Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices | Paper Citation Record

Observation ecbe58e6-a3b3-4e3b-8713-d9ed8db35c41 · outbound

This paper cites Physical Review A33(5), 2913–2927 (1986).

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices Physical Review A33(5), 2913–2927 (1986)

Reference 1

Resolution: malformed identifier; doi_truncated, observed 2026-05-15T17:26:21.748727Z

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Observation c4b2a33c-b751-42ff-b719-4b9a380aad4c · outbound

This paper cites A.et al.Silicon quantum electronics.Reviews of Modern Physics 85, 961–1019 (2013).

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices A.et al.Silicon quantum electronics.Reviews of Modern Physics 85, 961–1019 (2013)

Reference 2

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.761287Z

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Observation b5629ce2-4910-4611-b75e-58bbd679c3d5 · outbound

This paper cites an unresolved cited work.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices Unresolved cited work

Reference 3

Resolution: verified fuzzy; raw_fallback, observed 2026-05-15T17:30:12.184973Z

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Observation 19c25c24-6b88-4bea-927c-96bbabaeb3ad · outbound

This paper cites URL https://doi.org/10.1038/nature15263.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL https://doi.org/10.1038/nature15263

Reference 4

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.770477Z

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Observation 3cd325ed-c736-484e-a722-49117c32ef0f · outbound

This paper cites & Loss, D.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices & Loss, D

Reference 5

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.757677Z

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Observation f4a7a980-ab0b-4274-bcfc-1d6f787a9a43 · outbound

This paper cites URL https://doi.org/10.1038/ncomms13575.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL https://doi.org/10.1038/ncomms13575

Reference 6

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.739752Z

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Observation 079344d5-653a-4526-b028-3e4420cf6a48 · outbound

This paper cites C.et al.12-spin-qubit arrays fabricated on a 300 mm semiconductor manufacturing line.Nano Letters25, 793–799 (2025).

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices C.et al.12-spin-qubit arrays fabricated on a 300 mm semiconductor manufacturing line.Nano Letters25, 793–799 (2025)

Reference 7

Resolution: verified fuzzy; raw_fallback, observed 2026-05-15T17:30:12.188069Z

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Observation 5c07526d-33f7-4c45-934b-80acfbe30015 · outbound

This paper cites CMOS compatibility of semiconductor spin qubits.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices CMOS compatibility of semiconductor spin qubits

Reference 8

Resolution: verified exact; local_arxiv, observed 2026-05-15T17:26:21.766383Z

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Observation 03d2a010-0fc6-4620-979b-f594acd06a2a · outbound

This paper cites an unresolved cited work.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices Unresolved cited work

Reference 9

Resolution: malformed identifier; raw_fallback, observed 2026-05-15T17:30:12.178773Z

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Observation 15ddb1c2-87e3-4efa-bcd1-4d9890473517 · outbound

This paper cites H.et al.Silicon qubit fidelities approaching incoherent noise limits via pulse engineering.Nature Electronics2, 151–158 (2019).

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices H.et al.Silicon qubit fidelities approaching incoherent noise limits via pulse engineering.Nature Electronics2, 151–158 (2019)

Reference 10

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.744348Z

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Observation d044680d-daef-4a75-8aa5-db336a954a93 · outbound

This paper cites URL https://doi.org/10.1038/s41565-017-0014-x.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL https://doi.org/10.1038/s41565-017-0014-x

Reference 11

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.753346Z

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Observation 62a8430d-c0ca-438c-95c6-63d6deb55f9d · outbound

This paper cites Simultaneous High-Fidelity Single-Qubit Gates in a Spin Qubit Array.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices Simultaneous High-Fidelity Single-Qubit Gates in a Spin Qubit Array

Reference 12

Resolution: verified exact; arxiv_id, observed 2026-07-16T01:22:26.174192Z

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Observation c836e98e-cfea-4031-a2d6-fa4d451146fd · outbound

This paper cites URL https://api.semanticscholar.org/ CorpusID:273502149.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL https://api.semanticscholar.org/ CorpusID:273502149

Reference 13

Resolution: verified fuzzy; raw_fallback, observed 2026-05-15T17:30:12.181661Z

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Observation a3a49ba4-c74f-496c-9398-81f5fa446a8d · outbound

This paper cites R.et al.Two-qubit silicon quantum processor with operation fidelity exceeding 99%.Science Advances8, eabn5130 (2022).

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices R.et al.Two-qubit silicon quantum processor with operation fidelity exceeding 99%.Science Advances8, eabn5130 (2022)

Reference 14

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.909978Z

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Observation f2a486d3-02e9-40fd-83a6-9562f89bfcb9 · outbound

This paper cites URL https://doi.org/10.1038/ s41586-021-04182-y.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL https://doi.org/10.1038/ s41586-021-04182-y

Reference 15

Resolution: malformed identifier; raw_fallback, observed 2026-05-15T17:30:12.151101Z

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Observation 0b44fefb-b708-4a89-bf60-33badce5803b · outbound

This paper cites H.et al.Operation of a silicon quantum processor unit cell above one kelvin.Nature580, 350–354 (2020).

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices H.et al.Operation of a silicon quantum processor unit cell above one kelvin.Nature580, 350–354 (2020)

Reference 16

Resolution: malformed identifier; raw_fallback, observed 2026-05-15T17:30:12.175706Z

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Observation 2c04b0a3-802f-409c-a589-06a3bd1beda7 · outbound

This paper cites URL https://doi.org/10.1038/s41586-020-2170-7.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL https://doi.org/10.1038/s41586-020-2170-7

Reference 17

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.869970Z

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Observation 3ffd5703-a42b-4812-bccc-b483bfe7cdac · outbound

This paper cites Y.et al.High-fidelity spin qubit operation and algorithmic initial- ization above 1 k.Nature627, 772–777 (2024).

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices Y.et al.High-fidelity spin qubit operation and algorithmic initial- ization above 1 k.Nature627, 772–777 (2024)

Reference 18

Resolution: malformed identifier; raw_fallback, observed 2026-05-15T17:30:12.170557Z

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Observation 312eec03-954a-40bf-9753-51d0ccc41f6a · outbound

This paper cites Fowler, Matteo Mariantoni, John M.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices Fowler, Matteo Mariantoni, John M

Reference 19

Resolution: metadata mismatch; doi, observed 2026-05-15T17:26:21.810595Z

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Observation cb54151d-dbfb-4050-9290-437605f89de8 · outbound

This paper cites an unresolved cited work.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices Unresolved cited work

Reference 20

Resolution: malformed identifier; raw_fallback, observed 2026-05-15T17:30:12.164169Z

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Observation 99dad0df-90e8-4d05-93f5-eeb6a52fb1b3 · outbound

This paper cites J.et al.Low-frequency charge noise inSi/SiGequantum dots.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices J.et al.Low-frequency charge noise inSi/SiGequantum dots

Reference 21

Resolution: malformed identifier; raw_fallback, observed 2026-05-15T17:30:12.124924Z

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Observation e27a0f08-a154-47f6-b67a-a20e3153ffd8 · outbound

This paper cites URL https://doi.org/10.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL https://doi.org/10

Reference 22

Resolution: verified fuzzy; raw_fallback, observed 2026-05-15T17:30:12.111982Z

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Observation e78def74-2018-4024-81ee-10bd1c06ea96 · outbound

This paper cites J.et al.Charge-noise spectroscopy ofSi/SiGequantum dots via dynamically-decoupled exchange oscillations.Nature Communications13, 940 (2022).

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices J.et al.Charge-noise spectroscopy ofSi/SiGequantum dots via dynamically-decoupled exchange oscillations.Nature Communications13, 940 (2022)

Reference 23

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.888425Z

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Observation 32649440-f750-4815-a1f5-9b16d2d800a1 · outbound

This paper cites URL https: //doi.org/10.1038/s41467-023-36951-w.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL https: //doi.org/10.1038/s41467-023-36951-w

Reference 24

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.830399Z

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correction dated 2023-04-06. Source: crossref record 10.1038/s41467-023-37548-z->10.1038/s41467-023-36951-w:correction, observed 2026-07-11T03:02:46.385894+00:00. This notice travels one citation hop only.

Observation 1cf5ce4b-f58b-49f6-93b9-ce45583088c1 · outbound

This paper cites C.et al.Passivation and characterization of charge defects in ambipolar silicon quantum dots.Scientific Reports6, 38127 (2016).

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices C.et al.Passivation and characterization of charge defects in ambipolar silicon quantum dots.Scientific Reports6, 38127 (2016)

Reference 25

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.815110Z

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Observation cc618869-579d-4386-88d4-0c534d12f5c6 · outbound

This paper cites URL https://doi.org/10.1063/1.3194778.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL https://doi.org/10.1063/1.3194778

Reference 26

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.850983Z

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Observation 45b2c66c-8a4d-45a4-8921-3e1f4829078e · outbound

This paper cites URL https: //doi.org/10.1063/5.0151029.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL https: //doi.org/10.1063/5.0151029

Reference 27

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.896813Z

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Observation a1b911b2-2c7e-4f21-af7b-08d4c3095de8 · outbound

This paper cites an unresolved cited work.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices Unresolved cited work

Reference 28

Resolution: verified fuzzy; raw_fallback, observed 2026-05-15T17:30:12.141727Z

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Observation 7afd9d0f-a54d-42e7-aece-94ad40bf88bc · outbound

This paper cites & Horn, P.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices & Horn, P

Reference 29

Resolution: malformed identifier; raw_fallback, observed 2026-05-15T17:30:12.138574Z

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Observation 44997127-0a1e-4266-9a81-13e4e5a978aa · outbound

This paper cites URL https://link.aps.org/doi/10.1103/ PhysRevApplied.12.014013.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL https://link.aps.org/doi/10.1103/ PhysRevApplied.12.014013

Reference 30

Resolution: malformed identifier; raw_fallback, observed 2026-05-15T17:30:12.109304Z

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Observation fc9995e3-6cd6-4a3c-afaa-7c5e9da97b0e · outbound

This paper cites N.et al.High mobility simosfets fabricated in a full 300 mm CMOSprocess.Materials for Quantum Technology1, 041001 (2021).

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices N.et al.High mobility simosfets fabricated in a full 300 mm CMOSprocess.Materials for Quantum Technology1, 041001 (2021)

Reference 31

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.847345Z

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Observation a0d9a5e1-8b6e-4092-9d3f-e2af1f5ae5d9 · outbound

This paper cites P.et al.Holes in silicon are heavier than expected: Transport prop- erties of extremely high mobility electrons and holes in silicon mosfets.Physical Review B– (2025).

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices P.et al.Holes in silicon are heavier than expected: Transport prop- erties of extremely high mobility electrons and holes in silicon mosfets.Physical Review B– (2025)

Reference 32

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.796950Z

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Observation b28be378-57ce-463f-b3ca-6cdc33f44cab · outbound

This paper cites J.et al.Gate-defined quantum dots in intrinsic silicon.Nano Letters 7, 2051–2055 (2007).

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices J.et al.Gate-defined quantum dots in intrinsic silicon.Nano Letters 7, 2051–2055 (2007)

Reference 33

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.792530Z

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Observation b5fece1a-ded5-4254-b5b3-08fa3a35243f · outbound

This paper cites H.et al.Electrostatically defined few-electron double quantum dot in silicon.Applied Physics Letters94, 173502 (2009).

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices H.et al.Electrostatically defined few-electron double quantum dot in silicon.Applied Physics Letters94, 173502 (2009)

Reference 34

Resolution: malformed identifier; raw_fallback, observed 2026-05-15T17:30:12.154684Z

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Observation 7a884eb1-3ed2-4227-bd08-d6ac861f7418 · outbound

This paper cites an unresolved cited work.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices Unresolved cited work

Reference 35

Resolution: verified exact; arxiv_id, observed 2026-05-15T17:26:22.300351Z

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Observation 33485e0e-35b8-487e-bd95-b2a85b89e826 · outbound

This paper cites & Zimmerman, N.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices & Zimmerman, N

Reference 36

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.774559Z

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Observation e7f8ae48-d8a5-4a72-b1cd-84ec4926c7ef · outbound

This paper cites URL https://doi.org/10.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL https://doi.org/10

Reference 37

Resolution: verified fuzzy; raw_fallback, observed 2026-05-15T17:30:12.130846Z

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Observation 7490eceb-6978-4074-bccd-33301cfb0d32 · outbound

This paper cites C.et al.A fabrication guide for planar silicon quantum dot heterostructures.Nanotechnology29, 143001 (2018).

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices C.et al.A fabrication guide for planar silicon quantum dot heterostructures.Nanotechnology29, 143001 (2018)

Reference 38

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.826503Z

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Observation fbe14412-35fe-4f80-99c9-43386e646979 · outbound

This paper cites URL https://doi.org/10.1038/s41598-018-24004-y.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL https://doi.org/10.1038/s41598-018-24004-y

Reference 39

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.801184Z

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Observation 2c648a1a-b109-4267-a4cb-c6641eeab33a · outbound

This paper cites an unresolved cited work.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices Unresolved cited work

Reference 40

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.835257Z

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Observation db5e73b4-9103-44b0-84de-d5b586b97322 · outbound

This paper cites an unresolved cited work.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices Unresolved cited work

Reference 41

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.900586Z

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No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation 6b66d882-b812-4fc4-942b-501a0778c11c · outbound

This paper cites URL https://doi.org/10.1063/1.3497014.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL https://doi.org/10.1063/1.3497014

Reference 42

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.818815Z

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No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation 9bb4fdd3-b129-42db-84a7-f5ef48d3b00c · outbound

This paper cites URL https://doi.org/10.1186/ s11671-015-0883-6.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL https://doi.org/10.1186/ s11671-015-0883-6

Reference 44

Resolution: malformed identifier; raw_fallback, observed 2026-05-15T17:30:12.127907Z

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Observation c126b0fb-54ad-42ab-85ea-9324da089604 · outbound

This paper cites an unresolved cited work.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices Unresolved cited work

Reference 45

Resolution: verified fuzzy; raw_fallback, observed 2026-05-15T17:30:12.114881Z

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Observation 4b3dc307-2b10-4109-8667-9cc312add105 · outbound

This paper cites L.et al.Successive reactions of gaseous trimethylaluminium and ammonia on porous alumina.Physical Chemistry Chemical Physics3, 1093–1102 (2001).

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices L.et al.Successive reactions of gaseous trimethylaluminium and ammonia on porous alumina.Physical Chemistry Chemical Physics3, 1093–1102 (2001)

Reference 46

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.842868Z

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Observation c66edf59-5af5-452e-8282-e84e06aca19c · outbound

This paper cites URL https://doi.org/10.1063/1.4922267.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL https://doi.org/10.1063/1.4922267

Reference 47

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.866221Z

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No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation 1c6a15b7-e2d1-43b1-8b07-7e51a76969b1 · outbound

This paper cites URL https://doi.org/10.1038/s41598-022-09054-7.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL https://doi.org/10.1038/s41598-022-09054-7

Reference 48

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.917340Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation 926c3859-9cad-4b0e-8651-a5e97ed1a7f4 · outbound

This paper cites M.et al.Characterization of electrical traps formed inAl2O3 under variousALDconditions.Materials13(2020).

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices M.et al.Characterization of electrical traps formed inAl2O3 under variousALDconditions.Materials13(2020)

Reference 49

Resolution: verified fuzzy; raw_fallback, observed 2026-05-15T17:30:12.134418Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation 23d1ff2e-f38b-4502-a787-656ccb882df1 · outbound

This paper cites URL https://dx.doi.org/10.7567/JJAP.55.04EB03.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL https://dx.doi.org/10.7567/JJAP.55.04EB03

Reference 50

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.858785Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation 90751ce8-39c1-4eb8-8f14-689836498e0b · outbound

This paper cites URL https://www.sciencedirect.com/science/article/pii/ S2468023023011288.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL https://www.sciencedirect.com/science/article/pii/ S2468023023011288

Reference 51

Resolution: verified fuzzy; raw_fallback, observed 2026-05-15T17:30:12.144879Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation 67204cd8-2a3c-4d99-9d1c-12b4e004a4e2 · outbound

This paper cites an unresolved cited work.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices Unresolved cited work

Reference 52

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.862509Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation bb336967-da20-48dd-b9cd-a276da3a67b2 · outbound

This paper cites URL https://doi.org/ 10.35848/1882-0786/acdc82.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL https://doi.org/ 10.35848/1882-0786/acdc82

Reference 53

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.838971Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation d86eb40c-ef45-44f9-abb5-fb0092626926 · outbound

This paper cites L.et al.Negative oxygen vacancies inHfO2 as charge traps in high- κstacks.Applied Physics Letters89, 082908 (2006).

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices L.et al.Negative oxygen vacancies inHfO2 as charge traps in high- κstacks.Applied Physics Letters89, 082908 (2006)

Reference 54

Resolution: verified fuzzy; raw_fallback, observed 2026-05-15T17:30:12.148028Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation b7822430-7da4-4d9b-b617-dc2a2377917c · outbound

This paper cites URL http://dx.doi.org/10.1039/C4CP04957H.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL http://dx.doi.org/10.1039/C4CP04957H

Reference 55

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.778605Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation 7f210cef-2aac-493a-b041-b14cdcd07fe6 · outbound

This paper cites an unresolved cited work.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices Unresolved cited work

Reference 56

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.783631Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation 364b1992-178e-4f95-add8-10886d959fd4 · outbound

This paper cites an unresolved cited work.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices Unresolved cited work

Reference 57

Resolution: malformed identifier; raw_fallback, observed 2026-05-15T17:30:12.173160Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation 0609d843-65cf-4c92-8289-8c2ce61e332a · outbound

This paper cites M.et al.Alternatives to aluminum gates for silicon quantum devices: Defects and strain.Journal of Applied Physics130, 115102 (2021).

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices M.et al.Alternatives to aluminum gates for silicon quantum devices: Defects and strain.Journal of Applied Physics130, 115102 (2021)

Reference 58

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.873850Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation bfc963b9-c04b-4e6a-89e7-82c09d9f3ced · outbound

This paper cites A.et al.Observation of percolation-induced two-dimensional metal- insulator transition in aSi MOSFET.Physical Review B79, 235307 (2009).

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices A.et al.Observation of percolation-induced two-dimensional metal- insulator transition in aSi MOSFET.Physical Review B79, 235307 (2009)

Reference 59

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.892375Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation 76681d2a-a019-4b3d-9ace-b6db2d6af1dc · outbound

This paper cites URL https://doi.org/10.1063/1.4979035.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL https://doi.org/10.1063/1.4979035

Reference 60

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.904973Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation 881abcbf-2421-4d96-9ca6-62f7114282e1 · outbound

This paper cites an unresolved cited work.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices Unresolved cited work

Reference 61

Resolution: verified fuzzy; raw_fallback, observed 2026-05-15T17:30:12.157737Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation 60284c49-88b9-4d91-9edf-f0a2a6030c79 · outbound

This paper cites URL https://www.sciencedirect.com/science/ article/pii/S003960289800020X.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL https://www.sciencedirect.com/science/ article/pii/S003960289800020X

Reference 62

Resolution: verified fuzzy; raw_fallback, observed 2026-05-15T17:30:12.167301Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation f3b9fe9b-7976-4006-ae5b-9a9086d8a245 · outbound

This paper cites URL https://doi.org/10.1063/1.1953866.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL https://doi.org/10.1063/1.1953866

Reference 63

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.788061Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation 3719b351-72dc-4a9e-b433-1b91c4a57dc0 · outbound

This paper cites Hydrogen sensitive mos-structures: Part 1: Principles and applica- tions.Sensors and Actuators1, 403–426 (1981).

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices Hydrogen sensitive mos-structures: Part 1: Principles and applica- tions.Sensors and Actuators1, 403–426 (1981)

Reference 64

Resolution: verified exact; arxiv_id, observed 2026-05-15T17:26:22.294481Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation b9a8a781-d1d2-4568-8634-819114464279 · outbound

This paper cites an unresolved cited work.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices Unresolved cited work

Reference 66

Resolution: verified exact; arxiv_id, observed 2026-05-15T17:26:22.306333Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation c737fe05-3408-4def-b5f3-c488ba0f590e · outbound

This paper cites H.et al.Temperature and interface-roughness dependence of the electron mobility in high-mobilitySi(100)inversion layers below 4.2 k.Phys- ical Review B43, 6642–6649 (1991).

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices H.et al.Temperature and interface-roughness dependence of the electron mobility in high-mobilitySi(100)inversion layers below 4.2 k.Phys- ical Review B43, 6642–6649 (1991)

Reference 67

Resolution: malformed identifier; raw_fallback, observed 2026-05-15T17:30:12.161422Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation 38f4f77a-111f-41ed-b641-442b220925fe · outbound

This paper cites & Dolgopolov, V.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices & Dolgopolov, V

Reference 68

Resolution: malformed identifier; raw_fallback, observed 2026-05-15T17:30:12.118736Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation 7c39a209-6817-45ad-8499-59fd2753c497 · outbound

This paper cites E.et al.Charge noise spectroscopy using coherent exchange oscillations in a singlet-triplet qubit.Physical Review Letters110, 146804 (2013).

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices E.et al.Charge noise spectroscopy using coherent exchange oscillations in a singlet-triplet qubit.Physical Review Letters110, 146804 (2013)

Reference 69

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.805677Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation 95aa6ce7-7c60-4996-92f2-766f1d80a461 · outbound

This paper cites URL https://link.aps.org/doi/10.1103/ PhysRevApplied.14.024066.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL https://link.aps.org/doi/10.1103/ PhysRevApplied.14.024066

Reference 70

Resolution: malformed identifier; raw_fallback, observed 2026-05-15T17:30:12.122002Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation ef586542-1e8c-4c2f-91e7-139cdba59daf · outbound

This paper cites Scalable quantum current source on commercial CMOS process technology.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices Scalable quantum current source on commercial CMOS process technology

Reference 71

Resolution: verified exact; arxiv_id, observed 2026-05-15T17:26:22.311698Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation 0fde7a4d-7e26-4644-b653-849e0ac647fe · outbound

This paper cites The Journal of Chemical Physics 132(21), 214102 (2010).

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices The Journal of Chemical Physics 132(21), 214102 (2010)

Reference 72

Resolution: malformed identifier; doi_truncated, observed 2026-05-15T17:26:21.823201Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation 9c9be255-14af-44fc-bde6-40c4ffcc78e4 · outbound

This paper cites URL https://dx.doi.org/10.1088/1367-2630/12/11/113033.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL https://dx.doi.org/10.1088/1367-2630/12/11/113033

Reference 73

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.877518Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation fa90b27a-39dd-419d-87ad-c2ac1d464e87 · outbound

This paper cites resistance overshoot.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices resistance overshoot

Reference 74

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.913651Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation 96b2095b-b04b-43c5-b272-9d1a2c2297bc · outbound

This paper cites URL https://onlinelibrary.wiley.com/doi/abs/10.1002/pssc.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL https://onlinelibrary.wiley.com/doi/abs/10.1002/pssc

Reference 75

Resolution: malformed identifier; doi_truncated, observed 2026-05-15T17:26:21.883166Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Observation 03e46ab0-b68f-4800-b9ec-a12d950e80cd · outbound

This paper cites URL https://link.aps.org/doi/10.1103/PhysRevB.92.035304.

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices URL https://link.aps.org/doi/10.1103/PhysRevB.92.035304

Reference 76

Resolution: verified exact; doi, observed 2026-05-15T17:26:21.854607Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-07-20T06:30:07.809122+00:00.

Coverage vector

Reference resolution

Outbound references

Pith citing papers