Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials | Paper Citation Record

Observation 6b910cac-6cbc-40d8-922e-cabe8eeaf6db · outbound

This paper cites Das,et al., Transistors based on two-dimensional materials for future integrated circuits.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Das,et al., Transistors based on two-dimensional materials for future integrated circuits

Reference 1

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.639513Z

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No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation ff3b049d-662c-45ce-9008-ec27ef716a65 · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 2

Resolution: unresolved; raw_fallback, observed 2026-05-18T15:02:41.581670Z

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No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 12f52489-3500-43d4-b7a4-4a91b60e0464 · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 3

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.625461Z

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No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 69b8738e-578f-4caf-98af-9523855fc6fe · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 4

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.642774Z

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No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation cc2063a9-f666-4c5b-b35d-f6f0481f80f5 · outbound

This paper cites Li,et al., High-throughput screening and machine learning classification of van der Waals dielectrics for 2D nanoelectronics.Nat.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Li,et al., High-throughput screening and machine learning classification of van der Waals dielectrics for 2D nanoelectronics.Nat

Reference 5

Resolution: malformed identifier; raw_fallback, observed 2026-05-18T15:02:41.584271Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation c73a443d-c2b9-4208-8b21-69edc178436d · outbound

This paper cites Stengel, N.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Stengel, N

Reference 6

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.646830Z

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No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 43dc95df-31c3-4787-a3b5-414f19f9e9e1 · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 7

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.629758Z

Source-reported events for the cited work

correction dated 2002-07-26. Source: crossref record 10.1063/1.1427643->10.1063/1.1405826:correction, observed 2026-07-11T03:01:53.582492+00:00. This notice travels one citation hop only.

Observation 596f775b-7fa9-4e8f-a9a9-87a453c28195 · outbound

This paper cites Novoselov, A.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Novoselov, A

Reference 8

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.634367Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation ede62adb-0646-46eb-86f8-fac1c93e1e96 · outbound

This paper cites Electron Devices50(4), 1027– 1035 (2003), doi:10.1109/ted.2003.812504.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Electron Devices50(4), 1027– 1035 (2003), doi:10.1109/ted.2003.812504

Reference 9

Resolution: verified exact; arxiv_id, observed 2026-05-18T14:56:29.619165Z

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No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 0a30c549-1ee5-48b0-bf23-5b2c11e55749 · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 10

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.650609Z

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No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation f7dc7217-9b74-472a-af00-6e83c3ac2e93 · outbound

This paper cites Moazzami Gudarzi, S.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Moazzami Gudarzi, S

Reference 11

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.654091Z

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No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation b94575bc-f00a-48c2-9805-0f69fafb96e1 · outbound

This paper cites 3(8), 473–478 (2020), doi:10.1038/s41928-020-0444-6.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials 3(8), 473–478 (2020), doi:10.1038/s41928-020-0444-6

Reference 12

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.657588Z

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No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 26ebc114-d137-4e45-9f8a-fefb4cbbaba5 · outbound

This paper cites ACS Nano19(17), 16903–16912 (2025), doi:10.1021/acsnano.5c02341.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials ACS Nano19(17), 16903–16912 (2025), doi:10.1021/acsnano.5c02341

Reference 13

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.808500Z

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No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 15c6df7d-fa97-44be-ac72-6138c44d5dba · outbound

This paper cites Chen,et al., Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures.Nat.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Chen,et al., Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures.Nat

Reference 14

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.771143Z

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No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation a1511bb5-93c6-43ae-82e7-371429973aab · outbound

This paper cites Giovannetti,et al., Doping graphene with metal contacts.Phys.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Giovannetti,et al., Doping graphene with metal contacts.Phys

Reference 15

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.765458Z

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No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 5575c34c-0765-4240-a1f7-e595703ff720 · outbound

This paper cites Electron.8(2), 96–98 (2025), doi:10.1038/s41928-024-01335-5.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Electron.8(2), 96–98 (2025), doi:10.1038/s41928-024-01335-5

Reference 16

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.684437Z

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No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation fc08c75a-011c-4e4b-add8-78e7cb1f0c16 · outbound

This paper cites Electron.4(2), 98–108 (2021), doi: 10.1038/s41928-020-00529-x.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Electron.4(2), 98–108 (2021), doi: 10.1038/s41928-020-00529-x

Reference 17

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.803020Z

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No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation c3a644ad-1ae7-4e11-952b-36c12a02f5d6 · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 18

Resolution: unresolved; raw_fallback, observed 2026-05-18T15:02:41.586426Z

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No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation a425f1e9-883a-4edf-ad14-ede1fb04e9b6 · outbound

This paper cites Zhang,et al., A single-crystalline native dielectric for two-dimensional semiconductors with an equivalent oxide thickness below 0.5nm.Nat.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Zhang,et al., A single-crystalline native dielectric for two-dimensional semiconductors with an equivalent oxide thickness below 0.5nm.Nat

Reference 19

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.773762Z

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No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation d4b2320c-d583-41e4-9fc5-ecf6ae0e1069 · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 20

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.759049Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation b30b87f8-04db-4d14-a15a-c83edccac6ae · outbound

This paper cites Luo,et al., Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation.Nat.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Luo,et al., Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation.Nat

Reference 21

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.672895Z

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No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 8057ebf0-2a9d-4d37-b23e-bd2df45a9792 · outbound

This paper cites Fu,et al., Low-temperature controlled growth of 2D LaOCl with enhanced dielectric prop- erties for advanced electronics.Adv.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Fu,et al., Low-temperature controlled growth of 2D LaOCl with enhanced dielectric prop- erties for advanced electronics.Adv

Reference 22

Resolution: malformed identifier; doi_truncated, observed 2026-05-18T14:56:29.669546Z

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No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation cc927b14-dd80-4622-bdff-3b0083b8b8ba · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 23

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.698526Z

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No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 3dd03934-324c-48a1-bef3-474423c3b552 · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 24

Resolution: malformed identifier; doi_truncated, observed 2026-05-18T14:56:29.722635Z

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No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation d2449e66-ef09-4e50-a448-8d6df6824661 · outbound

This paper cites (38) Chatzigoulas, A.; Karathanou, K.; Dellis, D.; Cournia, Z.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials (38) Chatzigoulas, A.; Karathanou, K.; Dellis, D.; Cournia, Z

Reference 25

Resolution: metadata mismatch; doi, observed 2026-05-18T14:56:29.805999Z

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No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation d8caeca9-0f6c-47b4-9d0e-b353f9bb1132 · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 26

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.822173Z

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No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 6e9e1688-326b-49b2-a33b-97ee0a9237f7 · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 27

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.710218Z

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No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 74df5ca2-d47a-4e50-a68e-0c7fe95b5a10 · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 28

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.707371Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation ba655383-990f-470d-a0f7-fe4ab3d3adc8 · outbound

This paper cites Britnell,et al., Electron tunneling through ultrathin boron nitride crystalline barriers.Nano Lett.12(3), 1707–1710 (2012), doi:10.1021/nl3002205.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Britnell,et al., Electron tunneling through ultrathin boron nitride crystalline barriers.Nano Lett.12(3), 1707–1710 (2012), doi:10.1021/nl3002205

Reference 29

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.694838Z

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No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 944ea922-cfd6-4504-b720-8fd1843cbca5 · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 30

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.701786Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 7f731ba4-b906-4d22-9ca1-1812587980b1 · outbound

This paper cites Qi,et al., Graphene-enhanced metal transfer printing for strong van der Waals contacts between 3D metals and 2D semiconductors.Adv.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Qi,et al., Graphene-enhanced metal transfer printing for strong van der Waals contacts between 3D metals and 2D semiconductors.Adv

Reference 31

Resolution: malformed identifier; raw_fallback, observed 2026-05-18T15:02:41.598288Z

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No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 4c168632-4caa-428a-943a-a46a0fdc4158 · outbound

This paper cites Kumar,et al., Sub-200Ω·𝜇m alloyed contacts to synthetic monolayer MoS2, in2021 IEEE International Electron Devices Meeting (IEDM)(IEEE) (2021), pp.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Kumar,et al., Sub-200Ω·𝜇m alloyed contacts to synthetic monolayer MoS2, in2021 IEEE International Electron Devices Meeting (IEDM)(IEEE) (2021), pp

Reference 32

Resolution: metadata mismatch; arxiv_id, observed 2026-05-18T14:56:29.680332Z

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No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 29a310c0-6dba-474a-b54d-2199581fcade · outbound

This paper cites URL https://doi.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials URL https://doi

Reference 33

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.742712Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 228c8d2b-811f-4447-825e-18aff179f5e4 · outbound

This paper cites Chou,et al., High on-state current in chemical vapor deposited monolayer MoS2 nFETs withSnohmiccontacts.IEEEElectronDeviceLett.42(2),272–275(2021),doi:10.1109/LED.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Chou,et al., High on-state current in chemical vapor deposited monolayer MoS2 nFETs withSnohmiccontacts.IEEEElectronDeviceLett.42(2),272–275(2021),doi:10.1109/LED

Reference 34

Resolution: malformed identifier; doi_truncated, observed 2026-05-18T14:56:29.716481Z

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No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation f486e2c2-ea97-4a98-936b-73abee5c4a55 · outbound

This paper cites Li,et al., Approaching the quantum limit in two-dimensional semiconductor contacts.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Li,et al., Approaching the quantum limit in two-dimensional semiconductor contacts

Reference 35

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.725291Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation d991ca37-7f38-41ec-a9a4-a98f262e84b2 · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 36

Resolution: malformed identifier; raw_fallback, observed 2026-05-18T15:02:41.595910Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation ef14f0b3-3791-40bd-8615-4192966ad9e4 · outbound

This paper cites Kresse \ and\ author J.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Kresse \ and\ author J

Reference 37

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.781830Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation cd3c641f-ade6-40cb-8fea-28f6e1ecb3e1 · outbound

This paper cites and Hafner, J.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials and Hafner, J

Reference 38

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.736698Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation ddc50e6c-b7a6-418a-9f4a-ff757eb71ff9 · outbound

This paper cites Grimme, J.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Grimme, J

Reference 39

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.756235Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 22a1ec23-b644-4e76-896b-fd78cbbfea06 · outbound

This paper cites Cherkaoui,et al., Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation.J.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Cherkaoui,et al., Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation.J

Reference 40

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.794784Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 7605cb22-7f12-4b96-90ee-5dd868a945e9 · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 41

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.791339Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation f779d844-6b4d-43c1-8999-fd364330c0b2 · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 42

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.691148Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 8b2c90ee-9fce-4614-a28c-234811c2aa90 · outbound

This paper cites Li,et al., Ultrathin van der Waals lanthanum oxychloride dielectric for 2D field-effect transistors.Adv.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Li,et al., Ultrathin van der Waals lanthanum oxychloride dielectric for 2D field-effect transistors.Adv

Reference 43

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.816032Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 4c4d144d-19dd-427e-b43a-24c826984202 · outbound

This paper cites Electron.4(12), 906–913 (2021), doi:10.1038/s41928-021-00683-w.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Electron.4(12), 906–913 (2021), doi:10.1038/s41928-021-00683-w

Reference 44

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.727727Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 41477853-f9e0-4863-8832-a2466209a0e9 · outbound

This paper cites Wang,et al., High-temperature relaxations in CaF2 single crystals.Mater.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Wang,et al., High-temperature relaxations in CaF2 single crystals.Mater

Reference 45

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.687876Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 7f7fd545-8949-49df-aa68-5eda6e6491aa · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 46

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.745404Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 5fbb80a1-1b17-4847-867a-d47a0157fb75 · outbound

This paper cites (61) Watanabe, K.; Taniguchi, T.; Kanda, H.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials (61) Watanabe, K.; Taniguchi, T.; Kanda, H

Reference 47

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.778764Z

Source-reported events for the cited work

correction dated 2020-08-18. Source: crossref record 10.1038/s41699-020-00163-3->10.1038/s41699-018-0050-x:correction, observed 2026-07-11T03:07:51.210821+00:00. This notice travels one citation hop only.

Observation 8fc0ae25-6c22-47e5-acc0-bf7715266048 · outbound

This paper cites Normal Modes in Hexagonal Boron Nitride.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Normal Modes in Hexagonal Boron Nitride

Reference 48

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.713058Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation d0404e0e-e8d3-4bda-8e0b-36b2cfb170b5 · outbound

This paper cites Li,et al., Uniform and ultrathin high-𝜅gate dielectrics for two-dimensional electronic devices.Nat.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Li,et al., Uniform and ultrathin high-𝜅gate dielectrics for two-dimensional electronic devices.Nat

Reference 49

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.784631Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation ec37dafc-1ca2-4104-bd5b-94c418aa9347 · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 50

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.730334Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 68e013b6-4628-4a3c-b029-202269af27e4 · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 51

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.828559Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 07647a0b-8769-44de-8d2b-d3a06d392ea8 · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 52

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.768225Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 34068489-d851-4c4a-b6b4-301a97eaab12 · outbound

This paper cites BeyondBOLSIG+:MonteCarlosimulation of electron and ion swarms to obtain transport and rate coefficients forplasmamodeling.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials BeyondBOLSIG+:MonteCarlosimulation of electron and ion swarms to obtain transport and rate coefficients forplasmamodeling

Reference 53

Resolution: malformed identifier; doi_truncated, observed 2026-05-18T14:56:29.812484Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation eb61a9d6-095f-414f-99dc-ed370e8c8b89 · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 54

Resolution: malformed identifier; raw_fallback, observed 2026-05-18T15:02:41.591456Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation ec080306-0198-43cd-b3ee-e4e8817934ba · outbound

This paper cites Barman, G.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Barman, G

Reference 55

Resolution: malformed identifier; doi_truncated, observed 2026-05-18T14:56:29.719578Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 19a486be-cef1-4f66-9784-de0615c9baac · outbound

This paper cites Eng.283, 112106 (2024), doi:10.1016/j.mee.2023.112106.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Eng.283, 112106 (2024), doi:10.1016/j.mee.2023.112106

Reference 56

Resolution: verified exact; arxiv_id, observed 2026-05-18T14:56:29.753513Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation a263fd97-ea7e-4032-b6ce-46f81fb367fa · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 57

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.819039Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation b62c10e4-8996-4b76-931f-682c32e6eff9 · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 58

Resolution: unresolved; raw_fallback, observed 2026-05-18T15:02:41.593565Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation ee07cb80-a30e-4c88-ae93-32441ad82c96 · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 59

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.661087Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 553e93b8-74d8-4bd9-917b-dd6f1de5d5ef · outbound

This paper cites Khakbaz,et al., Two-dimensional Bi2SeO2 and its native insulators for next-generation nanoelectronics.ACS Nano19(10), 9788–9800 (2025), doi:10.1021/acsnano.4c12160.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Khakbaz,et al., Two-dimensional Bi2SeO2 and its native insulators for next-generation nanoelectronics.ACS Nano19(10), 9788–9800 (2025), doi:10.1021/acsnano.4c12160

Reference 60

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.733381Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 151aae19-9ab3-4df8-a8e6-da22c14167f4 · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 61

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.762354Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation b65269df-fb26-45f5-83a9-00d6573210a5 · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 62

Resolution: malformed identifier; raw_fallback, observed 2026-05-18T15:02:41.588661Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation fbef0b93-5f24-45c5-a322-ffdb8adc3ae5 · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 63

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.739512Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 870c1ca4-563a-417c-90e8-b4c83ca1694f · outbound

This paper cites Liu,et al., Few-layer𝛼-Sb2O3 molecular crystals as high-𝜅van der Waals dielectrics: electronic decoupling and significant surface ionic behaviors.J.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Liu,et al., Few-layer𝛼-Sb2O3 molecular crystals as high-𝜅van der Waals dielectrics: electronic decoupling and significant surface ionic behaviors.J

Reference 64

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.800656Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation fe1a8347-6885-43ec-a279-c8f2f55cfadb · outbound

This paper cites marbling.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials marbling

Reference 65

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.825227Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 18b4fa41-94f1-4a9a-9962-9d06f0d9fc8a · outbound

This paper cites Giustino, A.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Giustino, A

Reference 66

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.748694Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 9a5a7952-8961-469d-a986-04419ec8c507 · outbound

This paper cites Kumar,et al., Thickness and electric-field-dependent polarizability and dielectric constant in phosphorene.Phys.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Kumar,et al., Thickness and electric-field-dependent polarizability and dielectric constant in phosphorene.Phys

Reference 67

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.776189Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 578903c1-914d-415f-8ea8-a26a74483016 · outbound

This paper cites Impurity spectra of graphene unde r electric and magnetic ﬁelds.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Impurity spectra of graphene unde r electric and magnetic ﬁelds

Reference 68

Resolution: malformed identifier; doi_truncated, observed 2026-05-18T14:56:29.788552Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 77ee464b-5805-48e3-bae3-740b0e766c3a · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 69

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.665340Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation bb14f895-b72c-4bb3-8b45-b10f4aaa90f3 · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 70

Resolution: malformed identifier; arxiv_id, observed 2026-05-18T14:56:31.430835Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 7788ff03-4a36-4c2a-ae08-eb8dbbd495f3 · outbound

This paper cites an unresolved cited work.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Unresolved cited work

Reference 71

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.797708Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Observation 6e6e3d79-d5a5-4fc6-8ab0-b4b44994869b · outbound

This paper cites Esseni, M.

Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials Esseni, M

Reference 72

Resolution: verified exact; doi, observed 2026-05-18T14:56:29.704381Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-13T06:32:02.005865+00:00.

Coverage vector

Reference resolution

Outbound references

Pith citing papers