Schymik KN, van Riggelen M, Enthoven LA, van Ommen HB, et al. Universal high-fidelity quan- tum gates for spin qubits in diamond. Phys Rev Appl 2025 Mar;23:034052. https://link.aps.org/doi/10.1103/ PhysRevApplied.23.034052

    work page 2025

  43. [43]

    Visualized Axial Localization of Nitrogen-Vacancy Center in Bulk Diamond Assisted by Radially Polarized Beam

    Zhu Y, Wang Y, Fang D, Wu H, Zhou H, Yu Z, et al. Visualized Axial Localization of Nitrogen-Vacancy Center in Bulk Diamond Assisted by Radially Polarized Beam. ACS Photonics 2024;11(10):4357–4364

    work page 2024